Datasheet ICE2QS03
Datasheet ICE2QS03
Datasheet ICE2QS03
0, December 4, 2009
ICE2QS03
Quasi-Resonant
Controller
PWM
N e v e r
s t o p
t h i n k i n g .
ICE2QS03
Revision History:
December 4, 2009
Previous Version:
None
Page
Datasheet
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CoolMOS, CoolSET are trademarks of Infineon Technologies AG.
ICE2QS03
Quasi-Resonant PWM Controller
Product Highlight
Active burst mode for low standby power
Digital frequency reduction for better overall system efficiency
Integrated power cell for IC self-power supply
Features
Description
Snubber
Cbus
85 ~ 265Vac
RVCC
Lf
DO
DVCC
CVCC
VO
Cf
Ws
CO
RZC2
RZC1
Wa
Dr1~Dr4
CZC
HV
VCC
ZC
CPS
Power
Cell
GND
Control Unit
Q1
Rb1
Gate
Driver
GATE
Optocoupler
Current
Limitation
Protection Block
ICE2QS03
Version 2.0
Rovs1
Rc1
CS
RCS
Type
ICE2QS03
Rb2
Power Management
Digital Process Block
CFB
CDS
TL431
Cc1
Cc2
Rovs2
Package
PG-DIP-8-6
3
December 4, 2009
Page
1
1.1
1.2
1.3
3
3.1
3.2
3.3
3.3.1
3.3.1.1
3.3.1.2
3.3.2
3.3.3
3.4
3.4.1
3.5
3.5.1
3.5.2
3.5.3
3.6
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
VCC Pre-Charging and Typical VCC Voltage During Start-up . . . . . . . . . . .7
Soft-start . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Normal Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Digital Frequency Reduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Up/down counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Zero crossing (ZC counter) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Ringing suppression time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Switch Off Determination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Foldback Point Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Active Burst Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Entering Active Burst Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . .10
During Active Burst Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Leaving Active Burst Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4
4.1
4.2
4.3
4.3.1
4.3.2
4.3.3
4.3.4
4.3.5
4.3.6
4.3.7
4.3.8
4.3.9
4.3.10
Version 2.0
December 4, 2009
1.1
1.3
ZC (Zero Crossing)
At this pin, the voltage from the auxiliary winding after
a time delay circuit is applied. Internally, this pin is
connected to the zero-crossing detector for switch-on
determination. Additionally, the output overvoltage
detection is realized by comparing the voltage Vzc with
an internal preset threshold.
Pin
Symbol
Function
ZC
Zero Crossing
FB
Feedback
CS
Current Sense
HV
HV
GATE
VCC
GND
Controller Ground
1.2
FB (Feedback)
Normally, an external capacitor is connected to this pin
for a smooth voltage VFB. Internally, this pin is
connected to the PWM signal generator for switch-off
determination (together with the current sensing
signal), the digital signal processing for the frequency
reduction with decreasing load during normal
operation, and the Active Burst Mode controller for
entering Active Burst Mode operation determination
and burst ratio control during Active Burst Mode
operation. Additionally, the open-loop / over-load
protection is implemented by monitoring the voltage at
this pin.
CS (Current Sense)
This pin is connected to the shunt resistor for the
primary current sensing, externally, and the PWM
signal generator for switch-off determination (together
with the feedback voltage), internally. Moreover, shortwinding protection is realised by monitoring the voltage
Vcs during on-time of the main power switch.
Package PG-DIP-8-6
ZC
GND
FB
VCC
CS
GATE
HV
HV
Figure 1
Pin Functionality
GND (Ground)
This is the common ground of the controller.
Version 2.0
December 4, 2009
Figure 2
Version 2.0
2pF
25kO
RFB
VREF
D1
C3
C2
VFBBOff
VFBBOn
VFBEB
VFBZL
VFBZH
VFBR1
VFBOLP
VZCRS
VZCOVP
C10
C9
C8
C7
C6
C5
C4
Count=7
C1
Comparator
ZC counter
tBEB
&
Active
Burst Mode
Ringing
Suppression
G1
Regulation
tOLP_B
Delay
tZCOVP
tCOUNT
Up/down counter
clk
Zero Crossing
VVCCOVP
VPWM
OSC
f
en sB
PWM
Comparator
Soft-start
18V
Current Mode
10.5
Undervoltage Lockout
Power Management
GPWM
G3
G4
R
G8
C15
G2
G7
1
S
C14
Leading
Edge
Blanking
tLEB
TOnMax
1pF
VCSSW
10kO
Current Limiting
D2
Gate
Drive
Depl. CoolMOS
Gate Drive
R
latched
Protect
&
G9
Protection
R
Autorestart
Protect
S Q
TOffMax
Delay
tCSSW
OTP
Foldback
Correction
C13 VCSB
10us
Internal
Bias
PWM Control
PWM OP
&
G6
&
G5
C12
Voltage
Reference
Startup Cell
HV
CS
GND
GATE
FB
ZC
VZCC
VCC
December 4, 2009
Functional Description
3.1
3.2
Vcs_sst
(V)
1.00
0.83
0.66
0.49
0.32
ton
Figure 4
VVCC
VVCCon
ii
3.3
iii
Figure 3
t2
V
C
VCCon vcc
= -----------------------------------------1
I VCCch arg e2
[1]
Version 2.0
12
Time(ms)
Normal Operation
VVCCoff
t1
Soft-start
3.3.1
Digital Frequency Reduction
As mentioned above, the digital signal processing
circuit consists of an up/down counter, a ZC counter
and a comparator. These three parts are key to
implement digital frequency reduction with decreasing
load. In addition, a ringing suppression time controller
is implemented to avoid mistriggering by the high
frequency oscillation, when the output voltage is very
low under conditions such as soft start or output short
circuit . Functionality of these parts is described as in
the following.
December 4, 2009
3.3.1.1
Up/down counter
The up/down counter stores the number of the zero
crossing to be ignored before the main power switch is
switched on after demagnetisation of the transformer.
This value is fixed according to the feedback voltage,
VFB, which contains information about the output
power. Indeed, in a typical peak current mode control,
a high output power results in a high feedback voltage,
and a low output power leads to a low regulation
voltage. Hence, according to VFB, the value in the up/
down counter is changed to vary the power MOSFET
off-time according to the output power. In the following,
the variation of the up/down counter value according to
the feedback voltage is explained.
The feedback voltage VFB is internally compared with
three threshold voltages VRL, VRH and VRM, at each
clock period of 48ms. The up/down counter counts then
upward, keep unchanged or count downward, as
shown in Table 1.
up/down counter
action
Stop counting, no
value changing
Count downwards
till 1
VFBR1
VFBZH
VFBZL
n+2
n+2
n+2
n+2
n+1
n-1
t
n+1
Up/down
counter
Case 1
3 1
Case 2
1 1
Case 3
4 1
Figure 5
3.3.1.2
Zero crossing (ZC counter)
In the system, the voltage from the auxiliary winding is
applied to the zero-crossing pin through a RC network,
which provides a time delay to the voltage from the
auxiliary winding. Internally, this pin is connected to a
clamping network, a zero-crossing detector, an output
overvoltage detector and a ringing suppression time
controller.
During on-state of the power switch a negative voltage
applies to the ZC pin. Through the internal clamping
network, the voltage at the pin is clamped to certain
level.
The ZC counter has a minimum value of 0 and
maximum value of 7. After the internal MOSFET is
turned off, every time when the falling voltage ramp of
on ZC pin crosses the 100mV threshold, a zero
crossing is detected and ZC counter will increase by 1.
It is reset every time after the GATE output is changed
to high.
The voltage vZC is also used for the output overvoltage
protection. Once the voltage at this pin is higher than
the threshold VZCOVP during off-time of the main switch,
the IC is latched off after a fixed blanking time.
To achieve the switch-on at voltage valley, the voltage
from the auxiliary winding is fed to a time delay network
(the RC network consists of Dzc, Rzc1, Rzc2 and Czc as
shown in typical application circuit) before it is applied
to the zero-crossing detector through the ZC pin. The
needed time delay to the main oscillation signal t
should be approximately one fourth of the oscillation
period (by transformer primary inductor and drainsource capacitor) minus the propagation delay from
Set up/down
counter to 1
Version 2.0
VFB
vFB
T=48ms
Table 1
clock
December 4, 2009
[2]
td
= C
R zc1 R zc2
--------------------------------zc R
+R
zc1
zc2
[3]
3.4
3.3.2
Ringing suppression time
After MOSFET is turned off, there will be some
oscillation on VDS, which will also appear on the voltage
on ZC pin. To avoid that the MOSFET is turned on
mistriggerred by such oscillations, a ringing
suppression timer is implemented. The timer is
dependent on the voltage vZC. When the voltage vZC is
lower than the threshold VZCRS, a longer preset time
applies, while a shorter time is set when the voltage vZC
is higher than the threshold.
3.3.2.1
Switch on determination
After the gate drive goes to low, it can not be changed
to high during ring suppression time.
After ring suppression time, the gate drive can be
turned on when the ZC counter value is higher or equal
to up/down counter value.
However, it is also possible that the oscillation between
primary inductor and drain-source capacitor damps
very fast and IC can not detect enough zero crossings
and ZC counter value will not be high enough to turn on
the gate drive. In this case, a maximum off time is
implemented. After gate drive has been remained off
for the period of TOffMax, the gate drive will be turned on
again regardless of the counter values and VZC. This
function can effectively prevent the switching
frequency from going lower than 20kHz, otherwise
which will cause audible noise, during start up.
3.4.1
Foldback Point Correction
When the main bus voltage increases, the switch on
time becomes shorter and therefore the operating
frequency is also increased. As a result, for a constant
primary current limit, the maximum possible output
power is increased, which the converter may have not
been designed to support.
To avoid such a situation, the internal foldback point
correction circuit varies the VCS voltage limit according
to the bus voltage. This means the VCS will be
decreased when the bus voltage increases. To keep a
constant maximum input power of the converter, the
3.3.3
Switch Off Determination
In the converter system, the primary current is sensed
by an external shunt resistor, which is connected
between low-side terminal of the main power switch
and the common ground. The sensed voltage across
the shunt resistor vCS is applied to an internal current
measurement unit, and its output voltage V1 is
compared with the regulation voltage VFB. Once the
voltage V1 exceeds the voltage VFB, the output flip-flop
is reset. As a result, the main power switch is switched
off. The relationship between the V1 and the vCS is
described by:
V
= 3.3 V
Version 2.0
CS
+ 0.7
Current Limitation
[4]
December 4, 2009
3.5.1
Entering Active Burst Mode Operation
For determination of entering Active Burst Mode
operation, three conditions apply:
the feedback voltage is lower than the threshold of
VFBEB(1.25V). Accordingly, the peak current sense
voltage across the shunt resistor is 0.17;
the up/down counter is 7; and
a certain blanking time (tBEB).
Once all of these conditions are fulfilled, the Active
Burst Mode flip-flop is set and the controller enters
Active Burst Mode operation. This multi-condition
determination for entering Active Burst Mode operation
prevents mistriggering of entering Active Burst Mode
operation, so that the controller enters Active Burst
Mode operation only when the output power is really
low during the preset blanking time.
Vcs-max(V)
0.9
0.8
0.7
0.6
80
100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400
Vin(V)
Figure 6
V BUS N a
= -----------------------ZC
R
N
ZC1 P
3.5.2
During Active Burst Mode Operation
After entering the Active Burst Mode the feedback
voltage rises as VOUT starts to decrease due to the
inactive PWM section. One comparator observes the
feedback signal if the voltage level VBH (3.6V) is
exceeded. In that case the internal circuit is again
activated by the internal bias to start with swtiching.
Turn-on of the power MOSFET is triggered by the
timer. The PWM generator for Active Burst Mode
operation composes of a timer with a fixed frequency of
52kHz, typically, and an analog comparator. Turn-off is
resulted by comparison of the voltage signal v1 with an
internal threshold, by which the voltage across the
shunt resistor VcsB is 0.34V, accordingly. A turn-off can
also be triggered by the maximal duty ratio controller
which sets the maximal duty ratio to 50%. In operation,
the output flip-flop will be reset by one of these signals
which come first.
If the output load is still low, the feedback signal
decreases as the PWM section is operating. When
feedback signal reaches the low threshold VBL(3.0V),
the internal bias is reset again and the PWM section is
disabled until next time regultaion siganl increases
beyond the VBH threshold. If working in Active Burst
Mode the feedback signal is changing like a saw tooth
between 3.0V and 3.6V shown in Figure 7.
[5]
Vcs-max(V)
0.9
0.8
0.7
3.5.3
Leaving Active Burst Mode Operation
The feedback voltage immediately increases if there is
a high load jump. This is observed by one comparator.
As the current limit is 34% during Active Burst Mode a
certain load is needed so that feedback voltage can
exceed VLB (4.5V). After leaving active busrt mode,
maximum current can now be provided to stabilize VO.
In addition, the up/down counter will be set to 1
0.6
300
500
700
900
1100
1300
1500
1700
1900
2100
Iz c(uA)
Figure 7
3.5
Version 2.0
10
December 4, 2009
VFB
Leaving
Active Burst
Mode
Entering
Active Burst
Mode
VFBLB
VFBBOn
VFBBOff
VFBEB
VCS
1.0V
VCSB
VVCC
VVCCoff
VO
t
Max. Ripple < 1%
Figure 8
3.6
Protection Functions
VCC Undervoltage
Overload/Open Loop
Over temperature
Output Overvoltage
Short Winding
Version 2.0
11
December 4, 2009
Electrical Characteristics
Note:
All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other ratings are
not violated.
4.1
Note:
Parameter
Symbol
Limit Values
min.
max.
Unit
Remarks
HV Voltage
VHV
500
VVCC
-0.3
27
FB Voltage
VFB
-0.3
5.0
ZC Voltage
VZC
-0.3
5.0
CS Voltage
VCS
-0.3
5.0
GATE Voltage
VOUT
-0.3
27
IZCMAX
mA
Junction Temperature
Tj
-40
125
Storage Temperature
TS
-55
150
Thermal Resistance
Junction -Ambient
RthJA
90
K/W
PG-DIP-8
VESD
kV
1)
4.2
Note:
Operating Range
Within the operating range the IC operates as described in the functional description.
Parameter
Symbol
Limit Values
min.
max.
Unit
VVCC
VVCCoff
VVCCOVP V
Junction Temperature of
Controller
TjCon
-25
125
Version 2.0
12
Remarks
December 4, 2009
Characteristics
Supply Section
The electrical characteristics involve the spread of values within the specified supply voltage and junction
temperature range TJ from 25 C to 125 C. Typical values represent the median values, which are
related to 25C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
Start Up Current
IVCCstart
300
550
IVCCcharge1
5.0
mA
VVCC = 0V
IVCCcharge2
0.8
mA
VVCC = 1V
IVCCcharge3
1.0
mA
IDrainIn
mA
Leakage Current of
Startup Cell and CoolMOS
IDrainLeak
0.2
50
VDrain = 610V
at Tj=100C
IVCCNM
1.5
2.3
mA
output low
Supply Current in
Auto Restart Mode with Inactive
Gate
IVCCAR
300
IFB = 0A
IVCClatch
300
IVCCburst
500
950
VVCCon
17.0
18.0
19.0
VVCCoff
9.8
10.5
11.2
VVCChys
7.5
4.3.2
Parameter
Internal Reference Voltage
Version 2.0
Symbol
VREF
Limit Values
min.
typ.
max.
4.80
5.00
5.20
13
Unit
Test Condition
Measured at pin FB
IFB=0
December 4, 2009
PWM Section
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
RFB
14
23
33
PWM-OP Gain
GPWM
3.18
3.3
VPWM
0.63
0.7
tOnMax
22
30
41
4.3.4
Current Sense
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
VCSth
0.97
1.03
1.09
tLEB
200
330
460
ns
VCSB
0.29
0.34
0.39
4.3.5
Test Condition
Soft Start
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Soft-Start time
tSS
8.5
12
ms
tSS_S1)
ms
VSS11)
1.76
VSS_S1)
0.56
1)
Test Condition
Test Condition
4.3.6
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
IZC_FS
0.35
0.5
0.621
mA
IZC_LS
1.8
2.2
mA
CS threshold minimum
VCSMF
0.66
Version 2.0
14
Test Condition
Izc=2.2mA, VFB=3.8V
December 4, 2009
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
50
100
170
mV
VZCRS
0.7
tZCRS1
1.8
2.5
3.4
tZCRS2
25
VFBR1
3.9
VFBZHL
3.2
VFBZLL
2.5
VFBZHH
2.9
VFBZLH
2.3
IZCSH
1.3
mA
IZCSL
0.8
mA
Counter time1)
tCOUNT
tOffMax
1)
48
30
42
ms
57.5
Version 2.0
15
December 4, 2009
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
1.25
VFBEB
NZC_ABM
tBEB
24
ms
VFBLB
4.5
VFBBOn
3.6
VFBBOff
fsB
52
DmaxB
0.5
4.3.9
3.0
V
kHz
Protection
Parameter
Symbol
Limit Values
min.
typ.
max.
24.0
25.0
26.0
Unit
VVCCOVP
VFBOLP
tOLP_B
20
30
44
ms
VZCOVP
3.55
3.7
3.84
tZCOVP
VCSSW
1.63
1.68
1.78
tCSSW
190
ns
TjCon
140
Note:
Test Condition
4.5
Test Condition
V
V
100
The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP
Version 2.0
16
December 4, 2009
Gate Drive
Parameter
Symbol
Limit Values
min.
VGATElow
VGATEhigh
9.0
Unit
Test Condition
VVCC=18V
IOUT = 20mA
VVCC=18V
IOUT = -20mA
1.0
V
V
VVCC = 7V
IOUT = 20mA
typ.
max.
1.0
10.0
trise
117
ns
COUT = 1.0nF
VGATE= 2V ... 8V
Fall Time
tfall
27
ns
COUT = 1.0nF
VGATE= 8V ... 2V
Version 2.0
17
December 4, 2009
Outline Dimension
PG-DIP-8-6 / PG-DIP-8-9
(Leadfree Plastic Dual In-Line Outline)
Figure 9
Dimensions in mm
Version 2.0
18
December 4, 2009
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