Introduction To VLSI Design: Etching Silicon Ingot
Introduction To VLSI Design: Etching Silicon Ingot
Introduction To VLSI Design: Etching Silicon Ingot
1 cm
Wafers
Chip or Die
Overview
VLSI - Very Large Scale Integration A VLSI device contains more than 106 devices (transistors or logic gates) Currently, VLSI devices containing in excess of 108 transistors on a 1 cm2 die, can be manufactured The design and production of such devices is highly technical and involves many engineering disciplines.....
Glossary
Integrated Circuit
A combination of interconnected circuit elements inseparably associated on or within a continuous substrate
Substrate
The supporting material upon or within which an IC is fabricated, or to which an IC is attached
Monolithic IC
An IC whose elements are formed in place upon or within a semiconductor substrate with at least one of the elements formed within the substrate
Wafer
Basic physical unit used in processing, contains a large number of identical ICs. Typically 6 to 10 inches in diameter, recently 30 cm (12 inch) wafers have been produced
Chip(Die or Bar)
One of the repeated ICs on a wafer. A typical wafer may accommodate several hundred ICs depending on the area of the individual IC and the diameter of the wafer
Microelectronics
Inert Substrate Thick Film MOS Thin Film
NMOS
CMOS
electronics sand
idea
economics cash
Design funnel
software
Chip
W L 1 million
Complexity 1/Geometry
Moores Law
Gordon Moore, one of the co-founders of the Intel Corporation, projected that due to technological advances, the number of transistors on a chip would double about every 18 months.
Dimensions
The two most commonly used dimensions used in VLSI are the Micron and the Angstrom Microns are used to express the lateral dimensions of layout shapes Angstroms are used to express the vertical dimensions of layout shapes Angstrom Meter(m) Micron(u) Angstrom(A) 1010A 104A Micron 106u 10-4u Meter 10-6m 10-10m
W
Polysilicon
N+
N+
L
Oxide thickness (tox, typically 100A)
P-type substrate
Since the beginning of the IC era (1958), the minimum MOS length (L) and width (W), along with the oxide thickness (tox) have been reducing due to advances in manufacturing technology. For example, in 1980 a typical process feature size was 5 micron (L = W = 5u). Currently, state-of-the-art processes support sub-micron feature sizes such as 0.13 micron (130 nm or 1300A). The packing density is inversely proportional to the area of a MOS transistor (1/(W*L)): Thus: Density0.13 = 1,480 * Density5 !!!
Design Iteration
Library Cells
Generate Layout
Design Iteration
No
Results OK?
Yes
Synthesize Logic
Design Iteration
Insert Standard Cells and Custom Cells
Post-Layout Simulation
Library Cells
Includes parasitic delays
Commence Production
Results OK? No
Yes
Design Iteration