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    Electronics 1: Ahsan Khawaja

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    Raja Uzair Saeed
    1) Electron mobility characterizes how quickly electrons can move through a material when pulled by an electric field, and there is an analogous quantity for holes called hole mobility. 2) In the absence of an electric field, electrons move randomly via Brownian motion. When a field is applied, electrons and holes drift with an average velocity proportional to the electric field. 3) The drift velocity increases linearly with electric field until saturated drift velocities are reached. Conductivity and resistivity describe how easily current flows through a material.

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    Electronics 1: Ahsan Khawaja

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    Raja Uzair Saeed
    57 views17 pages
    1) Electron mobility characterizes how quickly electrons can move through a material when pulled by an electric field, and there is an analogous quantity for holes called hole mobility. 2) In the absence of an electric field, electrons move randomly via Brownian motion. When a field is applied, electrons and holes drift with an average velocity proportional to the electric field. 3) The drift velocity increases linearly with electric field until saturated drift velocities are reached. Conductivity and resistivity describe how easily current flows through a material.

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    Electronics

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    1) Electron mobility characterizes how quickly electrons can move through a material when pulled by an electric field, and there is an analogous quantity for holes called hole mobility. 2) In the absence of an electric field, electrons move randomly via Brownian motion. When a field is applied, electrons and holes drift with an average velocity proportional to the electric field. 3) The drift velocity increases linearly with electric field until saturated drift velocities are reached. Conductivity and resistivity describe how easily current flows through a material.

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    Download as ppt, pdf, or txt
    57 views17 pages

    Electronics 1: Ahsan Khawaja

    Uploaded by

    Raja Uzair Saeed
    1) Electron mobility characterizes how quickly electrons can move through a material when pulled by an electric field, and there is an analogous quantity for holes called hole mobility. 2) In the absence of an electric field, electrons move randomly via Brownian motion. When a field is applied, electrons and holes drift with an average velocity proportional to the electric field. 3) The drift velocity increases linearly with electric field until saturated drift velocities are reached. Conductivity and resistivity describe how easily current flows through a material.

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    Electronics 1

    Lecture 3

    Moving Charge Carriers


    Ahsan Khawaja
    ahsan_khawaja@comsats.edu.pk
    Lecturer
    Room 102
    Department of Electrical
    Engineering
    Electron mobility
    In solid-state physics, the electron mobility
    characterizes how quickly an electron can
    move through a metal or semiconductor, when
    pulled by an electric field.
    In semiconductors, there is an analogous quantity
    for holes, called hole mobility.
    The term carrier mobility refers in general to
    both electron and hole mobility in
    semiconductors.
    How carrier moves
    When a voltage is applied to a sample, an electric
    field is induced. This forces a movement in both the
    electrons and the holes.
    Electron movement

    In the absence of any electric field, An electron


    moves about randomly in a metal, obeying the laws
    of Brownian motion. That is, they just jitter around.
    Brownian motion
    At finite temperature, the kinetic energy of a
    sample is equal to its thermal energy.
    m v 2 = KB T
    where
    K is Boltzman constant at T=300K
    KBT = 25 meV
    This is very small amount of energy, but if we
    multiply with an electrons mass, we get
    v = 107cm/sec approx
    Themotionofanelectroninacrystal.Theelectronchangesdirectionrandomlywheneveritmakesa
    collision.
    (a) Undernoappliedfieldthereisnonetprogressinanyparticulardirection.
    (b) Whenafieldisapplied,theelectrontendstodriftinsomeparticulardirection.Atrajectorysuchasthis
    wouldbefoundonlyunderveryhighfields.

    Only Thermal Motion

    Thermal + Drift motion.


    Movement of an electron through
    (a) a perfect crystal
    (b) a crystal heated to a high temperature
    (c) a crystal containing atomic level defects. Scattering of the
    electrons reduces the mobility and conductivity.
    Carrier Drift
    The process in which charged particles move because
    of an electric field is called drift.
    Charged particles within a semiconductor move with
    an average velocity proportional to the electric field.
    The proportionality constant is the carrier mobility.

    Hole velocity vh p E

    Electron velocity ve n E
    Notation:
    p hole mobility
    (cm2/Vs)
    n electron mobility
    (cm2/Vs)
    p vs n

    For Si:
    p = 480 cm2/v.s
    n = 1350 cm2/v.s

    So
    n = 2.5 p
    Saturated Drift Velocities

    Vd E
    So one can make a carrier go as fast as we like just by
    increasing the electric field!!!

    Vd for e-

    for holes

    E E
    (a) Implication of above eqn. (b) Actual drift velocity
    Drift Current Equations

    For undoped or intrinsic semiconductor ;

    For electron For hole

    J n nqE n J p pqE p
    drift mobility
    number drift mobility
    current of number
    of free current of holes
    for electron of free
    electrons for holes
    electrons holes per
    per unit
    unit
    volume
    volume
    Conductivity and Resistivity
    J p ,drift qp p E J n ,drift qn( n E )
    J tot ,drift J p ,drift J n ,drift qp p E qn n E
    J tot ,drift q( p p n n ) E E

    The conductivity of a semiconductor is qp p qn n


    Unit: 1/ohm-cm 1
    The resistivity of a semiconductor is
    Unit: ohm-cm
    Diffusion current
    Diffusion : Nature attempts to reduce
    concentration gaps to zero.
    e.g. spreading of drop of ink in water.
    In semiconductors, this flow of carriers
    from one region of higher concentration to
    lower concentration results in a diffusion
    current.
    Diffusion Current
    Diffusion current density =charge carrier flux

    Where Dp is the diffusion constant. For holes and electrons


    diffusing in intrinsic Si, typical values would be Dp=12cm2/sec
    and Dn=34cm2/sec.
    Total Current Density

    When both an electric field and a concentration gap is


    present, the total current density becomes;

    dn
    J n q n nE qDn
    dx

    dp
    J p q p pE qD p
    dx

    J total J n J p
    Diffusion current versus drift
    current
    Diffusion current Drift current

    (WHEN).
    Diffusion current occurs even though there isn't Drift current depends on the electric field
    an electric field applied to the semiconductor . applied on the p-n junction diode.

    (WHY)
    It depends on constants Dp and Dn, and +q and It depends upon permittivity.
    -q, for holes and electrons respectively but it is
    independent of permittivity.

    (WHERE)
    Direction of the diffusion current depends on Direction of the drift current depends
    the change in the carrier concentrations. on the polarity of the applied field.

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