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    Junction Field Effect Transistor

    Uploaded by

    santhosh
    This document discusses Junction Field Effect Transistors (JFETs). It begins by introducing FETs and comparing them to Bipolar Junction Transistors (BJTs). FETs are voltage-controlled, while BJTs are current-controlled. The document then discusses the two types of JFETs - n-channel and p-channel JFETs. It provides details on their structure, operation, symbols and characteristics curves showing how drain current (ID) varies with drain-source voltage (VDS) and gate-source voltage (VGS). Key advantages of JFETs over BJTs include higher input impedance, better temperature stability, smaller size and lower noise.

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    © All Rights Reserved
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    Junction Field Effect Transistor

    Uploaded by

    santhosh
    81 views27 pages
    This document discusses Junction Field Effect Transistors (JFETs). It begins by introducing FETs and comparing them to Bipolar Junction Transistors (BJTs). FETs are voltage-controlled, while BJTs are current-controlled. The document then discusses the two types of JFETs - n-channel and p-channel JFETs. It provides details on their structure, operation, symbols and characteristics curves showing how drain current (ID) varies with drain-source voltage (VDS) and gate-source voltage (VGS). Key advantages of JFETs over BJTs include higher input impedance, better temperature stability, smaller size and lower noise.

    Original Description:

    JFET Introduction

    Original Title

    jfet

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    This document discusses Junction Field Effect Transistors (JFETs). It begins by introducing FETs and comparing them to Bipolar Junction Transistors (BJTs). FETs are voltage-controlled, while BJTs are current-controlled. The document then discusses the two types of JFETs - n-channel and p-channel JFETs. It provides details on their structure, operation, symbols and characteristics curves showing how drain current (ID) varies with drain-source voltage (VDS) and gate-source voltage (VGS). Key advantages of JFETs over BJTs include higher input impedance, better temperature stability, smaller size and lower noise.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    81 views27 pages

    Junction Field Effect Transistor

    Uploaded by

    santhosh
    This document discusses Junction Field Effect Transistors (JFETs). It begins by introducing FETs and comparing them to Bipolar Junction Transistors (BJTs). FETs are voltage-controlled, while BJTs are current-controlled. The document then discusses the two types of JFETs - n-channel and p-channel JFETs. It provides details on their structure, operation, symbols and characteristics curves showing how drain current (ID) varies with drain-source voltage (VDS) and gate-source voltage (VGS). Key advantages of JFETs over BJTs include higher input impedance, better temperature stability, smaller size and lower noise.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 27

    JFET

    Junction Field Effect Transistor

    Introduction (FET)
    Field-effect transistor (FET) are important
    devices such as BJTs
    Also used as amplifier and logic switches
    What is the difference between JFET and
    BJT?

    BJT is Current-controlled

    FET is Voltage-controlled

    Types of Field Effect Transistors


    (The Classification)

    JFET

    FET

    n-Channel JFET
    p-Channel JFET

    MOSFET (IGFET)

    Enhancement
    MOSFET
    n-Channel
    EMOSFET

    p-Channel
    EMOSFET

    Depletion
    MOSFET
    n-Channel
    DMOSFET

    p-Channel
    DMOSFET

    Introduction.. (Advantages of FET


    over BJT)
    High input impedance (M)
    (Linear AC amplifier system)
    Temperature stable than BJT
    Smaller than BJT
    Can be fabricated with fewer processing
    BJT is bipolar conduction both hole and electron
    FET is unipolar uses only one type of current
    carrier
    Less noise compare to BJT
    Usually use as an Amplifier and logic switch

    Disadvantages of FET
    Easy to damage compare to BJT

    Junction field-effect transistor..


    There are 2 types of JFET
    n-channel JFET
    p-channel JFET

    Three Terminal
    Drain D
    Gate -G
    Source S

    SYMBOLS
    Drain

    Drain

    Gate

    Gate

    Source
    n-channel JFET

    Source
    p-channel JFET

    N-channel JFET
    N channel JFET:
    Major structure is n-type material (channel)
    between embedded p-type material to form 2 pn junction.
    In the normal operation of an n-channel device,
    the Drain (D) is positive with respect to the
    Source (S). Current flows into the Drain (D),
    through the channel, and out of the Source (S)
    Because the resistance of the channel depends
    on the gate-to-source voltage (VGS), the drain
    current (ID) is controlled by that voltage

    N-channel JFET..

    P-channel JFET
    P channel JFET:
    Major structure is p-type material
    (channel) between embedded n-type
    material to form 2 p-n junction.
    Current flow : from Source (S) to Drain
    (D)
    Holes injected to Source (S) through ptype channel and flowed to Drain (D)

    P-channel JFET..

    Water analogy for the JFET control


    mechanism

    JFET Characteristic for VGS = 0 V and 0<VDS<|Vp|


    To start, suppose VGS=0
    Then, when VDS is increased, ID increases.
    Therefore, ID is proportional to VDS for small values
    of VDS
    For larger value of VDS, as VDS increases, the
    depletion layer become wider, causing the
    resistance of channel increases.
    After the pinch-off voltage (Vp) is reached, the ID
    becomes nearly constant (called as ID maximum,
    IDSS-Drain to Source current with Gate Shorted)

    JFET for VGS = 0 V and 0<VDS<|Vp|

    Channel
    becomes
    narrower as
    VDS is
    increased

    Pinch-off (VGS = 0 V, VDS = VP).

    ID versus VDS

    for VGS = 0 V and 0<VDS<|Vp|

    JFET Characteristic Curve

    JFET for
    (Application of a negative voltage to the gate of a JFET

    JFET Characteristic Curve..


    For negative values of VGS, the gate-to-channel
    junction is reverse biased even with VDS=0
    Thus, the initial channel resistance of channel is
    higher.
    The resistance value is under the control of VGS
    If VGS = pinch-off voltage(VP)
    The device is in cutoff (VGS=VGS(off) = VP)
    The region where ID constant The saturation/pinchoff region
    The region where ID depends on VDS is called the
    linear/ohmic region

    Drain Characteristics for nchannel JFET

    Transfer Characteristics..
    In JFET, the relationship between VGS (input
    voltage) and ID (output current) is used to
    define the transfer characteristics. It is called
    as Shockleys Equation:

    VGS
    ID = IDSS 1
    VP

    VP=VGS (OFF)

    The relationship is more complicated (and not


    linear)
    As a result, FETs are often referred to a
    square law devices

    Transfer Characteristics
    Defined by Shockleys equation:

    V
    GS

    I D I DSS 1

    V
    GS
    (
    off
    )

    VP VGS ( off )

    Relationship between ID and VGS.


    Obtaining transfer characteristic curve axis
    point from Shockley:
    When VGS = 0 V, ID = IDSS
    When VGS = VGS(off) or Vp, ID = 0 mA

    Transfer Characteristics

    JFET Transfer Characteristic Curve

    JFET Characteristic Curve

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