Si2301ADS: Vishay Siliconix
Si2301ADS: Vishay Siliconix
Si2301ADS: Vishay Siliconix
New Product
Vishay Siliconix
rDS(on) (W)
0.130 @ VGS = 4.5 V 0.190 @ VGS = 2.5 V
ID (A)b
2.0 1.6
TO-236 (SOT-23)
1 3 D
Symbol
VDS VGS
5 sec
20 "8 2.0 1.6 10
Steady State
Unit
V
Symbol
Typical
115 140
Maximum
140 175
Unit
_C/W
Si2301ADS
Vishay Siliconix
New Product
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 6 V, VGS = 0, f = 1 MHz VDS = 6 V, VGS = 4.5 V ID ^ 2.8 A 4.2 0.8 0.8 500 115 62 pF 10 nC
Switchingc
td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 VDD = 6 V, RL = 6 W ID ^ 1.0 A, VGEN = 4.5 V RG = 6 W 6 30 25 10 25 60 ns 70 60
Turn-Off Time
www.vishay.com
Si2301ADS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
Vishay Siliconix
Output Characteristics
VGS = 5, 4.5, 4, 3.5, 3 V
10
Transfer Characteristics
TC = 55_C
25_C 6 125_C
2V
0, 0.5, 1 V
2 1.5 V 0 0.0
0 0 1 2 3 4 5
0.5
1.0
1.5
2.0
2.5
3.0
Capacitance
0.4
400
0.2
0.0 0 2 4 6 8 10
0 0 4 8 12 16 20
Gate Charge
1.6
1.2
1.0
0.8
0.6 50
25
25
50
75
100
125
150
www.vishay.com
Si2301ADS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10 0.6
0.4 ID = 3.6 A
0.1 TJ = 25_C
0.3
0.2
0.01
0.1
0.0 0 2 4 6 8
Threshold Voltage
0.4 10
0.3
0.0 2
0.1
0.2 50
25
25
50
75
100
125
150
0 0.01
0.10
1.00
10.00
100.00
1000.00
TJ Temperature (_C)
Time (sec)
0.2
Notes:
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71835 S-20617Rev. B, 29-Apr-02
Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.
Alternative Proxies: