Si2301ADS: Vishay Siliconix

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Si2301ADS

New Product

Vishay Siliconix

P-Channel 2.5-V (G-S) MOSFET


PRODUCT SUMMARY
VDS (V)
20

rDS(on) (W)
0.130 @ VGS = 4.5 V 0.190 @ VGS = 2.5 V

ID (A)b
2.0 1.6

TO-236 (SOT-23)

1 3 D

Top View Si2301DS (1A)* *Marking Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS 0.75 0.9 0.57 55 to 150

Symbol
VDS VGS

5 sec
20 "8 2.0 1.6 10

Steady State

Unit
V

1.75 1.4 A 0.6 0.7 0.45 W _C

THERMAL RESISTANCE RATINGS


Parameter
Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71835 S-20617Rev. B, 29-Apr-02 www.vishay.com RthJA

Symbol

Typical
115 140

Maximum
140 175

Unit
_C/W

Si2301ADS
Vishay Siliconix
New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)


Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS v 5 V, VGS = 4.5 V ID(on) VDS v 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 2.8 A rDS(on) gfs VSD VGS = 2.5 V, ID = 2.0 A VDS = 5 V, ID = 2.8 A IS = 0.75 A, VGS = 0 V 6 3 0.093 0.140 6.5 0.80 1.2 0.130 0.190 W S V A 20 0.45 0.95 "100 1 10 mA V nA

Symbol

Test Conditions

Min

Typ

Max

Unit

On-State Drain Currenta

Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage

Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 6 V, VGS = 0, f = 1 MHz VDS = 6 V, VGS = 4.5 V ID ^ 2.8 A 4.2 0.8 0.8 500 115 62 pF 10 nC

Switchingc
td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 VDD = 6 V, RL = 6 W ID ^ 1.0 A, VGEN = 4.5 V RG = 6 W 6 30 25 10 25 60 ns 70 60

Turn-Off Time

www.vishay.com

Document Number: 71835 S-20617Rev. B, 29-Apr-02

Si2301ADS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10

Vishay Siliconix

Output Characteristics
VGS = 5, 4.5, 4, 3.5, 3 V

10

Transfer Characteristics

8 I D Drain Current (A)

2.5 V I D Drain Current (A)

TC = 55_C

25_C 6 125_C

2V

0, 0.5, 1 V

2 1.5 V 0 0.0

0 0 1 2 3 4 5

0.5

1.0

1.5

2.0

2.5

3.0

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current


0.6 800

Capacitance

0.5 r DS(on) On-Resistance ( W ) C Capacitance (pF) 600 Ciss

0.4

0.3 VGS = 2.5 V VGS = 4.5 V 0.1

400

0.2

200 Coss Crss

0.0 0 2 4 6 8 10

0 0 4 8 12 16 20

ID Drain Current (A)

VDS Drain-to-Source Voltage (V)

5 VDS = 10 V ID = 3.6 A V GS Gate-to-Source Voltage (V) 4

Gate Charge

1.6

On-Resistance vs. Junction Temperature


VGS = 4.5 V ID = 3.6 A

1.4 r DS(on) On-Resistance ( W ) (Normalized) 0 1 2 3 4 5

1.2

1.0

0.8

0.6 50

25

25

50

75

100

125

150

Qg Total Gate Charge (nC)

TJ Junction Temperature (_C)

Document Number: 71835 S-20617Rev. B, 29-Apr-02

www.vishay.com

Si2301ADS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10 0.6

On-Resistance vs. Gate-to-Source Voltage

0.5 1 I S Source Current (A) TJ = 150_C r DS(on) On-Resistance ( W )

0.4 ID = 3.6 A

0.1 TJ = 25_C

0.3

0.2

0.01

0.1

0.001 0 0.2 0.4 0.6 0.8 1.0 1.2

0.0 0 2 4 6 8

VSD Source-to-Drain Voltage (V)

VGS Gate-to-Source Voltage (V)

Threshold Voltage
0.4 10

Single Pulse Power

0.3

V GS(th) Variance (V)

0.2 ID = 250 mA 0.1 Power (W) 6

0.0 2

0.1

0.2 50

25

25

50

75

100

125

150

0 0.01

0.10

1.00

10.00

100.00

1000.00

TJ Temperature (_C)

Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient


2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance

0.2
Notes:

0.1 0.1 0.05 0.02

PDM t1 t2 1. Duty Cycle, D = t1 t2

2. Per Unit Base = RthJA = 62.5_C/W 3. TJM TA = PDMZthJA(t)

Single Pulse 0.01 104 103 102 101 1

4. Surface Mounted

10

100

600

Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71835 S-20617Rev. B, 29-Apr-02

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