Scribd Logo
Upload

Welcome to Scribd!

  • 329 views

    Gunn Diode

    Uploaded by

    Shubham Goyal
    Gunn diodes use the Gunn effect to produce microwave oscillations. The Gunn effect occurs when a strong electric field in a semiconductor causes electrons to shift from a high mobility state to a low mobility state, producing negative differential conductivity. In a Gunn diode made of gallium arsenide, increasing the voltage first increases current until electrons transfer to a satellite valley where they slow down, decreasing current. This creates domains of high and low conductivity that oscillate, generating microwaves up to 100 GHz. Gunn diodes provide low noise output with medium power.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd

    Gunn Diode

    Uploaded by

    Shubham Goyal
    329 views11 pages
    Gunn diodes use the Gunn effect to produce microwave oscillations. The Gunn effect occurs when a strong electric field in a semiconductor causes electrons to shift from a high mobility state to a low mobility state, producing negative differential conductivity. In a Gunn diode made of gallium arsenide, increasing the voltage first increases current until electrons transfer to a satellite valley where they slow down, decreasing current. This creates domains of high and low conductivity that oscillate, generating microwaves up to 100 GHz. Gunn diodes provide low noise output with medium power.

    Original Description:

    Gunn Diode in Microwave engineering.

    Original Title

    2. Gunn Diode

    Copyright

    © © All Rights Reserved

    Available Formats

    PPT, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Gunn diodes use the Gunn effect to produce microwave oscillations. The Gunn effect occurs when a strong electric field in a semiconductor causes electrons to shift from a high mobility state to a low mobility state, producing negative differential conductivity. In a Gunn diode made of gallium arsenide, increasing the voltage first increases current until electrons transfer to a satellite valley where they slow down, decreasing current. This creates domains of high and low conductivity that oscillate, generating microwaves up to 100 GHz. Gunn diodes provide low noise output with medium power.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    329 views11 pages

    Gunn Diode

    Uploaded by

    Shubham Goyal
    Gunn diodes use the Gunn effect to produce microwave oscillations. The Gunn effect occurs when a strong electric field in a semiconductor causes electrons to shift from a high mobility state to a low mobility state, producing negative differential conductivity. In a Gunn diode made of gallium arsenide, increasing the voltage first increases current until electrons transfer to a satellite valley where they slow down, decreasing current. This creates domains of high and low conductivity that oscillate, generating microwaves up to 100 GHz. Gunn diodes provide low noise output with medium power.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 11

    Gunn diode

    Introduction
    • In 1963 J.B.Gunn discovered the transferred electron mechanism,
    since then we calling it as Gunn effect.
    • The device that uses the Gunn effect known as Gunn diode or
    transferred electron device

    • Gunn effect is only found in N-type semiconductor materials, so that


    it must be associated with electrons rather than with holes

    • Gunn diode is used in local oscillators upto 100 GHz


    • Advantage of Gunn diode is, it produces low noise with medium
    power characteristics
    Gunn effect

    • In the transferred electron mechanism the conduction electrons of


    some semi conductor are shifted from a state of high mobility to a
    state of low mobility by the influence of a strong electric field. This
    process is known as Gunn effect.
    • During this process negative conductivity occurs at some point of
    critical voltage. This negative conductance effect was initially
    proposed by Ridley, Watkin and Hilsum before Gunn demonstrated
    the effect in GaAs.
    • This negative conductivity effect depends only on bulk properties of
    the semiconductor. Therefore it is also called bulk negative
    differential conductivity effect.
    Energy band diagram of GaAs
    Operation of Gunn diode
    • On application of electric field or voltage across an N-type GaAs slice,
    electrons travel from cathode to anode
    • The greater the potential across the slice, the higher is the velocity of
    electrons and therefore greater the current
    Operation of Gunn diode

    • Once the electrons have gained enough energy i.e. at the threshold
    level, they transferred to higher energy band that is to satellite
    valley from central valley

    • In the satellite valley electrons become less mobile and so get


    slowed down. Now there is a fall in current and thus negative
    resistance is exhibited
    • As the voltage rises further, the gradient become sufficient to remove
    electrons from the satellite valley so that current again starts rising
    with voltage
    Gunn domain formation
    • Domain is a bunch of electrons. Negative resistance effect in the
    Gunn diode is mainly because of formation of domains
    • In a heavily doped N-type GaAs slice, it is realistic to assume that
    the density of doping material may not be uniform throughout the
    GaAs sample
    Gunn domain formation
    • Hence there is a possibility that the impurity concentration is less
    somewhere near the cathode terminal of GaAs sample
    • The region where the impurity concentration is less becomes less
    conductive than other regions of the sample. So the resistance of
    this region is high. As a result the voltage drop across this region is
    high compared with other regions
    Gunn domain formation

    • If we start rising D.C. voltage across the GaAs sample, current start
    rising
    • At the same time voltage drop across the less conductive region
    increases and also the electric filed.
    • Further increase in the DC voltage causes a high voltage drop across
    this region, which means a high electric field is set up inside the
    region
    • With this electric field electrons in the conduction band have enough
    energy to jump into the higher energy levels i.e. to the satellite
    valley.

    You might also like

    pFad - Phonifier reborn

    Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

    Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


    Alternative Proxies:

    Alternative Proxy

    pFad Proxy

    pFad v3 Proxy

    pFad v4 Proxy