Functionarea IGCT Si IGBT
Functionarea IGCT Si IGBT
Functionarea IGCT Si IGBT
Outline
1. Introduction
2. Structure, Function and Characteristics of IGBTs
3. Structure, Function and Characteristics of IGCTs
4. Latest IGCT Technology Developments
10kV IGCTs
5. Conclusions
Power Semiconductors
IGBT
IGCT
Company
Ratings
Switch
Power
(MVA)
Case
MITSUBISHI
6000V; 6000A
36
Press-Pack
HITACHI
6000V; 6000A
36
Press-Pack
ABB
4500V; 4000A
18
Press-Pack
EUPEC
3300V; 1200A,
6500V; 600A
3.96
3.6
Module
Module
MITSUBISHI
3300V; 1200A
4500V
3.96
Module
HITACHI
3300V; 1200A
3.96
Module
TOSHIBA
3300V; 1200A
3.96
Press-Pack
ABB
4500V; 1500A
6.75
IPM
ABB
4500V; 3500A
5500V; 2300A
15.75
12.65
Press-Pack
Press-Pack
MITSUBISHI
4500V; 4000A
6000V; 6000A
18
36
Press-Pack
Press-Pack
Udc
Characteristics
Typical Turn-off Gain:
IT/IRG = 3 5
dv/dt = (500-1000) V/s
Gate
Unit
Shrinking
Plasma
A Gate
Emitter
+
Al
SiO2
-
p-
p+ +
n+
+
+
+ -
+ -
+ -
+ -
+ -
np+
B
+
A
+ -
p+
Collector
np+
...
Chip n
Solder 80 m
Aluminium oxide Isolation 380 m
Upper & lower copper
layer 300 m
Solder 80 m
Baseplate
(Copper) 3 mm
Thermal
compound 50 m
Heatsink
2.5
VCE
2.0
[kV]
IC
kA
[kA]
1.5
1.0
1.0
0.5
0
0
-2
10
12 14
18
1.2
IC
[kA]
0.8
1.0
0.4
0
-2
10 12
14 s 18
n+
n-
p+
20
1.4E+5
5000
UVAC
= =5000
VV
AC
E(PT)
1.0E+5
19
18
17
8.0E+4
16
6.0E+4
E(NPT)
15
4.0E+4
14
2.0E+4
13
0.0E+0
12
0.0
100.0
200.0
300.0
400.0
500.0
600.0
700.0
1.2E+5
Ia (kA)
Vdm
anode - voltage Vd
4
3
3
anode - current Ia
2
1
Itgq
thyristor
Tj = 90C
transistor
1
0
0
-10
gate voltage Vg
-20
Vg (V)
15
20
25
30
35
t!!m!s)
Characteristics of IGCTs
Protection:
Active turn-off transient for Ishort (t)<IAmax
(e.g. at external short circuit)
Internal shoot through:
IGCTs savely short circuit the dc-link
di/dt-clamp limits maximum peak
current
Characteristics of IGCTs
Reliability:
Low part count and press-pack case
enable high reliability
Qualification tests and field eperience:
FIT(Failure in one billion
hours)<2300
for a 3MVA inverter
kV
2250
1500
750
-750
-2
-1500
-4
0
10
15
20
Motivation of Research
- General Development Trend
Increasing importance of PWM-VSIs
Voltage definitions
100 s
VDC MAX
VDC NOM
( 15 seconds @ TJmax)
(continuous @ TJmax)
10 ms
Power Electronics Lab
All rights reserved.Prof. Bernet 9/2003-28
VDRM
Maximum
Repetitive
Blocking Voltage
VRMS (kV)
VDCMAX (kV)
VDRM (kV)
2.3
3.3
4.16
6
6.6
6.9
7.2
1.9
2.7
3.4
4.9
5.4
5.6
5.9
2.2
3.1
3.9
5.6
6.2
6.5
6.8
3.3
4.5
5.5
8
9
9.5
10
VRMS (kV)
2.3
3.3
4.16
6
6.6
6.9
7.2
Power Electronics Lab
All rights reserved.Prof. Bernet 9/2003-30
1
1
2
3
3
3
1
2
2
2
1
1
1
1
Bal.
2-Pole
Bal.
2-Pole
Bal.
2-Pole
Balancing Circuit
Dynamic voltage balancing: RC-Snubber
Static voltage balancing: balancing resistor
RSnub
CSnub
Rp
Design Tradeoffs:
low losses
CSnub
good balancing
Design Criteria
switching transient
s
Power Electronics Lab
All rights reserved.Prof. Bernet 9/2003-33
Blocking
ms
current
sensor
Buck Converter
VDC=6 kV, Iout=4 kA
n=2
91mm 4.5kV IGCTs
68mm 4.5kV diodes
Snubber
Rsnub=1
Csnub= 500 nF
Rp=25 k
R snub
C
snub
Rp
101
102
103
104
105
time (s)
Losses
VDC = 4.5 kV, Iout = 2 kA
10
Losses (J)
9.28
8.5
snubberless
with snubber
8
6.4
6
4
2
1.6
0.5
0.65
0.63
V4
14.2kV
Vout
Iout
-5
-1
-10
-2
20
Iout
10
Time / ms
VDC=14.2kV; Iout,rms=1.5kA;
fs=700Hz; fout=50Hz
15
Load
Load
Inductor
Inductor
0,9m
IGCT-Stack
IGCT-Stack
RC-Snubber
RC-Snubber
Power Electronics Lab
All rights reserved.Prof. Bernet 9/2003-39
J=20A/cm2
Power Electronics Lab
All rights reserved.Prof. Bernet 9/2003-40
Design of 10 kV IGCTs
Cathod
e
Gate
p Base
n+ Cathode
Anode
1050 m
n Base
process
n Buffer
Layer
Low Efficiency
p - Anode
On-state Characteristics
VT = VT0 + rdIA
VT0 (Threshold voltage): 3.5V
Rd (On-state resistance):1m
Power Electronics Lab
All rights reserved.Prof. Bernet 9/2003-46
Turn-off Characteristics
L
D
Lh
D
1R
Cbat
1R
27k
0,68uF
C
0,68uF
27k
DUT
1R
1R
27k
0,68uF
27k
0,68uF
Turn-off Waveforms
Switching characteristics:
VDC=5.7 kV, IA=900 A,Tj=85C: Eoff=11 Ws, tf=1 s, ttail=6 s, VAK,max=6.7 kV
Power Electronics Lab
All rights reserved.Prof. Bernet 9/2003-48
Turn-off Waveforms
VAK [V] 1kV / div
Switching characteristics:
VDC=5.7kV, IA=900A: Eoff=11 Ws, VAK,max=6.6kV, tf=1s, ttail=6s
Power Electronics Lab
All rights reserved.Prof. Bernet 9/2003-49
Operating conditions:
VDC=7kV, IA=1000A, Tj=85C
World Record !
Switching characteristics:
Eoff=14.8 J, VAK,max=8 kV, toff=8s, tf=1s, ttail=5s
Power Electronics Lab
All rights reserved.Prof. Bernet 9/2003-50
Conditions
VDRM
10 kV
Tj = 0 - 125 C
VDC
6 kV
VGR
22 V
VTM
4.5 V
ITGQ
1000 A
VDC = 6 kV
EOFF
11 Ws
IA = 1000 A, VDC = 6 kV
Rth J-C
13 K/kW
TJ MAX
125C
ITSM
10 kA
T = 1ms
Conclusions
IGBTs and IGCTs replace GTOs in MV Converters
Advantages of IGBTs
IGBT MOS-controlled device
Low power GU
Active clamping
Simple mechanics
Simple scalability
Conclusions
Disadvantages of IGBTs
Higher losses and poorer Si-utilization than IGCTs
Limited power cycling capability of IGBT modules
Costs (especially of IGBT press packs)
Development trends
Reduction of losses and costs by new technologies
and high volume production
Applications of HV - IGBTs
1. Traction Converters (LSC, MSC)
2. Energy Systems (e.g. HVDC, SVC)
3. Industrial Medium Voltage Drives
Conclusions
Advantages of IGCTs
Maximum Silicon Utilization Low costs / MVA
Small Part Count + Press pack
High Reliability + Explosion Free Inverters
Low On-state and Total Losses
High Efficiency and Power Density
4.5 kV / 5.5 kV IGCT product family
300 kVA-10 MVA Inverters without Series or
Parallel Connection
Conclusions
Disadvantages of IGCTs
Shoot through protection
High mechanical stress for IM / SM
Thyristor structure
No dv/dt or di/dt control Clamp
Larger gate drive power and size
Conclusions
Development trends
IGCT: Mature device
Increase of device voltage (e.g. 10kV IGCT)
Increase of Tjmax (e.g Tjmax=175C).
Low cost, efficient series connection
Applications of IGCTs
1. Industrial Medium Voltage Drives
2. Energy Systems
- Railway Interties
- Power Quality Products
- e.g. Dynamic Voltage Restorer
- Wind Energy Systems