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Ee141 hw6 sp10

This document contains a homework assignment with multiple problems related to CMOS logic circuits. It includes questions about pass transistor logic circuits, pass transistor gates with level restoration, and dynamic domino logic circuits. Students are asked to analyze the logic functions, propagation delays, transistor sizing, static power dissipation, and voltage thresholds of the various circuit designs. Circuit parameters like threshold voltages, transistor widths and lengths, and parasitic capacitances are provided.

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0% found this document useful (0 votes)
191 views3 pages

Ee141 hw6 sp10

This document contains a homework assignment with multiple problems related to CMOS logic circuits. It includes questions about pass transistor logic circuits, pass transistor gates with level restoration, and dynamic domino logic circuits. Students are asked to analyze the logic functions, propagation delays, transistor sizing, static power dissipation, and voltage thresholds of the various circuit designs. Circuit parameters like threshold voltages, transistor widths and lengths, and parasitic capacitances are provided.

Uploaded by

Brenda Palmer
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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UNIVERSITY OF CALIFORNIA, BERKELEY

College of Engineering Department of Electrical Engineering and Computer Sciences


Jan M. Rabaey Homework #6
Due Friday, March 19 , 5pm, box in 240 Cory

EECS 141 (SP10)

[PROBLEM 1] Pass Transistor Logic Consider the pass transistor logic implemented in a CMOS process as shown in Fig.1. Assume that VTN=|VTP|=0.3V. Ignore body effect, but dont ignore VT drop in pass transistor logic. VDD =1.2V (45 pts)

A C A B M1 S1

B M2 S2

M3 S3 M4 S4

Sinv

OUT

Fig.1. (a) What is the logic function performed by this circuit? (5 pts) (b) What is the purpose of having the two branches controlled by A and B ? (5 pts) (c) If OUT drives a large CL, derive an approximate expression for the worst-case propagation delay of the whole circuit. Assume the following parameters for the minimum-size NMOS and PMOS transistors, S=1: Reqn=10k, Reqp=20k, Cgs=Cgd=1fF; Cdb=Csb=1fF. The inverter is symmetrical sized, i.e. PMOS:NMOS=2:1. Ignore the miller effect at input and output of the inverter. Ignore overlap capacitances and feed-through from the gates of the switching transistors to the circuit nodes. (10 pts) (Hint: you may model the circuit as RC networks. Provide the delay expression in terms of Req and parasitic Cgs and Cgd of a transistor, i.e. use simple pass transistor model in prob.1(b) of HW#5.) (d) Explain qualitatively how you would like to size the pass transistors, S1 and S2. Derive relationship transistors size. (5pts) (e) Discuss the sources of static power dissipation in the circuit. (5pts) (f) Propose two circuit modifications to improve the performance and power dissipation of the circuit, and discuss the pros and cons of each of them. (5pts)

(g) What are the impacts on the performance and power consumption of this circuit if the threshold voltage of M1, M2, M3, and M4 is lowered? Assume that inverter has the same threshold voltage for nMOS and pMOS. (5pts) (h) What is minimum supply voltage for which this circuit is still operational? Show your line of thought. Assume that the inverter switches only when input is VDD/2.(5pts) [PROBLEM 2] Pass transistor gate with level restorer Consider the circuit in Fig.2. Let Cx = 50fF. M1 has W/L=0.5/0.25, and M2 has W/L = 0.5/0.5. Assume the output inverter doesnt switch until its input equals VDD/2 (VDD =2.5V). Use unified model. (30pts) NMOS: VTn = 0.5V, kn = 100A/V2, VD,VSAT = 0.6V, =0, =0.4V1/2, 2F = 0.6V PMOS: VTp = 0.5V, kp = 40A/V2, VD,VSAT = 1V, =0, =-0.4V1/2, 2F = 0.6V

VDD B A M1 CX M2 X

VDD

M3 OUT M4

Fig.2. (a) What is the function of M2? (5pts) (b) Describe qualitatively how this circuit operates for HL and LH input transitions. B is at 2.5V (5pts) (c) How long will it take M1 to pull node x down from 2.5V to 1.25V if 2.5V to 0V step input is applied to A, and B is at 2.5V? (5pts) (d) How long will it take M1 to pull node x up from 0 to 1.25V if 0V to 2.5V step input is applied to A, and B is at 2.5V? (5pts) (e) What is the minimum value of VB(Voltage of B input) necessary to pull Vx down to 1.25V when VA=0V? (5pts)

(f) If node B is at 2.5V, what is the maximum size of M2 such that the circuit still operates as intended? (5pts) [PROBLEM 3] Dynamic Logic Consider the domino circuit in Fig.3. Assuming that all inputs of the circuit shown in Fig.3 are initially Low (0V) during the pre-charge phase and that all internal nodes are at 0V. Ignore all other parasitic capacitance except C1, C2, and C3. It is given that VDD=2.5V, Vtn0=0.5V, 2F=0.6V and =0.4V0.5. (25pts)

VDD OUT CX=20fF A B C M1 M2 M3 C1=5fF C2=5fF C3=5fF

Fig.3. (a) Calculate the voltage drop on Vout (OUT node voltage) if A changes to High (2.5V) during the evaluation phase. (10pts) (Hint: Dont forget the body effect.) (b) Calculate the voltage drop on VOUT (OUT node voltage) if both A and B change to High (VDD=2.5V) (5pts). (c) What is the maximum number of transistors that can be connected in series to M1 and M2 (including M1 and M2, excluding M3) if the output should not fall below 0.9V during the evaluation phase? Assume that each one of the new transistors has the same intrinsic capacitance (to ground) as M1 and M2 (C=5fF). (10pts)

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