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    4 Finfets

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    This document discusses FinFET transistors as an alternative to planar MOSFETs. FinFETs suppress short channel effects and allow for better driving current and more compact designs than planar MOSFETs. There are two main variations of FinFETs: tri-gate FinFETs which have three gates to increase surface area for electron travel, and gate-all-around FETs where the gate surrounds the channel on all sides. While FinFETs offer advantages, current performance is still poor and only works at high voltages due to fabrication challenges like large pits and holes in the silicon fins. FinFETs require more fabrication steps than planar MOSFETs but use less materials, so they can be more economical due

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    4 Finfets

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    reza12368
    51 views14 pages
    This document discusses FinFET transistors as an alternative to planar MOSFETs. FinFETs suppress short channel effects and allow for better driving current and more compact designs than planar MOSFETs. There are two main variations of FinFETs: tri-gate FinFETs which have three gates to increase surface area for electron travel, and gate-all-around FETs where the gate surrounds the channel on all sides. While FinFETs offer advantages, current performance is still poor and only works at high voltages due to fabrication challenges like large pits and holes in the silicon fins. FinFETs require more fabrication steps than planar MOSFETs but use less materials, so they can be more economical due

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    This document discusses FinFET transistors as an alternative to planar MOSFETs. FinFETs suppress short channel effects and allow for better driving current and more compact designs than planar MOSFETs. There are two main variations of FinFETs: tri-gate FinFETs which have three gates to increase surface area for electron travel, and gate-all-around FETs where the gate surrounds the channel on all sides. While FinFETs offer advantages, current performance is still poor and only works at high voltages due to fabrication challenges like large pits and holes in the silicon fins. FinFETs require more fabrication steps than planar MOSFETs but use less materials, so they can be more economical due

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    51 views14 pages

    4 Finfets

    Uploaded by

    reza12368
    This document discusses FinFET transistors as an alternative to planar MOSFETs. FinFETs suppress short channel effects and allow for better driving current and more compact designs than planar MOSFETs. There are two main variations of FinFETs: tri-gate FinFETs which have three gates to increase surface area for electron travel, and gate-all-around FETs where the gate surrounds the channel on all sides. While FinFETs offer advantages, current performance is still poor and only works at high voltages due to fabrication challenges like large pits and holes in the silicon fins. FinFETs require more fabrication steps than planar MOSFETs but use less materials, so they can be more economical due

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    Yu Sui, Zhenghong Sun, Yi Wang

    What is FinFET

    Planar MOSFET[1]

    FinFet[2]

    Why FinFET
    Suppress short channel affect Better in driving current More compact

    Figure . FinFET typical layout and schematic cross sectional structures.

    Variations of Finfet:
    1. tri-gate finfet These transistors employ a single gate stacked on top of two vertical gates allowing for essentially three times the surface area for electrons to travel. 2. Gate-all-around(GAA) FETs Gate-all-around FETs are similar in concept to FinFETs except that the gate material surrounds the channel region on all sides.

    http://news.uns.purdue.edu/x/2009b/091110YeFinfets.doc.html

    Evaluation of FinFet
    The current performance is poor Conducted only in high voltage

    Reasons for poor performance


    Large pits and holes in the silicon fin and the source

    drain areas Fabrication part: photo resist alone is not a sufficient etch mask

    Cost of FinFET
    The total steps are more than usual MOSFET process, but the cost of material are smaller. Since it is more compact, using FinFET is economical.

    Perspective
    For future 22nm device, the FinFET is a great trial More tests should be conducted, and better fabrication

    technology is needed Inventing new device is always essential to enhance the circuit performance

    Reference
    [1] Slides from Prof. Robert Dick [2]http://en.wikipedia.org/wiki/File:Doublegate_FinFET.PNG [3]http://en.wikipedia.org/wiki/Multigate_device Design and Fabrication of Tri-Gated FinFET, Mohammed R.Rahman, 22nd Annual Microelectronic Engineering Conference, May 2004 [4]http://news.uns.purdue.edu/x/2009b/091110YeFinfets.doc.ht ml [5] http://www.electroiq.com/index/display/semiconductorsarticle-display/327683/articles/solid-state-technology/volume51/issue-5/features/nanotechnology/fully-gate-all-aroundsilicon-nanowire-cmos-devices.html

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