M29W640FT

M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)
3V Supply Flash Memory

Feature summary
Supply voltage
– VCC = 2.7V to 3.6V for Program, Erase,
Read
– VPP =12 V for Fast Program (optional)
Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
TSOP48 (N)
Programming time 12 x 20mm
– 10 s per Byte/Word typical
– 4 Words / 8 Bytes Program
135 Memory Blocks
– 1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom location)
– 127 Main Blocks, 64 KBytes each
TFBGA48 (ZA)
Program/Erase Controller
6x8mm
– Embedded Byte/Word Program algorithms
Program/Erase Suspend and Resume
– Read from any Block during Program Extended Memory Block
Suspend Extra block used as security block or to store
– Read and Program another Block during additional information
Erase Suspend
Low power consumption
Unlock Bypass Program command – Standby and Automatic Standby
– Faster Production/Batch Programming
100,000 Program/Erase cycles per block
VPP/WP pin for Fast Program and Write Protect
Electronic Signature
Temporary Block Unprotection mode – Manufacturer Code: 0020h
Common Flash Interface ECOPACK® packages
– 64-bit Security Code

Table 1. Device Codes

Root Part Number Device Code

M29W640FT 22EDh
M29W640FB 22FDh

September 2008 Rev 8 1/71

www.Numonyx.com 1
Contents M29W640FT, M29W640FB

Contents

1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.1 Address Inputs (A0-A21) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
2.2 Data Inputs/Outputs (DQ0-DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
2.3 Data Inputs/Outputs (DQ8-DQ14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
2.4 Data Input/Output or Address Input (DQ15A–1) . . . . . . . . . . . . . . . . . . . .11
2.5 Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
2.6 Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
2.7 Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.8 VPP/Write Protect (VPP/WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.9 Reset/Block Temporary Unprotect (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.10 Ready/Busy Output (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.11 Byte/Word Organization Select (BYTE) . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.12 VCC Supply Voltage (2.7V to 3.6V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.13 VSS Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1 Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.2 Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3 Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.4 Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.5 Automatic Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6 Special Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6.1 Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6.2 Block Protect and Chip Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4 Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1 Standard commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1.1 Read/Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1.2 Auto Select command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1.3 Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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M29W640FT, M29W640FB Contents

4.1.4 Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4.1.5 Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1.6 Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1.7 Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.1.8 Program Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.1.9 Program Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.1.10 Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.2 Fast Program commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.2.1 Double Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.2.2 Quadruple Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.2.3 Octuple Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
4.2.4 Double Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
4.2.5 Quadruple Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
4.2.6 Unlock Bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
4.2.7 Unlock Bypass Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
4.2.8 Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4.3 Block Protection commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4.3.1 Enter Extended Block command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4.3.2 Exit Extended Block command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4.3.3 Block Protect and Chip Unprotect commands . . . . . . . . . . . . . . . . . . . . 26

5 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.1 Data Polling Bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.2 Toggle Bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.3 Error Bit (DQ5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.4 Erase Timer Bit (DQ3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.5 Alternative Toggle Bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

6 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

7 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

8 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

9 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Appendix A Block addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

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Contents M29W640FT, M29W640FB

Appendix B Common Flash Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57

Appendix C Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

C.1 Factory Locked Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
C.2 Customer Lockable Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

Appendix D Block protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

D.1 Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
D.2 In-System technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

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M29W640FT, M29W640FB List of tables

List of tables

Table 1. Device Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 3. Hardware protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 4. Bus operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 5. Bus operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 6. Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 7. Commands, 8-bit mode, BYTE = VIL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 8. Program, Erase times and Program, Erase Endurance cycles. . . . . . . . . . . . . . . . . . . . . . 29
Table 9. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 10. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 11. Operating and AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 12. Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 13. DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 14. Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 15. Write AC characteristics, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 16. Write AC characteristics, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 17. Reset/Block Temporary Unprotect AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 18. TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, package mechanical data . . . 44
Table 19. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package mechanical data . . . . . . 45
Table 20. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 21. Top Boot Block addresses, M29W640FT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 22. Bottom Boot Block addresses, M29W640FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Table 23. Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 24. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 25. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 26. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 27. Primary Algorithm-specific Extended Query table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 28. Security Code Area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 29. Extended Block address and data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 30. Programmer technique bus operations, BYTE = VIH or VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 31. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

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List of figures M29W640FT, M29W640FB

List of figures

Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Figure 2. TSOP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 3. TFBGA48 connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 4. Data Polling flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 5. Data Toggle flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 6. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 7. AC measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 8. Read Mode AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 9. Page Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 10. Write AC waveforms, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 11. Write AC waveforms, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 12. Reset/Block Temporary Unprotect AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 13. Accelerated Program Timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 14. TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, top view package outline . . . . 44
Figure 15. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package outline . . . . . . . . . . . . . . 45
Figure 16. Programmer Equipment Group Protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Figure 17. Programmer Equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Figure 18. In-System Equipment Group Protect flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Figure 19. In-System Equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69

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M29W640FT, M29W640FB Summary description

1 Summary description

The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.
The memory is divided into blocks that can be erased independently so it is possible to
preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte
(generally groups of four 64 KByte blocks), to prevent accidental Program or Erase
commands from modifying the memory. Program and Erase commands are written to the
Command Interface of the memory. An on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by taking care of all of the special
operations that are required to update the memory contents. The end of a program or erase
operation can be detected and any error conditions identified. The command set required to
control the memory is consistent with JEDEC standards.
The device features an asymmetrical blocked architecture. The device has an array of 135
blocks:
8 Parameters Blocks of 8 KBytes each (or 4 KWords each)
127 Main Blocks of 64 KBytes each (or 32 KWords each)
M29W640FT has the Parameter Blocks at the top of the memory address space while the
M29W640FB locates the Parameter Blocks starting from the bottom.
The M29W640F has an extra block, the Extended Block, of 128 Words in x16 mode or of
256 Byte in x8 mode that can be accessed using a dedicated command. The Extended
Block can be protected and so is useful for storing security information. However the
protection is not reversible, once protected the protection cannot be undone.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the
memory. They allow simple connection to most microprocessors, often without additional
logic.
The VPP/WP signal is used to enable faster programming of the device, enabling multiple
word/byte programming. If this signal is held at VSS, the boot block, and its adjacent
parameter block, are protected from program and erase operations.
The device supports Asynchronous Random Read and Page Read from all blocks of the
memory array.
The memories are offered in TSOP48 (12x 20mm) and TFBGA48 (6x8mm, 0.8mm pitch)
packages.
In order to meet environmental requirements, Numonyx offers the M29W640FT and the
M29W640FB in ECOPACK® packages. ECOPACK packages are Lead-free. The category
of second Level Interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an Numonyx trademark.
ECOPACK specifications are available at: www.Numonyx.com.
The memory is delivered with all the bits erased (set to 1).

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Summary description M29W640FT, M29W640FB

Figure 1. Logic diagram

Table 2. Signal names

A0-A21 Address Inputs
DQ0-DQ7 Data Inputs/Outputs
DQ8-DQ14 Data Inputs/Outputs
DQ15A–1 (or DQ15) Data Input/Output or Address Input (or Data Input/Output)
E Chip Enable
G Output Enable
W Write Enable
RP Reset/Block Temporary Unprotect
RB Ready/Busy Output
BYTE Byte/Word Organization Select
VCC Supply voltage
VPP /WP Supply voltage for Fast Program (optional) or Write Protect
VSS Ground
NC Not Connected Internally

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M29W640FT, M29W640FB Summary description

Figure 2. TSOP connections

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Summary description M29W640FT, M29W640FB

Figure 3. TFBGA48 connections (top view through package)

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M29W640FT, M29W640FB Signal descriptions

2 Signal descriptions

See Figure 1: Logic diagram, and Table 2: Signal names, for a brief overview of the signals
connected to this device.

2.1 Address Inputs (A0-A21)

The Address Inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command
Interface of the Program/Erase Controller.

2.2 Data Inputs/Outputs (DQ0-DQ7)

The Data I/O outputs the data stored at the selected address during a Bus Read operation.
During Bus Write operations they represent the commands sent to the Command Interface
of the Program/Erase Controller.

2.3 Data Inputs/Outputs (DQ8-DQ14)

The Data I/O outputs the data stored at the selected address during a Bus Read operation
when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high
impedance. During Bus Write operations the Command Register does not use these bits.
When reading the Status Register these bits should be ignored.

2.4 Data Input/Output or Address Input (DQ15A–1)

When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14).
When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the
LSB of the addressed Word, DQ15A–1 High will select the MSB. Throughout the text
consider references to the Data Input/Output to include this pin when BYTE is High and
references to the Address Inputs to include this pin when BYTE is Low except when stated
explicitly otherwise.

2.5 Chip Enable (E)

The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, VIH, all other pins are ignored.

2.6 Output Enable (G)

The Output Enable, G, controls the Bus Read operation of the memory.

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Signal descriptions M29W640FT, M29W640FB

2.7 Write Enable (W)

The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface.

2.8 VPP/Write Protect (VPP/WP)

The VPP/Write Protect pin provides two functions. The VPP function allows the memory to
use an external high voltage power supply to reduce the time required for Unlock Bypass
Program operations. The Write Protect function provides a hardware method of protecting
the two outermost boot blocks. The VPP/Write Protect pin must not be left floating or
unconnected.
When VPP/Write Protect is Low, VIL, the memory protects the two outermost boot blocks;
Program and Erase operations in this block are ignored while VPP/Write Protect is Low,
even when RP is at VID.
When VPP/Write Protect is High, VIH, the memory reverts to the previous protection status
of the two outermost boot blocks. Program and Erase operations can now modify the data in
the two outermost boot blocks unless the block is protected using Block Protection.
Applying VPPH to the VPP/WP pin will temporarily unprotect any block previously protected
(including the two outermost parameter blocks) using a High Voltage Block Protection
technique (In-System or Programmer technique). See Table 3: Hardware protection for
details.
When VPP/Write Protect is raised to VPP the memory automatically enters the Unlock
Bypass mode. When VPP/Write Protect returns to VIH or VIL normal operation resumes.
During Unlock Bypass Program operations the memory draws IPP from the pin to supply the
programming circuits. See the description of the Unlock Bypass command in the Command
Interface section. The transitions from VIH to VPP and from VPP to VIH must be slower than
tVHVPP, see Figure 13: Accelerated Program Timing waveforms.
Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the
memory may be left in an indeterminate state.
A 0.1 F capacitor should be connected between the VPP/Write Protect pin and the VSS
Ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during Unlock Bypass Program, IPP.

Table 3. Hardware protection

VPP /WP RP Function

VIH 2 outermost parameter blocks protected from Program/Erase operations

VIL
VID All blocks temporarily unprotected except the 2 outermost blocks
VIH or VID VID All blocks temporarily unprotected
VPPH VIH or VID All blocks temporarily unprotected

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M29W640FT, M29W640FB Signal descriptions

2.9 Reset/Block Temporary Unprotect (RP)

The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all Blocks that have been protected.
Note that if VPP/WP is at VIL, then the two outermost boot blocks will remain protected even
if RP is at VID.
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, VIL, for at
least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be
ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last.
See the Ready/Busy Output section, Table 17: Reset/Block Temporary Unprotect AC
characteristics and Figure 12: Reset/Block Temporary Unprotect AC waveforms, for more
details.
Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program
and Erase operations on all blocks will be possible. The transition from VIH to VID must be
slower than tPHPHH.

2.10 Ready/Busy Output (RB)

The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or Erase operation. During Program or Erase operations Ready/Busy
is Low, VOL. Ready/Busy is high-impedance during Read mode, Auto Select mode and
Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See Table 17: Reset/Block Temporary Unprotect AC
characteristics and Figure 12: Reset/Block Temporary Unprotect AC waveforms, for more
details.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.

2.11 Byte/Word Organization Select (BYTE)

The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus
modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in
x8 mode, when it is High, VIH, the memory is in x16 mode.

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2.12 VCC Supply Voltage (2.7V to 3.6V)

VCC provides the power supply for all operations (Read, Program and Erase).
The Command Interface is disabled when the VCC Supply voltage is less than the Lockout
Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data
during power up, power down and power surges. If the Program/Erase Controller is
programming or erasing during this time then the operation aborts and the memory contents
being altered will be invalid.
A 0.1 F capacitor should be connected between the VCC Supply voltage pin and the VSS
Ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during Program and Erase operations, ICC3.

2.13 VSS Ground

VSS is the reference for all voltage measurements. The device features two V SS pins which
must be both connected to the system ground.

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M29W640FT, M29W640FB Bus operations

3 Bus operations

There are five standard bus operations that control the device. These are Bus Read, Bus
Write, Output Disable, Standby and Automatic Standby. See Table 4: Bus operations, BYTE
= VIL and Table 5: Bus operations, BYTE = VIH, for a summary. Typically glitches of less
than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus
operations.

3.1 Bus Read

Bus Read operations read from the memory cells, or specific registers in the Command
Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write
Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 8: Read Mode
AC waveforms, and Table 14: Read AC characteristics, for details of when the output
becomes valid.

3.2 Bus Write

Bus Write operations write to the Command Interface. To speed up the read operation the
memory array can be read in Page mode where data is internally read and stored in a page
buffer. The Page has a size of 4 Words and is addressed by the address inputs A0-A1.
A valid Bus Write operation begins by setting the desired address on the Address Inputs.
The Address Inputs are latched by the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last. The Data Inputs/Outputs are latched by the
Command Interface on the rising edge of Chip Enable or Write Enable, whichever occurs
first. Output Enable must remain High, VIH, during the whole Bus Write operation. See
Figure 10: Write AC waveforms, Write Enable controlled, Figure 11: Write AC waveforms,
Chip Enable controlled, and Table 15: Write AC characteristics, Write Enable controlled and
Table 16: Write AC characteristics, Chip Enable controlled, for details of the timing
requirements.

3.3 Output Disable

The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.

3.4 Standby
When Chip Enable is High, VIH, the memory enters Standby mode and the Data
Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to
the Standby Supply Current, ICC2, Chip Enable should be held within VCC ± 0.2V. For the
Standby current level see Table 13: DC characteristics.
During program or erase operations the memory will continue to use the Program/Erase
Supply Current, ICC3, for Program or Erase operations until the operation completes.

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3.5 Automatic Standby

If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 300ns or
more the memory enters Automatic Standby where the internal Supply Current is reduced to
the Standby Supply Current, ICC2. The Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.

3.6 Special Bus operations

Additional bus operations can be performed to read the Electronic Signature and also to
apply and remove Block Protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require VID to be
applied to some pins.

3.6.1 Electronic Signature

The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in Table 4:
Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE = VIH.

3.6.2 Block Protect and Chip Unprotect

Groups of blocks can be protected against accidental Program or Erase. The Protection
Groups are shown in Appendix A: Block addresses Table 21 and Table 22. The whole chip
can be unprotected to allow the data inside the blocks to be changed.
The VPP/Write Protect pin can be used to protect the two outermost boot blocks. When
VPP /Write Protect is at VIL the two outermost boot blocks are protected and remain
protected regardless of the Block Protection Status or the Reset/Block Temporary
Unprotect pin status.
Block Protect and Chip Unprotect operations are described in Appendix D: Block protection.

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M29W640FT, M29W640FB Bus operations

Table 4. Bus operations, BYTE = VIL (1)

Data Inputs/Outputs
Address Inputs
Operation E G W
DQ15A–1, A0-A21
DQ14-DQ8 DQ7-DQ0

Bus Read VIL VIL VIH Cell address Hi-Z Data Output
Bus Write VIL VIH VIL Command address Hi-Z Data Input
Output Disable X VIH VIH X Hi-Z Hi-Z
Standby VIH X X X Hi-Z Hi-Z
A0-A3 = VIL, A6 = VIL ,
Read Manufacturer Code VIL VIL VIH Hi-Z 20h
A9 = VID, Others VIL or VIH
A0 = VIH, A1-A3= VIL,
EDh (M29W640FT)
Read Device Code VIL VIL VIH A6 = VIL, A9 = VID, Hi-Z
Others VIL or VIH FDh (M29W640FB)

A0 -A1 = VIH, A2-A3= VIL, 80h (Factory Locked)

Read Extended Memory
VIL VIL VIH A6 = VIL, A9 = VID, Hi-Z
Block Verify Code 00h (Customer Lockable)
Others VIL or VIH
A0,A2,A3, A6= VIL,
Read Block Protection A1= VIH, A9 = VID, 01h (protected)
VIL VIL VIH Hi-Z
Status A12-A21 = Block address, 00h (unprotected)
Others VIL or VIH
1. X = VIL or VIH .

Table 5. Bus operations, BYTE = VIH(1)

Address Inputs Data Inputs/Outputs
Operation E G W
A0-A21 DQ15A–1, DQ14-DQ0

Bus Read VIL VIL VIH Cell address Data Output

Bus Write VIL VIH VIL Command address Data Input
Output Disable X VIH VIH X Hi-Z
Standby VIH X X X Hi-Z
A0-A3 = VIL, A6 = VIL,
Read Manufacturer Code VIL VIL VIH 0020h
A9 = VID, Others VIL or VIH

A0 = VIH, A1-A3= VIL, A6 = VIL, 22EDh (M29W640FT)

Read Device Code VIL VIL VIH
A9 = VID, Others VIL or VIH 22FDh (M29W640FB)
A0 -A1 = VIH, A2-A3= VIL ,
Read Extended Memory 80h (Factory Locked)
VIL VIL VIH A6 = VIL, A9 = VID,
Block Verify Code 00h (Customer Lockable)
Others VIL or VIH
A0,A2,A3, A6= VIL , A1 = VIH, A9 = VID,
Read Block Protection 0001h (protected)
VIL VIL VIH A12-A21 = Block address,
Status 0000h (unprotected)
Others VIL or VIH
1. X = VIL or VIH .

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Command interface M29W640FT, M29W640FB

4 Command interface

All Bus Write operations to the memory are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. Failure to observe a
valid sequence of Bus Write operations will result in the memory returning to Read mode.
The long command sequences are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-
bit or 8-bit mode. See either Table 6, or Table 7, depending on the configuration that is being
used, for a summary of the commands.

4.1 Standard commands

4.1.1 Read/Reset command

The Read/Reset command returns the memory to its Read mode. It also resets the errors in
the Status Register. Either one or three Bus Write operations can be used to issue the
Read/Reset command.
The Read/Reset command can be issued, between Bus Write cycles before the start of a
program or erase operation, to return the device to read mode. If the Read/Reset command
is issued during the timeout of a Block Erase operation then the memory will take up to 10 s
to abort. During the abort period no valid data can be read from the memory. The
Read/Reset command will not abort an Erase operation when issued while in Erase
Suspend.

4.1.2 Auto Select command

The Auto Select command is used to read the Manufacturer Code, the Device Code, the
Block Protection Status and the Extended Memory Block Verify Code. Three consecutive
Bus Write operations are required to issue the Auto Select command. Once the Auto Select
command is issued the memory remains in Auto Select mode until a Read/Reset command
is issued. Read CFI Query and Read/Reset commands are accepted in Auto Select mode,
all other commands are ignored.
In Auto Select mode, the Manufacturer Code and the Device Code can be read by using a
Bus Read operation with addresses and control signals set as shown in Table 4: Bus
operations, BYTE = VIL and Table 5: Bus operations, BYTE = VIH, except for A9 that is
‘Don’t Care’.
The Block Protection Status of each block can be read using a Bus Read operation with
addresses and control signals set as shown in Table 4: Bus operations, BYTE = VIL and
Table 5: Bus operations, BYTE = VIH, except for A9 that is ‘Don’t Care’. If the addressed
block is protected then 01h is output on Data Inputs/Outputs DQ0-DQ7, otherwise 00h is
output (in 8-bit mode).
The protection status of the Extended Memory block, or Extended Memory Block Verify
code, can be read using a Bus Read operation with addresses and control signals set as
shown in Table 4: Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE = VIH,
except for A9 that is ‘Don’t Care’. If the Extended Block is "Factory Locked" then 80h is
output on Data Input/Outputs DQ0-DQ7, otherwise 00h is output (8-bit mode).

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M29W640FT, M29W640FB Command interface

4.1.3 Read CFI Query command

The Read CFI Query Command is used to read data from the Common Flash Interface
(CFI) Memory Area. This command is valid when the device is in the Read Array mode, or
when the device is in Autoselected mode.
One Bus Write cycle is required to issue the Read CFI Query Command. Once the
command is issued subsequent Bus Read operations read from the Common Flash
Interface Memory Area.
The Read/Reset command must be issued to return the device to the previous mode (the
Read Array mode or Autoselected mode). A second Read/Reset command would be
needed if the device is to be put in the Read Array mode from Autoselected mode.
See Appendix B: Common Flash Interface (CFI), Tables 23, 24, 25, 26, 27 and 28 for details
on the information contained in the Common Flash Interface (CFI) memory area.

4.1.4 Chip Erase command

The Chip Erase command can be used to erase the entire chip. Six Bus Write operations
are required to issue the Chip Erase Command and start the Program/Erase Controller.
If any blocks are protected then these are ignored and all the other blocks are erased. If all
of the blocks are protected the Chip Erase operation appears to start but will terminate
within about 100 s, leaving the data unchanged. No error condition is given when protected
blocks are ignored.
During the erase operation the memory will ignore all commands, including the Erase
Suspend command. It is not possible to issue any command to abort the operation. Typical
chip erase times are given in Table 8: Program, Erase times and Program, Erase
Endurance cycles. All Bus Read operations during the Chip Erase operation will output the
Status Register on the Data Inputs/Outputs. See the section on the Status Register for more
details.
After the Chip Erase operation has completed the memory will return to the Read Mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read Mode.
The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All
previous data is lost.

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4.1.5 Block Erase command

The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write
operations are required to select the first block in the list. Each additional block in the list can
be selected by repeating the sixth Bus Write operation using the address of the additional
block. The Block Erase operation starts the Program/Erase Controller about 50 s after the
last Bus Write operation. Once the Program/Erase Controller starts it is not possible to
select any more blocks. Each additional block must therefore be selected within 50 s of the
last block. The 50 s timer restarts when an additional block is selected. The Status Register
can be read after the sixth Bus Write operation. See the Status Register section for details
on how to identify if the Program/Erase Controller has started the Block Erase operation.
If any selected blocks are protected then these are ignored and all the other selected blocks
are erased. If all of the selected blocks are protected the Block Erase operation appears to
start but will terminate within about 100 s, leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the Block Erase operation the memory will ignore all commands except the Erase
Suspend command. Typical block erase times are given in Table 8: Program, Erase times
and Program, Erase Endurance cycles. All Bus Read operations during the Block Erase
operation will output the Status Register on the Data Inputs/Outputs. See the section on the
Status Register for more details.
After the Block Erase operation has completed the memory will return to the Read Mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read mode.
The Block Erase Command sets all of the bits in the unprotected selected blocks to ’1’. All
previous data in the selected blocks is lost.

4.1.6 Erase Suspend command

The Erase Suspend Command may be used to temporarily suspend a Block Erase
operation and return the memory to Read mode. The command requires one Bus Write
operation.
The Program/Erase Controller will suspend within the Erase Suspend Latency time of the
Erase Suspend Command being issued. Once the Program/Erase Controller has stopped
the memory will be set to Read mode and the Erase will be suspended. If the Erase
Suspend command is issued during the period when the memory is waiting for an additional
block (before the Program/Erase Controller starts) then the Erase is suspended immediately
and will start immediately when the Erase Resume Command is issued. It is not possible to
select any further blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and Program cells in blocks that are not being
erased; both Read and Program operations behave as normal on these blocks. If any
attempt is made to program in a protected block or in the suspended block then the Program
command is ignored and the data remains unchanged. The Status Register is not read and
no error condition is given. Reading from blocks that are being erased will output the Status
Register.
It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands
during an Erase Suspend. The Read/Reset command must be issued to return the device to
Read Array mode before the Resume command will be accepted.

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4.1.7 Erase Resume command

The Erase Resume command must be used to restart the Program/Erase Controller after an
Erase Suspend. The device must be in Read Array mode before the Resume command will
be accepted. An erase can be suspended and resumed more than once.

4.1.8 Program Suspend command

The Program Suspend command allows the system to interrupt a program operation so that
data can be read from any block. When the Program Suspend command is issued during a
program operation, the device suspends the program operation within the Program
Suspend Latency time (see Table 8: Program, Erase times and Program, Erase Endurance
cycles for value) and updates the Status Register bits.
After the program operation has been suspended, the system can read array data from any
address. However, data read from Program-Suspended addresses is not valid.
The Program Suspend command may also be issued during a program operation while an
erase is suspended. In this case, data may be read from any addresses not in Erase
Suspend or Program Suspend. If a read is needed from the Extended Block area (One-time
Program area), the user must use the proper command sequences to enter and exit this
region.
The system may also issue the Auto Select command sequence when the device is in the
Program Suspend mode. The system can read as many Auto Select codes as required.
When the device exits the Auto Select mode, the device reverts to the Program Suspend
mode, and is ready for another valid operation. See Auto Select command sequence for
more information.

4.1.9 Program Resume command

After the Program Resume command is issued, the device reverts to programming. The
controller can determine the status of the program operation using the DQ7 or DQ6 status
bits, just as in the standard program operation. See Write Operation Status for more
information.
The system must write the Program Resume command, to exit the Program Suspend mode
and to continue the programming operation.
Further issuing of the Resume command is ignored. Another Program Suspend command
can be written after the device has resumed programming.

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4.1.10 Program command

The Program command can be used to program a value to one address in the memory
array at a time. The command requires four Bus Write operations, the final write operation
latches the address and data, and starts the Program/Erase Controller.
Programming can be suspended and then resumed by issuing a Program Suspend
command and a Program Resume command, respectively (see Section 4.1.8: Program
Suspend command and Section 4.1.9: Program Resume command).
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
During the program operation the memory will ignore all commands. It is not possible to
issue any command to abort or pause the operation. Typical program times are given in
Table 8: Program, Erase times and Program, Erase Endurance cycles. Bus Read
operations during the program operation will output the Status Register on the Data
Inputs/Outputs. See the section on the Status Register for more details.
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs the memory will continue to output the Status
Register. A Read/Reset command must be issued to reset the error condition and return to
Read mode.
Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase
Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.

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4.2 Fast Program commands

There are four Fast Program commands available to improve the programming throughput,
by writing several adjacent words or bytes in parallel. The Double, Quadruple and Octuple
Byte Program commands are available for x8 operations, while the Double Quadruple Word
Program command are available for x16 operations.
Fast Program commands can be suspended and then resumed by issuing a Program
Suspend command and a Program Resume command, respectively (see Section 4.1.8:
Program Suspend command and Section 4.1.9: Program Resume command).
To perform some of the Fast Program commands, VPPH must be applied to VPP/WP pin.
Care must be taken because applying a VPPH to the VPP/WP pin will temporarily unprotect
any protected block.

4.2.1 Double Byte Program command

The Double Byte Program command is used to write a page of two adjacent Bytes in
parallel. The two bytes must differ only in DQ15A-1. Three bus write cycles are necessary to
issue the Double Byte Program command.
1. The first bus cycle sets up the Double Byte Program Command.
2. The second bus cycle latches the Address and the Data of the first byte to be written.
3. The third bus cycle latches the Address and the Data of the second byte to be written.

4.2.2 Quadruple Byte Program command(1)

The Quadruple Byte Program command is used to write a page of four adjacent Bytes in
parallel. The four bytes must differ only for addresses A0, DQ15A-1. Five bus write cycles
are necessary to issue the Quadruple Byte Program command.
1. The first bus cycle sets up the Quadruple Byte Program Command.
2. The second bus cycle latches the Address and the Data of the first byte to be written.
3. The third bus cycle latches the Address and the Data of the second byte to be written.
4. The fourth bus cycle latches the Address and the Data of the third byte to be written.
5. The fifth bus cycle latches the Address and the Data of the fourth byte to be written and
starts the Program/Erase Controller.

1. For devices with process technology code “H” in the marking, the Quadruple Byte Program command can be performed
without applying V PPH on the VPP/WP pin. For other devices, applying V PPH on the VPP/WP pin is mandatory.

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4.2.3 Octuple Byte Program command

This is used to write eight adjacent Bytes, in x8 mode, simultaneously. The addresses of the
eight Bytes must differ only in A1, A0 and DQ15A-1.
Nine bus write cycles are necessary to issue the command:
1. The first bus cycle sets up the command.
2. The second bus cycle latches the Address and the Data of the first Byte to be written.
3. The third bus cycle latches the Address and the Data of the second Byte to be written.
4. The fourth bus cycle latches the Address and the Data of the third Byte to be written.
5. The fifth bus cycle latches the Address and the Data of the fourth Byte to be written.
6. The sixth bus cycle latches the Address and the Data of the fifth Byte to be written.
7. The seventh bus cycle latches the Address and the Data of the sixth Byte to be written.
8. The eighth bus cycle latches the Address and the Data of the seventh Byte to be
written.
9. The ninth bus cycle latches the Address and the Data of the eighth Byte to be written
and starts the Program/Erase Controller.
To perform the Quadruple Byte Program command, it is necessary to apply VPPH to the
VPP/WP pin.

4.2.4 Double Word Program command(2)

The Double Word Program command is used to write a page of two adjacent Words in
parallel. The two Words must differ only for the address A0.
Three bus write cycles are necessary to issue the Double Word Program command.
The first bus cycle sets up the Quadruple Word Program Command.
The second bus cycle latches the Address and the Data of the first Word to be written.
The third bus cycle latches the Address and the Data of the second Word to be written
and starts the Program/Erase Controller.
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs Bus Read operations will continue to output
the Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read mode.
Note that the Fast Program commands cannot change a bit set at ’0’ back to ’1’. One of the
Erase Commands must be used to set all the bits in a block or in the whole memory from ’0’
to ’1’.
Typical Program times are given in Table 8: Program, Erase times and Program, Erase
Endurance cycles.

2. For devices with process technology code “H” in the marking, the Double Word Program command can be performed
without applying V PPH on the VPP/WP pin. For other devices, applying V PPH on the VPP/WP pin is mandatory.

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4.2.5 Quadruple Word Program command

This is used to write a page of four adjacent Words (or 8 adjacent Bytes), in x16 mode,
simultaneously. The addresses of the four Words must differ only in A1 and A0.
Five bus write cycles are necessary to issue the command:
The first bus cycle sets up the command.
The second bus cycle latches the Address and the Data of the first Word to be written.
The third bus cycle latches the Address and the Data of the second Word to be written.
The fourth bus cycle latches the Address and the Data of the third Word to be written.
The fifth bus cycle latches the Address and the Data of the fourth Word to be written
and starts the Program/Erase Controller.
To perform the Quadruple Byte Program command, it is necessary to apply VPPH to the
VPP/WP pin.

4.2.6 Unlock Bypass command

The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory faster than with the standard program commands. When
the cycle time to the device is long, considerable time saving can be made by using these
commands. Three Bus Write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
When VPP is applied to the VPP/Write Protect pin the memory automatically enters the
Unlock Bypass mode and the Unlock Bypass Program command can be issued
immediately.

4.2.7 Unlock Bypass Program command

The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory. When the cycle time to the device is long, considerable
time saving can be made by using these commands. Three Bus Write operations are
required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
The memory offers accelerated program operations through the VPP/Write Protect pin.
When the system asserts VPP on the VPP/Write Protect pin, the memory automatically
enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass
program command sequence. The memory uses the higher voltage on the VPP/Write
Protect pin, to accelerate the Unlock Bypass Program operation.
Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the
memory may be left in an indeterminate state.

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4.2.8 Unlock Bypass Reset command

The Unlock Bypass Reset command can be used to return to Read/Reset mode from
Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass
Reset command. Read/Reset command does not exit from Unlock Bypass Mode.

4.3 Block Protection commands

4.3.1 Enter Extended Block command

The device has an extra 256 Byte block (Extended Block) that can only be accessed using
the Enter Extended Block command. Three Bus write cycles are required to issue the
Extended Block command. Once the command has been issued the device enters
Extended Block mode where all Bus Read or Write operations to the Boot Block addresses
access the Extended Block. The Extended Block (with the same address as the Boot
Blocks) cannot be erased, and can be treated as one-time programmable (OTP) memory. In
Extended Block mode the Boot Blocks are not accessible.
To exit from the Extended Block mode the Exit Extended Block command must be issued.
The Extended Block can be protected, however once protected the protection cannot be
undone.

4.3.2 Exit Extended Block command

The Exit Extended Block command is used to exit from the Extended Block mode and return
the device to Read mode. Four Bus Write operations are required to issue the command.

4.3.3 Block Protect and Chip Unprotect commands

Groups of blocks can be protected against accidental Program or Erase. The Protection
Groups are shown in Appendix A: Block addresses, Table 21: Top Boot Block addresses,
M29W640FT and Table 22: Bottom Boot Block addresses, M29W640FB. The whole chip
can be unprotected to allow the data inside the blocks to be changed.
Block Protect and Chip Unprotect operations are described in Appendix D: Block protection.

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M29W640FT, M29W640FB Command interface

Table 6. Commands, 16-bit mode, BYTE = VIH(1)

Bus Write operations

Length
Command 1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

1 X F0
Read/Reset
3 555 AA 2AA 55 X F0
Auto Select 3 555 AA 2AA 55 555 90
Program 4 555 AA 2AA 55 555 A0 PA PD
Double Word Program 3 555 50 PA0 PD0 PA1 PD1
Quadruple Word
5 555 56 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3
Program
Unlock Bypass 3 555 AA 2AA 55 555 20
Unlock Bypass
2 X A0 PA PD
Program
Unlock Bypass Reset 2 X 90 X 00
Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Block Erase 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30
Program/Erase
1 X B0
Suspend
Program/Erase
1 X 30
Resume
Read CFI Query 1 55 98
Enter Extended Block 3 555 AA 2AA 55 555 88
Exit Extended Block 4 555 AA 2AA 55 555 90 X 00
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in
hexadecimal. The Command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-
DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

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Command interface M29W640FT, M29W640FB

Table 7. Commands, 8-bit mode, BYTE = VIL

Bus Write operations(1)

Length
Command 1st 2nd 3rd 4th 5th 6th 7th 8th 9th

Add Data Add Data Add Data Add Data Add Data Add Data Add Data Add Data Add Data
1 X F0
Read/Reset
3 AAA AA 555 55 X F0
Auto Select 3 AAA AA 555 55 AAA 90
Program 4 AAA AA 555 55 AAA A0 PA PD
Double Byte
3 AAA 50 PA0 PD0 PA1 PD1
Program
Quadruple
5 AAA 56 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3
Byte Program
Octuple Byte
9 AAA 8B PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3 PA4 PD4 PA5 PD5 PA6 PD6 PA7 PD7
Program
Unlock Bypass 3 AAA AA 555 55 AAA 20
Unlock Bypass
2 X A0 PA PD
Program
Unlock Bypass
2 X 90 X 00
Reset
Chip Erase 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10
Block Erase 6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30
Program/Erase
1 X B0
Suspend
Program/Erase
1 X 30
Resume
Read CFI
1 AA 98
Query
Enter
Extended 3 AAA AA 555 55 AAA 88
Block
Exit Extended
4 AAA AA 555 55 AAA 90 X 00
Block
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in
hexadecimal. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-
DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is V IL or DQ15 when BYTE is VIH.

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M29W640FT, M29W640FB Command interface

Table 8. Program, Erase times and Program, Erase Endurance cycles

Parameter Min Typ(1)(2) Max(2) Unit

Chip Erase 80 400(3) s

Block Erase (64 KBytes) 0.8 6(4) s
(4)
Erase Suspend Latency time 50 s
(3)
Program (Byte or Word) 10 200 s
Double Byte 10 200(3) s
(3)
Double Word /Quadruple Byte Program 10 200 s
Quadruple Word / Octuple Byte Program 10 200(3) s
(3)
Chip Program (Byte by Byte) 80 400 s
Chip Program (Word by Word) 40 200(3) s
(3)
Chip Program (Double Word/Quadruple Byte Program) 20 100 s
(3)
Chip Program (Quadruple Word/Octuple Byte Program) 10 50 s
Program Suspend Latency time 4 s
Program/Erase Cycles (per Block) 100,000 cycles
Data Retention 20 years
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V CC after 100,00 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and V CC .

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Status Register M29W640FT, M29W640FB

5 Status Register

Bus Read operations from any address always read the Status Register during Program
and Erase operations. It is also read during Erase Suspend when an address within a block
being erased is accessed.
The bits in the Status Register are summarized in Table 9: Status Register Bits.

5.1 Data Polling Bit (DQ7)

The Data Polling Bit can be used to identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Data
Polling Bit is output on DQ7 when the Status Register is read.
During Program operations the Data Polling Bit outputs the complement of the bit being
programmed to DQ7. After successful completion of the Program operation the memory
returns to Read mode and Bus Read operations from the address just programmed output
DQ7, not its complement.
During Erase operations the Data Polling Bit outputs ’0’, the complement of the erased state
of DQ7. After successful completion of the Erase operation the memory returns to Read
Mode.
In Erase Suspend mode the Data Polling Bit will output a ’1’ during a Bus Read operation
within a block being erased. The Data Polling Bit will change from a ’0’ to a ’1’ when the
Program/Erase Controller has suspended the Erase operation.
Figure 4: Data Polling flowchart, gives an example of how to use the Data Polling Bit. A
Valid Address is the address being programmed or an address within the block being
erased.

5.2 Toggle Bit (DQ6)

The Toggle Bit can be used to identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Toggle
Bit is output on DQ6 when the Status Register is read.
During Program and Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations at any address. After successful completion of the
operation the memory returns to Read mode.
During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block
being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has
suspended the Erase operation.
Figure 5: Data Toggle flowchart, gives an example of how to use the Data Toggle Bit.

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M29W640FT, M29W640FB Status Register

5.3 Error Bit (DQ5)

The Error Bit can be used to identify errors detected by the Program/Erase Controller. The
Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the
correct data to the memory. If the Error Bit is set a Read/Reset command must be issued
before other commands are issued. The Error bit is output on DQ5 when the Status Register
is read.
Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to
do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’.
One of the Erase commands must be used to set all the bits in a block or in the whole
memory from ’0’ to ’1’.

5.4 Erase Timer Bit (DQ3)

The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation
during a Block Erase command. Once the Program/Erase Controller starts erasing the
Erase Timer Bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer Bit
is set to ’0’ and additional blocks to be erased may be written to the Command Interface.
The Erase Timer Bit is output on DQ3 when the Status Register is read.

5.5 Alternative Toggle Bit (DQ2)

The Alternative Toggle Bit can be used to monitor the Program/Erase controller during
Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is
read.
During Chip Erase and Block Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’,
etc., with successive Bus Read operations from addresses within the blocks being erased.
A protected block is treated the same as a block not being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with
successive Bus Read operations from addresses within the blocks being erased. Bus Read
operations to addresses within blocks not being erased will output the memory cell data as if
in Read mode.
After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be
used to identify which block or blocks have caused the error. The Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses
within blocks that have not erased correctly. The Alternative Toggle Bit does not change if
the addressed block has erased correctly.

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Status Register M29W640FT, M29W640FB

Table 9. Status Register Bits(1)

Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 RB

Program Any address DQ7 Toggle 0 – – 0

Program During Erase
Any address DQ7 Toggle 0 – – 0
Suspend
Program Error Any address DQ7 Toggle 1 – – Hi-Z
Chip Erase Any address 0 Toggle 0 1 Toggle 0

Block Erase before Erasing Block 0 Toggle 0 0 Toggle 0

timeout Non-Erasing Block 0 Toggle 0 0 No Toggle 0
Erasing Block 0 Toggle 0 1 Toggle 0
Block Erase
Non-Erasing Block 0 Toggle 0 1 No Toggle 0
Erasing Block 1 No Toggle 0 – Toggle Hi-Z
Erase Suspend
Non-Erasing Block Data read as normal Hi-Z
Good Block address 0 Toggle 1 1 No Toggle Hi-Z
Erase Error
Faulty Block address 0 Toggle 1 1 Toggle Hi-Z
1. Unspecified data bits should be ignored.

Figure 4. Data Polling flowchart

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M29W640FT, M29W640FB Status Register

Figure 5. Data Toggle flowchart

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Maximum rating M29W640FT, M29W640FB

6 Maximum rating

Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the
Operating sections of this specification is not implied. Refer also to the Numonyx SURE
Program and other relevant quality documents.

Table 10. Absolute maximum ratings

Symbol Parameter Min Max Unit

TBIAS Temperature under bias –50 125 °C

TSTG Storage temperature –65 150 °C
VIO Input or Output voltage (1)(2) –0.6 VCC +0.6 V
VCC Supply voltage –0.6 4 V
VID Identification voltage –0.6 13.5 V
VPP(3) Program voltage –0.6 13.5 V
1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.
2. Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions.
3. VPP must not remain at 12V for more than a total of 80hrs.

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M29W640FT, M29W640FB DC and AC parameters

7 DC and AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC Characteristic tables that
follow are derived from tests performed under the Measurement Conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.

Table 11. Operating and AC measurement conditions

M29W640FT, M29W640FB Unit
Parameter
Min Max

VCC Supply voltage 2.7 3.6 V

Ambient Operating Temperature –40 85 °C
Load capacitance (CL) 30 pF
Input Rise and Fall times 10 ns
Input Pulse voltages 0 to VCC V
Input and Output Timing Ref. voltages VCC/2 V

Figure 6. AC measurement I/O waveform

Figure 7. AC measurement Load Circuit

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DC and AC parameters M29W640FT, M29W640FB

Table 12. Device capacitance

Symbol Parameter Test condition Min Max Unit

CIN Input capacitance VIN = 0V 6 pF

COUT Output capacitance VOUT = 0V 12 pF

1. Sampled only, not 100% tested.

Table 13. DC characteristics

Symbol Parameter Test condition Min Max Unit

ILI Input Leakage Current 0V VIN VCC ±1 A

ILO Output Leakage Current 0V VOUT VCC ±1 A
E = VIL, G = V IH,
ICC1 Supply Current (Read) 10 mA
f = 6MHz
E = VCC ±0.2V,
ICC2 Supply Current (Standby) 100 A
RP = V CC ±0.2V
VPP/WP =
Supply Current Program/Erase 20 mA
ICC3 VIL or VIH
(Program/Erase) Controller active
VPP /WP = VPP 20 mA
VIL Input Low voltage –0.5 0.8 V
VIH Input High voltage 0.7VCC VCC +0.3 V
Voltage for VPP/WP
VPP VCC = 2.7V ±10% 11.5 12.5 V
Program Acceleration
Current for VPP/WP
IPP VCC = 2.7V ±10% 15 mA
Program Acceleration
VOL Output Low voltage IOL = 1.8mA 0.45 V
VOH Output High voltage IOH = –100 A VCC –0.4 V
VID Identification voltage 11.5 12.5 V
Program/Erase Lockout
VLKO(1) 1.8 2.3 V
Supply voltage
1. Sampled only, not 100% tested.

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M29W640FT, M29W640FB DC and AC parameters

Figure 8. Read Mode AC waveforms

Figure 9. Page Read AC waveforms

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DC and AC parameters M29W640FT, M29W640FB

Table 14. Read AC characteristics

M29W640FT,
M29W640FB
Symbol Alt Parameter Test condition Unit
60 70

E = VIL,
tAVAV tRC Address Valid to Next Address Valid Min 60 70 ns
G = VIL
E = VIL,
tAVQV tACC Address Valid to Output Valid Max 60 70 ns
G = VIL
E = VIL,
tAVQV1 tPAGE Address Valid to Output Valid (Page) Max 25 25 ns
G = VIL
tELQX (1) tLZ Chip Enable Low to Output Transition G = VIL Min 0 0 ns
tELQV tCE Chip Enable Low to Output Valid G = VIL Max 60 70 ns
Output Enable Low to Output
tGLQX (1) tOLZ E = V IL Min 0 0 ns
Transition
tGLQV tOE Output Enable Low to Output Valid E = V IL Max 25 25 ns
(1)
tEHQZ tHZ Chip Enable High to Output Hi-Z G = VIL Max 25 25 ns
tGHQZ (1) tDF Output Enable High to Output Hi-Z E = V IL Max 25 25 ns
tEHQX
Chip Enable, Output Enable or
tGHQX tOH Min 0 0 ns
Address Transition to Output Transition
tAXQX
tELBL tELFL
Chip Enable to BYTE Low or High Max 5 5 ns
tELBH tELFH

tBLQZ tFLQZ BYTE Low to Output Hi-Z Max 25 25 ns

tBHQV tFHQV BYTE High to Output Valid Max 30 30 ns
1. Sampled only, not 100% tested.

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M29W640FT, M29W640FB DC and AC parameters

Figure 10. Write AC waveforms, Write Enable controlled

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DC and AC parameters M29W640FT, M29W640FB

Table 15. Write AC characteristics, Write Enable controlled

M29W640FT,
M29W640FB
Symbol Alt Parameter Unit
60 70

tAVAV tWC Address Valid to Next Address Valid Min 60 70 ns

tELWL tCS Chip Enable Low to Write Enable Low Min 0 0 ns
tWLWH tWP Write Enable Low to Write Enable High Min 45 45 ns
tDVWH tDS Input Valid to Write Enable High Min 45 45 ns
tWHDX tDH Write Enable High to Input Transition Min 0 0 ns
tWHEH tCH Write Enable High to Chip Enable High Min 0 0 ns
tWHWL tWPH Write Enable High to Write Enable Low Min 30 30 ns
tAVWL tAS Address Valid to Write Enable Low Min 0 0 ns
tWLAX tAH Write Enable Low to Address Transition Min 45 45 ns
tGHWL Output Enable High to Write Enable Low Min 0 0 ns
tWHGL tOEH Write Enable High to Output Enable Low Min 0 0 ns
tWHRL(1) tBUSY Program/Erase Valid to RB Low Max 30 30 ns
tVCHEL tVCS VCC High to Chip Enable Low Min 50 50 s
1. Sampled only, not 100% tested.

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M29W640FT, M29W640FB DC and AC parameters

Figure 11. Write AC waveforms, Chip Enable controlled

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DC and AC parameters M29W640FT, M29W640FB

Table 16. Write AC characteristics, Chip Enable controlled

M29W640FT, M29W640FB
Symbol Alt Parameter Unit
60 70

tAVAV tWC Address Valid to Next Address Valid Min 60 70 ns

tWLEL tWS Write Enable Low to Chip Enable Low Min 0 0 ns
tELEH tCP Chip Enable Low to Chip Enable High Min 45 45 ns
tDVEH tDS Input Valid to Chip Enable High Min 45 45 ns
tEHDX tDH Chip Enable High to Input Transition Min 0 0 ns
tEHWH tWH Chip Enable High to Write Enable High Min 0 0 ns
tEHEL tCPH Chip Enable High to Chip Enable Low Min 30 30 ns
tAVEL tAS Address Valid to Chip Enable Low Min 0 0 ns
tELAX tAH Chip Enable Low to Address Transition Min 45 45 ns
tGHEL Output Enable High Chip Enable Low Min 0 0 ns
tEHGL tOEH Chip Enable High to Output Enable Low Min 0 0 ns
tEHRL(1) tBUSY Program/Erase Valid to RB Low Max 30 30 ns
tVCHWL tVCS VCC High to Write Enable Low Min 50 50 s
1. Sampled only, not 100% tested.

Figure 12. Reset/Block Temporary Unprotect AC waveforms

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M29W640FT, M29W640FB DC and AC parameters

Figure 13. Accelerated Program Timing waveforms

Table 17. Reset/Block Temporary Unprotect AC characteristics

M29W640FT,
Symbol Alt Parameter Unit
M29W640FB

tPHWL(1)
RP High to Write Enable Low, Chip Enable Low,
tPHEL tRH Min 50 ns
Output Enable Low
tPHGL(1)
tRHWL(1)
RB High to Write Enable Low, Chip Enable Low,
tRHEL(1) tRB Min 0 ns
Output Enable Low
tRHGL(1)
tPLPX tRP RP Pulse Width Min 500 ns
tPLYH tREADY RP Low to Read mode Max 50 s
tPHPHH(1) tVIDR RP Rise Time to VID Min 500 ns
tVHVPP(1) VPP Rise and Fall Time Min 250 ns
1. Sampled only, not 100% tested.

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Package mechanical M29W640FT, M29W640FB

8 Package mechanical

Figure 14. TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, top view
package outline

1. Drawing is not to scale.

Table 18. TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, package
mechanical data
millimeters inches
Symbol
Typ Min Max Typ Min Max

A 1.200 0.0472
A1 0.100 0.050 0.150 0.0039 0.0020 0.0059
A2 1.000 0.950 1.050 0.0394 0.0374 0.0413
B 0.220 0.170 0.270 0.0087 0.0067 0.0106
C 0.100 0.210 0.0039 0.0083
CP 0.100 0.0039
D1 12.000 11.900 12.100 0.4724 0.4685 0.4764
E 20.000 19.800 20.200 0.7874 0.7795 0.7953
E1 18.400 18.300 18.500 0.7244 0.7205 0.7283
e 0.500 – – 0.0197 – –
L 0.600 0.500 0.700 0.0236 0.0197 0.0276
L1 0.800 0.0315
3° 0° 5° 3° 0° 5°

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M29W640FT, M29W640FB Package mechanical

Figure 15. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package outline

1. Drawing is not to scale.

Table 19. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package
mechanical data
millimeters inches
Symbol
Typ Min Max Typ Min Max

A 1.200 0.0472
A1 0.260 0.0102
A2 0.900 0.0354
b 0.350 0.450 0.0138 0.0177
D 6.000 5.900 6.100 0.2362 0.2323 0.2402
D1 4.000 – – 0.1575 – –
ddd 0.100 0.0039
E 8.000 7.900 8.100 0.3150 0.3110 0.3189
E1 5.600 – – 0.2205 – –
e 0.800 – – 0.0315 – –
FD 1.000 – – 0.0394 – –
FE 1.200 – – 0.0472 – –
SD 0.400 – – 0.0157 – –
SE 0.400 – – 0.0157 – –

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Part numbering M29W640FT, M29W640FB

9 Part numbering

Table 20. Ordering information scheme

Example: M29W640FB 70 N 6 F

Device Type
M29

Operating Voltage
W = VCC = 2.7 to 3.6V

Device Function
640F = 64 Mbit (x8 / x16), Boot Block

Array Matrix
T = Top Boot
B = Bottom Boot

Speed
60 = 60ns
70 = 70ns

Package
N = TSOP48: 12 x 20 mm
ZA = TFBGA48: 6x8mm, 0.80 mm pitch

Temperature Range
6 = 40 to 85 °C

Option
E = ECOPACK Package, Standard Packing
F = ECOPACK Package, Tape & Reel Packing

Note: This product is also available with the Extended Block factory locked. For further details and
ordering information contact your nearest Numonyx sales office.
Devices are shipped from the factory with the memory content bits erased to 1. For a list of
available options (Speed, Package, etc.) or for further information on any aspect of this
device, please contact your nearest Numonyx Sales Office.

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M29W640FT, M29W640FB Block addresses

Appendix A Block addresses

Table 21. Top Boot Block addresses, M29W640FT

Block KBytes/KWords Protection Block Group (x8) (x16)

0 64/32 000000h–00FFFFh(1) 000000h–007FFFh(1)

1 64/32 010000h–01FFFFh 008000h–00FFFFh
Protection Group
2 64/32 020000h–02FFFFh 010000h–017FFFh
3 64/32 030000h–03FFFFh 018000h–01FFFFh
4 64/32 040000h–04FFFFh 020000h–027FFFh
5 64/32 050000h–05FFFFh 028000h–02FFFFh
Protection Group
6 64/32 060000h–06FFFFh 030000h–037FFFh
7 64/32 070000h–07FFFFh 038000h–03FFFFh
8 64/32 080000h–08FFFFh 040000h–047FFFh
9 64/32 090000h–09FFFFh 048000h–04FFFFh
Protection Group
10 64/32 0A0000h–0AFFFFh 050000h–057FFFh
11 64/32 0B0000h–0BFFFFh 058000h–05FFFFh
12 64/32 0C0000h–0CFFFFh 060000h–067FFFh
13 64/32 0D0000h–0DFFFFh 068000h–06FFFFh
Protection Group
14 64/32 0E0000h–0EFFFFh 070000h–077FFFh
15 64/32 0F0000h–0FFFFFh 078000h–07FFFFh
16 64/32 100000h–10FFFFh 080000h–087FFFh
17 64/32 110000h–11FFFFh 088000h–08FFFFh
Protection Group
18 64/32 120000h–12FFFFh 090000h–097FFFh
19 64/32 130000h–13FFFFh 098000h–09FFFFh
20 64/32 140000h–14FFFFh 0A0000h–0A7FFFh
21 64/32 150000h–15FFFFh 0A8000h–0AFFFFh
Protection Group
22 64/32 160000h–16FFFFh 0B0000h–0B7FFFh
23 64/32 170000h–17FFFFh 0B8000h–0BFFFFh
24 64/32 180000h–18FFFFh 0C0000h–0C7FFFh
25 64/32 190000h–19FFFFh 0C8000h–0CFFFFh
Protection Group
26 64/32 1A0000h–1AFFFFh 0D0000h–0D7FFFh
27 64/32 1B0000h–1BFFFFh 0D8000h–0DFFFFh
28 64/32 1C0000h–1CFFFFh 0E0000h–0E7FFFh
29 64/32 1D0000h–1DFFFFh 0E8000h–0EFFFFh
Protection Group
30 64/32 1E0000h–1EFFFFh 0F0000h–0F7FFFh
31 64/32 1F0000h–1FFFFFh 0F8000h–0FFFFFh

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Block addresses M29W640FT, M29W640FB

Table 21. Top Boot Block addresses, M29W640FT (continued)

Block KBytes/KWords Protection Block Group (x8) (x16)

32 64/32 200000h–20FFFFh 100000h–107FFFh

33 64/32 210000h–21FFFFh 108000h–10FFFFh
Protection Group
34 64/32 220000h–22FFFFh 110000h–117FFFh
35 64/32 230000h–23FFFFh 118000h–11FFFFh
36 64/32 240000h–24FFFFh 120000h–127FFFh
37 64/32 250000h–25FFFFh 128000h–12FFFFh
Protection Group
38 64/32 260000h–26FFFFh 130000h–137FFFh
39 64/32 270000h–27FFFFh 138000h–13FFFFh
40 64/32 280000h–28FFFFh 140000h–147FFFh
41 64/32 290000h–29FFFFh 148000h–14FFFFh
Protection Group
42 64/32 2A0000h–2AFFFFh 150000h–157FFFh
43 64/32 2B0000h–2BFFFFh 158000h–15FFFFh
44 64/32 2C0000h–2CFFFFh 160000h–167FFFh
45 64/32 2D0000h–2DFFFFh 168000h–16FFFFh
Protection Group
46 64/32 2E0000h–2EFFFFh 170000h–177FFFh
47 64/32 2F0000h–2FFFFFh 178000h–17FFFFh
48 64/32 300000h–30FFFFh 180000h–187FFFh
49 64/32 310000h–31FFFFh 188000h–18FFFFh
Protection Group
50 64/32 320000h–32FFFFh 190000h–197FFFh
51 64/32 330000h–33FFFFh 198000h–19FFFFh
52 64/32 340000h–34FFFFh 1A0000h–1A7FFFh
53 64/32 350000h–35FFFFh 1A8000h–1AFFFFh
Protection Group
54 64/32 360000h–36FFFFh 1B0000h–1B7FFFh
55 64/32 370000h–37FFFFh 1B8000h–1BFFFFh
56 64/32 380000h–38FFFFh 1C0000h–1C7FFFh
57 64/32 390000h–39FFFFh 1C8000h–1CFFFFh
Protection Group
58 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh
59 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh
60 64/32 3C0000h–3CFFFFh 1E0000h–1E7FFFh
61 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh
Protection Group
62 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh
63 64/32 3F0000h–3FFFFFh 1F8000h–1FFFFFh

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M29W640FT, M29W640FB Block addresses

Table 21. Top Boot Block addresses, M29W640FT (continued)

Block KBytes/KWords Protection Block Group (x8) (x16)

64 64/32 400000h–40FFFFh 200000h–207FFFh

65 64/32 410000h–41FFFFh 208000h–20FFFFh
Protection Group
66 64/32 420000h–42FFFFh 210000h–217FFFh
67 64/32 430000h–43FFFFh 218000h–21FFFFh
68 64/32 440000h–44FFFFh 220000h–227FFFh
69 64/32 450000h–45FFFFh 228000h–22FFFFh
Protection Group
70 64/32 460000h–46FFFFh 230000h–237FFFh
71 64/32 470000h–47FFFFh 238000h–23FFFFh
72 64/32 480000h–48FFFFh 240000h–247FFFh
73 64/32 490000h–49FFFFh 248000h–24FFFFh
Protection Group
74 64/32 4A0000h–4AFFFFh 250000h–257FFFh
75 64/32 4B0000h–4BFFFFh 258000h–25FFFFh
76 64/32 4C0000h–4CFFFFh 260000h–267FFFh
77 64/32 4D0000h–4DFFFFh 268000h–26FFFFh
Protection Group
78 64/32 4E0000h–4EFFFFh 270000h–277FFFh
79 64/32 4F0000h–4FFFFFh 278000h–27FFFFh
80 64/32 500000h–50FFFFh 280000h–287FFFh
81 64/32 510000h–51FFFFh 288000h–28FFFFh
Protection Group
82 64/32 520000h–52FFFFh 290000h–297FFFh
83 64/32 530000h–53FFFFh 298000h–29FFFFh
84 64/32 540000h–54FFFFh 2A0000h–2A7FFFh
85 64/32 550000h–55FFFFh 2A8000h–2AFFFFh
Protection Group
86 64/32 560000h–56FFFFh 2B0000h–2B7FFFh
87 64/32 570000h–57FFFFh 2B8000h–2BFFFFh
88 64/32 580000h–58FFFFh 2C0000h–2C7FFFh
89 64/32 590000h–59FFFFh 2C8000h–2CFFFFh
Protection Group
90 64/32 5A0000h–5AFFFFh 2D0000h–2D7FFFh
91 64/32 5B0000h–5BFFFFh 2D8000h–2DFFFFh
92 64/32 5C0000h–5CFFFFh 2E0000h–2E7FFFh
93 64/32 5D0000h–5DFFFFh 2E8000h–2EFFFFh
Protection Group
94 64/32 5E0000h–5EFFFFh 2F0000h–2F7FFFh
95 64/32 5F0000h–5FFFFFh 2F8000h–2FFFFFh

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Table 21. Top Boot Block addresses, M29W640FT (continued)

Block KBytes/KWords Protection Block Group (x8) (x16)

96 64/32 600000h–60FFFFh 300000h–307FFFh

97 64/32 610000h–61FFFFh 308000h–30FFFFh
Protection Group
98 64/32 620000h–62FFFFh 310000h–317FFFh
99 64/32 630000h–63FFFFh 318000h–31FFFFh
100 64/32 640000h–64FFFFh 320000h–327FFFh
101 64/32 650000h–65FFFFh 328000h–32FFFFh
Protection Group
102 64/32 660000h–66FFFFh 330000h–337FFFh
103 64/32 670000h–67FFFFh 338000h–33FFFFh
104 64/32 680000h–68FFFFh 340000h–347FFFh
105 64/32 690000h–69FFFFh 348000h–34FFFFh
Protection Group
106 64/32 6A0000h–6AFFFFh 350000h–357FFFh
107 64/32 6B0000h–6BFFFFh 358000h–35FFFFh
108 64/32 6C0000h–6CFFFFh 360000h–367FFFh
109 64/32 6D0000h–6DFFFFh 368000h–36FFFFh
Protection Group
110 64/32 6E0000h–6EFFFFh 370000h–377FFFh
111 64/32 6F0000h–6FFFFFh 378000h–37FFFFh
112 64/32 700000h–70FFFFh 380000h–387FFFh
113 64/32 710000h–71FFFFh 388000h–38FFFFh
Protection Group
114 64/32 720000h–72FFFFh 390000h–397FFFh
115 64/32 730000h–73FFFFh 398000h–39FFFFh
116 64/32 740000h–74FFFFh 3A0000h–3A7FFFh
117 64/32 750000h–75FFFFh 3A8000h–3AFFFFh
Protection Group
118 64/32 760000h–76FFFFh 3B0000h–3B7FFFh
119 64/32 770000h–77FFFFh 3B8000h–3BFFFFh
120 64/32 780000h–78FFFFh 3C0000h–3C7FFFh
121 64/32 790000h–79FFFFh 3C8000h–3CFFFFh
Protection Group
122 64/32 7A0000h–7AFFFFh 3D0000h–3D7FFFh
123 64/32 7B0000h–7BFFFFh 3D8000h–3DFFFFh

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Table 21. Top Boot Block addresses, M29W640FT (continued)

Block KBytes/KWords Protection Block Group (x8) (x16)

124 64/32 7C0000h–7CFFFFh 3E0000h–3E7FFFh

125 64/32 7D0000h–7DFFFFh 3E8000h–3EFFFFh
126 64/32 7E0000h–7EFFFFh 3F0000h–3F7FFFh
127 8/4 7F0000h–7F1FFFh 3F8000h–3F8FFFh
128 8/4 7F2000h–7F3FFFh 3F9000h–3F9FFFh
129 8/4 Protection Group 7F4000h–7F5FFFh 3FA000h–3FAFFFh
130 8/4 7F6000h–7F7FFFh 3FB000h–3FBFFFh
131 8/4 7F8000h–7F9FFFh 3FC000h–3FCFFFh
132 8/4 7FA000h–7FBFFFh 3FD000h–3FDFFFh
133 8/4 7FC000h–7FDFFFh 3FE000h–3FEFFFh
134 8/4 7FE000h–7FFFFFh 3FF000h–3FFFFFh
1. Used as the Extended Block addresses in Extended Block mode.

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Table 22. Bottom Boot Block addresses, M29W640FB

Block KBytes/KWords Protection Block Group (x8) (x16)

0 8/4 000000h-001FFFh(1) 000000h–000FFFh(1)

1 8/4 002000h-003FFFh 001000h–001FFFh
2 8/4 004000h-005FFFh 002000h–002FFFh
3 8/4 006000h-007FFFh 003000h–003FFFh
4 8/4 008000h-009FFFh 004000h–004FFFh
5 8/4 Protection Group 00A000h-00BFFFh 005000h–005FFFh
6 8/4 00C000h-00DFFFh 006000h–006FFFh
7 8/4 00E000h-00FFFFh 007000h–007FFFh
8 64/32 010000h-01FFFFh 008000h–00FFFFh
9 64/32 020000h-02FFFFh 010000h–017FFFh
10 64/32 030000h-03FFFFh 018000h–01FFFFh
11 64/32 040000h-04FFFFh 020000h–027FFFh
12 64/32 050000h-05FFFFh 028000h–02FFFFh
Protection Group
13 64/32 060000h-06FFFFh 030000h–037FFFh
14 64/32 070000h-07FFFFh 038000h–03FFFFh
15 64/32 080000h-08FFFFh 040000h–047FFFh
16 64/32 090000h-09FFFFh 048000h–04FFFFh
Protection Group
17 64/32 0A0000h-0AFFFFh 050000h–057FFFh
18 64/32 0B0000h-0BFFFFh 058000h–05FFFFh
19 64/32 0C0000h-0CFFFFh 060000h–067FFFh
20 64/32 0D0000h-0DFFFFh 068000h–06FFFFh
Protection Group
21 64/32 0E0000h-0EFFFFh 070000h–077FFFh
22 64/32 0F0000h-0FFFFFh 078000h–07FFFFh
23 64/32 100000h-10FFFFh 080000h–087FFFh
24 64/32 110000h-11FFFFh 088000h–08FFFFh
Protection Group
25 64/32 120000h-12FFFFh 090000h–097FFFh
26 64/32 130000h-13FFFFh 098000h–09FFFFh
27 64/32 140000h-14FFFFh 0A0000h–0A7FFFh
28 64/32 150000h-15FFFFh 0A8000h–0AFFFFh
Protection Group
29 64/32 160000h-16FFFFh 0B0000h–0B7FFFh
30 64/32 170000h-17FFFFh 0B8000h–0BFFFFh
31 64/32 180000h-18FFFFh 0C0000h–0C7FFFh
32 64/32 190000h-19FFFFh 0C8000h–0CFFFFh
Protection Group
33 64/32 1A0000h-1AFFFFh 0D0000h–0D7FFFh
34 64/32 1B0000h-1BFFFFh 0D8000h–0DFFFFh

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Table 22. Bottom Boot Block addresses, M29W640FB (continued)

Block KBytes/KWords Protection Block Group (x8) (x16)

35 64/32 1C0000h-1CFFFFh 0E0000h–0E7FFFh

36 64/32 1D0000h-1DFFFFh 0E8000h–0EFFFFh
Protection Group
37 64/32 1E0000h-1EFFFFh 0F0000h–0F7FFFh
38 64/32 1F0000h-1FFFFFh 0F8000h–0FFFFFh
39 64/32 200000h-20FFFFh 100000h–107FFFh
40 64/32 210000h-21FFFFh 108000h–10FFFFh
Protection Group
41 64/32 220000h-22FFFFh 110000h–117FFFh
42 64/32 230000h-23FFFFh 118000h–11FFFFh
43 64/32 240000h-24FFFFh 120000h–127FFFh
44 64/32 250000h-25FFFFh 128000h–12FFFFh
Protection Group
45 64/32 260000h-26FFFFh 130000h–137FFFh
46 64/32 270000h-27FFFFh 138000h–13FFFFh
47 64/32 280000h-28FFFFh 140000h–147FFFh
48 64/32 290000h-29FFFFh 148000h–14FFFFh
Protection Group
49 64/32 2A0000h-2AFFFFh 150000h–157FFFh
50 64/32 2B0000h-2BFFFFh 158000h–15FFFFh
51 64/32 2C0000h-2CFFFFh 160000h–167FFFh
52 64/32 2D0000h-2DFFFFh 168000h–16FFFFh
Protection Group
53 64/32 2E0000h-2EFFFFh 170000h–177FFFh
54 64/32 2F0000h-2FFFFFh 178000h–17FFFFh
55 64/32 300000h-30FFFFh 180000h–187FFFh
56 64/32 310000h-31FFFFh 188000h–18FFFFh
Protection Group
57 64/32 320000h-32FFFFh 190000h–197FFFh
58 64/32 330000h-33FFFFh 198000h–19FFFFh
59 64/32 340000h-34FFFFh 1A0000h–1A7FFFh
60 64/32 350000h-35FFFFh 1A8000h–1AFFFFh
Protection Group
61 64/32 360000h-36FFFFh 1B0000h–1B7FFFh
62 64/32 370000h-37FFFFh 1B8000h–1BFFFFh
63 64/32 380000h-38FFFFh 1C0000h–1C7FFFh
64 64/32 390000h-39FFFFh 1C8000h–1CFFFFh
Protection Group
65 64/32 3A0000h-3AFFFFh 1D0000h–1D7FFFh
66 64/32 3B0000h-3BFFFFh 1D8000h–1DFFFFh

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Table 22. Bottom Boot Block addresses, M29W640FB (continued)

Block KBytes/KWords Protection Block Group (x8) (x16)

67 64/32 3C0000h-3CFFFFh 1E0000h–1E7FFFh

68 64/32 3D0000h-3DFFFFh 1E8000h–1EFFFFh
Protection Group
69 64/32 3E0000h-3EFFFFh 1F0000h–1F7FFFh
70 64/32 3F0000h-3FFFFFh 1F8000h–1FFFFFh
71 64/32 400000h-40FFFFh 200000h–207FFFh
72 64/32 410000h-41FFFFh 208000h–20FFFFh
Protection Group
73 64/32 420000h-42FFFFh 210000h–217FFFh
74 64/32 430000h-43FFFFh 218000h–21FFFFh
75 64/32 440000h-44FFFFh 220000h–227FFFh
76 64/32 450000h-45FFFFh 228000h–22FFFFh
Protection Group
77 64/32 460000h-46FFFFh 230000h–237FFFh
78 64/32 470000h-47FFFFh 238000h–23FFFFh
79 64/32 480000h-48FFFFh 240000h–247FFFh
80 64/32 490000h-49FFFFh 248000h–24FFFFh
Protection Group
81 64/32 4A0000h-4AFFFFh 250000h–257FFFh
82 64/32 4B0000h-4BFFFFh 258000h–25FFFFh
83 64/32 4C0000h-4CFFFFh 260000h–267FFFh
84 64/32 4D0000h-4DFFFFh 268000h–26FFFFh
Protection Group
85 64/32 4E0000h-4EFFFFh 270000h–277FFFh
86 64/32 4F0000h-4FFFFFh 278000h–27FFFFh
87 64/32 500000h-50FFFFh 280000h–287FFFh
88 64/32 510000h-51FFFFh 288000h–28FFFFh
Protection Group
89 64/32 520000h-52FFFFh 290000h–297FFFh
90 64/32 530000h-53FFFFh 298000h–29FFFFh
91 64/32 540000h-54FFFFh 2A0000h–2A7FFFh
92 64/32 550000h-55FFFFh 2A8000h–2AFFFFh
Protection Group
93 64/32 560000h-56FFFFh 2B0000h–2B7FFFh
94 64/32 570000h-57FFFFh 2B8000h–2BFFFFh
95 64/32 580000h-58FFFFh 2C0000h–2C7FFFh
96 64/32 590000h-59FFFFh 2C8000h–2CFFFFh
Protection Group
97 64/32 5A0000h-5AFFFFh 2D0000h–2D7FFFh
98 64/32 5B0000h-5BFFFFh 2D8000h–2DFFFFh

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M29W640FT, M29W640FB Block addresses

Table 22. Bottom Boot Block addresses, M29W640FB (continued)

Block KBytes/KWords Protection Block Group (x8) (x16)

99 64/32 5C0000h-5CFFFFh 2E0000h–2E7FFFh

100 64/32 5D0000h-5DFFFFh 2E8000h–2EFFFFh
Protection Group
101 64/32 5E0000h-5EFFFFh 2F0000h–2F7FFFh
102 64/32 5F0000h-5FFFFFh 2F8000h–2FFFFFh
103 64/32 600000h-60FFFFh 300000h–307FFFh
104 64/32 610000h-61FFFFh 308000h–30FFFFh
Protection Group
105 64/32 620000h-62FFFFh 310000h–317FFFh
106 64/32 630000h-63FFFFh 318000h–31FFFFh
107 64/32 640000h-64FFFFh 320000h–327FFFh
108 64/32 650000h-65FFFFh 328000h–32FFFFh
Protection Group
109 64/32 660000h-66FFFFh 330000h–337FFFh
110 64/32 670000h-67FFFFh 338000h–33FFFFh
111 64/32 680000h-68FFFFh 340000h–347FFFh
112 64/32 690000h-69FFFFh 348000h–34FFFFh
Protection Group
113 64/32 6A0000h-6AFFFFh 350000h–357FFFh
114 64/32 6B0000h-6BFFFFh 358000h–35FFFFh
115 64/32 6C0000h-6CFFFFh 360000h–367FFFh
116 64/32 6D0000h-6DFFFFh 368000h–36FFFFh
Protection Group
117 64/32 6E0000h-6EFFFFh 370000h–377FFFh
118 64/32 6F0000h-6FFFFFh 378000h–37FFFFh
119 64/32 700000h-70FFFFh 380000h–387FFFh
120 64/32 710000h-71FFFFh 388000h–38FFFFh
Protection Group
121 64/32 720000h-72FFFFh 390000h–397FFFh
122 64/32 730000h-73FFFFh 398000h–39FFFFh
123 64/32 740000h-74FFFFh 3A0000h–3A7FFFh
124 64/32 750000h-75FFFFh 3A8000h–3AFFFFh
Protection Group
125 64/32 760000h-76FFFFh 3B0000h–3B7FFFh
126 64/32 770000h-77FFFFh 3B8000h–3BFFFFh
127 64/32 780000h-78FFFFh 3C0000h–3C7FFFh
128 64/32 790000h-79FFFFh 3C8000h–3CFFFFh
Protection Group
129 64/32 7A0000h-7AFFFFh 3D0000h–3D7FFFh
130 64/32 7B0000h-7BFFFFh 3D8000h–3DFFFFh

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Table 22. Bottom Boot Block addresses, M29W640FB (continued)

Block KBytes/KWords Protection Block Group (x8) (x16)

131 64/32 7C0000h-7CFFFFh 3E0000h–3E7FFFh

132 64/32 7D0000h-7DFFFFh 3E8000h–3EFFFFh
Protection Group
133 64/32 7E0000h-7EFFFFh 3F0000h–3F7FFFh
134 64/32 7F0000h-7FFFFFh 3F8000h–3FFFFFh
1. Used as the Extended Block addresses in Extended Block mode.

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M29W640FT, M29W640FB Common Flash Interface (CFI)

Appendix B Common Flash Interface (CFI)

The Common Flash Interface is a JEDEC approved, standardized data structure that can be
read from the Flash memory device. It allows a system software to query the device to
determine various electrical and timing parameters, density information and functions
supported by the memory. The system can interface easily with the device, enabling the
software to upgrade itself when necessary.
When the CFI Query Command is issued the device enters CFI Query mode and the data
structure is read from the memory. Tables 23, 24, 25, 26, 27, and 28, show the addresses
used to retrieve the data.
The CFI data structure also contains a security area where a 64 bit unique security number
is written (see Table 28: Security Code Area). This area can be accessed only in Read
mode by the final user. It is impossible to change the security number after it has been
written by ST.

Table 23. Query structure overview(1)

Address
Sub-section name Description
x16 x8

10h 20h CFI Query Identification String Command set ID and algorithm data offset
1Bh 36h System Interface Information Device timing & voltage information
27h 4Eh Device Geometry Definition Flash device layout
Primary Algorithm-specific Extended Additional information specific to the
40h 80h
Query table Primary Algorithm (optional)
61h C2h Security Code Area 64 bit unique device number
1. Query data are always presented on the lowest order data outputs.

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Common Flash Interface (CFI) M29W640FT, M29W640FB

Table 24. CFI Query Identification String(1)

Address
Data Description Value
x16 x8

10h 20h 0051h “Q”

11h 22h 0052h Query Unique ASCII String "QRY" "R"
12h 24h 0059h "Y"
13h 26h 0002h Primary Algorithm Command Set and Control Interface ID code AMD
14h 28h 0000h 16 bit ID code defining a specific algorithm Compatible

15h 2Ah 0040h Address for Primary Algorithm extended Query table (see
P = 40h
16h 2Ch 0000h Table 27)
17h 2Eh 0000h Alternate Vendor Command Set and Control Interface ID Code
NA
18h 30h 0000h second vendor - specified algorithm supported
19h 32h 0000h
Address for Alternate Algorithm extended Query table NA
1Ah 34h 0000h
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.

Table 25. CFI Query System Interface Information

Address
Data Description Value
x16 x8

VCC Logic Supply Minimum Program/Erase voltage

1Bh 36h 0027h bit 7 to 4BCD value in volts 2.7V
bit 3 to 0BCD value in 100 mV
VCC Logic Supply Maximum Program/Erase voltage
1Ch 38h 0036h bit 7 to 4BCD value in volts 3.6V
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh 3Ah 00B5h bit 7 to 4HEX value in volts 11.5V
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh 3Ch 00C5h bit 7 to 4HEX value in volts 12.5V
bit 3 to 0BCD value in 100 mV
1Fh 3Eh 0004h Typical timeout per single byte/word program = 2n s 16 s
20h 40h 0000h Typical timeout for minimum size write buffer program = 2n s NA
n
21h 42h 000Ah Typical timeout per individual Block Erase = 2 ms 1s
n
22h 44h 0000h Typical timeout for full Chip Erase = 2 ms NA
n
23h 46h 0004h Maximum timeout for byte/word program = 2 times typical 256 s
24h 48h 0000h Maximum timeout for write buffer program = 2n times typical NA
25h 4Ah 0003h Maximum timeout per individual Block Erase = 2n times typical 8s
n
26h 4Ch 0000h Maximum timeout for Chip Erase = 2 times typical NA

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M29W640FT, M29W640FB Common Flash Interface (CFI)

Table 26. Device Geometry Definition(1)

Address
Data Description Value
x16 x8

27h 4Eh 0017h Device Size = 2n in number of bytes 8 MByte

28h 50h 0002h x8, x16
Flash Device Interface Code description
29h 52h 0000h Async.
2Ah 54h 0004h
Maximum number of bytes in multi-byte program or page = 2n 16 Bytes
2Bh 56h 0000h
Number of Erase Block Regions. It specifies the number of
2Ch 58h 0002h 2
regions containing contiguous Erase Blocks of the same size.
2Dh 5Ah 0007h Region 1 Information
8
2Eh 5Ch 0000h Number of Erase Blocks of identical size = 0007h+1
2Fh 5Eh 0020h Region 1 Information
8Kbyte
30h 60h 0000h Block size in Region 1 = 0020h * 256 byte
31h 62h 007Eh Region 2 Information
127
32h 64h 0000h Number of Erase Blocks of identical size= 007Eh+1
33h 66h 0000h Region 2 Information
64Kbyte
34h 68h 0001h Block size in Region 2 = 0100h * 256 byte
35h 6Ah 0000h Region 3 Information
36h 6Ch 0000h Number of Erase Blocks of identical size=007Fh+1 0
37h 6Eh 0000h Region 3 Information
38h 70h 0000h Block size in Region 3 = 0000h * 256 byte 0
39h 72h 0000h Region 4 Information
3Ah 74h 0000h Number of Erase Blocks of Identical size=007Fh+1 0
3Bh 76h 0000h Region 4 Information
3Ch 78h 0000h Block size in Region 4 = 0000h * 256 byte 0
1. For Bottom Boot devices, Erase Block Region 1 is located from address 000000h to 007FFFh and Erase
Block Region 2 from address 008000h to 3FFFFFh.
For Top Boot devices, Erase Block Region 1 is located from address 000000h to 3F7FFFh and Erase
Block Region 2 from address 3F8000h to 3FFFFFh.

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Common Flash Interface (CFI) M29W640FT, M29W640FB

Table 27. Primary Algorithm-specific Extended Query table

Address
Data Description Value
x16 x8

40h 80h 0050h "P"

Primary Algorithm extended Query table unique ASCII string
41h 82h 0052h "R"
“PRI”
42h 84h 0049h "I"
43h 86h 0031h Major version number, ASCII “1”
44h 88h 0033h Minor version number, ASCII "3"
Address Sensitive Unlock (bits 1 to 0)
45h 8Ah 0000h 00h = required, 01h = not required Yes
Silicon Revision Number (bits 7 to 2)
Erase Suspend
46h 8Ch 0002h 2
00h = not supported, 01h = Read only, 02 = Read and Write
Block Protection
47h 8Eh 0004h 4
00h = not supported, x = number of blocks per protection group
Temporary Block Unprotect
48h 90h 0001h Yes
00h = not supported, 01h = supported
Block Protect /Unprotect
49h 92h 0004h 04
04 = M29W640F
4Ah 94h 0000h Simultaneous Operations, 00h = not supported No
4Bh 96h 0000h Burst Mode: 00h = not supported, 01h = supported No
Page Mode: 00h = not supported, 01h = 4 page word, 02h = 8
4Ch 98h 0001h Yes
page word
VPP Supply Minimum Program/Erase voltage
4Dh 9Ah 00B5h bit 7 to 4 HEX value in volts 11.5V
bit 3 to 0 BCD value in 100 mV
VPP Supply Maximum Program/Erase voltage
4Eh 9Ch 00C5h bit 7 to 4 HEX value in volts 12.5V
bit 3 to 0 BCD value in 100 mV
Top/Bottom Boot Block Flag
4Fh 9Eh 0002h 02h = Bottom Boot device –
0003h 03h = Top Boot device
Program Suspend
Suppor
50h A0h 0001h 00h = Not Supported
ted
01h = Supported

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M29W640FT, M29W640FB Common Flash Interface (CFI)

Table 28. Security Code Area

Address
Data Description
x16 x8

61h C3h, C2h XXXX

62h C5h, C4h XXXX
64 bit: unique device number
63h C7h, C6h XXXX
64h C9h, C8h XXXX

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Extended Memory Block M29W640FT, M29W640FB

Appendix C Extended Memory Block

The M29W640F has an extra block, the Extended Block, that can be accessed using a
dedicated command.
This Extended Block is 128 Words in x16 mode and 256 Bytes in x8 mode. It is used as a
security block to provide a permanent security identification number) or to store additional
information.
The Extended Block is either Factory Locked or Customer Lockable, its status is indicated
by bit DQ7. This bit is permanently set to either ‘1’ or ‘0’ at the factory and cannot be
changed. When set to ‘1’, it indicates that the device is factory locked and the Extended
Block is protected. When set to ‘0’, it indicates that the device is customer lockable and the
Extended Block is unprotected. Bit DQ7 being permanently locked to either ‘1’ or ‘0’ is
another security feature which ensures that a customer lockable device cannot be used
instead of a factory locked one.
Bit DQ7 is the most significant bit in the Extended Block Verify Code and a specific
procedure must be followed to read it. See “Extended Memory Block Verify Code” in Table 4:
Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE = VIH, for details of how to
read bit DQ7.
The Extended Block can only be accessed when the device is in Extended Block mode. For
details of how the Extended Block mode is entered and exited, refer to the Section 4.3.1:
Enter Extended Block command and Section 4.3.2: Exit Extended Block command, and to
Table 6 and Table 7: Commands, 8-bit mode, BYTE = VIL.

C.1 Factory Locked Extended Block

In devices where the Extended Block is factory locked, the Security Identification Number is
written to the Extended Block address space (see Table 29: Extended Block address and
data) in the factory. The DQ7 bit is set to ‘1’ and the Extended Block cannot be unprotected.

C.2 Customer Lockable Extended Block

A device where the Extended Block is customer lockable is delivered with the DQ7 bit set to
‘0’ and the Extended Block unprotected. It is up to the customer to program and protect the
Extended Block but care must be taken because the protection of the Extended Block is not
reversible.
There are two ways of protecting the Extended Block:
Issue the Enter Extended Block command to place the device in Extended Block mode,
then use the In-System Technique with RP either at VIH or at VID (refer to Appendix D,
Section D.2: In-System technique and to the corresponding flowcharts, Figure 18 and
Figure 19, for a detailed explanation of the technique).
Issue the Enter Extended Block command to place the device in Extended Block mode,
then use the Programmer Technique (refer to Appendix D, Section D.1: Programmer
technique and to the corresponding flowcharts, Figure 16 and Figure 17, for a detailed
explanation of the technique).
Once the Extended Block is programmed and protected, the Exit Extended Block command
must be issued to exit the Extended Block mode and return the device to Read mode.

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M29W640FT, M29W640FB Extended Memory Block

Table 29. Extended Block address and data

Address Data

x8 x16 Factory Locked Customer Lockable

000000h-00007Fh 000000h-00003Fh Security Identification Number Determined by

000080h-0000FFh 000040h-00007Fh Unavailable customer

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Block protection M29W640FT, M29W640FB

Appendix D Block protection

Block protection can be used to prevent any operation from modifying the data stored in the
memory. The blocks are protected in groups, refer to Appendix A: Block addresses,
Table 21 and Table 22 for details of the Protection Groups. Once protected, Program and
Erase operations within the protected group fail to change the data.
There are three techniques that can be used to control Block Protection, these are the
Programmer technique, the In-System technique and Temporary Unprotection. Temporary
Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is
described in the Signal Descriptions section.

D.1 Programmer technique

The Programmer technique uses high (VID) voltage levels on some of the bus pins. These
cannot be achieved using a standard microprocessor bus, therefore the technique is
recommended only for use in Programming Equipment.
To protect a group of blocks follow the flowchart in Figure 16: Programmer Equipment
Group Protect flowchart. To unprotect the whole chip it is necessary to protect all of the
groups first, then all groups can be unprotected at the same time. To unprotect the chip
follow Figure 17: Programmer Equipment Chip Unprotect flowchart. Table 30: Programmer
technique bus operations, BYTE = VIH or VIL, gives a summary of each operation.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not abort the procedure before
reaching the end. Chip Unprotect can take several seconds and a user message should be
provided to show that the operation is progressing.

D.2 In-System technique

The In-System technique requires a high voltage level on the Reset/Blocks Temporary
Unprotect pin, RP(1). This can be achieved without violating the maximum ratings of the
components on the microprocessor bus, therefore this technique is suitable for use after the
memory has been fitted to the system.
To protect a group of blocks follow the flowchart in Figure 18: In-System Equipment Group
Protect flowchart. To unprotect the whole chip it is necessary to protect all of the groups first,
then all the groups can be unprotected at the same time. To unprotect the chip follow
Figure 19: In-System Equipment Chip Unprotect flowchart.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not allow the microprocessor to
service interrupts that will upset the timing and do not abort the procedure before reaching
the end. Chip Unprotect can take several seconds and a user message should be provided
to show that the operation is progressing.
Note: RP can be either at VIH or at VID when using the In-System Technique to protect the
Extended Block.

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M29W640FT, M29W640FB Block protection

Table 30. Programmer technique bus operations, BYTE = VIH or VIL

Address Inputs Data Inputs/Outputs
Operation E G W
A0-A21 DQ15A–1, DQ14-DQ0

Block (Group) A9 = VID, A12-A21 = Block address

VIL VID VIL Pulse X
Protect(1) Others = X
A9 = VID, A12 = VIH, A15 = VIH
Chip Unprotect VID VID VIL Pulse X
Others = X
A0, A2, A3 = VIL , A1 = VIH, A6 = VIL,
Block (Group) Pass = XX01h
VIL VIL VIH A9 = VID, A12-A21 = Block address
Protection Verify Retry = XX00h
Others = X
A0, A2, A3 = VIL, A1 = VIH, A6 = VIH,
Block (Group) Retry = XX01h
VIL VIL VIH A9 = VID, A12-A21 = Block address
Unprotection Verify Pass = XX00h
Others = X
1. Block Protection Groups are shown in Appendix A, Tables 21 and 22.

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Block protection M29W640FT, M29W640FB

Figure 16. Programmer Equipment Group Protect flowchart

1. Block Protection Groups are shown in Appendix A, Tables 21 and 22.

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M29W640FT, M29W640FB Block protection

Figure 17. Programmer Equipment Chip Unprotect flowchart

1. Block Protection Groups are shown in Appendix A, Tables 21 and 22.

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Block protection M29W640FT, M29W640FB

Figure 18. In-System Equipment Group Protect flowchart

1. Block Protection Groups are shown in Appendix A, Tables 21 and 22.

2. RP can be either at V IH or at VID when using the In-System Technique to protect the Extended Block.

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M29W640FT, M29W640FB Block protection

Figure 19. In-System Equipment Chip Unprotect flowchart

1. Block Protection Groups are shown in Appendix A, Tables 21 and 22.

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Revision history M29W640FT, M29W640FB

Revision history

Table 31. Document revision history

Date Revision Changes

01-Mar-2005 0.1 First Issue.

Asynchronous Page mode added.
17-May-2005 0.2
70ns speed class added.
Device codes modified.
TFBGA63 replaced by TFBGA48 6x8 package. ECOPACK text updated
Page size changed to 4 Word.
90ns speed class removed.
Quadruple Word/Octuple Byte Program command added.
07-Oct-2005 1.0 Table 4: Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE
= VIH: A0-A21 addresses for reading the Device Code, the Manufacturer
Code, the Extended Memory Block Verify Code, and the Block Protection
Status, have been updated.
Appendix D: Block protection: Table 30: Programmer technique bus
operations, BYTE = VIH or VIL: A0-A21 addresses updated for Block
Protection/Unprotection Verify using the Programmer technique.
Datasheet status changed to “Full Datasheet”.
60ns speed class added.
Program Suspend and Resume added.
02-Dec-2005 2
Section 2.8: VPP /Write Protect (VPP/WP) and Section 4.2: Fast Program
commands. Section 4: Command interface restructured.
Table 29: Extended Block address and data updated.
Double Byte Program commands added in Section 4: Command
interface.
15-Dec-2005 3 Table 4: Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE
= VIH.: A6 changed from VIH to VIL for Read Block Protection Status
operation.
DQ7 changed to DQ7 for Program, Program During Erase Suspend and
Program Error in Table 9: Status Register Bits.
A6 = V IL corrected to A6 = VIH during the Verify phase in Figure 17:
10-Mar-2006 4
Programmer Equipment Chip Unprotect flowchart.
Address ranges modified for x8 and x16 modes in Table 29: Extended
Block address and data.
Amended mistake in second title (M29W640FT changed to
23-Aug-2006 5 M29W640FB); removed the 4th cycle from the double byte program of
Table 7: Commands, 8-bit mode, BYTE = VIL
25-Oct-2006 6 Table 9: Status Register Bits updated.
10-Dec-2007 7 Applied Numonyx branding.
Added clarifications regarding VPPH when performing Fast Program
28-Aug-2008 8
commands.

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M29W640FT, M29W640FB

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