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Spin Tronic S

Spintronics uses electron spin in materials to develop new devices, addressing limitations of conventional memory like volatility and heat dissipation. One application is MRAM, which uses electron spin states to encode data non-volatily in magnetic tunnel junctions. MRAM offers faster speeds and higher densities than flash memory. Further research aims to manipulate electron spins with voltages instead of currents and use laser detection of magnetic fields. Spintronics could enable smaller, more versatile chips than silicon and memories combining advantages of different memory types.

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Manish Kumar
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72 views16 pages

Spin Tronic S

Spintronics uses electron spin in materials to develop new devices, addressing limitations of conventional memory like volatility and heat dissipation. One application is MRAM, which uses electron spin states to encode data non-volatily in magnetic tunnel junctions. MRAM offers faster speeds and higher densities than flash memory. Further research aims to manipulate electron spins with voltages instead of currents and use laser detection of magnetic fields. Spintronics could enable smaller, more versatile chips than silicon and memories combining advantages of different memory types.

Uploaded by

Manish Kumar
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPT, PDF, TXT or read online on Scribd
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A QUANTUM LEAP

PRESENTED BY:
RAVINDER 108080

WHAT DOES IT MEAN ?


Spintronics, short for spin electronics, is the study of electron spin in materials in order to better understand its behavior, and possible devices that specifically exploit spin properties.

WHY DO WE NEED SPINTRONICS?

To further enhance the speed Diminishing size of memory cells

Further compaction in the size of ICs (below 100nm)


To avoid the unnecessary dissipation of heat Requirement for a non-volatile magnetic memory

SPIN OF AN ELECTRON

Circulating charges on the sphere amount to tiny loops of electric current, which create a magnetic field similar to the earth's magnetic field.

LIMITATION OF CONVENTIONAL MEMORY


Conventional main memory is volatile
Considerable amount of energy dissipation Relies totally on the flow of current in the R/W head Adjacent memory cells may interfere with each other

Current in the head is irrespective of the spin of electrons

MAGNETIC MEMORY(MRAM)

FEATURES OF MRAM
MRAM uses electron spins to encode data. Cell densities comparable to those of Flash Memory Non- volatile memory and hence retain the information put into it.

About 1000 times speed over the permanent memories of Flash type that are used today for mobile electronics. Each cell is a submicronic MTJ (Magnetic tunnel junction) and the states 0and 1of the cell corresponds respectively to the parallel and antiparallel configurations of the magnetic moments of electrodes of the MTJ

CONVENTIONAL MEMORY Dynamic ICs


Bits are stored as charges Volatile

MRAM
Ferromagnetic material Bits are stored as magnetic moment Non-Volatile

Sensor current is not spin specific More space to store a bit

Sensor current is electron spin specific Less space to store a bit

HOW THE R/W HEAD READS THE INFORMATION ON THE BIT CELL?
The disc drive spins underneath the header

The magnetization of the bit cell alters the current


flowing through the read head The current flows for a binary 0 and an ideal reader has infinite resistance for binary 1 The greater the change in resistance of the head for the two binary values greater is the sensitivity of the read head

GIANT MAGNETORESISTANCE

ELECTRONS

ELECTRONS

RESISTANCE WORKS
MAGNETIC NON MAGNETIC MAGNETIC

THE GMR EFFECT (HOW IT WORKS)

GMR READER

HOW GIANT MAGNETORESISTANCE (GMR) IS BETTER THAN THE CONVENTIONAL DISK READER?
It results from electron-spin effects in ultra-thin 'multilayers' of magnetic materials, which cause huge changes in their electrical resistance when a magnetic field is applied.

GMR is 200 times stronger than ordinary magnetoresistance.


Read heads incorporating GMR materials would be able to sense much smaller magnetic fields, allowing the storage capacity of a hard disk to increase greatly.

WHY SPINTRONICS IS BETTERTHAN CONVENTIONAL ELECTRONICS?


It could be used to make more smaller, more versatile and more robust chips than those currently making up silicon chips and circuit elements.
No constant voltage is required to remember the states of the data because of the nonvolatile property of spintronic devices.

MRAM developed through spintronics has the potential to combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash.

CHALLENGES FACED IN THE DEVELOPMENT OF SPINTRONIC DEVICES


Currently flipping the spins up or down is being done by running current pulses through wires to induce magnetic fields because the fringe fields generated could interfere with neighboring elements. Now attempts are being made to manipulate the spins of the electrons by the application of voltage in spite of current.

FURTHER RESEARCH IN THE FIELD OF SPINTRONICS


Ohio State University researchers have made nearly all the moving electrons inside a sample of plastic spin in the same direction an effect called spin polarisation that could yield plastic memories.

Laser technology is being used in place of the current variation in the reader head to detect the presence of the magnetic field in the memory cell. The magnetization of the bit cell is measured by the deviation in the laser beam

CONCLUSIONS

Spintronics is heralding a new era of computer IC chips, memory units and transistors. With the advent of this new technology the diminishing size of the chips is not any problem so far. Although the research in this field is not yet complete but spintronics holds a great promise for the forthcoming computer devices.

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