High Performance CMOS Four Quadrant Analog Multiplier in 45 NM Technology

International Journal of Application or Innovation in Engineering& Management (IJAIEM)
Web Site: www.ijaiem.org Email: editor@ijaiem.org, editorijaiem@gmail.com

Volume 2, Issue 7, July 2013 ISSN 2319 - 4847

Volume 2, Issue 7, July 2013 Page 125

Abstract
In this paper, a compact low-voltage CMOS analog multiplier is proposed. It is based on the square-law characteristics of the
MOS transistor. The proposed circuit is obtained by rearranging circuit topology of a recently reported multiplier which is
unpractical since the circuit topology itself needs an ideal voltage reference to form a multiplication function. By doing so, the
ideal voltage reference is no longer required leading to achieve a new multiplier circuit with real compactness. Simulated
results using TSPICE for 0.045 CMOS process show that main performances of the proposed modulator including power
consumption, noise, delay and bandwidth are successfully improved.

Keywords: CMOS, Analog Multiplier.

1. INTRODUCTION
Four-Quadrant analog multipliers are very useful building blocks in many circuits such as adaptive filters, frequency-
shifters, and modulators. These applications are required to operate in low voltage environment for improving their
power efficiency and incorporating with mixed signal systems to be used in portable applications [1]. According to [2],
a four quadrant analog multiplier can be realized in many ways and it is also suggested by [3] that using saturated
MOSFET in strong inversion is more practical than any other means. Recently, based on a square-law relation of
saturated MOSFET, various compact multiplier architectures have been proposed [5]-[7].
In this paper, we report a four-quadrant analog multiplier circuit which is based on a similar technique [4] which has
been realized in CMOS technology. This multiplier relies on the quadratic drain-current/ gate-voltage characteristics of
MOS transistors operated in saturation. The proposed multiplier has been simulated in TSPICE by using model
parameter for 0.045 CMOS process. The results show that power consumption, noise, delay of the proposed circuit is
better than those of the circuit in [4].
2. BASIC CONCEPT
A CMOS four-quadrant multiplier can be used to multiply two bipolar signals, x and y. The multiplier circuit is a
very useful building block and can be applied to any analog signal processing as well as analog filter, frequency
doublers, modulator etc. Fig 1 [2] shows the basic block diagram of multiplying two inputs.

Figure 1Block Diagram Of Multiplier Operation
The Quarter-Square Algebraic Identity as shown above is a famous method for an implementation of multiplier
operation. There are 3 steps of this logic as described below:
1. Sum and Subtraction of both inputs A and B.
2. Take their results and square them.
3. Subtract the two squared output.
So the final output becomes:
( ) ( ) | |
2 1
2
2 1
2
2 1 0
4 V V V V V V V = + =

(1)

An excellent source of information on CMOS multipliers that operate in a multitude of modes such as saturation,
triode, weak inversion, and others can be found. Here, operation in saturation seems to be preferable to the triode mode
High Performance CMOS Four Quadrant
Analog Multiplier in 45 nm Technology

Saradindu Panda
1
, Supriyo Srimani
2
, Prof. Bansibadan Maji
3
,
Prof. Asish Kumar Mukhopadhyay
4

1,2
Dept. of Electronics and Communication Engineering, Narula Institute of Technology, Kolkata, India
3
Professor & Head, Dept. of Electronics and Communication Engineering, NIT, Durgapur, India
4
Professor,B.C.Roy Engineering College, Durgapur, West Bengal, India.



because there are more options for multiplier topologies in saturation logic. A multiplier operation in saturation is
possible only two transistors. This enables it to be used for low-voltage operations.

3. CIRCUIT DESCRIPTION SQUARE ROOTING CIRCUIT
3.1 Circuit Operation
An excellent source of information on CMOS multipliers that operate in a multitude of modes such as saturation,
triode, weak inversion, and others can be found. Here, operation in saturation seems to be preferable to the triode mode
because there are more options for multiplier topologies in saturation logic. A multiplier operation in saturation is
possible only two transistors. This enables it to be used for low-voltage operations.
Another method is using a cross-coupled transistor pairs and floating voltage sources which also work in low-voltage.
The circuit is based on the ideal square-law behavior of the MOS transistor in the saturation region, given by the
expression

2
) (
t GS d
V V K I =
(2)
with K =
L
W
C
ox n
. . . 5 . 0 ,
D
I the drain is current,
GS
V is the gate-to-source voltage,
T
V is the threshold voltage.
Realizing an analog multiplier and the multiplier in [7] is based on a similar approach showing in Fig. 1. It comprises
a pair of common source amplifier (M1 and M2), which acts as input transistors to provide output currents in term of
squaring functions of input voltages (V1 and V2), and two identical square root blocks. Injecting the output currents of
the input transistors into the square root blocks, a differential output current of the overall circuit will become a
multiplication function of two input signals V12 and V34.
Assuming the MOSFET M1 and M2 are biased in active region and neglecting channel length modulation effect, the
current I
A
and I
B
can be respectively found as

2
1
) (
t n A
V V K I =
(3)

2
2
) (
t n B
V V K I =
(4)

Figure 2Realization of a four quadrant analog multiplier.
Where
n
K
=
L
W
C
ox n
. . . 5 . 0
is a Trans conductance parameter of each MOSFET and V
t
is the threshold voltage of NMOS
transistor. From (3) and (4), the relationship between the current I
A
and I
B
and the differential input voltage V
12
=V
1
-
V
2
can be given by

n B A
K V I I
12
=
(5)

The drain currents I
A
and I
B
are fed into the square root blocks controlled by V
34
, results in

( )
B A out
I I KV I I I = =
34 02 01
(6)

WhereK is the gain of the square root blocks. Substituting (5) into (6), yields

12 34
V V K K I
n out
=
(7)

It can be seen that an output current appeared in (7) is in form of a multiplication function between two input signals
V
12
and V
34
. Based on this approach, both linear transconductor and four-quadrant analog multiplier have been
proposed.
Unfortunately, the early works in [7] require more than 3V for supply voltage which is not sufficiently low for modern
analog design. Subsequently, a new square rooting circuit operated under 1.5V single supply was proposed in [10]
which can be applied as a compact four quadrant analog multiplier.


In the next section, the improved square root circuit which is more suitable for realizing an analog multiplier will be
described.
3.2 Square Rooting Circuit

Figure 3The square rooting circuit.

A square rooting circuit which is improved from Fig 2 is shown in Fig 3. Using square-law relation of saturated
MOSFET in strong inversion and setting M3-M8 to be identical, the currents Ic and I
D
are found to be

2
34
|
|
.
|
\
|
+ =
B
A
p C
K
I
V K I

(8)

2
34
|
|
.
|
\
|
+ =
B
B
p D
K
I
V K I

(9)

Where
p
K is a transconductance parameter of each PMOS transistor and V
34
=V
3
-V
4
is a differential control voltage.
Considering (6) and (7) in conjunction with the fact that I
A
+I
D
=I
o1
and I
B
+I
C
=I
o2
leading to

B A A p p
I I I K V V K I + + + =
34
2
34 01
2

(10)

B A B p p
I I I K V V K I + + + =
34
2
34 02
2

(11)

Subtracting (10) and (11), results in

( )
B A p out
I I V K I I I = =
34 02 01
2

(12)

It is obvious that the output current of the improved square root circuit is a function of a square root of I
A
and I
B
and its
gain can be adjusted by the voltage V
34
and transconductance parameter
p
K
3.3 Schematic Diagram of Four Quadrant Analog Multiplier using TSPICE

Figure 4 Schematic Diagram of Four Quadrant Analog Multiplier.


Fig.4.3 shows the proposed multiplier circuit which is constituted by substituting the square rooting circuit in Fig.4.2
into the square root blocks of Fig.4.1. Focusing on the differential output voltage we have found that

( )
02 01 02 01
I I R V V V
out
= =

(13)
Substituting (16) into (17), differential output voltage can be found as

( )
B A p out
I I K RV V =
34
2

(14)

Finally, substituting (5) into (14) yields

12 34
2 V V K K R V
n p out
=

(15)

Now, we have an output offset-free four quadrant analog multiplier and its gain can be adjusted by the load resistor R
and the dimensions of each MOSFET.

4. SIMULATION RESULT
The multiplier circuit in Fig.4 is designed and simulated by using TSPICE for 45 nm CMOS process. The input voltage
V
12
and V
34
are set to be balance with common mode voltages, respectively and supply voltage V
DD
is set at 0.1V. Trying
to avoid channel length modulation and short channel effects, the channel parameters of all transistors are set
accordingly. Transistor parameters are listed in Table 1. The load resistors R are chosen to be 2.5 k. The power
consumption, delay and noise have been listed in Table 2.
A 0.1V, 25 kHz sinusoidal carrier signal V
12
shown in Fig.5(a) is multiplied by a 0.1V, 1 kHz sinusoidal modulating
signal V
34
shown in Fig. 5.(b). A resulting waveform is shown in Fig. 5.(c). Fig.6 shows simulated DC transfer
characteristics of the proposed multiplier, when V
12
was swept continuously from -0.3V to 0.1V while V
34
was varied
from -0.3V to 0.1V with0.1V step size. It can be observed that the linear range of V
12
is approximately +0.4V.

Table.1: Transistor Parameters

Figure 5 Schematic Diagram of Four Quadrant Analog Multiplier (a) V
12
sinusoidal carrier signal (b) V
34
sinusoidal
modulating signal (c) Output waveform of amplitude modulator

Figure 6 DC Transfer Characteristic Figure 7 Flicker Noise Characteristic
Transistor L(m) W(m) AS=AD(pm
2
) PS=PD(m)
M1-M2 0.045 0.045 0.010125 0.54
M3-M8 0.045 0.1575 0.0354375 0.765
M9-M10 0.045 1.8 0.405 4.05


Figure 8 Total Output Noise Characteristic Figure 9 Thermal Noise Characteristic

Table.2: Output Data of Noise, Power and Delay in 45 nm Technology

5. Conclusion
A new square rooting circuit can be used for realizing a CMOS four-quadrant analog multiplier has been presented.
The resulting multiplier circuit is improved to be more compact than the previous work. As a result, the proposed
multiplier provides low noise, low delay and low static power consumption. Simulation results are given to verify the
multiplier circuit performances.

References
[1.] KLAAS BULT AND HANS WALLINGA,, A CMOS Four-Quadrant Analog Multiplier, IEEE JOURNAL OF
SOLID-STATE CIRCUITS, VOL. SC-21, NO. 3, JUNE 1986
[2.] Pipat Prommee Montri Som dunyakanok and Kobchai Dejhan1, Single Low-Supply Current-mode CMOS
Analog Multiplier Circuit: A Tutorial, IEEE Trans. Circuits Syst. II, vol. 45, no. 12, 2006.
[3.] R. G. Cavajal, J. Ramirez-Angulo, A. J. Lopez Matin, A. Torralba, J. A. Gomez Galan, A. Carlosena, and F. M.
Chavero, The flipped voltage follower: a useful cell for low-voltage low-power circuit design, IEEETrans.
Circuits Syst. I, 2005, 52,(7), pp. 1276-1291.
[4.] J. Ramirez-Angulo, R.G.Carvajal, and J. Martinnez-Heredia,1.4V supply, wide swing, high-frequency CMOS
analogue multiplier with high current efficiency, Proc IEEE ISCAS, May 2000, Geneva Switzerland, Vol. V,
p.553-536.
[5.] J. Ramirez-Angulo, R.G. Carvajal, and J. Martinnez-Heredia, 1.4V supply, wide swing, high-frequency CMOS
analogue multiplier with high current efficiency,Proc IEEE ISCAS, May 2000, Geneva Switzerland, Vol. V, p.
553-536.
[6.] A. Demosthenous, and M. Panovic, Low voltage MOS linear transconductor/squarer and four-quadrant multiplier
for analog VLSI, IEEE Trans on Cir. and Syst. I: Regular paper, vol. 52, no. 9, pp. 1721- 1731, 2005.
[7.] A. Hyogo, Y. Fukutomi and K. Sekine, Low voltage four quadrant analog multiplier using square-root circuit
based on CMOS pair, Proc.of IEEE ISCAS99, pp. II 274-277, 1999.
[8.] C. Sawigun, N. Kiatwarin and W. Ngamkham, A low voltage MOS linear transconductor with constant input
linear range, ECTI 2006, vol. 1, pp. 167-170, UbonRatchathani, Thailand, 2006.

AUTHOR:

Saradindu Panda received M.Tech from Jadavpur University in 2007 in VLSI Design and Microelectronics
Technology. He is pursuing his PhD at NIT, Durgapur, West Bengal, India. Presently, he is involved in design and
management of low-power and high speed integrated circuits with Solid State Devices in Nano Regime. He is now
faculty in ECE Department at Narula Instutute of Technology, Kolkata, India. He has more than 15 publications in
different International and National Journals and Conference Proceedings.

Chann
el
Length
Average Power
Consumed
(Watt)
Delay
(Sec)
Flicker Noise
(sq V/ Hz)
Thermal Noise
(V)
Total Output
Noise
(V)
45 nm 6.006875x10
-14
5.3155 x 10
-6

5.3155 x 10
-6
5.3155 x 10
-6
5.3155 x 10
-6


Supriyo Srimani is pursuing B.Tech in ECE, Narula Institute of Technology, Kolkata, India. His research interest in
the area of VLSI Low Power Design, Image Processing, Signal Processing.

Prof. (Dr.) Bansibadan Maji is now a senior Professor of ECE Department in NIT, Durgapur, West Bengal, India. He
is now Head of The Department of ECE at NIT. His main research area on Microwave, Antenna, VLSI Design and
Low power Device and Circuits. He has more than 56 publications in different International and National Journals and
Conference Proceedings.

Prof. (Dr.) A. K. Mukhopadhyay received M.Tech from IIT, Kharagpur, and Ph.D(Engg) from Jadavpur University,
India. Currently, he is the Professor & Head ,CSE Deptt, B.C.Roy Engineering College, Durgapur, West Bengal, India.
He was the Principal of BCET, Durgapur.. He also worked at Narula Institute of Technology, Kolkata, College of
Engineering & Management, Kolaghat, NERIST, Itanagar and IIT, Kharagpur. His current area of research includes
Wireless and Mobile Networks and Overlay-based heterogeneous networks. He has 48 publications mostly in
international journal and conference proceedings. He is a Life Fellow of the Institution of Engineers (I), Member,
IEEE, Member, IEEE ComSoc, Global Member, ISOC; Sr. Life Member, CSI; Life Member, ISTE, IETE, SSI etc.

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International Journal of Application or Innovation in Engineering& Management (IJAIEM)

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