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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com

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Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.

HA17458 Series
Dual Operational Amplifier

ADE-204-040 (Z) Rev. 0 Dec. 2000 Description

HA17458 is dual operational amplifiers which provides internal phase compensation and high performance. It can be applied widely to measuring control equipment and to general use.

Features
High voltage gain: 100dB (Typ) Wide output amplitude: 13V (Typ) [at RL 2k] Protected from output shortcircuit Internal phase compensation

Ordering Information
Type No. HA17485FP HA17458F HA17458 HA17458PS Application Industrial use Commercial use Commercial use Industrial use Package FP-8D FP-8D DP-8 DP-8

HA17458 Series
Pin Arrangement

Vout1 1 Vin()1 2 Vin(+)1 3 VEE 4 + 1 + 2

8 VCC 7 Vout2 6 Vin()2 5 Vin(+)2

(Top View)

Circuit Schematic (1/2)

VCC

Vin(+) Vin()

Vout to VEE to VCC to VCC

VEE

HA17458 Series
Absolute Maximum Ratings (Ta = 25C)
Ratings Item Supply voltage Symbol VCC VEE Intput voltage Differential input voltage Power dissipation Operating temperature Storage temperature VIN*
3

HA17458

HA17458PS

HA17458F

HA17458FP

Unit V V V V

+18 18 15 30 670*
1

+18 18 15 30 670*
1

+18 18 15 30 385*
2

+18 18 15 30 385*
2

VIN(diff) PT Topr Tstg

mW C C

20 to +75 55 to +125

20 to +75 55 to +125

20 to +75 55 to +125

20 to +75 55 to +125

Notes: 1. These are the allowable values up to Ta = 45 C. Derate by 8.3mW/C above that temperature. 2. These are the allowable values up to Ta = 31 C mounting on 30% wiring density glass epoxy board. Derate by 7.14mW/C above that temperature. 3. If the supply voltage is less than 15V, input voltage should be less than supply voltage.

HA17458 Series
Electrical Characteristics 1 (VCC = VEE = 15V, Ta = 25C)
Item Input offset voltage Input offset current Input bias current Line regulation Symbol VIO I IO I IB VIO/VCC VIO/VEE Voltage gain Common mode rejection ratio Common mode input voltage range Peak-to-peak output voltage Power dissipation Slew rate Input resistance Input capacitance Output resistance AVD CMR VCM Vop-p Pd SR Rin Cin Rout Min 86 70 12 12 0.3 Typ 2.0 6 30 30 30 100 90 13 14 90 0.6 1.0 6.0 75 Max 6.0 200 500 150 150 200 Unit mV nA nA V/V V/V dB dB V V mW V/s M pF RL = 10k No load, 2 channel AVD = 1 RS 10k RS 10k RL 2k, Vout = 10V RS 10k Test conditions RS 10k

Electrical Characteristics 2 (VCC = VEE = 15V, Ta = 20 to +75C)

Item Input offset voltage Input offset current Input bias current Voltage gain Peak-to-peak output voltage Symbol VIO I IO I IB AVD Vop-p Min 80 10 Typ 13 Max 9.0 400 1100 Unit mV nA nA dB V RL 2k, Vout = 10V RL = 2k Test conditions RS 10k

HA17458 Series
Characteristic Curves
Input Offset Voltage vs. Ambient Temperature 5 Input Offset Voltage VIO (mV) Input Bias Current IIB (nA) VCC = + 15 V VEE = 15 V < RS = 10 k VCC = + 15 V VEE = 15 V 80 100 Input Bias Current vs. Ambient Temperature

60

40

20

0 20 0 Ambient Temperature Ta (C) Ambient Temperature Ta (C) 20 40 60 80 0 20 40 60

0 20

80

Input Offset Current vs. Ambient Temperature 20 Input Offset Current IIO (nA) Power Dissipation Pd (mW) VCC = + 15 V VEE = 15 V 16 200

Power Dissipation vs. Ambient Temperature VCC = + 15 V VEE = 15 V No Load Both Amplifiers

12

100

0 20 0 20 40 60

80

0 20

20

40

60 Ambient Temperature Ta (C)

80

Ambient Temperature Ta (C)

HA17458 Series
Voltage Gain vs. Ambient Temperature 120 Output Short Current IOS (mA) VCC = + 15 V VEE = 15 V RL = 2 k 40 VCC = + 15 V VEE = 15 V VOP-P = 0 V 50 Output Short Current vs. Ambient Temperature

Voltage Gain AVD (dB) 100 30 Source 20 Sink 10 90 80 70 20 0 0 Ambient Temperature Ta (C) 20 40 60 80 Ambient Temperature Ta (C) 20 40 60 80

110

0 20

200 20 Power Dissipation Pd (mW) Ta = 25C No Load Both Amplifiers 16 12

Maximum Output Voltage Swing VOP-P (V)

Power Dissipation vs. Supply Voltage

Maximum Output Voltage Swing vs. Supply Voltage Ta = 25C RL = 2 k

150

100 8

+V

OP

-P OP -P

V
4

50

0 3 6 9 12 15 Supply Voltage VCC, VEE (V)

18

0 3

6 9 12 15 Supply Voltage VCC, VEE (V)

18

HA17458 Series
Voltage Gain vs. Frequency 120 VCC = +15 V VEE = 15 V Ta = 25C RL = 2 k

100 Voltage Gain AVD (dB) 80 60 40 20 0 10 30 100 300 1k 3 k 10 k Frequency (Hz) 30 k 100 k 300 k 1M

Phase Angle vs. Frequency

VCC = +15 V VEE = 15 V Ta = 25C RL = 2 k

40 Phase Angle (deg) 80 120 160 100 300 1k 3k 10 k 30 k Frequency (Hz) 100 k 300 k 1M 3M

HA17458 Series
Maximum Output Voltage Swing vs. Frequency Maximum Output Voltage Swing Vop-p (V) VCC = +15 V VEE = 15 V Ta = 25C RL = 10 k 12 8 4 0 4 8 12 16 200 500 1k 5k 10k Load Resistance RL () VCC = +15 V VEE = 15 V Ta = 25C Maximum Output Voltage Swing Vop-p (V) 28 24 20 16 12 8 4 0 16 Maximum Output Voltage Swing vs. Load Resistance

100
500 1k 5k 10k 50k 100k Frequency f (Hz) 500k

Voltage Follower Large Signal Pulse Response 10 Input and Output Voltage (V) VCC = +15 V VEE = 15 V RL = 2 k CL = 100 pF Ta = 25C

Output 0

Input

10 0 20 40 60 Time (s) 80

HA17458 Series
Package Dimensions
Unit: mm
9.6 10.6 Max 8 5
6.3 7.4 Max

1 0.89

4 1.3
2.54 Min 5.06 Max

1.27 Max

7.62

0.1 Min

0.25 0.05 0 15
Hitachi Code JEDEC EIAJ Mass (reference value)

+ 0.10

2.54 0.25

0.48 0.10

DP-8 Conforms Conforms 0.54 g

Unit: mm
4.85 5.25 Max 5 8
4.4

4
*0.22 0.05 0.20 0.04 2.03 Max

0.75 Max

0.25 6.50 + 0.15

1.05 0 8

0.10 0.10

1.27 *0.42 0.08 0.40 0.06

0.25 0.60 + 0.18

0.15 0.12 M
*Dimension including the plating thickness Base material dimension Hitachi Code JEDEC EIAJ Mass (reference value) FP-8D Conforms 0.10 g

HA17458 Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica Europe Asia Japan

: : : :

http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk

For further information write to:

Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160

Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.

Colophon 2.0

10

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