We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
You are on page 1/ 9
Parasitics in CMOS
Circuits: Detailed Overview Understanding Parasitics and Mathematical Modeling Introduction
Parasitics in CMOS circuits arise
due to physical properties of materials, affecting performance metrics such as delays, power losses, and signal integrity. They include parasitic resistances, capacitances, and inductances, which must be carefully modeled and mitigated. Parasitic Resistance (R) Parasitic resistance occurs in metal interconnects and diffusion regions due to the finite resistivity of materials. Sources: Interconnect resistance, substrate resistance, and contact resistance. Equation: R = ρ (L/A) Impact: Delays, IR drops, power loss due to Joule heating (P = I²R). Parasitic Capacitance (C) Parasitic capacitance occurs between conductive regions due to proximity and separation by dielectric layers. Sources: Gate capacitance, interconnect capacitance, junction capacitance. Equation: C = ε (A/d), for gate capacitance C_ox = (ε_ox / t_ox) * A. Impact: Delays, increased dynamic power consumption (P_dyn = C V² f). Parasitic Inductance (L)
Parasitic inductance arises in long interconnects due
to magnetic fields generated by current. Sources: Interconnect inductance, bonding wire inductance. Equation: L ≈ (μ₀ / 2π) ln(2L/r). Impact: Signal ringing, crosstalk at high frequencies. Combined Parasitic Effects
In real circuits, parasitics combine to form RC and
RLC networks. RC Time Constant: τ = R × C. Impedance of RLC Network: Z = R + sL + 1/(sC), where s is the Laplace variable. Steps to Extract Parasitics
1. Layout Analysis: Analyze geometries and
distances in the circuit layout. 2. Field Solvers: Solve Maxwell’s equations for accurate extraction of inductance and capacitance. 3. RC/RLCK Extraction Tools: Tools like StarRC, Quantus, and Calibre estimate parasitics. 4. Post-Layout Simulation: Simulate the circuit with extracted parasitics to evaluate performance. Mitigation Techniques
1. Increase spacing between interconnects to reduce
capacitance. 2. Use shield wires to reduce crosstalk. 3. Insert buffers to reduce RC delay. 4. Use thicker oxide layers or high-k dielectrics to reduce gate capacitance. Conclusion
Parasitics in CMOS circuits are inevitable but can be
accurately modeled and mitigated. Designers must carefully manage layout and post-layout simulations to ensure performance is not degraded.