Memristor Sem I Shraddha M 5

Department of Physics
Project on
MEMRISTOR TIN-OXIDE (SnO2)
By
SHRADDHA DILIP MUNGASE
CONTENTS OF THE PRESENTATION……
 WHAT IS MEMRISTOR ?
 ADVANTAGES OF MEMRISTOR
 SnO2 MATERIAL
 WHY SNo2 MATERIAL????
 Need of Memristor
 LITURATURE SURVEY
 FUTURE WORK
 REFERENCES
WHAT IS MEMRISTOR ?
 A memristor, short for "memory resistor," is a two-terminal non-volatile

memory device that represents a kind of passive circuit element.
 SYMBOL OF MEMRISTOR…..
ADVANTAGES OF MEMRISTOR
 Power Consumption.
 Creating a Analog Computer that works much faster than Digital ones.
 Provides greater resiliency and reliability when power is interrupted in data
centers. Density allows for more information to be stored.
 Would allow for a quicker boot up since information is not lost when the
device is turned off.
 Eliminates the need to write computer programs that replicate small parts of
the brain. Compatible with current CMOS interfaces.
 Uses less energy and produces less heat.
SnO2 MATERIAL
 Atomic number: 50.

 Atomic weight: 118.710.
 Melting point: 505.08 K (231.93°C or 449.47°F)
 Boiling point: 2875 K (2602°C or 4715°F)
 Density: 7.287 grams per cubic centimeter.
 Phase at room temperature: Solid.
 Element classification: Metal.
 Period number: 5.
SnO2 Material and Methods
 Soft
 silvery-white metal
 Lightweight
 highly resistant
 Low cost
Need of Memristor
 memristor can be useful for low-power computation and storage to store data
without the need of power using.
 Memristors are used in digital memory, logic circuits, biological and
neuromorphic systems.
 switching devices, neural networks.
LITURATURE SURVEY
REF. JOURNAL MATERIA METHOD CHARACTERI TEMP. Diamete TIME FOR
NO L ZATION r/Band DEGREDATION
gap
1 A scalable neuristor SiO2, Nano imprint VMM 20-22’ C 6eV 2 hours

built with Mott Nb2O5 lithography
memristor
2 Analogue signal and CMOS Memristor XRD 300’c 1.5eV Half hour
image processing chip fabrication an
with large integeration
memristor crossbars
3 Memristor based on Pt/ZTO Vapour XRD ,AFM,X 27’C 2.89 eV 500 second
amorphous zinc tin deposition PS
oxide schottky method
diodes.
4 Solid state TiN/Ti/ Resistive XRD - - -
electronics Al2O3/W switching
method
5 Memories - NbO 2 multi-scale XRD 0.68eV 70 min
Materials, Devices, modeling High
Circuits and Systems method
6 Materials Today Ta2O5IT Memristor RF 250 °C - 3 hours
Electronics O fabrication
bottom
electrod
eAl2O3
7 Digital and NiO physical RF 450 °C 100 nm 2 hours
analog resistive deposition thick,
switching in NiO- techniques 800 μm
based memristor diamet
by electrode er
engineering
8 Results in Physics W/ electroform RF 35’C 5.8eV 3h
SnO2/ ing process
ZTO/TiN
9 Towards zinc-tin E-beam VMM 120 ◦C 0.169e 2h
Sustainable oxide evaporation V
Crossbar Artificial (ZTO)
Synapses with
Zinc-Tin Oxide
10 Engineering the Nb2O5 E-beam XRD 300’ C 1486.6 1h
threshold evaporation 8 eV
switching
response of
Nb2O5-based
memristors by Ti
doping
11 Enhanced Switching Al2O3 Neuromorphic AES 250◦C - -
Properties in TaOx computing
Memristors Using
Diffusion Limiting Layer
for Synaptic Learnin
12 Fabrication of TiO2 thin TiO2 Memristor XRD 450 °C 110 nm 2h
film memristor device fabrication thick,150
using μm
electrohydrodynamic diameter
inkjet printing
13 Flexible Oxide Thin Film ZnO Composition XRD 350 °C 1.67ev 7h
Transistors, Memristors, and deposition
and Their Integration method
14 High Spatial Resolution (NbO2, standard SThM 73.15 ‘c 0.215 eV -
Thermal Mapping of VO2, Ti2O3 photolithographi
Volatile Switching in and TaOx c processes
NbOx-based Memristor
using in-situ Scanning
Thermal Microscopy
15 Materials Letters Tin-Oxide Memristor XRD 85 ◦C 110 nm 2h
Fabrication thick,150
μm
diameter
16 Liquid-to-solid SnO facile liquid-to- SEM 200’c 100 nm 3h
exfoliated solid exfoliation thick 200
Ag/2D-SnO/Au flexible method μm
memristor with electric diameter
field direction-
dependent asymmetric
hysteresis
characteristics
17 Resistive switching TiO2 hydrothermal XRD 200’c,213 - 2h
behavior in memristors synthesis ’c
with TiO2 nanorod method
arrays of different
dimensions
18 A ferroelectric memristor BaTiO3 Memristor XRD 750°C - 1h
deposition
19 Applied Surface Science SnO2 TiO2 Hydrolysis and XRD 35’c 4.2 eV 2h
condensation
20 Alloys and Compounds TiO2 hydrothermal XRD 450 ‘C 1.6eV 2h
process
21 Materials Today Electronics TiN/ hydrothermal XRD 250’c - 3h
LaMnO3/Pt synthesis method
22 Zinc Tin Oxide Synaptic ZTO Memristor XRD 25 ◦C 4.0 eV 2h
Device for Neuromorphic deposition
Engineering
23 Suboxide interface induced TiO2/TiN Set and reset XRD 27’C - 2hr
digital-to-analog switching process
transformation in all Ti-
based memristor devices
24 High Spatial Resolution NbO2, VO2, MWIR, Scanning XRD 25’C 100 to 1hr
Thermal Mapping of Volatile Ti2O3 and Thermal 600nm
Switching in NbOx-based TaOx Microscopy
Memristor using in-situ
Scanning Thermal
Microscopy
25 A Robust and Low-Power SnO2 Set and reset TEM 85 °C - 2hr

Bismuth Doped Tin Oxide
Memristor Derived from
Coaxial Conductive
Filaments
FUTURE WORK
 Used for understanding feelings involves pain and pleasure centers in the
brain along with neurotransmitters (serotonin, dopamine, melatonin, glycine,
etc.)
 Biologists know that neurotransmitters play an important role in feeling

centers because, you only need to take a drug like cocaine or LSD (that mimic
natural neurotransmitters) to dramatically change the state of consciousness.
REFERENCES
References [1] S. Spiga, Memristive Devices for Brain-Inspired Computing,
Elsevier, 2020.
[2] S. Yu, H. Jiang, S. Huang, X. Peng, A. Lu, IEEE Circuits Syst. Mag. 21 (2021) 31–
56.
[3] R. Waser, D. Ielmini, H. Akinaga, H. Shima, H.-S.P. Wong, J.J. Yang, S. Yu, Resist.
Switch, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany, 2016, pp. 1–
30.
[4] J.J. Yang, D.B. Strukov, D.R. Stewart, Nat. Nanotechnol. 8 (2013) 13–24.
[5] A. Sawa, Mater. Today 11 (2008) 28–36.
[6] F. El Kamel, P. Gonon, C. Vall´ee, V. Jousseaume, H. Grampeix, Appl. Phys. Lett.
98 (2011).
[7] Y.F. Chang, P.Y. Chen, B. Fowler, Y.T. Chen, F. Xue, Y. Wang, F. Zhou, J.C. Lee, J.
Appl. Phys. 112 (2012), 123702.
[8] M. Lanza, A. Sebastian, W.D. Lu, M.Le Gallo, M.F. Chang, D. Akinwande, F. M.
Puglisi, H.N. Alshareef, M. Liu, J.B. Roldan, Science 376 (2022) (80-.).
[9] R.S. Williams, Faraday
THANK YOU

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Department of Physics

 A memristor, short for "memory resistor," is a two-terminal non-volatile

 Atomic number: 50.

1 A scalable neuristor SiO2, Nano imprint VMM 20-22’ C 6eV 2 hours

25 A Robust and Low-Power SnO2 Set and reset TEM 85 °C - 2hr

 Biologists know that neurotransmitters play an important role in feeling

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