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    Switching (30V, 9A) : RSS090N03

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    uim
    This datasheet summarizes the specifications and characteristics of the RSS090N03 transistor. It is a silicon N-channel MOSFET with a maximum drain-source voltage of 30V and drain current of 9A, intended for use in power switching and DC/DC converter applications. The document provides detailed electrical parameter ratings and test conditions, as well as graphs of key characteristics like capacitance, switching times, and on-state resistance over variations in voltage, current, and temperature.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Switching (30V, 9A) : RSS090N03

    Uploaded by

    uim
    149 views4 pages
    This datasheet summarizes the specifications and characteristics of the RSS090N03 transistor. It is a silicon N-channel MOSFET with a maximum drain-source voltage of 30V and drain current of 9A, intended for use in power switching and DC/DC converter applications. The document provides detailed electrical parameter ratings and test conditions, as well as graphs of key characteristics like capacitance, switching times, and on-state resistance over variations in voltage, current, and temperature.

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    rss090n03

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    This datasheet summarizes the specifications and characteristics of the RSS090N03 transistor. It is a silicon N-channel MOSFET with a maximum drain-source voltage of 30V and drain current of 9A, intended for use in power switching and DC/DC converter applications. The document provides detailed electrical parameter ratings and test conditions, as well as graphs of key characteristics like capacitance, switching times, and on-state resistance over variations in voltage, current, and temperature.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    149 views4 pages

    Switching (30V, 9A) : RSS090N03

    Uploaded by

    uim
    This datasheet summarizes the specifications and characteristics of the RSS090N03 transistor. It is a silicon N-channel MOSFET with a maximum drain-source voltage of 30V and drain current of 9A, intended for use in power switching and DC/DC converter applications. The document provides detailed electrical parameter ratings and test conditions, as well as graphs of key characteristics like capacitance, switching times, and on-state resistance over variations in voltage, current, and temperature.

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    RSS090N03

    Transistors

    Switching (30V, 9A)


    RSS090N03
    zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Units : mm)
    SOP8
    (8)

    5.00.2
    (5)

    6.00.3 3.90.15

    1.50.1 0.15

    zApplication Power switching, DC/DC converter.

    1.27

    0.40.1 0.1 Each lead has same dimensions

    zStructure Silicon N-channel MOS FET

    zAbsolute maximum ratings (Ta = 25C)


    Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP Is Isp PD Tch Tstg Limits 30 20 9.0 36 1.6 6.4 2 150 55 to +150 Unit V V A A A A W

    zEquivalent circuit
    (8) (7) (6) (5) (8) (7) (6) (5)

    Max.1.75

    0.50.1
    (1) (4)

    0.20.1

    1
    (2) (3) (4)

    (1) (2) (3) (4)

    Total Power Dissipation (TC=25C) Channel Temperature Storage Temperature


    Pw10s, Duty cycle1%

    (1)

    C C

    1 ESD Protection Diode. 2 Body Diode.

    (1) (2) (3) (4) (5) (6) (7) (8)

    Source Source Source Gate Drain Drain Drain Drain

    A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded.

    zThermal resistance (Ta = 25C)


    Parameter Channel to Ambient Symbol Rth (ch-A) Limits 62.5 Unit

    C / W

    1/3

    RSS090N03
    Transistors
    zElectrical characteristics (Ta = 25C)
    Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
    Pulsed

    Symbol
    IGSS V (BR)DSS IDSS VGS (th) RDS (on) l Yfs l Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

    Min.
    30 1.0 6.0

    Typ.
    11 15 17 810 225 160 10 13 46 15 11 2.5 4.5

    Max.
    10 1 2.5 15 22 24 15

    Unit
    A V A V m

    Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9A, VGS=10V ID=9A, VGS=4.5V ID=9A, VGS=4V ID=9A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.33 RGS=10 VDD=15V VGS=5V ID=9A

    S pF pF pF ns ns ns ns nC nC nC

    zBody diode characteristics (Source-Drain Characteristics) (Ta = 25C)


    Parameter Forward Voltage
    Pulsed

    Symbol VSD

    Min.

    Typ.

    Max. 1.2

    Unit V

    Test Conditions Is=6.4A, VGS=0V

    2/3

    RSS090N03
    Transistors
    zElectrical characteristic curves
    10000
    GATE-SOURCE VOLTAGE: VGS (V)

    Ta=25C f=1MHz VGS=0V


    Ciss

    10000

    CAPACITANCE : C (pF)

    SWITCHING TIME : t (ns)

    1000

    tf td(off)

    Ta=25C VDD=15V VGS=10V RG=10 Pulsed

    1000 Coss

    Ta=25 C 7 VDD=15V ID=9A 6 RG=10 Pulsed 5 4 3 2 1 0 0 2 4 6 8 10 12

    100

    Crss 100

    td(on)

    10
    tr

    10 0.01

    0.1

    10

    100

    1 0.01

    0.1

    10

    100

    DRAIN-SOURCE VOLTAGE : VDS (V)

    DRAIN CURRENT : I D (A)

    TOTAL GATE CHANGE: Qg (nC)

    Fig.1 Typical Capacitance vs. Drain-Source Voltage

    Fig.2 Switching Characteristics

    Fig.3 Dynamic Input Characteristics

    10
    STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m)

    100

    Ta=25 C pulsed
    SOURCE CURRENT : Is (A)

    100

    VGS=0V Pulsed Ta=25C 25C 75C 125C

    DREIN CURRENT : ID(A)

    ID=9A

    10

    0.1 Ta=125C 75C 25C 25C

    50

    0.01

    ID=4.5A

    0.1

    VDS=10V 0.001 Pulsed 0.0 0.5 1.0

    1.5

    2.0

    2.5

    3.0

    3.5

    0 0

    0.01

    10

    12

    14

    16

    0.5

    1.0

    1.5

    GATE - SOURCE VOLTAGE : VGS(V)

    GATE-SOURCE VOLTAGE : VGS (V)

    SOURCE-DRAIN VOLTAGE : VSD(A)

    Fig.4 Typical Transfer Characteristics

    Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

    Fig.6 Source-Current vs. Source-Drain Voltage

    10000
    STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m)

    STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m)

    1000 Ta=125C 75C 25C 25C

    1000 Ta=125C 75C 25C 25C

    STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m)

    VGS=10V Pulsed

    10000

    VGS=4.5V Pulsed

    10000

    VGS=4V Pulsed

    1000 Ta=125C 75C 25C 25C

    100

    100

    100

    10

    10

    10

    1 0.1

    1 DRAIN CURRENT : I D(A)

    10

    1 0.1

    1 DRAIN CURRENT : I D(A)

    10

    1 0.1

    1 DRAIN CURRENT : I D(A)

    10

    Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (1)

    Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (2)

    Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (3)

    3/3

    This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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