Solid State Physics: Statistical Mechanics Band Theory of Solids
Solid State Physics: Statistical Mechanics Band Theory of Solids
Solid State Physics: Statistical Mechanics Band Theory of Solids
Statistical Mechanics
Band Theory of Solids
Variation of Energy bands
• As III-V ternary and quaternary alloys are varied over
their composition ranges, their band structures change.
• For example, the band structure of GaAs and AlAs, and
the way in which the bands change with composition x in
the ternary compound AlxGa1-x As.
Variation of direct and indirect conduction bands in AIGaAs as a function of
composition
The (E,k) The (E,k) diagram for
diagram for
AlAs,
GaAs, showing three
showing three minima in the
minima in conduction band;
the
conduction
band;
Variation of Energy bands
• The binary compound GaAs is a direct material, with a
band gap of 1.43 eV at room temperature.
• For reference, we call the direct ( k = 0) conduction band
minimum .
• There are also two higher-lying indirect minima in the
GaAs conduction band, but these are sufficiently far above
that few electrons reside there.
• We call the lowest-lying GaAs indirect minimum L and the
other X.
• In AlAs the direct minimum is much higher than the
indirect X minimum, and this material is therefore indirect
with a band gap of 2.16 eV at room temperature.
Variation of Energy bands
• Since light emission is most efficient for direct materials, in
which electrons can drop from the conduction band to the
valence band without changing k (and therefore momentum),
• LEDs in GaAsP are generally made in material grown with a
composition less than x = 0.45.
• For example, most red LEDs in this material are made at
about x =0.4, where the minimum is still the lowest-lying
conduction band edge, and
• where the photon resulting from a direct transition from this
band to the valence band is in the red portion of the
spectrum (about 1.9 eV).
• The radiative recombination in indirect materials can be
enhanced by adding the impurities.
Effective Mass
Effective Mass
• The electrons in a crystal are
• not completely free,
• interact with the periodic potential of the lattice.
• As a result, their "wave-particle" motion cannot be
expected to be the same as for electrons in free space.
• Thus, in applying the usual equations of
electrodynamics to charge carriers in a solid, the
altered values of particle mass should be used.
• To account for most of the influences of the lattice, so that the electrons
and holes can be treated as "almost free" carriers in most computations.
• The calculation of effective mass must take into account the shape of the
energy bands in three-dimensional k-space, taking appropriate averages
over the various energy bands.
Effective Mass
• the electron momentum is p = mv = ħk. Then
net force in d 1
x direction Fx m v x e( E x v y B )
dt
d 1
net force in Fy m v y e( v x B )
y direction
dt
Hall Effect
As a result, electrons
move in the y direction
and an electric field
component appears in the
y direction, Ey. This will
continue until the Lorentz
force is equal and
opposite to the electric
force due to the buildup of
electrons – that is, a
steady condition arises.
B
Hall Effect
mvx
e( E x v y B )
mv y
e( E y v x B )
eE x
vx C v y
eB m
C eE y
m vy C vx
m
Hall Effect
eE y
vy C vx 0
m
C vx
Ey m
e eB
E y C E x Ex
m
e
vx Ex
m
vx
Ex m
e
Hall Effect
The Hall coefficient is defined as:
eB
Ey Ex
m 1
RH 2
jx B ne ne
Ex B
m
For copper:
n = 8.47 × 1028 electrons/m3.
Hall Effect
Hall Effect: Electrons & Holes