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Parasitic Extraction CMOS Detailed

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0% found this document useful (0 votes)
28 views9 pages

Parasitic Extraction CMOS Detailed

Uploaded by

harithapulagam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Parasitics in CMOS

Circuits: Detailed
Overview
Understanding Parasitics and Mathematical Modeling
Introduction

 Parasitics in CMOS circuits arise


due to physical properties of
materials, affecting performance
metrics such as delays, power
losses, and signal integrity.
 They include parasitic
resistances, capacitances, and
inductances, which must be
carefully modeled and mitigated.
Parasitic Resistance (R)
 Parasitic resistance occurs in metal interconnects
and diffusion regions due to the finite resistivity of
materials.
 Sources: Interconnect resistance, substrate
resistance, and contact resistance.
 Equation: R = ρ (L/A)
 Impact: Delays, IR drops, power loss due to Joule
heating (P = I²R).
Parasitic Capacitance (C)
 Parasitic capacitance occurs between conductive
regions due to proximity and separation by
dielectric layers.
 Sources: Gate capacitance, interconnect
capacitance, junction capacitance.
 Equation: C = ε (A/d), for gate capacitance C_ox =
(ε_ox / t_ox) * A.
 Impact: Delays, increased dynamic power
consumption (P_dyn = C V² f).
Parasitic Inductance (L)

 Parasitic inductance arises in long interconnects due


to magnetic fields generated by current.
 Sources: Interconnect inductance, bonding wire
inductance.
 Equation: L ≈ (μ₀ / 2π) ln(2L/r).
 Impact: Signal ringing, crosstalk at high frequencies.
Combined Parasitic Effects

 In real circuits, parasitics combine to form RC and


RLC networks.
 RC Time Constant: τ = R × C.
 Impedance of RLC Network: Z = R + sL + 1/(sC),
where s is the Laplace variable.
Steps to Extract Parasitics

 1. Layout Analysis: Analyze geometries and


distances in the circuit layout.
 2. Field Solvers: Solve Maxwell’s equations for
accurate extraction of inductance and capacitance.
 3. RC/RLCK Extraction Tools: Tools like StarRC,
Quantus, and Calibre estimate parasitics.
 4. Post-Layout Simulation: Simulate the circuit with
extracted parasitics to evaluate performance.
Mitigation Techniques

 1. Increase spacing between interconnects to reduce


capacitance.
 2. Use shield wires to reduce crosstalk.
 3. Insert buffers to reduce RC delay.
 4. Use thicker oxide layers or high-k dielectrics to
reduce gate capacitance.
Conclusion

 Parasitics in CMOS circuits are inevitable but can be


accurately modeled and mitigated. Designers must
carefully manage layout and post-layout simulations
to ensure performance is not degraded.

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