50RIA1200 Thyristor 1200V 50A

Bulletin I2401 rev.
A 07/00
50RIA SERIES
MEDIUM POWER THYRISTORS
Stud Version
Features
High current rating
Excellent dynamic characteristics
50 A
dv/dt = 1000V/s option

Superior surge capabilities
Standard package
Metric threads version available
Types up to 1600V V DRM / V RRM
Typical Applications
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and
speed control circuit
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics

Parameters
IT(AV)
I t
94
90
80
80
@ 50Hz
1430
1200
@ 60Hz
1490
1257
@ 50Hz
10.18
7.21
KA2s
@ 60Hz
9.30
6.58
KA2s
100 to 1200
1400 to 1600
V DRM/V RRM
tq
Units
50
@ TC
50RIA
140 to 160
50
IT(RMS)
ITSM
10 to 120
typical
TJ
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110
- 40 to 125
Case Style
TO-208AC (TO-65)
50RIA Series
Bulletin I2401 rev. A 07/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
V DRM /V RRM , max. repetitive
VRSM , maximum non-
I DRM /I RRM max.
Code
peak and off-state voltage (1)

V
repetitive peak voltage (2)

V
@ TJ = TJ max.
10
100
150
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
120
1200
1300
140
1400
1500
160
1600
1700
50RIA
mA
15
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s
(2) For voltage pulses with tp 5ms
On-state Conduction
Parameter
IT(AV)
140 to 160
Units
Max. average on-state current
50
50
@ Case temperature
94
90
IT(RMS)
Max. RMS on-state current
ITSM
Max. peak, one-cycle

non-repetitive surge current
I2t
50RIA
10 to 120
Maximum I2t for fusing
80
80
1430
1200
Conditions
180 sinusoidal conduction
t = 10ms
No voltage
1490
1257
t = 8.3ms
reapplied
1200
1010
t = 10ms
100% VRRM
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial TJ = TJ max.
1255
1057
10.18
7.21
9.30
6.58
t = 8.3ms
reapplied
7.20
5.10
t = 10ms
100% VRRM
t = 8.3ms
reapplied
KA2 s
6.56
4.65
I2t
Maximum I2t for fusing
101.8
72.1
KA2s
VT(TO)1
Low level value of threshold
0.94
1.02
1.08
1.17
4.08
4.78
3.34
3.97
1.60
1.78
t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.

(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
voltage
VT(TO)2 High level value of threshold
( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.
voltage
rt1
Low level value of on-state
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
slope resistance
rt2
High level value of on-state
( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.
slope resistance
VTM
Max. on-state voltage
IH
Maximum holding current
200
IL
Latching current
400
V
mA
Ipk= 157 A, TJ = 25C

TJ = 25C. Anode supply 22V, resistive load,
Initial IT = 2A
Anode supply 6V, resistive load
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50RIA Series
Switching
Parameter
di/dt
current
td
50RIA
Units
Max. rate of rise of turned-on

VDRM 600V
200
VDRM 1600V
100
ITM = (2x rated di/dt) A
0.9
TC = 25C VDM = rated VDRM ITM = 10A dc resistive circuit
Typical delay time
A/s
s
tq
Conditions
TC = 125C, VDM = rated VDRM
Typical turn-off time
110
Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max.
Gate pulse = 10V, 15 source, tp = 20s

TC = 125C, ITM = 50A, reapplied dv/dt = 20V/s
dir/dt = -10A/s, VR=50V
Blocking
Parameter
dv/dt
Max. critical rate of rise of

off-state voltage
50RIA
200
500 (*)
Units Conditions
V/s
TJ = TJ max. linear to 100% rated VDRM

TJ = TJ max. linear to 67% rated VDRM
(*) Available with dv/dt = 1000V/s, to complete code add S90 i.e. 50RIA160S90.
Triggering
Parameter
PGM
Maximum peak gate power
50RIA
PG(AV) Maximum average gate power
2.5
IGM
Max. peak positive gate current
2.5
+VGM
Maximum peak positive

gate voltage
-VGM
TJ = TJ max, t p 5ms
20
V
Maximum peak negative

gate voltage
IGT
Units Conditions
10
10
DC gate current required
250
to trigger
100
50
TJ = 125C
DC gate voltage required
3.5
TJ = - 40C
to trigger
2.5
IGD
DC gate current not to trigger
5.0
mA
VGD
DC gate voltage not to trigger
0.2
VGT
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TJ = - 40C
mA
TJ = 25C
Max. required gate trigger

current/voltage are the
lowest value which will trigger
all units 6V anode-to-cathode
applied
TJ = 25C
Max. gate current/ voltage not to
TJ = TJ max
VDRM = rated voltage trigger is the max. value which
will not trigger any unit with rated
TJ = TJ max
VDRM anode-to-cathode applied
50RIA Series
Thermal and Mechanical Specification

Parameter
50RIA
Units Conditions
TJ
Max. operating temperature range
- 40 to 125
Tstg
Max. storage temperature range
- 40 to 125
0.35
K/W
DC operation
0.25
K/W
Mounting surface, smooth, flat and greased
Non-lubricated threads
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
T
Mounting torque
wt
Min.
2.8 (25)
Nm
Max.
3.4 (30)
(lbf-in)
28 (1.0)
g (oz)
Approximate weight
Case style
TO-208AC (TO-65)
See Outline Table
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction Units
180
0.078
0.057
120
0.094
0.098
90
0.120
0.130
60
0.176
0.183
30
0.294
0.296
K/W
Conditions
TJ = TJ max.
Ordering Information Table

Device Code
50
RIA 160 S90

2
Current code
Essential part number
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
Critical dv/dt: None = 500V/s (Standard value)

S90
= 1000V/s (Special selection)
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A

M
= Stud base TO-208AC (TO-65) M6 X 1
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50RIA Series
Outline Table
Case Style TO-208AC (TO-65)
130
Maximum Allowable Case Temperature (C)
All dimensions in millimeters (inches)
50RIA Series (100V to 1200V)

RthJC (DC) = 0.35 K/W
120
Conduction Angle
110
30
60
100
90
120
180
90
10
20
30
40
50
60
130

120
110
Conduction Period
100
90
30
80
10
20
60
30
90
120
40
180
50
60
DC
70
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
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80
50RIA Series
80
180
120
90
60
30
70
60
50
RMS Limit
40
30
Conduction Angle
20
50RIA Series
(100V to 1200V)
TJ = 125C
10
0
10
20
30
40
50
DC
180
120
90
60
30
90
80
70
60
50
RMS Limit
40
30
Conduction Period
20
50RIA Series
(100V to 1200V)
TJ = 125C
10
0
At Any Rated Load Condition And With

Rated VRRM Applied Following Surge.
Initial TJ = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
800
700
50RIA Series
(100V to 1200V)
1
10
1500
100
40
50
60
70
80
Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125C
No Voltage Reapplied
Rated VRRM Reapplied
1400
1300
1200
1100
1000
900
800
700
50RIA Series
(100V to 1200V)
600
500
0.01

120
110
Conduction Angle
30
100
60
90
120
180
90
5 10 15 20 25 30 35 40 45 50 55
Fig. 7 - Current Ratings Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
130
0.1
Pulse Train Duration (s)
30
Number Of Equal Amplitude Half Cycle Current Pulses (N)
20
Fig. 4 - On-state Power Loss Characteristics
1100
80
10
1200
600
100

1300
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
I2401 rev. A 07/00
Bulletin
130

120
110
Conduction Period
100
90
30
80
90
60 120
180
DC
10 20 30 40 50 60 70 80 90
Fig. 8 - Current Ratings Characteristics
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50RIA Series
180
120
90
60
30
80
70
60
50
RMS Limit
40
30
Conduction Angle
20
50RIA Series
(1400V to 1600V)
TJ = 125C
10
0
10 15 20 25 30 35 40 45 50
120
DC
180
120
90
60
30
110
100
90
80
70
60
RMS Limit
50
40
Conduction Period
30
50RIA Series
(1400V to 1600V)
TJ = 125C
20
10
0
20
30
40
50
60
70
80
At Any Rated Load Condition And With

Rated VRRM Applied Following Surge.
Initial TJ = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
800
700
600
50RIA Series
(1400V to 1600V)
1
10
1200
100
1000
900
800
700
600
500
50RIA Series
(1400V to 1600V)
400
0.01
0.1
Pulse Train Duration (s)

1000
100
TJ = 25C
TJ = 125C
10

1
1.5
2.5
3.5
4.5
Instantaneous On-state Current (A)
1000
1
0.5
Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125C
No Voltage Reapplied
Rated VRRMReapplied
1100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous On-state Current (A)
10
1100
500
90
100
TJ = 25C
10
TJ = 125C

1
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Instantaneous On-state Voltage (V)
Instantaneous On-state Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Fig. 14 - Forward Voltage Drop Characteristics
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50RIA Series
I2401 rev. A 07/00
Transient Thermal Impedance ZthJ-hs (K/W)
Bulletin
1
Steady State Value
RthJ-hs = 0.35 K/W
0.1
50RIA Series
0.01
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 15 - Thermal Impedance ZthJC Characteristics

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 s
b) Recommended load line for
<=30% rated di/dt : 20V, 65 ohms
tr<=1 s
10
(b)
(a)
Tj=125 C
VGD
IGD
0.1
0.001
0.01
(1) PGM = 10W, tp = 5ms

(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500s
Tj=-40 C
Tj=25 C
Instantaneous Gate Voltage (V)
100
(1) (2)
50RIA Series
0.1
(3) (4)
Frequency Limited by PG(AV)

10
100
1000
Instantaneous Gate Current (A)
Fig. 16 - Gate Characteristics
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This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.

50RIA1200 Thyristor 1200V 50A

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50RIA1200 Thyristor 1200V 50A

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Available Formats

Bulletin I2401 rev.

dv/dt = 1000V/s option

Major Ratings and Characteristics

V DRM /V RRM , max. repetitive

VRSM , maximum non-

I DRM /I RRM max.

peak and off-state voltage (1)

repetitive peak voltage (2)

Max. average on-state current

Max. RMS on-state current

Max. peak, one-cycle

Maximum I2t for fusing

Sinusoidal half wave,

Maximum I2t for fusing

Low level value of threshold

t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.

( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.

Low level value of on-state

(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.

High level value of on-state

( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.

Max. on-state voltage

Maximum holding current

Ipk= 157 A, TJ = 25C

Anode supply 6V, resistive load

Max. rate of rise of turned-on

ITM = (2x rated di/dt) A

TC = 25C VDM = rated VDRM ITM = 10A dc resistive circuit

Typical delay time

Typical turn-off time

Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max.

Gate pulse = 10V, 15 source, tp = 20s

Max. critical rate of rise of

TJ = TJ max. linear to 100% rated VDRM

Maximum peak gate power

PG(AV) Maximum average gate power

Max. peak positive gate current

Maximum peak positive

Maximum peak negative

DC gate current required

DC gate voltage required

DC gate current not to trigger

DC gate voltage not to trigger

Max. required gate trigger

Thermal and Mechanical Specification

Max. operating temperature range

Max. storage temperature range

Mounting surface, smooth, flat and greased

RthJC Max. thermal resistance,

See Outline Table

Sinusoidal conduction Rectangular conduction Units

Ordering Information Table

RIA 160 S90

Essential part number

Voltage code: Code x 10 = VRRM (See Voltage Rating Table)

Critical dv/dt: None = 500V/s (Standard value)

= 1000V/s (Special selection)

None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A

= Stud base TO-208AC (TO-65) M6 X 1