2SK3603

2SK3603-01MR
FUJI POWER MOSFET
Super FAP-G Series

Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET

Outline Drawings (mm)
TO-220F
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg VISO Ratings 150 120 16 64 30 16 189 20 5 2.16 25 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W
Equivalent circuit schematic

Drain(D)
Gate(G) Source(S)
C C kVrms < < *1 L=1.08mH, Vcc=48V *2 Tch < 150C *3 I F -I D , -di/dt=50A/s, Vcc BV DSS , Tch < = = = 150C = *4 VDS < *5 VGS=-30V t=60sec f=60Hz = 150V
Electrical characteristics (Tc =25C unless otherwise specified)

Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=8A VGS=10V RGS=10 V CC =75V ID=16A VGS=10V L=100H Tch=25C IF=16A VGS=0V Tch=25C IF=16A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 79 12 760 130 6 12 2.8 22 6.2 21 9 6 1.10 0.13 0.59
Min.
150 3.0
Typ.
Max.
5.0 25 250 100 105 1140 195 9 18 4.2 33 9.3 31.5 13.5 9 1.65
Units
V V A nA m S pF
ns
nC
16
A V s C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
5.0 58.0
Units
C/W C/W
www.fujielectric.co.jp/denshi/scd
2SK3603-01MR
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=16A

300
30
25
250
20
200
PD [W]
EAV [mJ]
0 25 50 75 100 125 150
15
150
10
100
50
0 0 25 50 75 100 125 150
Tc [C]
starting Tch [C]
Typical Output Characteristics

ID=f(VDS):80s Pulse test,Tch=25C
60 100
Typical Transfer Characteristic

ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
50 20V 10V 8V
40
10
ID [A]
30
7.5V 7.0V
ID[A]
1 0.1 12 0 1 2 3 4 5 6 7 8 9 10 10
20 6.5V 10 6.0V VGS=5.5V 0 0 2 4 6 8
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
100 0.30
Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80s Pulse test, Tch=25C
VGS= 5.5V 6.0V 6.5V 7.0V 7.5V
0.25
8V
RDS(on) [ ]
10
0.20 10V 0.15
gfs [S]
0.10
20V
0.05
0.1 0.1
0.00 1 10 100
0 10 20 30 40
ID [A]
ID [A]
2SK3603-01MR
FUJI POWER MOSFET
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V

300 7.0 6.5 250 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A
max.
RDS(on) [ m ]
200
VGS(th) [V]
4.5 4.0 3.5 3.0 2.5 min.
150 max. 100 typ. 50
2.0 1.5 1.0 0.5
0 -50 -25 0 25 50 75 100 125 150
0.0 -50 -25 0 25 50 75 100 125 150
Tch [C]
Tch [C]
Typical Gate Charge Characteristics

VGS=f(Qg):ID=16A, Tch=25C
14 10
0
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
12 10 10
-1
Ciss
VGS [V]
6 4
Vcc= 75V 10
-2
C [nF]
Coss
Crss 2 0 0 10 20 30 40
-3
10
10
-1
10
10
10
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80s Pulse test,Tch=25C
100 10
3
Typical Switching Characteristics vs. ID

t=f(ID):Vcc=48V, VGS=10V, RG=10
tf 10 10
2
IF [A]
t [ns]
td(off) td(on)
10
tr
0.1 0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
10
10
-1
10
10
10
VSD [V]
ID [A]
2SK3603-01MR
Transient Thermal Impedance Zth(ch-c)=f(t):D=0
FUJI POWER MOSFET
10
10
Zth(ch-c) [C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
t [sec]
Maximum Avalanche Current Pulsewidth

10
2
IAV=f(tAV):starting Tch=25C. Vcc=48V
Single Pulse
Avalanche current IAV [A]
10
10
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]

2SK3603

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2SK3603-01MR

FUJI POWER MOSFET

Super FAP-G Series

N-CHANNEL SILICON POWER MOSFET

Maximum ratings and characteristicAbsolute maximum ratings

Equivalent circuit schematic

Electrical characteristics (Tc =25C unless otherwise specified)

FUJI POWER MOSFET

Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=16A

0 0 25 50 75 100 125 150

starting Tch [C]

Typical Output Characteristics

Typical Transfer Characteristic

20 6.5V 10 6.0V VGS=5.5V 0 0 2 4 6 8

Typical Drain-Source on-state Resistance

0.20 10V 0.15

FUJI POWER MOSFET

Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V

Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A

4.5 4.0 3.5 3.0 2.5 min.

150 max. 100 typ. 50

2.0 1.5 1.0 0.5

0 -50 -25 0 25 50 75 100 125 150

0.0 -50 -25 0 25 50 75 100 125 150

Typical Gate Charge Characteristics

Typical Capacitance C=f(VDS):VGS=0V,f=1MHz

Typical Forward Characteristics of Reverse Diode

Typical Switching Characteristics vs. ID

FUJI POWER MOSFET

Maximum Avalanche Current Pulsewidth

IAV=f(tAV):starting Tch=25C. Vcc=48V

Avalanche current IAV [A]

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