Magnesium selenide
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| Systematic IUPAC name
Magnesium selenide | |
| Identifiers | |
3D model (JSmol)
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| ECHA InfoCard | 100.013.820 |
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PubChem CID
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CompTox Dashboard (EPA)
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| Properties | |
| MgSe | |
| Molar mass | 103.27 g/mol[1] |
| Density | 4.21 g/cm3 (rock-salt)[2] 3.32 g/cm3 (zincblende)[1] |
| Melting point | 1,290 °C; 2,350 °F; 1,560 K[1] |
| Band gap | 3.9 eV (rock-salt) (300 K) 4.0 eV (zincblende) (300 K) |
| Structure | |
| Rock-salt (cubic) Zincblende (cubic) Wurtzite (hexagonal) | |
| Related compounds | |
Other anions
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Magnesium oxide Magnesium sulfide Magnesium telluride |
Other cations
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Cadmium selenide Mercury selenide Zinc selenide |
Related compounds
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Magnesium zinc selenide Cadmium magnesium selenide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Magnesium selenide is an inorganic compound with the chemical formula MgSe. It contains magnesium and selenium in a 1:1 ratio. It belongs to the II-VI family of semiconductor compounds.
Structure
[edit]Three crystal structures for MgSe have been experimentally characterized. The rock-salt structure is considered to be the most stable crystal structure that has been observed in bulk samples of MgSe, and a cubic lattice constant of 0.55 nm was deduced for this structure.[2] Although attempts at preparing pure zincblende MgSe have been unsuccessful,[3] the lattice constant of zincblende MgSe has been extrapolated from epitaxial thin films of zincblende MgxZn1-xSySe1-x and MgxZn1-xSe grown on gallium arsenide, the latter of which was prepared with a high magnesium content (up to 95% Mg, i.e., Mg0.95Zn0.05Se).[3][4] There is good agreement between these and other extrapolations that the lattice constant of pure zincblende MgSe is 0.59 nm.[1][2] The wurtzite structure of MgSe has been observed, but it is unstable and slowly converts to the rock-salt structure.[5]
NiAs- and FeSi-type crystal structures of MgSe are predicted to form by subjecting the rock-salt crystal structure to extremely high pressures.[2]
Electronic properties
[edit]Both rock-salt and zincblende MgSe are semiconductors. On the basis of different extrapolations, a room temperature bandgap of 4.0 eV has been recommended for zincblende MgSe.[1][2] A room temperature bandgap of 3.9 eV was determined for rock-salt MgSe.[2][3]
Preparation
[edit]Thin films of amorphous, wurtzite and rock-salt MgSe have been prepared by vacuum deposition of Mg and Se at cryogenic temperatures, followed by heating and annealing.[5] Compound semiconductor alloys of MgSe, such as MgxZn1-xSe, have been prepared by molecular beam epitaxy.[3][4]
Reactions
[edit]Samples of pure MgSe and Mg-rich MgxZn1-xSe (x > 0.7) readily react with water and oxidize in air.[2][3]
References
[edit]- ^ a b c d e Adachi, S., ed. (2004). "Zincblende Magnesium Selenide (β-MgSe)". Handbook on Physical Properties of Semiconductors. Kluwer Academic Publishers. pp. 37–50. doi:10.1007/1-4020-7821-8_3. ISBN 978-1-4020-7820-0.
- ^ a b c d e f g h Madelung, O., Rössler, U., Schulz, M., eds. (1999). "Magnesium oxide (MgO) physical properties (MgSe)". II-VI and I-VII Compounds; Semimagnetic Compounds. Landolt-Börnstein - Group III Condensed Matter. Vol. 41B. Springer-Verlag. pp. 1–8. doi:10.1007/10681719_218. ISBN 978-3-540-64964-9.
- ^ a b c d e Jobst, B., Hommel, D., Lunz, U., Gerhard, T., Landwehr, G. (1996). "E0 band-gap energy and lattice constant of ternary Zn1−xMgxSe as functions of composition". Applied Physics Letters. 69 (1): 97–99. doi:10.1063/1.118132. ISSN 1077-3118.
- ^ a b Okuyama, H., Nakano, K., Miyajima, T., Akimoto, K. (1992). "Epitaxial growth of ZnMgSSe on GaAs substrate by molecular beam epitaxy". Journal of Crystal Growth. 117 (1–4): 139–143. Bibcode:1992JCrGr.117..139O. doi:10.1016/0022-0248(92)90732-X. ISSN 0022-0248. S2CID 97851344.
- ^ a b Mittendorf, H. (1965). "Röntgenographische und optische Untersuchungen aufgedampfter Schichten aus Erdalkalichalkogeniden". Zeitschrift für Physik (in German). 183 (2): 113–129. Bibcode:1965ZPhy..183..113M. doi:10.1007/BF01380788. ISSN 1434-6001. S2CID 121137813.