Datasheet

Si2308DS
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
60
rDS(on) (W)
ID (A)
0.16 @ VGS = 10 V
2.0
0.22 @ VGS = 4.5 V
1.7
D 100% Rg Tested
TO-236
(SOT-23)
1
3
Top View
Si2308DS (A8)*
*Marking Code
Ordering Information: Si2308DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
TA = 70_C
Pulsed Drain Currentb
IDM
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
PD
TA = 70_C
Operating Junction and Storage Temperature Range
Unit
V
2.0
1.6
10
1.0
1.25
0.80
TJ, Tstg
- 55 to 150
_C
Symbol
Maximum
Unit
THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Ambientc
RthJA
100
166
_C/W
Notes
a. Surface Mounted on FR4 Board, t = v5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70797
S-31725Rev. B, 18-Aug-03
www.vishay.com
Si2308DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, ID = 250 mA
1.5
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 60 V, VGS = 0 V
0.5
VDS = 60 V, VGS = 0 V, TJ = 55_C
10
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On State Drain Currenta

On-State
ID(on)
D( )
Drain Source On-State

Drain-Source
On State Resistancea
Forward Transconductancea
Diode Forward
Voltagea
VDS w 4.5 V, VGS = 10 V
VDS w 4.5 V, VGS = 4.5 V
mA
VGS = 10 V, ID = 2.0 A
0.125
0.16
VGS = 4.5 V, ID = 1.7 A
0.155
0.22
gfs
VDS = 4.5 V, ID = 2.0 A
4.6
VSD
IS = 1 A, VGS = 0 V
0.77
1.2
4.8
10
rDS(on)
nA
W
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 30 V, VGS = 10 V, ID = 2.0 A
0.8
nC
1.0
Gate Resistance
Rg
Input Capacitance
Ciss
0.5
3.3
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
15
td(on)
15
10
20
17
35
15
240
VDS = 25 V,, VGS = 0 V,, f = 1 MHz
50
pF
p
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
VDD = 30 V, RL = 30 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com

S-31725Rev. B, 18-Aug-03
Si2308DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
12
Transfer Characteristics
12
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 10 thru 5 V
4V
3V
3
TC = 125_C
25_C
1, 2 V
0
0
0
10
VDS - Drain-to-Source Voltage (V)
Capacitance
400
C - Capacitance (pF)
0.8
0.6
0.4
300
Ciss
200
100
VGS = 4.5 V
0.2
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.0
r DS(on) - On-Resistance ( W )
- 55_C
Coss
Crss
VGS = 10 V
0.0
0
0
12
Gate Charge
1.8
r DS(on) - On-Resistance (W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
2.0
VDS = 30 V
ID = 2.0 A
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
10
12
On-Resistance vs. Junction Temperature

VGS = 10 V
ID = 2.0 A
1.6
1.4
1.2
1.0
0.8
0
0
Qg - Total Gate Charge (nC)

S-31725Rev. B, 18-Aug-03
0.6
- 50
- 25
25
50
75
100
125
150
TJ - Junction Temperature (_C)

www.vishay.com
Si2308DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
10
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
0.5
TJ = 150_C
TJ = 25_C
0.4
0.3
ID = 2.0 A
0.2
0.1
0.0
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
10
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
12
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
9
- 0.0
- 0.2
- 0.4
3
- 0.6
- 0.8
- 50
- 25
25
50
75
100
125
150
0.01
0.1
TJ - Temperature (_C)
100
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient

Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
10
100
500
Square Wave Pulse Duration (sec)
www.vishay.com

S-31725Rev. B, 18-Aug-03

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Si2308DS

N-Channel 60-V (D-S) MOSFET

0.22 @ VGS = 4.5 V

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Continuous Drain Current (TJ = 150_C)a

Pulsed Drain Currentb

Continuous Source Current (Diode Conduction)a

Maximum Power Dissipationa

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

VDS = VGS, ID = 250 mA

VDS = 0 V, VGS = "20 V

VDS = 60 V, VGS = 0 V, TJ = 55_C

On State Drain Currenta

Drain Source On-State

VDS w 4.5 V, VGS = 10 V

VDS w 4.5 V, VGS = 4.5 V

VGS = 4.5 V, ID = 1.7 A

VDS = 4.5 V, ID = 2.0 A

VDS = 30 V, VGS = 10 V, ID = 2.0 A

Reverse Transfer Capacitance

Document Number: 70797

I D - Drain Current (A)

I D - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

V GS - Gate-to-Source Voltage (V)

VDS - Drain-to-Source Voltage (V)

ID - Drain Current (A)

On-Resistance vs. Junction Temperature

Qg - Total Gate Charge (nC)

TJ - Junction Temperature (_C)

On-Resistance vs. Gate-to-Source Voltage

I S - Source Current (A)

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

Single Pulse Power

V GS(th) Variance (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient

Square Wave Pulse Duration (sec)

Document Number: 70797

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