Basic Electronics Engg

Transistor and OP-AMP

Unit 2
Ms. Apurva R. Ulhe
Bipolar Junction Transistor

The three layers of BJT are called Emitter, Base and Collector
Base is very thin compared to the other two layers Base is lightly doped.
Emitter is heavily doped. Collector is moderately doped NPN — Emitter and Collector are made of
N-type semiconductors; Base is P-type PNP — Emitter and Collector are P-type, Base is N-type
Both types (NPN and PNP) are extensively used, either separately or in the same circuit BJT has
two junctions — Emitter-Base (EB) Junction and Collector-Base (CB) Junction
The device is called "bipolar junction transistor" because current is due to motion of two types of
charge carriers — free electrons & holes Transistor Analogous to two diodes connected back-to-
back: EB diode and CB diode
In diodes there is one p-n junction. ' In Bipolar junction transistors (BJT), there are three layers and
two p-n junctions.
Collector (N) Collector (P) C (collector) Base-Collector n junction Base-Emitter n junction E (emitter)
c P n (P) Base Emitter (N) (N) Base E nuttel (P) (base) (b) npn B (c) pnp Note: Arrow Direction from
P to N ( Like Diode)
Bipolar Junction Transistor : Construction

Circuit symbol always showing the direction of “conventional

current flow” between the base terminal and its emitter terminal.
The direction of the arrow always points from the positive P-
type region to the negative N-type region for both transistor
types, exactly the same as for the standard diode symbol.
There are basically three possible ways to connect it within an
electronic circuit with one terminal being common to both the
input and output signals.
Each method of connection responding differently to its input
signal within a circuit as the static characteristics of the
transistor vary with each circuit arrangement.
Bipolar Junction Transistor : Type
Bipolar Junction Transistor : Operation

Operation of NPN transistor is discussed here '

For normal operation (amplifier application)

— EB junction should be forward biased

— CB junction should be reverse biased Depletion width at EB junction is narrow (forward biased)

Depletion width at CB junction is wide (reverse biased)

Working of NPN and PNP transistor
BJT : V-I Characteristics

The I-V characteristic of Power BJT divides into four regions.

1. Cut-off region
2. Active region
3. Quasi-saturation region
4. Hard saturation region

Emitter junction (BE) and Collector junction (CB).

BJT : region of operation
EMITTER COLLECT REGION OF
JUNCTION OR OPERATIO
JUNCTION N

Forward Forward Saturation

biased biased region

Forward Reverse Active

biased biased region

Reverse Forward Inverse

biased biased active region

Reverse Reverse Cutoff region

biased biased
BJT as switch
Cut-off Characteristics

• The input and Base are grounded ( 0v )

• Base-Emitter voltage VBE < 0.7v
• Base-Emitter junction is reverse biased
• Base-Collector junction is reverse biased
• Transistor is “fully-OFF” ( Cut-off region )
• No Collector current flows ( IC = 0 )
• VOUT = VCE = VCC = ”1″
• Transistor operates as an “open switch”
Saturation Characteristics

• The input and Base are connected to VCC

• Base-Emitter voltage VBE > 0.7v
• Base-Emitter junction is forward biased
• Base-Collector junction is forward biased
• Transistor is “fully-ON” ( saturation region )
• Max Collector current flows ( IC = Vcc/RL )
• VCE = 0 ( ideal saturation )
• VOUT = VCE = ”0″
• Transistor operates as a “closed switch”
CE amplifier
Many areas as an audio amplifier, as a basic switch for logic circuits, as a general
analogue amplifier and in many other applications.

The common emitter circuit configuration provides voltage gain combined with a
moderate current gain, as well as a medium input and a medium output impedance. As
such the common emitter configuration is a good all round circuit for use in many
applications.

It is also worth noting at this stage that the common emitter transistor amplifier inverts
the signal at the input. Therefore if a waveform that is rising enters the input of the
common emitter amplifier, it will cause the output voltage to fall. In other words it has a
180° phase change across the circuit.

Dependent upon the actual electronic circuit design itself, the common emitter does not
use too many electronic components, sometimes as few as two resistors, although if
the bias needs setting for analogue circuits, then four resistors and three capacitors
may be used.
Metal Oxide Semiconductor Field Effect Transistors (MOSFET)
Semiconductor device which is widely used for switching and
amplifying electronic signals in the electronic devices. The MOSFET
is a core of integrated circuit and it can be designed and fabricated in
a single chip because of these very small sizes

the functionality of MOSFET depends on the electrical variations

happening in the channel width along with the flow of carriers (either
holes or electrons). The charge carriers enter into the channel
through the source terminal and exit via the drain.The width of the
channel is controlled by the voltage on an electrode which is called
the gate and it is located in between the source and the drain. It is
insulated from the channel near an extremely thin layer of metal
oxide. The MOS capacity that exists in the device is the crucial
Depletion Mode When there is no voltage across the gate terminal, the channel shows its maximum
conductance. Whereas when the voltage across the gate terminal is either positive or negative, then the

channel conductivity decreases.

Enhancement Mode When there is no voltage across the gate terminal, then the device does not

conduct. When there is the maximum voltage across the gate terminal, then the device shows enhanced

conductivity.
 MOSFET : Construction

The metallic gate terminal in the MOSFET is

insulated from the semiconductor layer by a
SiO2 layer or dielectric layer.

They are source(S), Gate (G), Drain (D) and the

body which is called as substrate.
Symbol and MOSFET Types
MOSFET Operation
The substrate is connected to the source internally. In N channel Enhancement MOSFET the source and drain are
of N type semiconductor which is heavily doped and the Substrate is of P type semiconductor. Majority charge
carriers are electrons. The source and drain terminals are physically separated in Enhancement mode.

In P channel Enhancement MOSFET the source and drain are of P type semiconductor which is heavily doped and
the Substrate is of N type semiconductor. Majority charge carriers are holes.

In the N Channel depletion MOSFET a small strip of semiconductor of N type connects the source and drain. The
source and drain are of N type semiconductor and the Substrate is of P type semiconductor. Majority charge
carriers are electrons. The source and drain are heavily doped.

In the P Channel depletion MOSFET a small strip of semiconductor of P type connects the source and drain. The
source and drain are of P type semiconductor and the Substrate is of N type semiconductor. Majority charge
carriers are holes.
MOSFET V-I char. , Region of operation
Cut off region:

No current flows through it and the MOSFET is off.

Ohmic region:

Drain current increases when the drain source voltage increases.

Used as amplifier in this region.
Saturation region:

Drain current is constant for drain source voltage. Used as switch in this region. This occurs when
the drain source voltage reaches pinch off voltage.
Depletion mode:

The MOSFET is ON by default. When negative voltage is applied to the gate terminal it operates in
the depletion mode and when positive voltage is applied, it operates in the enhancement mode.
Enhancement mode:

When positive voltage is applied to the gate terminal, it starts conducting and the current starts to
flow.
MOSFET as switch and amplifier
As shown the MOSFET is switched ON when positive voltage
is applied as VGS.

This will drive the LAMP connected on Drain terminal to be

powered ON.

When zero voltage is applied to the device at VGS, it will be

powered OFF.

Hence Lamp will be powered OFF at this stage.

In many applications MOSFET is used as small signal linear

amplifier.

Typically, in the amplifier circuits, FETs work in the saturation

region.

In this region, current does not depend on drain voltage.

Current is the function of the Gate voltage only. In MOSFET

amplifiers,

the operating point is normally in the saturation region.

Operational Amplifier : Functional Block Diagram
Ideal Operational Amplifier
An operational amplifier (OP Amp) is a direct current coupled voltage amplifier. That is, it
increases the input voltage that passes through it. The input resistance of an OP amp
should be high whereas the output resistance should be low. An OP amp should also
have very high open loop gain. In an ideal OP amp, the input resistance and open loop
gain is infinity whereas the output resistance is zero.So, an ideal op amp is defined as,
a differential amplifier with infinite open loop gain, infinite input resistance and zero
output resistance.

The ideal op amp has zero input current. This is because of infinite input resistance. As
the input resistance of ideal op amp is infinite, an open circuit exists at input, hence
current at both input terminals is zero.
There is no current through the input resistance, there will be no voltage drop between
the input terminals. Hence no offset voltage appears across the inputs of an ideal
operational amplifier.

The bandwidth of operation of an ideal op-amp is also infinite. That means the op-
amp perform its function for all ranges of frequencies of operation.
Op-amp As Inverting

An inverting amplifier (also known as an inverting operational amplifier or an inverting op-amp) is a type of
operational amplifier circuit which produces an output which is out of phase with respect to its input by 180o.

This means that if the input pulse is positive, then the output pulse will be negative and vice versa. The figure
below shows an inverting operational amplifier built by using an op-amp and two resistors.

Here we apply the input signal to the inverting terminal of the op-amp via the resistor Ri. We connect the non-
inverting terminal to ground. Further, we provide the feedback necessary to stabilize the circuit, and hence to
control the output, through a feedback resistor Rf
Op-amp As Non Inverting

Non-inverting amplifier is an op-amp-based amplifier with positive voltage gain.

A non-inverting operational amplifier or non-inverting op-amp uses an op-amp as the main element.

The op amp has two input terminals (pins). One is inverting denoted with a minus sign (-), and other is non-inverting denoted with a
positive sign (+).

When we apply any signal to the non – inverting input, it does not change its polarity when it gets amplified at the output terminal.

So, in that case, the gain of the amplifier is always positive.

From the circuit, it can be seen that the R2 (Rf in the above picture) and R1 (R1 in the
above picture) act as a potential divider for the output voltage and the voltage across
resistor R1 is applied to the inverting input.

When the non-inverting input is connected to the ground, i.e., VIN = 0, the voltage at the
inverting input terminal must also be at ground level; if not, any voltage difference
between the input terminals would be amplified to move the inverting input terminal back
to the ground level (inputs of the Op Amp will always be at the same voltage).

Since the inverting input terminal is at ground level, the junction of the resistors R1 and R2
must also be at ground level. This implies that the voltage drop across R1 will be zero. As
a result, the current flowing through R1 and R2 must be zero. Thus, there are zero voltage
drops across R2, and therefore the output voltage is equal to the input voltage, which is
0V. When a positive-going input signal is applied to the non-inverting input terminal, the
output voltage will shift to keep the inverting input terminal equal to that of the input
voltage applied. Hence, there will be a feedback voltage developed across resistor R1,

VR1 = VIN = VOUT R1 / (R1 + R2)

THANK YOU !!!