POWER ELECTRONICS FOR

ELECTRIC VEHICLE APPLICATION

Course Code: 18AUE411T

Unit 1: Automotive Semiconductor Devices

Topic: i) Power IGBT.

Dr. CARUNAISELVANE.C
Assistant Professor
Automobile Engineering Department
SRM Institute of Science and Technology.
 Insulated Gate Bipolar Transistor
 Insulated Gate Bipolar Transistor (IGBT): three-terminal
electronic device.
 Ideal semiconductor switching device: combination of
conventional Bipolar Junction Transistor, (BJT) and a Field
Effect Transistor, (MOSFET).
 Acquires the key features of these two types of common
transistors,
 high input impedance and high switching speeds of a
MOSFET
 low saturation voltage of a bipolar transistor.
 combines to produce another type of transistor switching
device that is capable of handling large collector-emitter
currents with virtually zero gate current drive.
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 IGBT – Application
 IGBTs are mainly used in
 inverters,
 converters and
 power supplies.
 IGBT is used: demands of the solid state switching device
are not fully met by power BJTs and power MOSFETs.

BJT Base Collector Emitter

MOSFET Gate Drain Source
IGBT Gate Collector Emitter

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 IGBT – Comparison
 The main advantages of IGBT over a Power MOSFET and a BJT
are:
 It has a very low on-state voltage drop due to conductivity
modulation and has superior on-state current density. So
smaller chip size is possible and the cost can be reduced.
 Low driving power and a simple drive circuit due to the
input MOS gate structure. It can be easily controlled as
compared to current controlled devices (thyristor, BJT) in
high voltage and high current applications.
 Wide Safe Operating Area (SOA). It has superior current
conduction capability compared with the bipolar transistor. It
also has excellent forward and reverse blocking capabilities.

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 IGBT – Comparison
 The main drawbacks are:
 Switching speed is inferior to that of a Power MOSFET
and superior to that of a BJT. The collector current tailing
due to the minority carrier causes the turnoff speed to be
slow.
 There is a possibility of latchup due to the internal PNPN
thyristor structure.

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 IGBT – Comparison

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 IGBT – Basic Structure

Fig. Vertical cross section of an IGBT

 Combines an insulated gate N-channel MOSFET input with

a PNP bipolar transistor
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 IGBT – Basic Structure

Fig. Internal circuit diagram of an IGBT

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 IGBT – Types

❖ (a) NPT type: Non punch through/ Symmetry

▪ Positive temperature coefficient
❖ (b) PT type: Punch through/ Non Symmetry
▪ Negative temperature coefficient
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 IGBT – Types

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 IGBT – Types

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 IGBT – Operation as a Circuit
 IGBT is a Voltage controlled device.
 Requires a small voltage to the gate to stay in the
conduction state.
 These are unidirectional devices, they can only switch
current in the forward direction which is from collector to
emitter.
RB: to short the base and emitter
terminals of the NPN transistor to
ensure that the thyristor doesn’t
latch-up

Fig: Operational circuit diagram

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 IGBT – Operation as a Switch
 Procedure:
 Gate volt VG is applied to the gate
pin to switch a motor (M) from a
supply voltage V+.
 Resistor Rs is roughly used to limit
the current through the motor.

Fig: Operation as a switch

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 IGBT – Operation as a Switch
 Input characteristics:
 Initially, when no voltage is applied
to the gate pin the IGBT is in turn
off condition and no current flows
through the collector pin.
 When the voltage applied to the
gate pin exceeds the threshold
Fig: VI input characteristics voltage, the IGBT starts conducting
and the collector current IG starts to
flow between the collector and
emitter terminals.
 The collector current increases with
respect to the gate voltage.
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 IGBT – Operation as a Switch
 Output characteristics:
 Initially, when the Gate Voltage VGE is
zero the device is in the off state, this
is called the cutoff region.
 When VGE is increased and if it is less
than the threshold voltage then there
will be a small leakage current flowing
through the device, but the device will
Fig: VI output characteristics
still be in the cutoff region.
 When the VGE is increased beyond the
threshold voltage the device goes into
the active region and the current
starts flowing through the device.

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 IGBT – VI Characteristics

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 Dr. CARUNAISELVANE.C
Assistant Professor
Automobile Engineering Department
SRM Institute of Science and Technology.
carunaic@srmist.edu.in
+91 8265804594

https://scholar.google.com/citations?user=lmvjiSUAAAAJ&hl=en
https://www.researchgate.net/profile/Carunaiselvane_Carounagarane
https://www.linkedin.com/in/dr-carunaiselvane-c-88b41723/

Thank you all for your attention

Carunaiselvane Carounagarane (S’16) received the B.Tech. degree in electrical and electronics engineering
and the M.Tech. degree in electrical drive and control from Pondicherry Engineering College, Pondicherry
University, Puducherry, India, in 2008 and 2012, respectively. He has received the Ph.D. degree from
Indian Institute of Technology Roorkee, India in 2020 under the title “Analysis of Large Hydrogenerators
Operating at Continuous Overloads”. He is currently working as Assistant Professor with Automobile
Engineering Department at SRM Institute of Science and Technology, Chennai, India. From 2008 to 2010, he
was an officer grade Electrical Engineer with Larsen and Toubro Pvt. Ltd., India. From 2012 to 2014, he
has been an Assistant Professor with the Electrical and Electronics Engineering Department, Sri Manakula
Vinayagar Engineering College, Pondicherry University. His research interests include electrical machines,
power electronics, machine design, electric vehicle drives and controls, and renewable and sustainable
energy. Dr. Carunaiselvane has presented many research papers in various national and international
conferences and journals.