BTS711L1

Smart Four Channel Highside Power Switch

Product Summary
Features Overvoltage Protection Vbb(AZ) 43 V
• Overload protection
• Current limitation
Operating voltage Vbb(on) 5.0 ... 34 V
• Short-circuit protection active channels: one two parallel four parallel
• Thermal shutdown On-state resistance RON 200 100 50 mΩ
• Overvoltage protection Nominal load current IL(NOM) 1.9 2.8 4.4 A
(including load dump) Current limitation IL(SCr) 4 4 4 A
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
P-DSO-20
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection

Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.

Pin Definitions and Functions

Pin configuration (top view)
Pin Symbol Function
1,10, Vbb Positive power supply voltage. Design the
11,12, wiring for the simultaneous max. short circuit Vbb 1 • 20 Vbb
15,16, currents from channel 1 to 4 and also for low GND1/2 2 19 Vbb
19,20 thermal resistance IN1 3 18 OUT1
3 IN1 Input 1 .. 4, activates channel 1 .. 4 in case of ST1/2 4 17 OUT2
5 IN2 logic high signal
IN2 5 16 Vbb
7 IN3
GND3/4 6 15 Vbb
9 IN4
IN3 7 14 OUT3
18 OUT1 Output 1 .. 4, protected high-side power output
ST3/4 8 13 OUT4
17 OUT2 of channel 1 .. 4. Design the wiring for the
IN4 9 12 Vbb
14 OUT3 max. short circuit current
Vbb 10 11 Vbb
13 OUT4
4 ST1/2 Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
8 ST3/4 Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
2 GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)
6 GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group 1 2003-Oct-01
 BTS711L1

Block diagram
Four Channels; Open Load detection in on state;

+ V bb
Current
Leadframe
Voltage Overvoltage Gate 1
source protection limit 1 protection Channel 1

V Logic

Limit for OUT1 18

Voltage Level shifter
unclamped
sensor Rectifier 1 Temperature
ind. loads 1
sensor 1
3 IN1
Charge Open load
5 IN2 pump 1 Short to Vbb
ESD Logic
4 ST1/2
detection 1
Charge Current Gate 2
pump 2 limit 2 protection Channel 2

Level shifter OUT2 17

Limit for
Rectifier 2 unclamped Load
2 GND1/2
Temperature
ind. loads 2
sensor 2
Open load R R
O1 O2
Signal GND Short to Vbb
GND1/2
detection 2
Chip 1 Chip 1 Load GND

+ V bb
Leadframe
Channel 3

OUT3 14
Logic and protection circuit of chip 2

(equivalent to chip 1)
7 IN3

9 IN4

8 ST3/4

Channel 4

OUT4 13
Load
6 GND3/4


PROFET R
O3
R
O4
Signal GND GND3/4
Chip 2 Chip 2 Load GND

Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20

Semiconductor Group 2 2003-Oct-01

 BTS711L1

Maximum Ratings at Tj = 25°C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection Vbb 34 V
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 5) IL self-limited A
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad 60 V
RI3) = 2 Ω, td = 200 ms; IN = low or high, dump
4)
each channel loaded with RL = 7.1 Ω,
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC)5 Ta = 25°C: Ptot 3.6 W
(all channels active) Ta = 85°C: 1.9
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C5),
IL = 1.9 A, ZL = 66 mH, 0 Ω one channel: EAS 150 mJ
IL = 2.8 A, ZL = 66 mH, 0 Ω two parallel channels: 320
IL = 4.4 A, ZL = 66 mH, 0 Ω four parallel channels: 800
see diagrams on page 9 and page 10
Electrostatic discharge capability (ESD) VESD 1.0 kV
(Human Body Model)
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC) IIN ±2.0 mA
Current through status pin (DC) IST ±5.0
see internal circuit diagram page 8

Thermal resistance
junction - soldering point5),6) each channel: Rthjs 16 K/W
junction - ambient5) one channel active: Rthja 44
all channels active: 35

2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
6) Soldering point: upper side of solder edge of device pin 15. See page 15
Semiconductor Group 3 2003-Oct-01
 BTS711L1
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT)
IL = 1.8 A each channel, Tj = 25°C: RON -- 165 200 mΩ
Tj = 150°C: 320 400

two parallel channels, Tj = 25°C: 83 100

four parallel channels, Tj = 25°C: 42 50
Nominal load current one channel active: IL(NOM) 1.7 1.9 -- A
two parallel channels active: 2.6 2.8
four parallel channels active: 4.1 4.4
Device on PCB5), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled IL(GNDhigh) -- -- 10 mA
up; Vbb = 30 V, VIN = 0, see diagram page 9
Turn-on time to 90% VOUT: ton 80 200 400 µs
Turn-off time to 10% VOUT: toff 80 200 400
RL = 12 Ω, Tj =-40...+150°C
Slew rate on dV/dton 0.1 -- 1 V/µs
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C:
Slew rate off -dV/dtoff 0.1 -- 1 V/µs
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C:

Operating Parameters
Operating voltage7) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V
Undervoltage restart Tj =-40...+25°C: Vbb(u rst) -- -- 5.0 V
Tj =+150°C: 7.0
Undervoltage restart of charge pump Vbb(ucp) -- 5.6 7.0 V
see diagram page 14 Tj =-40...+150°C:
Undervoltage hysteresis ∆Vbb(under) -- 0.2 -- V
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 34 -- 43 V
Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 33 -- -- V
Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.5 -- V
Overvoltage protection8) Tj =-40...+150°C: Vbb(AZ) 42 47 -- V
I bb = 40 mA

7) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
8) see also VON(CL) in circuit diagram on page 8.
Semiconductor Group 4 2003-Oct-01
 BTS711L1
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Standby current, all channels off Tj =25°C: Ibb(off) -- 28 60 µA

VIN = 0 Tj =150°C: -- 44 70
Leakage output current (included in Ibb(off)) IL(off) -- -- 12 µA
VIN = 0
Operating current 9), VIN = 5V, Tj =-40...+150°C
IGND = IGND1/2 + IGND3/4, one channel on: IGND -- 2 3 mA
four channels on: -- 8 12
Protection Functions10)
Initial peak short circuit current limit, (see timing
diagrams, page 12)
each channel, Tj =-40°C: IL(SCp) 5.5 9.5 13 A
Tj =25°C: 4.5 7.5 11
Tj =+150°C: 2.5 4.5 7
two parallel channels twice the current of one channel
four parallel channels four times the current of one channel
Repetitive short circuit current limit,
Tj = Tjt each channel IL(SCr) -- 4 -- A
two parallel channels -- 4 --
four parallel channels -- 4 --
(see timing diagrams, page 12)
Initial short circuit shutdown time Tj,start =-40°C: toff(SC) -- 5.5 -- ms
Tj,start = 25°C: -- 4 --
(see page 11 and timing diagrams on page 12)
Output clamp (inductive load switch off)11) VON(CL) -- 47 -- V
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- K
Reverse Battery
Reverse battery voltage 12) -Vbb -- -- 32 V
Drain-source diode voltage (Vout > Vbb) -VON -- 610 -- mV
IL = - 1.9 A, Tj = +150°C

9) Add IST, if IST > 0

10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
Semiconductor Group 5 2003-Oct-01
 BTS711L1
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Diagnostic Characteristics
Open load detection current, (on-condition)
each channel, Tj = -40°C: I L (OL) 101
-- 200 mA
Tj = 25°C: 10 -- 150
Tj = 150°C: 10 -- 150
two parallel channels twice the current of one channel
four parallel channels four times the current of one channel
Open load detection voltage 13 ) Tj =-40..+150°C: VOUT(OL) 2 3 4 V
Internal output pull down
(OUT to GND), VOUT = 5 V Tj =-40..+150°C: RO 4 10 30 kΩ

Input and Status Feedback14)

Input resistance RI 2.5 3.5 6 kΩ
(see circuit page 8) Tj =-40..+150°C:
Input turn-on threshold voltage VIN(T+) 1.7 -- 3.5 V
Tj =-40..+150°C:
Input turn-off threshold voltage VIN(T-) 1.5 -- -- V
Tj =-40..+150°C:
Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V
Off state input current VIN = 0.4 V: IIN(off) 1 -- 50 µA
Tj =-40..+150°C:
On state input current VIN = 5 V: IIN(on) 20 50 90 µA
Tj =-40..+150°C:
Delay time for status with open load after switch td(ST OL4) 100 320 800 µs
off (other channel in off state)
(see timing diagrams, page 13), Tj =-40..+150°C:
Delay time for status with open load after switch td(ST OL5) -- 5 20 µs
off (other channel in on state)
(see timing diagrams, page 13), Tj =-40..+150°C:
Status invalid after positive input slope td(ST) -- 200 600 µs
(open load) Tj =-40..+150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) -- -- 0.4
Tj = +150°C, IST = +1.6 mA: -- -- 0.6

13) External pull up resistor required for open load detection in off state.
14) If ground resistors RGND are used, add the voltage drop across these resistors.
Semiconductor Group 6 2003-Oct-01
 BTS711L1
Truth Table
Channel 1 and 2 Chip 1 IN1 IN2 OUT1 OUT2 ST1/2 ST1/2
Channel 3 and 4 Chip 2 IN3 IN4 OUT3 OUT4 ST3/4 ST3/4
(equivalent to channel 1 and 2)
BTS 711L1 BTS 712N1
Normal operation L L L L H H
L H L H H H
H L H L H H
H H H H H H
Open load Channel 1 (3) L L Z L H(L15)) L
L H Z H H H
H X H X L H
Channel 2 (4) L L L Z H(L15)) L
H L H Z H H
X H X H L H
Short circuit to Vbb Channel 1 (3) L L H L L16) L16)
L H H H H H
H X H X H
H(L17))
Channel 2 (4) L L L H L16) L16)
H L H H H H
X H X H H(L17)) H
Overtemperature both channel L L L L H H
X H L L L L
H X L L L L
Channel 1 (3) L X L X H H
H X L X L L
Channel 2 (4) X L X L H H
X H X L L L
Undervoltage/ Overvoltage X X L L H H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams

Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms

Ibb
V V
V Leadframe ON1 Leadframe ON3
bb V V
I IN1 ON2 I IN3 ON4
Vbb Vbb
3 I L1 7 I L3
IN1 18 IN3 14
I IN2 OUT1 I IN4 OUT3
5 9
IN2 PROFET IN4 PROFET
Chip 1 I L2 Chip 2 I L4
I ST1/2 17 I ST3/4 13
OUT2 OUT4
4 8
V ST1/2 GND1/2 V ST3/4 GND3/4
IN1 VIN2 VST1/2 V IN3 VIN4 VST3/4 V
OUT1 OUT3
2 6
I VOUT2 I VOUT4
GND1/2 GND3/4
R R
GND1/2 GND3/4

Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20

External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 Ω or a single resistor RGND = 75 Ω for
reverse battery protection up to the max. operating voltage.

15) With additional external pull up resistor

16) An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
17) Low resistance to V may be detected by no-load-detection
bb
Semiconductor Group 7 2003-Oct-01
 BTS711L1
Overvoltage protection of logic part
Input circuit (ESD protection), IN1...4 GND1/2 or GND3/4
+ V bb
R
I
IN
V
RI Z2
IN
ESD-ZD I IN
I
I Logic
ST
GND R ST

V
Z1
ESD zener diodes are not to be used as voltage clamp at
GND
DC conditions. Operation in this mode may result in a
drift of the zener voltage (increase of up to 1 V). R GND

Signal GND

Status output, ST1/2 or ST3/4 VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.,
RGND = 150 Ω
+5V

R ST(ON)
ST
Reverse battery protection
± 5V - Vbb

ESD- R ST Logic
ZD RI
GND
IN
ST OUT
ESD-Zener diode: 6.1 V typ., max 5.0 mA; Power
RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to Inverse
be used as voltage clamp at DC conditions. Operation in Diode

this mode may result in a drift of the zener voltage

(increase of up to 1 V). GND

RGND RL

Signal GND Power GND

Inductive and overvoltage output
clamp, OUT1...4 RGND = 150 Ω, RI = 3.5 kΩ typ,
Temperature protection is not active during inverse
+Vbb current operation.
VZ

V ON

OUT

PROFET

Power GND

VON clamped to VON(CL) = 47 V typ.

.

Semiconductor Group 8 2003-Oct-01

 BTS711L1

Open-load detection, OUT1...4 GND disconnect with GND pull up

ON-state diagnostic condition:
(channel 1/2 or 3/4)
VON < RON·IL(OL); IN high

+ V bb
Vbb
IN1
V OUT1
IN1
IN2 PROFET
V OUT2
VON IN2
ON ST GND

OUT

Logic Open load

V V
detection V ST GND
unit bb

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
OFF-state diagnostic condition:
VOUT > 3 V typ.; IN low Vbb disconnect with energized inductive
load

R
EXT
Vbb
IN1
OFF high OUT1
IN2 PROFET
V
OUT OUT2
ST GND
Logic Open load
R
detection O
unit

V
bb
Signal GND

For an inductive load current up to the limit defined by EAS

(max. ratings see page 3 and diagram on page 10) each
GND disconnect switch is protected against loss of Vbb.

(channel 1/2 or 3/4) Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load the whole load
current flows through the GND connection.
Ibb
V
bb
Vbb
IN1
OUT1
IN2 PROFET
OUT2
ST GND

V V V V
IN1 IN2 ST GND

Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).

Due to VGND > 0, no VST = low signal available.

Semiconductor Group 9 2003-Oct-01

 BTS711L1
Inductive load switch-off energy
Typ. on-state resistance
dissipation RON = f (Vbb,Tj ); IL = 1.8 A, IN = high
E bb

E AS RON [mOhm]
500
ELoad
Vbb
IN 450

PROFET OUT
400
= L
ST

{
EL
GND 350 Tj = 150°C
ZL

ER 300
R
L
250 85°C
Energy stored in load inductance:
200
2 25°C
EL = 1/2·L·I L
150
While demagnetizing load inductance, the energy -40°C
dissipated in PROFET is
100
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
50
with an approximate solution for RL > 0 Ω:
IL· L IL·RL 0
EAS= (V + |VOUT(CL)|)
2·RL bb
ln (1+ |V ) 0 10 20 30 40
OUT(CL)|
Vbb [V]

Maximum allowable load inductance for Typ. open load detection current
a single switch off (one channel)5) IL(OL) = f (Vbb,Tj ); IN = high
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
IL(OL) [mA]
L [mH] 140
1000
-40°C
120

100 25°C
no load detection not specified

100 85°C
80
for V bb < 6 V

60 Tj = 150°C

10 40

20

0
1 0 5 10 15 20 25 30
1 1.5 2 2.5 3 Vbb [V]
IL [A]

Semiconductor Group 10 2003-Oct-01

 BTS711L1

Typ. standby current

Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1...4 = low

Ibb(off) [µA]
60

50

40

30

20

10

0
-50 0 50 100 150 200

Tj [°C]

Typ. initial short circuit shutdown time

toff(SC) = f (Tj,start ); Vbb =12 V

toff(SC) [msec]
6

0
-50 0 50 100 150 200

Tj,start [°C]

Semiconductor Group 11 2003-Oct-01

 BTS711L1

Timing diagrams
Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams
are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently
the diagrams are valid for each channel as well as for permuted channels
Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load
IN1
IN
IN2

t d(ST)
V bb ST

*)

V
OUT1 V
OUT

V
OUT2

IL
I L(OL)
ST open drain
t t

*) if the time constant of load is too large, open-load-status may

occur
Figure 2a: Switching a lamp:
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
IN
IN1 other channel: normal operation

ST

I
L1

V
OUT I
L(SCp)
I
L(SCr)

I
L

t
off(SC)
ST
t

t
The initial peak current should be limited by the lamp and not by
the initial short circuit current IL(SCp) = 7.5 A typ. of the device.
Heating up of the chip may require several milliseconds, depending
on external conditions (toff(SC) vs. Tj,start see page 11)

Semiconductor Group 12 2003-Oct-01

 BTS711L1
Figure 3b: Turn on into short circuit: Figure 5a: Open load: detection in ON-state, open
shut down by overtemperature, restart by cooling load occurs in on-state
(two parallel switched channels 1 and 2)
IN1
IN1/2

IN2 channel 2: normal operation

I +I
L1 L2
I L(SCp)

VOUT1

I L(SCr)
I L1 channel 1:
open open
load normal
load
load
t
off(SC) t d(ST OL1)
ST1/2 t d(ST OL2) t d(ST OL1) t d(ST OL2)
ST
t t

td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ

Figure 4a: Overtemperature:

Reset if Tj <Tjt Figure 5b: Open load: detection in ON-state, turn
on/off to open load

IN IN1

IN2 channel 2: normal operation

ST

V
OUT1
V
OUT

I
L1
channel 1: open load
T
J

t t t
d(ST) d(ST OL4) d(ST)
t
t d(ST OL5)
ST
t

The status delay time td(STOL4) allows to distinguish between the

failure modes "open load in ON-state" and "overtemperature".

Semiconductor Group 13 2003-Oct-01

 BTS711L1

Figure 5c: Open load: detection in ON- and OFF-state Figure 6b: Undervoltage restart of charge pump
(with REXT), turn on/off to open load

V on VON(CL)
IN1

IN2 channel 2: normal operation

off-state

on-state

off-state
OUT1
V
bb(over)

I L1 V
channel 1: open load V bb(o rst)
bb(u rst)

V
bb(u cp)

ST t t d(ST OL5) V
t d(ST) d(ST) bb(under)

V bb
t

td(ST OL5) depends on external circuitry because of high IN = high, normal load conditions.
impedance Charge pump starts at Vbb(ucp) = 5.6 V typ.

Figure 6a: Undervoltage: Figure 7a: Overvoltage:

IN IN

V Vbb V ON(CL) Vbb(over) V bb(o rst)

bb

V Vbb(u cp)
bb(under)
Vbb(u rst)

V
OUT
V OUT

ST
ST open drain

t t

Semiconductor Group 14 2003-Oct-01

 BTS711L1

Package and Ordering Code

Standard P-DSO-20-9 Ordering Code
BTS711L1 Q67060-S7000-A2

All dimensions in millimetres

1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side

Definition of soldering point with temperature Ts:

upper side of solder edge of device pin 15.

Pin 15

Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm2 active heatsink area) as a reference for max.
power dissipation Ptot, nominal load current IL(NOM) and thermal resistance Rthja

Semiconductor Group 15 2003-Oct-01

 BTS711L1

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.

Attention please!
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charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in
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Due to technical requirements components may contain dangerous substances. For information on the types in question please contact
your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to
affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or
other persons may be endangered.

Semiconductor Group 16 2003-Oct-01