16TTS12

Bulletin I2115 rev.
D 12/98
SAFEIR Series 16TTS..

PHASE CONTROL SCR VT
Description/Features
The 16TTS.. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.
< 1.4V @ 10A
ITSM = 200A VRRM = 800 to 1600V
Output Current in Typical Applications Applications

Capacitive input filter TA = 55C, TJ = 125C, common heatsink of 1C/W
Single-phase Bridge
13.5
Three-phase Bridge Units

17 A
Major Ratings and Characteristics Characteristics

IT(AV) Sinusoidal waveform IRMS VRRM/VDRM ITSM VT dv/dt di/dt TJ range @ 10 A, TJ = 25C 16 up to 1600 200 1.4 500 150 - 40 to 125 A V A V V/s A/s C
Package Outline Units

A
16TTS..
10
TO-220AC
Also available in SMD-220 package (series 16TTS..S)
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16TTS.. SAFEIR Series

Bulletin I2115 rev. D 12/98
Voltage Ratings
VRRM, maximum Part Number peak reverse voltage V
16TTS08 16TTS12 16TTS16 800 1200 1600
VDRM , maximum peak direct voltage V

800 1200 1600
IRRM/IDRM 125C mA
10
Absolute Maximum Ratings

Parameters
IT(AV) Max. Average On-state Current IRMS ITSM I2 t Max. RMS On-state Current Max.Peak One Cycle Non-Repetitive Surge Current Max. I2 t for fusing
16TTS..
10 16 170 200 144 200
Units
A
Conditions
@ TC = 98 C, 180 conduction half sine wave
10ms Sine pulse, rated VRRMapplied 10ms Sine pulse, no voltage reapplied A2 s 10ms Sine pulse, rated VRRMapplied 10ms Sine pulse, no voltage reapplied A s
2
I t
2
Max. I t for fusing

2
2000 1.4 24.0 1.1 0.5 10 Typ. -100 Max. 100 150
t = 0.1 to 10ms, no voltage reapplied @ 10A, TJ = 25C TJ = 125C
VTM rt
Max. On-state Voltage Drop On-state slope resistance
V m V mA
VT(TO) Threshold Voltage IRM/IDM Max.Reverse and Direct Leakage Current IH Holding Current
TJ = 25 C TJ = 125 C
VR = rated VRRM/ VDRM
Anode Supply = 6V, Resistive load, Initial IT =1A mA 16TTS08, 16TTS12 16TTS16 mA V/s A/s Anode Supply = 6V, Resistive load
IL
Max. Latching Current
200 500 150
dv/dt Max. Rate of Rise of off-state Voltage di/dt Max. Rate of Rise of turned-on Current
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Triggering
Parameters
PGM Max. peak Gate Power PG(AV) Max. average Gate Power + IGM Max. paek positive Gate Current - VGM Max. paek negative Gate Voltage IGT Max. required DC Gate Current to trigger
16TTS..
8.0 2.0 1.5 10 90 60 35
Units
W
Conditions
A V mA Anode supply = 6V, resistive load, TJ = - 65C Anode supply = 6V, resistive load, TJ = 25C Anode supply = 6V, resistive load, TJ = 125C V Anode supply = 6V, resistive load, TJ = - 65C Anode supply = 6V, resistive load, TJ = 25C Anode supply = 6V, resistive load, TJ = 125C TJ = 125C, VDRM = rated value mA TJ = 125C, VDRM = rated value
VGT
Max. required DC Gate Voltage to trigger
3.0 2.0 1.0
VGD IGD
Max. DC Gate Voltage not to trigger Max. DC Gate Current not to trigger
0.2 2.0
Switching
Parameters
tgt trr tq
Typical turn-on time Typical reverse recovery time Typical turn-off time
16TTS..
0.9 4 110
Units
s TJ = 25C TJ = 125C
Conditions
Thermal-Mechanical Specifications
Parameters
TJ T stg Max. Junction Temperature Range Max. Storage Temperature Range
16TTS..
- 40 to 125 - 40 to 125 1.3 62 0.5 2 (0.07) Min. Max. 6 (5) 12 (10)
Units
C
Conditions
RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Typ. Thermal Resistance Case to Heatsink wt T Approximate Weight Mounting Torque
C/W
DCoperation
Mountingsurface,smoothandgreased g (oz.) Kg-cm (Ibf-in)
Case Style
TO-220AC
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Maximum Allowable Case Temperature (C)
120 115 110 105 100 95 90 0 2
16TTS.. Series R thJC (DC) = 1.3 C/W
Maximum Allowable Case Temperature (C)
125
125 120 115

Conduction Period
16TTS.. Series R thJC(DC) = 1.3 C/W
Conduction Angle
110 105 100 95 90 0 2 4 6 8 10 12 14 16 Average On-state Current (A) 30
30 60 90 120 180 4 6 8 10 12
60 90 120 180 DC
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics

Maximum Average On-state Power Loss (W)
Max imum Average On-state Power Loss (W)
Fig. 2 - Current Rating Characteristics

25 DC 180 120 90 60 30
18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 Average On-state Current (A)

Conduction Angle
180 120 90 60 30 RMS Limit
20
15
RMS Limit 10
Conduction Period
16TTS.. Series T J = 125C
16TTS.. Series T J = 125C 0 2 4 6 8 10 12 14 16 18
0 Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics

Peak Half Sine Wave On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics

Peak Half Sine Wave Forward Current (A) 200 180 160 140 120 100
180
160
At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J = 125C No Voltage Reapplied Rated VRRM Reapplied
140
120
100 16TTS..Series 80 1 10 100

Number Of Equal Amplitude Half C ycle Current Pulses (N)
16TTS.. Series
80 0.01
0.1 Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
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1000 Instantaneous On-state Current (A) 16TTS.. Series
100
10 T = 25C
J
T J= 125C 1 0 1 2 3 4 5 Instantaneous On-st ate Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics

Transient Thermal Impedance Z thJC (C/W) 10 Steady State Value (DC Operation)
D= D= D= D= D=
0.50 0.33 0.25 0.17 0.08 Single Pulse 16TTS.. Series
0.1
0.01 0.0001
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics

100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms 10 tr = 1 s, tp >= 6 s
(1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms

(a)
(b)
TJ = -10 C TJ = 25 C
TJ = 125 C
1 VGD IGD 0.1 0.001 0.01
(4)
(3)
(2)
(1)
16TTS.. Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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Outline Table
10.54 (0.41)
1.32 (0.05) 3.78 (0.15) DIA. 3.54 (0.14) 2.92 (0.11) 2.54 (0.10) TERM 2 6.48 (0.25) 6.23 (0.24) 1.22 (0.05)
MAX.
15.24 (0.60) 14.84 (0.58) 1 2 3
14.09 (0.55) 13.47 (0.53)
3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 0.10 (0.004)
1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03)
2.89 (0.11) 2.84 (0.10)
1 2 3 4.57 (0.18) 4.32 (0.17)
0.61 (0.02) MAX.
Dimensions in millimeters (and inches)

5.08 (0.20) REF.
Ordering Information Table

Device Code
16
1
T
2
T
3
S
4
16
5
2 (A)
1 2 3 4 5
Current Rating Circuit Configuration: T = Single Thyristor Package: T = TO-220AC Type of Silicon: S = Converter Grade Voltage code: Code x 100 = VRRM 08 = 800V 12 = 1200V 16 = 1600V
1 (K) (G) 3
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Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
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Bulletin I2115 rev.

SAFEIR Series 16TTS..

< 1.4V @ 10A

ITSM = 200A VRRM = 800 to 1600V

Output Current in Typical Applications Applications

Three-phase Bridge Units

Major Ratings and Characteristics Characteristics

Package Outline Units

16TTS.. SAFEIR Series

VDRM , maximum peak direct voltage V

Absolute Maximum Ratings

Max. I t for fusing

t = 0.1 to 10ms, no voltage reapplied @ 10A, TJ = 25C TJ = 125C

Max. On-state Voltage Drop On-state slope resistance

VR = rated VRRM/ VDRM

Max. Latching Current

200 500 150

16TTS.. SAFEIR Series

Max. required DC Gate Voltage to trigger

3.0 2.0 1.0

Mountingsurface,smoothandgreased g (oz.) Kg-cm (Ibf-in)

16TTS.. SAFEIR Series

120 115 110 105 100 95 90 0 2

16TTS.. Series R thJC (DC) = 1.3 C/W

Maximum Allowable Case Temperature (C)

125 120 115

16TTS.. Series R thJC(DC) = 1.3 C/W

110 105 100 95 90 0 2 4 6 8 10 12 14 16 Average On-state Current (A) 30

Average On-state Current (A)

Fig. 1 - Current Rating Characteristics

Fig. 2 - Current Rating Characteristics

18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 Average On-state Current (A)

180 120 90 60 30 RMS Limit

16TTS.. Series T J = 125C

16TTS.. Series T J = 125C 0 2 4 6 8 10 12 14 16 18

0 Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics

Fig. 4 - On-state Power Loss Characteristics

100 16TTS..Series 80 1 10 100

0.1 Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - Maximum Non-Repetitive Surge Current

16TTS.. SAFEIR Series

T J= 125C 1 0 1 2 3 4 5 Instantaneous On-st ate Voltage (V)

Fig. 7 - On-state Voltage Drop Characteristics

0.50 0.33 0.25 0.17 0.08 Single Pulse 16TTS.. Series

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance ZthJC Characteristics

(1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms

1 VGD IGD 0.1 0.001 0.01

16TTS.. Series 0.1 1

Frequency Limited by PG(AV) 10 100

Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

16TTS.. SAFEIR Series

15.24 (0.60) 14.84 (0.58) 1 2 3

14.09 (0.55) 13.47 (0.53)

3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 0.10 (0.004)

1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03)

2.89 (0.11) 2.84 (0.10)