VLSI Timing
VLSI Timing
VLSI Timing
Spring 2012
EECS150 - Lec13-timing1
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EECS150 - Lec13-timing1
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ndby power.
low voltage
ndby current
ntage of the
bias is used
de. All core
ce and bulk
obalt disilipacitance, as
rmance and
n and data
back buffer.
Timing Analysis
ARM processor Microarch
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 11, NOVEMBER 2001
clk
a
Timing Analysis
What is the
smallest T that
produces correct T ! time(clk"
operation?
T ! #clk"Q +
Spring 2012
1 s
1 MHz
Spring 2003
10 MHz
100 ns
100 MHz
10 ns
1 GHz
1 ns
EECS150 - Lec13-timing1
EECS150 Lec10-Timi
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IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 11, NOVEMBER 2001
Clocking Methodology
CS152 / Kubiatowicz
Lec3.9
1/28/04
CS152 / Kubiatowicz
Lec3.10
Clk
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Combinational
Logic
Combination Logic
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Clk
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.
The .combination
logic blocks:
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dby power.
ow voltage
dby
bycurrent
the same
ntage of the
ias is used
e. All core
e and bulk
obalt disiliacitance,
as tick
next clock
mance and
n and data
ack buffer.
o and four
Internal Clock-to-Q
clock
Spring 2012
correctofoperation?
Cyclethis
timeensure
is a function
the critical path
Lec3.11
EECS150 - Lec13-timing1
Kubiatowicz
shown in CS152
Fig. 2,/ where
the state boundaries are indicated
1/28/04by
Lec3.11
gray. Features that allow the microarchitecture to achieve high
speed are as follows.
The shifter and ALU reside in separate stages. The ARM in-
Page
UCB Spring 2004
CS152 / Kubiatowicz
Lec3.12
EECS150 - Lec13-timing1
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Example
Parallel to serial
converter circuit
clk
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EECS150 - Lec13-timing1
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In General ...
T clkQ + CL + setup
Note:
EECS150 - Lec13-timing1
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CS152 / Kubiatowicz
Lec3.30
Vdd
Circuit
Symbol
al Oxide Semiconductor
iconductor) transistors
In
iconductor) transistors
PMOS
In
Out
Out
GND = 0v
uctor
Out
Inverter Operation
1
Vdd
Circuit
Symbol
In
Vdd
A on
p-FET fills
Vdd = 5V In
up the capacitor
with
charge.
GND = 0v
PMOS
Vdd
Vdd
!"#$%&'(#)*(+,%-$*".(/0
Open
Time
Water level
Vdd
1/28/04
Vdd
4546%,"#$3
A on n-FET
empties the bucket.
Vdd
Disc
Vin
Open
Out
Open
Discharge
Vdd
Spring 2012
Vin
CS152 / Kubiatowicz
Lec3.32
EECS150 - Lec13-timing1
Vd
Open
Charge
NMOS
CS152 / Kubiatowicz
Vout
Lec3.31
Vdd
Charge
Vout
Vdd
Out
2+.$0#$03
verter Operation
uctor
ring 2004
NMOS
Water level
Time
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CS152 / K
Lec3
Transistors as Conductors
Improved Transistor Model:
nFET
pFET
Spring 2012
EECS150 - Lec13-timing1
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Cascaded gates:
EECS150 - Lec13-timing1
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Delay in Flip-flops
clk
clk
clk
clk
Spring 2012
EECS150 - Lec13-timing1
clk
clk
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Wire Delay
Ideally, wires behave as
transmission lines:
signal wave-front moves close
to the speed of light
~1ft/ns
Time from source to
destination is called the
transit time.
In ICs most wires are short,
and the transit times are
relatively short compared to
the clock period and can be
ignored.
Not so on PC boards.
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EECS150 - Lec13-timing1
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Wire Delay
Even in those cases where the
transmission line effect is
negligible:
Wires posses distributed
resistance and capacitance
v1
v2
v3
v4
v1
v2
v3
v4
time
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EECS150 - Lec13-timing1
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EECS150 - Lec13-timing1
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Critical Path
Critical Path: the path in the entire design with the maximum
delay.
This could be from state element to state element, or from
input to state element, or state element to output, or from input
to output (unregistered paths).
Spring 2012
EECS150 - Lec13-timing1
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IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 11, NOVEMBER 2001
wer.
age
ent
the
sed
ore
ulk
ilias
and
ata
fer.
our
Spring 2012
shown in Fig. 2, where the state boundaries are indicated by
gray. Features that allow the microarchitecture to achieve high
speed are as follows.
The shifter and ALU reside in separate stages. The ARM in-
EECS150 - Lec13-timing1
Page
200
150
100
50
0
!40 !20 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280
Timing slack (ps)
From The circuit and physical design of the POWER4 microprocessor, IBM J Res and Dev, 46:1, Jan 2002, J.D. Warnock et al.
Spring 2012
Figure 26
EECS150 - Lec13-timing1
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Clock Skew
clock skew, delay in distribution
Unequal delay in distribution of the clock signal to various parts of
a circuit:
if not accounted for, can lead to erroneous behavior.
Comes about because:
clock wires have delay,
circuit is designed with a different number of clock buffers from
the clock source to the various clock loads, or
buffers have unequal delay.
All synchronous circuits experience some clock skew:
more of an issue for high-performance designs operating with very
little extra time per clock cycle.
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EECS150 - Lec13-timing1
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CLK
CLK
CL
CLK
EECS150 - Lec13-timing1
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CL
CLK
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IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 11, NOVEMBER 2001
21
Fig. 2. Microprocessor pipeline organization.
Spring 2012
EECS150 - Lec13-timing1
Page
Grid
Tuned
sector
trees
Delay
Delay
Sector
buffers
x
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Clock Tree
Delays,
IBM Power
EECS150
CPU
- Lec13-timing1
Buffer level 2
Buffer level 1
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Delay
1.5
1.0
Volts (V)
20 ps skew
0.5
0.0
0
500
1000
1500
Time (ps)
2000
2500
Figure 9
Multiplefingered
transmission
line
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