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SEMICONDUCTOR TECHNICAL DATA by MRF9120/D

The RF MOSFET Line

RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3
Designed for broadband commercial and industrial applications with frequen- MRF9120LR3
cies from 865 to 895 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA 880 MHz, 120 W, 26 V
IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 LATERAL N - CHANNEL
Output Power — 26 Watts RF POWER MOSFETs
Power Gain — 16 dB
Efficiency — 26%
Freescale Semiconductor, Inc.

Adjacent Channel Power —

750 kHz: - 45 dBc @ 30 kHz BW
1.98 MHz: - 60 dBc @ 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW)
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness CASE 375B - 04, STYLE 1
NI - 860
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS
Rating Symbol Value Unit
Drain - Source Voltage VDSS - 0.5, +65 Vdc
Gate - Source Voltage VGS - 0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C PD 250 W
Derate above 25°C 1.43 W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C

THERMAL CHARACTERISTICS
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case RθJC 0.45 °C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M1 (Minimum)

(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Rev. 7

MOTOROLA
 Motorola, RF DEVICE DATA
Inc. 2004 MRF9120R3 MRF9120LR3
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)

Zero Gate Voltage Drain Leakage Current IDSS — — 10 µAdc

(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 1 µAdc
(VDS = 26 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current IGSS — — 1 µAdc
(VGS = 5 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)
Gate Threshold Voltage VGS(th) 2 3 4 Vdc
(VDS = 10 Vdc, ID = 200 µAdc)
Gate Quiescent Voltage VGS(Q) — 3.8 — Vdc
(VDS = 26 Vdc, ID = 450 mAdc)
Freescale Semiconductor, Inc.

Drain - Source On - Voltage VDS(on) — 0.17 0.4 Vdc

(VGS = 10 Vdc, ID = 1.3 Adc)
Forward Transconductance gfs — 5.3 — S
(VDS = 10 Vdc, ID = 4 Adc)

DYNAMIC CHARACTERISTICS (1)

Output Capacitance Coss — 50 — pF
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Reverse Transfer Capacitance Crss — 2 — pF
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
(1) Each side of device measured separately.
(continued)

MRF9120R3 MRF9120LR3 MOTOROLA RF DEVICE DATA

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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Two - Tone Common - Source Amplifier Power Gain Gps 15 16.5 — dB
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two - Tone Drain Efficiency η 36 39 — %
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
3rd Order Intermodulation Distortion IMD — - 31 - 28 dBc
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Input Return Loss IRL — - 16 -9 dB
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Freescale Semiconductor, Inc.

Two - Tone Common - Source Amplifier Power Gain Gps — 16.5 — dB

(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Two - Tone Drain Efficiency η — 40.5 — %
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
3rd Order Intermodulation Distortion IMD — - 30 — dBc
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Input Return Loss IRL — - 13 — dB
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Power Output, 1 dB Compression Point P1dB — 120 — W
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f1 = 880.0 MHz)
Common - Source Amplifier Power Gain Gps — 16 — dB
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f1 = 880.0 MHz)
Drain Efficiency η — 51 — %
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f1 = 880.0 MHz)
Output Mismatch Stress Ψ
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, No Degradation In Output Power
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(2) Device measured in push - pull configuration.

MOTOROLA RF DEVICE DATA MRF9120R3 MRF9120LR3

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B6
B3 B4 VDD
C21 + + +
VGG
+ C10 C25 C26 C27

C30
L1
C11
Balun 1 R1
C8
Z16 Z18 Z20 Z22 C19
Z24
RF Z2 Z4 Z6 Z8 Z10 Z12 Z14 RF
INPUT OUTPUT
Z1 C2 Z26 Z27
DUT
C1 C3 C4 C5 C6 C13 C14 C15 C16 C17

Z3 Z5 Z7 Z9 Z11 Z13 Z15 C20

Freescale Semiconductor, Inc.

Z25
C7 Z17 Z19 Z21 Z23 C18
R2 C12 Balun 2

C9 L2
B1 B2 C22
VGG
+ B5
VDD
C29 + + +

C23 C24 C28

Z1 0.420″ x 0.080″ Microstrip Z14, Z15 0.040″ x 0.630″ Microstrip

Z2, Z3 0.090″ x 0.420″ Microstrip Z16, Z17 0.040″ x 0.630″ Microstrip
Z4, Z5 0.125″ x 0.220″ Microstrip Z18, Z19 0.330″ x 0.630″ Microstrip
Z6, Z7 0.095″ x 0.220″ Microstrip Z20, Z21 0.450″ x 0.630″ Microstrip
Z8, Z9 0.600″ x 0.220″ Microstrip Z22, Z23 0.750″ x 0.220″ Microstrip
Z10, Z11 0.200″ x 0.630″ Microstrip Z24, Z25 0.115″ x 0.420″ Microstrip
Z12, Z13 0.500″ x 0.630″ Microstrip Z26 0.130″ x 0.080″ Microstrip
Z27 0.350″ x 0.080″ Microstrip

Figure 1. 880 MHz Broadband Test Circuit Schematic

MRF9120R3 MRF9120LR3 MOTOROLA RF DEVICE DATA

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Table 1. 880 MHz Broadband Test Circuit Component Designations and Values
Part Description Value, P/N or DWG Manufacturer
B1, B3, B5, B6 Long Ferrite Beads, Surface Mount 95F787 Newark
B2, B4 Short Ferrite Beads, Surface Mount 95F786 Newark
C1, C2 68 pF Chip Capacitors, B Case 100B680JP500X ATC
C3, C6 0.8 - 8.0 pF Variable Capacitors 44F3360 Newark
C4 7.5 pF Chip Capacitor, B Case 100B7R5JP150X ATC
C5 3.3 pF Chip Capacitor, B Case 100B3R3CP150X ATC
C7, C8 11 pF Chip Capacitors, B Case 100B110BCA500X ATC
C9, C10, C21, C22 51 pF Chip Capacitors, B Case 100B510JP500X ATC
C11, C12 6.2 pF Chip Capacitors, B Case 100B6R2BCA150X ATC
C13 4.7 pF Chip Capacitor, B Case 100B4R7BCA150X ATC
C14 5.1 pF Chip Capacitor, B Case 100B5R1BCA150X ATC
C15 3.0 pF Chip Capacitor, B Case 100B2R7BCA150X ATC
Freescale Semiconductor, Inc.

C16 2.7 pF Chip Capacitor, B Case 100B3R0BCA150X ATC

C17 0.6 - 4.5 pF Variable Capacitor 44F3358 Newark
C18, C19 47 pF Chip Capacitors, B Case 100B470JP500X ATC
C20 0.4 - 2.5 pF Variable Capacitor 44F3367 Newark
C29, C30 10 µF, 35 V Tantalum Chip Capacitors 93F2975 Newark
C23, C24, C25, C26 22 µF, 35 V Tantalum Chip Capacitors 92F1853 Newark
C27, C28 220 µF, 50 V Electrolytic Capacitors 14F185 Newark
Balun 1, Balun 2 Xinger Surface Mount Balun Transformers 3A412 Anaren
L1, L2 12.5 nH Mini Spring Inductors A04T - 5 Coilcraft
R1, R2 510 Ω, 1/4 W Chip Resistors Garret
WB1, WB2, WB3, WB4 10 mil Brass Wear Blocks
Board Material 30 mil Glass Teflon, εr = 2.55 Copper Clad, 2 oz Cu 900 MHz Push - Pull Rev 01B CMR
PCB Etched Circuit Board 900 MHz Push - Pull Rev 01B CMR

VGG MRF9120
C30 B3 B4 900 MHz B6 C27 VDD
PUSH PULL
Rev 01B

C25 C26
C10
C21

Balun1 C8 C11 L1 Balun2

R1
WB1

WB3
CUTOUT AREA

C2 C19
C3 C17
C5
INPUT OUTPUT
C4 C13−C15 C16
WB2

WB4

C1 C6 C18 C20

R2 C7 C12 L2

C9 C22
C23 C24

VGG C29 B1 B2 B5 C28 VDD

Figure 2. 865 - 895 MHz Broadband Test Circuit Component Layout

MOTOROLA RF DEVICE DATA MRF9120R3 MRF9120LR3

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TYPICAL CHARACTERISTICS

18 50

EFFICIENCY (%)
Gps

h , DRAIN
17 45

16 η 40

G ps , POWER GAIN (dB)

VDD = 26 Vdc
15 Pout = 120 W (PEP) 35

IRL, INPUT RETURN LOSS (dB)

IDQ = 2 x 500 mA

IMD, INTERMODULATION
14 −30 −10
Tone Spacing = 100 kHz

DISTORTION (dBc)
13 IMD −32 −12

12 IRL −34 −14

11 −36 −16

10 −38 −18
860 865 870 875 880 885 890 895 900
Freescale Semiconductor, Inc.

f, FREQUENCY (MHz)

Figure 3. Class AB Broadband Circuit Performance

18 −10

IMD, INTERMODULATION DISTORTION (dBc)

VDD = 26 Vdc
1500 mA f1 = 880.0 MHz
17.5
−20 f2 = 880.1 MHz
G ps , POWER GAIN (dB)

1200 mA
17
−30
16.5 1000 mA
800 mA
−40
1000 mA
16 800 mA

15.5 VDD = 26 Vdc −50

f1 = 880.0 MHz 1200 mA
f2 = 880.1 MHz 1500 mA
15 −60
1 10 100 1 10 100
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP

Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)

−10 18 60
VDD = 26 Vdc
−20 IDQ = 2 x 500 mA 16 Gps 50
f1 = 880.0 MHz
f2 = 880.1 MHz
Gps, POWER GAIN (dB)

h, DRAIN EFFICIENCY (%)

−30 14 40

−40 12 30
3rd Order
−50 10 20
5th Order
η VDD = 26 Vdc
−60 7th Order 8 IDQ = 2 x 500 mA 10
f = 880 MHz
−70 6 0
1 10 100 1000 1 10 100
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG.

Figure 6. Intermodulation Distortion Products Figure 7. Power Gain and Efficiency versus
versus Output Power Output Power

MRF9120R3 MRF9120LR3 MOTOROLA RF DEVICE DATA

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TYPICAL CHARACTERISTICS

IMD, INTERMODULATION DISTORTION (dBc)

18 60
Gps
16 40

h, DRAIN EFFICIENCY (%)

G ps , POWER GAIN (dB)
14 20
η
12 0
VDD = 26 Vdc
IDQ = 2 x 500 mA
10 f1 = 880.0 MHz −20
f2 = 880.1 MHz
8 −40
IMD
6 −60
1 10 100
Freescale Semiconductor, Inc.

Pout, OUTPUT POWER (WATTS) PEP

Figure 8. Power Gain, Efficiency and IMD versus

Output Power

ACPR, ADJACENT CHANNEL POWER RATIO (dB)

18 40
Gps
16 20

h, DRAIN EFFICIENCY (%)

η
G ps , POWER GAIN (dB)

14 VDD = 26 Vdc 0
IDQ = 2 x 500 mA
12 f = 880 MHz −20
IS−97, Pilot, Sync, Paging
Traffic Codes 8 through 13
10 −40
750 kHz
8 −60
1.98 MHz
6 −80
0.1 1 10 100

Pout, OUTPUT POWER (WATTS) AVG.

Figure 9. Power Gain, Efficiency and ACPR

versus Output Power

MOTOROLA RF DEVICE DATA MRF9120R3 MRF9120LR3

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Zo = 5 Ω

f = 895 MHz Zload

f = 865 MHz
f = 865 MHz
Zsource

f = 895 MHz
Freescale Semiconductor, Inc.

VDD = 26 V, IDQ = 2 × 500 mA, Pout = 120 W PEP

f Zsource Zload
MHz Ω Ω

865 4.89 - j0.2 4.9 - j0.5

880 4.54 + j0.07 4.6 - j0.32

895 3.29 - j1.3 4.2 - j0.04

Zsource = Test circuit impedance as measured from

gate to gate, balanced configuration.

Zload = Test circuit impedance as measured

from drain to drain, balanced configuration.

Input Device Output

Matching + Under − Matching
Network Test Network

− +
Z Z
source load

Figure 10. Series Equivalent Input and Output Impedance

MRF9120R3 MRF9120LR3 MOTOROLA RF DEVICE DATA

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NOTES
Freescale Semiconductor, Inc.

MOTOROLA RF DEVICE DATA MRF9120R3 MRF9120LR3

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NOTES
Freescale Semiconductor, Inc.

MRF9120R3 MRF9120LR3 MOTOROLA RF DEVICE DATA

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NOTES
Freescale Semiconductor, Inc.

MOTOROLA RF DEVICE DATA MRF9120R3 MRF9120LR3

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PACKAGE DIMENSIONS

2X Q
A A bbb M T A M B M
NOTES:
G 4 1. INTERPRET DIMENSIONS AND TOLERANCES
B PER ASME Y14.5M−1994.
L 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
1 2 FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.140 (28.96) BASED ON M3 SCREW.
B (FLANGE) INCHES MILLIMETERS
DIM MIN MAX MIN MAX
5 A 1.335 1.345 33.91 34.16
3 4 B 0.380 0.390 9.65 9.91
C 0.180 0.224 4.57 5.69
D 0.325 0.335 8.26 8.51
4X K
4X D E 0.060 0.070 1.52 1.78
F 0.004 0.006 0.10 0.15
bbb M T A M B M G 1.100 BSC 27.94 BSC
H 0.097 0.107 2.46 2.72
ccc M T A M B M K 0.085 0.115 2.16 2.92
Freescale Semiconductor, Inc.

L 0.425 BSC 10.80 BSC

R M 0.852 0.868 21.64 22.05
ccc M T A M B M (LID) F N 0.851 0.869 21.62 22.07
H
N C
Q 0.118 0.138 3.00 3.51
E (LID) R 0.395 0.405 10.03 10.29
S 0.394 0.406 10.01 10.31
bbb 0.010 REF 0.25 REF
S ccc 0.015 REF 0.38 REF
(INSULATOR)
STYLE 1:
M bbb M T A M B M
PIN 1. DRAIN
PIN 5 (INSULATOR)
T 2. DRAIN
3. GATE
bbb M T A M B M SEATING
4. GATE
PLANE
5. SOURCE

CASE 375B - 04
ISSUE E
NI - 860

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data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
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E Motorola Inc. 2004

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