EC103x
EC103x
Description
Schematic Symbol
A K
Value
Symbol Test Conditions SxS / Unit
SxS1 SxS2 SxS3
2N6565
EC103X1 EC103X2 EC103X3
EC103X
IGT MAX. 12 50 200 500 µA
VD = 6V; RL = 100 Ω
VGT MAX. 0.8 V
400V 20 25 30 40
dv/dt VD = VDRM; RGK = 1kΩ MIN. V/μs
600V 10 10 15 20
VGD VD = VDRM; RL = 3.3 kΩ; TJ = 110°C MIN. 0.2 0.25 V
IH IT = 20mA (initial), RGK = 1kΩ MAX. 5 8 mA
tq (1) MAX. 60 50 45 μs
tgt IG = 2 x IGT; PW = 15µs; IT = 1.6A TYP. 2 5 20 30 μs
(1) IT=1A; tp=50µs; dv/dt=5V/µs; di/dt=-5A/µs
Static Characteristics
TJ = 25°C 1
VDRM = VRRM
IDRM / IRRM TJ = 100°C MAX. 50 μA
RGK = 1kΩ
TJ = 110°C 100
Thermal Resistances
4.0 2.0
3.0 1.5
2.0 1.0
1.0 0.5
0.0 0.0
-40 -15 10 35 60 85 110 -40 -15 10 35 60 85 110
3.0 10
Instantaneous On-state Current (iT) – Amps TJ = 25°C
2.5
8
Ratio of IH / IH (TJ = 25°C)
2.0
6
1.5
4
1.0
2
0.5
0.0 0
-40 -15 10 35 60 85 110 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Junction Temperature (TJ) -- (°C) Instantaneous On-state Voltage (vT) – Volts
0.7 115
Maximum Allowable Case Temperature
Average On-State Power Dissipation
0.6
105
0.5
[PD(AV)] - (Watts)
95
0.4
(TC) - °C
0.3
85
0.2
75
CURRENT WAVEFORM: Sinusoidal
0.1
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
0.0 65
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS On-State Current [IT(RMS)] - Amps RMS On-State Current [IT(RMS)] - Amps
Figure 7: Maximum Allowable Case Temperature Figure 8: Maximum Allowable Ambient Temperature
vs. Average On-State Current vs. RMS On-State Current
115 120
CURRENT WAVEFORM: Sinusoidal
80
95
(TC) - °C
(TA) - °C
60
85
40
75 20
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
0
65
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Average On-State Current [IT(AVE)] - Amps RMS On-State Current [IT(RMS)] - Amps
120 180
Maximum Allowable Ambient Temperature
80 120
12 Hz
(TA) - °C
100
60
80 60 Hz
40
60
ITRM
40
20
20
tW
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
1 10 100
Average On-State Current [IT(AVE)] - Amps Pulse Current Duration (tW) - μs
180
160
Peak Discharge Current (ITM) - Amps
140
120
1 Hz
100
80
12 Hz
60
ITM
40
60 Hz
20
tW
0
1 10 100
Pulse Current Duration (tW) - μs
100.0
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS On-State Current: [IT(RMS)]: Maximum Rated
Value at Specified Case Temperature
On-state Current (ITSM) – Amps
Peak Surge (Non-repetitive)
10.0 Notes:
1. G
ate control may be lost during and immediately
following surge current interval.
2. O
verload may not be repeated until junction
temperature has returned to steady-state
rated value.
1.0
0.1
1 10 100 1000
Surge Current Duration -- Full Cycles
Figure 13: Simple Test Circuit for Gate Trigger Voltage and Current
Reset Note: V
1 — 0 V to 10 V dc meter
Normally-closed VGT — 0 V to 1 V dc meter
Pushbutton
IG — 0 mA to 1 mA dc milliammeter
R1 — 1 k potentiometer
100 To measure gate trigger voltage and current, raise gate
voltage (VGT) until meter reading V1 drops from 6 V to 1 V.
+ Gate trigger voltage is the reading on VGT just prior to V1
D.U.T.
6VDC IGT IN4001 dropping. Gate trigger current IGT Can be computed from
– the relationship
IG R1
V1 100
1k
VGT VGT
(1%)
IGT = IG- ____ Amps
1000
where IG is reading (in amperes) on meter just prior to V1
dropping
Note: IGT may turn out to be a negative quantity (trigger
current flows out from gate lead). If negative current
occurs, IGT value is not a valid reading. Remove 1 k resistor
and use IG as the more correct IGT value. This will occur on
12 µA gate products.
Soldering Parameters
Temperature
Pre Heat - Temperature Max (Ts(max)) 200°C TL
tL
TS(max)
- Time (min to max) (ts) 60 – 180 secs
Ramp-do
Ramp-down
Average ramp up rate (Liquidus Temp) Preheat
5°C/second max
(TL) to peak TS(min)
tS
TS(max) to TL - Ramp-up Rate 5°C/second max
- Temperature (TL) (Liquidus) 217°C
Reflow 25
- Temperature (tL) 60 – 150 seconds time to peak temperature
Time
Peak Temperature (TP) 260+0/-5 °C
Time within 5°C of actual peak
20 – 40 seconds
Temperature (tp)
Ramp-down Rate 5°C/second max
Time 25°C to peak Temperature (TP) 8 minutes Max.
Do not exceed 280°C
TC Measuring Point
Inches Millimeters
Dimension
Min Max Min Max
A
A 0.176 0.196 4.47 4.98
B 0.500 - 12.70 -
D 0.095 0.105 2.41 2.67
E 0.150 - 3.81 -
Anode
Cathode
D 0.159 0.181 4.05 4.60
E 0.030 0.063 0.75 1.60
H F
L
F 0.075 0.096 1.90 2.45
E J
K
G 0.002 0.008 0.05 0.20
G
Pad Outline
(and millimeters).
N 0.027 0.033 0.69 0.84
P 0.052 0.058 1.32 1.47
Product Selector
Voltage
Part Number Gate Sensitivity Type Package
400V 600V 800V 1000V
EC103 x 1 X X 12μA Sensitive SCR TO-92
EC103 x 2 X X 50μA Sensitive SCR TO-92
EC103 x X / 2N6565 X 200μA Sensitive SCR TO-92
EC103 x 3 X X 500μA Sensitive SCR TO-92
S x S1 X X 12μA Sensitive SCR Compak
S x S2 X X 50μA Sensitive SCR Compak
SxS X X 200μA Sensitive SCR Compak
S x S3 X X 500μA Sensitive SCR Compak
Note: x = Voltage
Packing Options
0.708
(18.0) 0.354
(9.0)
0.5 Cathode Anode
(12.7) 0.1 (2.54)
0.2 (5.08) Gate
14.17(360.0) 0.157 DIA
(4.0)
Flat up
1.97
(50.0)
Dimensions
are in inches
Direction of Feed (and millimeters).
1.85
(47.0)
12.2
(310.0)
Dimensions
are in inches
1.85 (and millimeters).
(47.0)
13.3
(338.0)
0.157 Anode
(4.0)
0.47
(12.0) 0.36
(9.2)
8.0
Gate 0.059 DIA Cover tape
0.315 Cathode
(8.0) (1.5)
12.99
0.512 (13.0) Arbor (330.0)
Hole Dia. Dimensions
are in inches
(and millimeters).
0.49
(12.4)
Direction of Feed
DEVICE TYPE
EC103D1
EC: TO-92 SCR Lead Form Dimensions
2N: JEDEC xx: Lead Form Option YMLXX
®
CURRENT RATING
103: 0.8A (TO-92)
S 6 S 1 Compak (C Package)
DEVICE TYPE SENSITIVITY & TYPE S6S1
S: Compak SCR 1: 12 µ A
2: 50 µ A
[blank]: 200 µ A ®
YMXXX
VOLTAGE RATING
4: 400V 3: 500 µ A
6: 600V
CURRENT RATING
S: 0.8A (Compak)