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Transistor Modelling

This document discusses transistor modeling and parameters for BJT amplifiers. It introduces two common models - the re model and hybrid equivalent model. The re model uses a diode and controlled current source to model transistor behavior but fails to account for output impedance and feedback effects. The hybrid equivalent model is more accurate but limited to specific operating conditions. Key transistor parameters discussed include input impedance Zi, output impedance Zo, voltage gain Av, and current gain Ai. Formulas are provided to calculate these parameters from the transistor's h-parameter equivalent circuit model.

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0% found this document useful (0 votes)
64 views

Transistor Modelling

This document discusses transistor modeling and parameters for BJT amplifiers. It introduces two common models - the re model and hybrid equivalent model. The re model uses a diode and controlled current source to model transistor behavior but fails to account for output impedance and feedback effects. The hybrid equivalent model is more accurate but limited to specific operating conditions. Key transistor parameters discussed include input impedance Zi, output impedance Zo, voltage gain Av, and current gain Ai. Formulas are provided to calculate these parameters from the transistor's h-parameter equivalent circuit model.

Uploaded by

uttam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
You are on page 1/ 18

SHANTILALSHAH

ENGINEERING COLLEGE
INSTRUMENTATION &
CONTROL
Subject :-BASIC ELECTRONICS

TOPIC:- BJT MODELING AND PARAMETERS

Roll No Enrollment No. Name


3004 180430117005 CHAVADA AVINASH J.
3021 180430117031 RACHHADIYA DIXIT J.
INTRODUCTION:TRANSISTOR MODELING

• To begin analyze of small-signal AC response of


BJT amplifier the knowledge of modeling the
transistor is important.
• The input signal will determine whether
• The goal when modeling small-signal behavior is to
make of a transistor that work for small-signal enough
to “keep things linear” (i.e.: not distort too much) [3]
• There are two models commonly used in the small
signal analysis:
a) re model
b) hybrid equivalent model
HOW DOES THE AMPLIFICATION BE DONE?

• Conservation; output power of a system cannot be


large than its input and the efficiency cannot be
greater than 1
• The input dc plays the important role for the
amplification to contribute its level to the ac domain
where the conversion will become as η=Po(ac)/Pi(dc)
• Simply speaking…
DISADVANTAGES

• Re model
– Fails to account the output impedance level of device and feedback
effect from output to input
• Hybrid equivalent model
– Limited to specified operating condition in order to obtain accurate
result
• O/p coupling
VCC
capacitor 
DC supply  “0” s/c
potential R1 RC • Large values
• Block DC
•I/p coupling C1
C2 + and pass AC
capacitor  RS signal
+ Vo
s/c Vi R2 RE C3
• Large values VS -
-
• Block DC
and pass AC • Bypass
signal
Voltage-divider configuration capacitor  s/c
under AC analysis •Large values

R1 RC

+
RS + Vo
Redraw the voltage-divider Vi R2

VS -
configuration after removing dc -
supply and insert s/c for the
capacitors
R1 RC

+ Modeling of BJT begin


RS + Vo
HERE!
Vi R2

VS -
-

Ii Transistor small- Io
B signal ac C
+ equivalent cct
Zi +
E
RS Rc
Vi R1 R2
Zo Vo

VS
- -

Redrawn for small-signal AC analysis


IMPORTANT PARAMETERS

• Input impedance, Zi
• Output impedance, Zo
• Voltage gain, Av
• Current gain, Ai

Input Impedance, Zi(few ohms  M)

The input impedance of an amplifier is the value as a


load when connecting a single source to the I/p of
terminal of the amplifier.
TWO PORT SYSTEM
-DETERMINING INPUT IMPEDANCE Z I

Rsense
Vi
+
Ii
+ Zi 
VS Zi Vi Two-port Ii
- system
Vs  Vi
- Ii 
Rs e n s e
Determining Zi
• The input impedance of transistor can be
approximately determined using dc biasing because it
doesn’t simply change when the magnitude of applied
ac signal is change.
Demonstrating the impact of Zi
Rsource

+ 600 Ω +
Zi
VS=10mV 1.2 k Ω
Vi Two-port
- system
-

I dealsour ce,Rs o u r ce 0Ω


Ful l10m Vappl i edt ot hesyst em

Wi t hsour cei m pedance,Rs o u r ce 600Ω


ZiVs 1.2k(10m)
Vi    6.6m V
Zi  Rs o u r c e 1.2k  600
re TRANSISTOR MODEL

• employs a diode and controlled current source to


duplicate the behavior of a transistor.
• BJT amplifiers are referred to as current-controlled
devices.

Common-Base Configuration

Common-base BJT transistor


re model
re equivalent cct.
Ic Ie 26mV
C E
re   IE i sth eDC l ev elof
IE( dc)
B B

Common-base BJT transistor - pnp em i tter


cu rren t
Ie Ic
e c Therefore, the input impedance, Zi = re
that less than 50Ω.
Ic  α Ie For the output impedance, it will be as
b b follows;

re model for the pnp common-base I e=0A Ic


configuration e c

V s =0V re Ic  0 A
Ie Ic
e c b b
isolatio
re Ic  α Ie n part, Determining Z o for common-base
b b Zi=re
common-base r e equivalent cct
Zo  
Ie BJT common-base
e transistor amplifier c Ic  α Ie Io
+
+
Vi re Zo   RL
Zi Vo
-
- b b

Defining Av=Vo/Vi for the common-base configuration


Vo  IoRL   Ic RL  IeRL

Vi IeZi Iere

Vo IeRL Vol t agegai n,


Av   Av 
RL RL

Vi Iere re re
DETERMINATION OF PARAMETER

Vi  h1 1Ii  h1 2Vo
Vi
h1 1 
Ii Vo  0 V

Vi
h1 2 
Vo Vo  0 V

IO  h 2 1I i  h 2 2Vo
S o l v i nV
go  0 V,
Ii
h2 1 
Io Vo  0 V

Io
h2 2 
Vo Io  0 A

H22 is a
conductance!
General h-Parameters for any
Transistor Configuration

hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
COMMON EMITTER HYBRID EQUIVALENT
CIRCUIT
COMMON BASE HYBRID EQUIVALENT
CIRCUIT
Simplified General h-Parameter Model
The model can be simplified based on these approximations:

hr  0 therefore hrVo = 0 and ho   (high resistance on the output)

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