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    L 207

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    miltongrimi
    HiPerFREDTM Epitaxial Diode with soft recovery features A q International standard package Planar passivated chips Very short recovery time Extremely low switching losses low IRM-values soft recovery behaviour Epoxy meets UL 94V-0 TC = 25degC mounting torque typical Applications q Avalanche voltage rated for reliable operation soft reverse recovery for low EMI / RFI Low IRM reduces: - power dissipation within the diode - Turn

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    L 207

    Uploaded by

    miltongrimi
    180 views2 pages
    HiPerFREDTM Epitaxial Diode with soft recovery features A q International standard package Planar passivated chips Very short recovery time Extremely low switching losses low IRM-values soft recovery behaviour Epoxy meets UL 94V-0 TC = 25degC mounting torque typical Applications q Avalanche voltage rated for reliable operation soft reverse recovery for low EMI / RFI Low IRM reduces: - power dissipation within the diode - Turn

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    HiPerFREDTM Epitaxial Diode with soft recovery features A q International standard package Planar passivated chips Very short recovery time Extremely low switching losses low IRM-values soft recovery behaviour Epoxy meets UL 94V-0 TC = 25degC mounting torque typical Applications q Avalanche voltage rated for reliable operation soft reverse recovery for low EMI / RFI Low IRM reduces: - power dissipation within the diode - Turn

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    180 views2 pages

    L 207

    Uploaded by

    miltongrimi
    HiPerFREDTM Epitaxial Diode with soft recovery features A q International standard package Planar passivated chips Very short recovery time Extremely low switching losses low IRM-values soft recovery behaviour Epoxy meets UL 94V-0 TC = 25degC mounting torque typical Applications q Avalanche voltage rated for reliable operation soft reverse recovery for low EMI / RFI Low IRM reduces: - power dissipation within the diode - Turn

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    DSEP 60-06A DSEP 60-06AT

    HiPerFREDTM Epitaxial Diode


    with soft recovery
    Preliminary Data
    VRSM V 600 VRRM V 600 DSEP 60-06A DSEP 60-06AT Type
    A C

    IFAV = 60 A VRRM = 600 V trr = 35 ns


    TO-247 AD (A-Type) TO-268 AA (AT-Type)

    C A C (TAB)

    A A C (TAB)

    A = Anode, C = Cathode, TAB = Cathode

    Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight

    Conditions TVJ = TVJM TC = 110C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 1.6 A; L = 180 H VA = 1.5VR typ.; f = 10 kHz; repetitive

    Maximum Ratings 70 60 600 0.3 0.2 -55...+175 175 -55...+150 A A Features A


    q

    mJ A C C C W Nm g

    q q q q q q

    International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0

    TC = 25C mounting torque typical

    230 0.8...1.2 6

    Applications
    q

    q q

    Symbol IR x

    Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 60 A; TVJ = 150C TVJ = 25C

    Characteristic Values typ. max. 650 2.5 1.39 2.04 0.65 0.25 mA mA V V K/W K/W ns

    q q q

    VF y RthJC RthCH trr IRM

    Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders

    IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100C

    Advantages
    q

    35 8.3

    A
    q q

    Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch

    Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified

    Dimensions see outlines.pdf

    2000 IXYS All rights reserved

    1-2

    018

    IXYS reserves the right to change limits, test conditions and dimensions.

    DSEP 60-06A DSEP 60-06AT


    160 A 140 IF 120 4000 nC 3000

    TVJ= 100C VR = 300V

    80 A 60

    TVJ= 100C VR = 300V

    TVJ= 25C
    100

    Qr 2000

    TVJ=100C
    80

    IF=120A IF= 60A IF= 30A

    IRM 40

    IF=120A IF= 60A IF= 30A

    TVJ=150C
    60 40 20 0 0 1 VF 2 V 0 100 A/ms 1000 -diF/dt 0 0 200 400 1000 20

    ms 1000 600 A/ 800 -diF/dt

    Fig. 1 Forward current IF versus VF

    Fig. 2 Reverse recovery charge Qr versus -diF/dt


    140 ns 130

    Fig. 3 Peak reverse current IRM versus -diF/dt


    20 V VFR 15 1.6 s tfr 1.2

    2.0

    TVJ= 100C VR = 300V

    1.5 Kf 1.0

    trr 120 110

    tfr IF=120A IF= 60A IF= 30A

    VFR
    0.8

    10

    I RM
    100 0.5 5 0.4

    Qr

    90 80 0 0

    TVJ= 100C IF = 60A


    0 200 400 600 -diF/dt 800 A/ ms 1000 200 400 0.0 ms 1000 600 A/ 800 diF/dt

    0.0 0 40 80 120 C 160 TVJ

    Fig. 4 Dynamic parameters Qr, IRM versus TVJ


    1 K/W 0.1 ZthJC 0.01

    Fig. 5 Recovery time trr versus -diF/dt

    Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.0052 0.0003 0.0385

    0.001

    0.0001 0.00001

    DSEP 60-06A

    0.0001

    0.001

    0.01

    0.1 t

    Fig. 7 Transient thermal resistance junction to case


    018

    NOTE: Fig. 2 to Fig. 6 shows typical values

    2000 IXYS All rights reserved

    2-2

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