Solid State Physics: Statistical Mechanics Band Theory of Solids

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Solid State Physics

Statistical Mechanics
Band Theory of Solids
Variation of Energy bands
• As III-V ternary and quaternary alloys are varied over
their composition ranges, their band structures change.
• For example, the band structure of GaAs and AlAs, and
the way in which the bands change with composition x in
the ternary compound AlxGa1-x As.
Variation of direct and indirect conduction bands in AIGaAs as a function of
composition
The (E,k) The (E,k) diagram for
diagram for
AlAs,
GaAs, showing three
showing three minima in the
minima in conduction band;
the
conduction
band;
Variation of Energy bands
• The binary compound GaAs is a direct material, with a
band gap of 1.43 eV at room temperature.
• For reference, we call the direct ( k = 0) conduction band
minimum .
• There are also two higher-lying indirect minima in the
GaAs conduction band, but these are sufficiently far above
 that few electrons reside there.
• We call the lowest-lying GaAs indirect minimum L and the
other X.
• In AlAs the direct  minimum is much higher than the
indirect X minimum, and this ma­terial is therefore indirect
with a band gap of 2.16 eV at room temperature.
Variation of Energy bands
• Since light emission is most efficient for direct materials, in
which elec­trons can drop from the conduction band to the
valence band without chang­ing k (and therefore momentum),
• LEDs in GaAsP are generally made in material grown with a
composition less than x = 0.45.
• For example, most red LEDs in this material are made at
about x =0.4, where the  minimum is still the lowest-lying
conduction band edge, and
• where the photon resulting from a direct transition from this
band to the valence band is in the red portion of the
spectrum (about 1.9 eV).
• The radiative re­combination in indirect materials can be
enhanced by adding the impurities.
Effective Mass
Effective Mass
• The electrons in a crystal are
• not completely free,
• interact with the periodic potential of the lattice.
• As a result, their "wave-particle" motion cannot be
expected to be the same as for electrons in free space.
• Thus, in ap­plying the usual equations of
electrodynamics to charge carriers in a solid, the
altered values of particle mass should be used.
• To account for most of the influences of the lattice, so that the electrons
and holes can be treated as "almost free" carriers in most computations.
• The calculation of effective mass must take into account the shape of the
energy bands in three-dimensional k-space, taking appropriate averages
over the various energy bands.
Effective Mass
• the electron momentum is p = mv = ħk. Then

Thus the electron energy is parabolic with wave


vector k. The electron mass is inversely related
to the curvature (second derivative) of the (E, k)
relationship, since
Although electrons in solids are not free, most energy bands are
close to parabolic at their minima (for conduction bands) or
maxima (for va­lence bands).
We can also approximate effective mass near those band extrema
From the curvature of the band.
Effective Mass
• The effective mass of an electron in a band
with a given (E, k) rela­tionship is

Thus the curvature of the band determines the


electron effective mass.
Effective Mass
• The electron effective
mass in GaAs is much
smaller in the direct 
conduction band (strong
curvature) than in the L
or X minima (weaker
curvature, smaller value
in the denominator of
the m* expression).
Effective Mass
• Note That:
• the cur­vature of d2E/dk2 is positive at the conduction band minima,
but is negative at the valence band maxima.
• Thus, the electrons near the top of the valence band have
negative effective mass,

• Valence band elec­trons with negative charge and negative mass


move in an electric field in the same direction as holes with positive
charge and positive mass.
• we can fully account for charge transport in the valence band by
considering hole motion.
• For a band centered at k = 0 (such as the  band in GaAs), the (E, k)
relationship near the minimum is usually parabolic.
In 1879, while working on his doctoral thesis,
Hall Effect Hall was pursuing the question first posed by
Maxwell as to whether the resistance of a coil
excited by a current was affected by the
presence of a magnet.

Does the force act on the conductor or the


current?

Hall argued that if the current was affected by


the magnetic field then there should be "a state
of stress... the electricity passing toward one
side of the wire."

If a current carrying conductor is placed in a transverse


magnetic field, potential is developed in the conductor
in the direction perpendicular to both the current and
magnetic field. This phenomenon is known as Hall
Effect. It was discovered by Hall in 1879.
Hall Effect

December 19, 2021 PHY109 (ENGINEERING PHYSICS) 13


Hall Effect

December 19, 2021 PHY109 (ENGINEERING PHYSICS) 14


Hall Effect
Initially, v  vx x̂  v y ŷ  vz ẑ
E  E x x̂
B  Bz ẑ
  d 1    
F  m   v   e(E  v  B)
 dt  

net force in  d 1
x direction Fx  m    v x   e( E x  v y B )
 dt  
 d 1
net force in Fy  m    v y  e( v x B )
y direction
 dt  
Hall Effect
As a result, electrons
move in the y direction
and an electric field
component appears in the
y direction, Ey. This will
continue until the Lorentz
force is equal and
opposite to the electric
force due to the buildup of
electrons – that is, a
steady condition arises.
B
Hall Effect
mvx
  e( E x  v y B )

mv y
  e( E y  v x B )

eE x
vx   C v y
eB m
C  eE y
m vy   C vx
m
Hall Effect
eE y
vy    C vx  0
m
C vx
 Ey  m
e eB
E y  C E x   Ex
m
e
vx   Ex
m
vx
 Ex  m
e
Hall Effect
The Hall coefficient is defined as:

eB
Ey Ex
m 1
RH   2 
jx B ne  ne
Ex B
m

For copper:
n = 8.47 × 1028 electrons/m3.
Hall Effect
Hall Effect: Electrons & Holes

• The Hall Effect experiment suggests that a carrier can have a


positive charge.
• These carriers are “holes” in the electron sea - the absence of an
electron acts as a net positive charge. These were first explained
by Heisenberg.
• We can’t explain why this would happen with our free electron
theory.
• Note: the conditions we derived for the steady state can be
invalid for several conditions (for example, when there is a
distribution of collision times). But in general, it is a very
powerful tool for looking at properties of materials.
Hall Effect: Applications

For a 100-m thick Cu


film, in a 1.0 T
magnetic field and
through which I = 0.5 A
is passing, the Hall
voltage is 0.737 V.
Hall Effect: Applications
Hall-Effect Position Sensors

Hall-Effect position sensors have


replaced ignition points in many
distributors and are used to directly detect
crank and/or cam position on
distributorless ignition systems (DIS),
telling the computer when to fire the
coils. Hall-Effect sensors produce a
voltage proportional to the strength of a
magnetic field passing through them,
which can come from a permanent
magnet or an electric current. Since
magnetic field strength is proportional to
an electric current, Hall-Effect sensors
can measure current. They convert the
magnetic field into millivolts that can be
read by a DMM.

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