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    Silicon Schottky Diode: Type Package Configuration Marking

    Uploaded by

    Ioan Tivga
    This document provides specifications for the BAT14-03W silicon Schottky diode. The diode features low noise figure and is suitable for mixer applications up to 12 GHz. Key specifications include: - Maximum ratings of 4V reverse voltage, 90mA forward current, 100mW power dissipation, and storage temperature range of -55 to 150°C. - Electrical characteristics at 25°C of a breakdown voltage of 5.5V, forward voltages of 0.43/0.48V at 1/10mA, and a diode capacitance of 0.35pF at 1MHz. - Graphs illustrate forward voltage and reverse current characteristics over temperature and as a function of forward/

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    Download as PDF, TXT or read online from Scribd

    Silicon Schottky Diode: Type Package Configuration Marking

    Uploaded by

    Ioan Tivga
    18 views3 pages
    This document provides specifications for the BAT14-03W silicon Schottky diode. The diode features low noise figure and is suitable for mixer applications up to 12 GHz. Key specifications include: - Maximum ratings of 4V reverse voltage, 90mA forward current, 100mW power dissipation, and storage temperature range of -55 to 150°C. - Electrical characteristics at 25°C of a breakdown voltage of 5.5V, forward voltages of 0.43/0.48V at 1/10mA, and a diode capacitance of 0.35pF at 1MHz. - Graphs illustrate forward voltage and reverse current characteristics over temperature and as a function of forward/

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    Bat 14

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    This document provides specifications for the BAT14-03W silicon Schottky diode. The diode features low noise figure and is suitable for mixer applications up to 12 GHz. Key specifications include: - Maximum ratings of 4V reverse voltage, 90mA forward current, 100mW power dissipation, and storage temperature range of -55 to 150°C. - Electrical characteristics at 25°C of a breakdown voltage of 5.5V, forward voltages of 0.43/0.48V at 1/10mA, and a diode capacitance of 0.35pF at 1MHz. - Graphs illustrate forward voltage and reverse current characteristics over temperature and as a function of forward/

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views3 pages

    Silicon Schottky Diode: Type Package Configuration Marking

    Uploaded by

    Ioan Tivga
    This document provides specifications for the BAT14-03W silicon Schottky diode. The diode features low noise figure and is suitable for mixer applications up to 12 GHz. Key specifications include: - Maximum ratings of 4V reverse voltage, 90mA forward current, 100mW power dissipation, and storage temperature range of -55 to 150°C. - Electrical characteristics at 25°C of a breakdown voltage of 5.5V, forward voltages of 0.43/0.48V at 1/10mA, and a diode capacitance of 0.35pF at 1MHz. - Graphs illustrate forward voltage and reverse current characteristics over temperature and as a function of forward/

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    BAT14...

    Silicon Schottky Diode DBS mixer applications up to 12 GHz Low noise figure Low barrier type
      
    1

    BAT14-03W

    ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Type BAT14-03W Package SOD323 Configuration single LS(nH) Marking 1.8 O/white

    Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol VR IF Ptot Tj Top Tstg Symbol RthJS Value Unit

    Diode reverse voltage Forward current Total power dissipation Junction temperature Operating temperature range Storage temperature
    Thermal Resistance Parameter TS

    4 90 100 150 -55 ... 125 -55 ... 150

    V mA mW C

    85 C

    1For

    calculation of RthJA please refer to Application Note Thermal Resistance

    Junction - soldering point1)

    Value

    Unit

    690

    K/W

    Feb-03-2003

    BAT14...
    Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 10 A Forward voltage IF = 1 mA IF = 10 mA
    AC Characteristics Diode capacitance VR = 0 , f = 1 MHz IF = 10mA / 50mA Differential forward resistance CT RF 0.22 5.5 0.35 pF

    Symbol min. V(BR) VF 0.36 0.48 4

    Values typ. max. -

    Unit

    0.43 0.55

    0.52 0.66

    Feb-03-2003

    BAT14...
    Diode capacitance CT = f = 1MHz
    0.5
    pF

    TA = Parameter
    10 1
    A

    0.4 10 0.35

    CT

    0.3 0.25 0.2 0.15 0.1 0.05 0 0


    V

    IR

    10 -1

    10 -2

    0.5

    1.5

    2.5

    3.5

    10 -3 1

    1.5

    2.5

    VF

    10
    mA

    10

    IF

    10

    10

    -1

    10

    -2

    0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

    Forward current IF =

    (V F)

    -40C 25C 85C 125C

    VF

    (VR )

    Reverse current IR =

    (VR)

    

    TA =125C

    TA =85C

    TA =25C

    3.5

    4.5

    5.5

    VR

    Feb-03-2003

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