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    4 Probe

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    Sayyed Salman
    This document describes an experiment using the four probe method to determine the temperature dependence of conductivity and energy band gap of a thin film of germanium. It introduces the theory behind measuring conductivity in semiconductors and the four probe apparatus. The results of measurements taken at different temperatures are presented in a table and graph. From the graph slope, the energy band gap of the germanium sample is calculated to be 0.62eV, with an estimated 10.14% experimental error compared to the actual value of 0.69eV.

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    4 Probe

    Uploaded by

    Sayyed Salman
    196 views7 pages
    This document describes an experiment using the four probe method to determine the temperature dependence of conductivity and energy band gap of a thin film of germanium. It introduces the theory behind measuring conductivity in semiconductors and the four probe apparatus. The results of measurements taken at different temperatures are presented in a table and graph. From the graph slope, the energy band gap of the germanium sample is calculated to be 0.62eV, with an estimated 10.14% experimental error compared to the actual value of 0.69eV.

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    This document describes an experiment using the four probe method to determine the temperature dependence of conductivity and energy band gap of a thin film of germanium. It introduces the theory behind measuring conductivity in semiconductors and the four probe apparatus. The results of measurements taken at different temperatures are presented in a table and graph. From the graph slope, the energy band gap of the germanium sample is calculated to be 0.62eV, with an estimated 10.14% experimental error compared to the actual value of 0.69eV.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    196 views7 pages

    4 Probe

    Uploaded by

    Sayyed Salman
    This document describes an experiment using the four probe method to determine the temperature dependence of conductivity and energy band gap of a thin film of germanium. It introduces the theory behind measuring conductivity in semiconductors and the four probe apparatus. The results of measurements taken at different temperatures are presented in a table and graph. From the graph slope, the energy band gap of the germanium sample is calculated to be 0.62eV, with an estimated 10.14% experimental error compared to the actual value of 0.69eV.

    Copyright:

    © All Rights Reserved
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    of 7

    Four Probe Method

    Salman Suhail
    M.Sc Physics
    14510042
    salman.suhail@iitgn.ac.in
    April 11, 2016

    Physics Lab Report

    IIT GANDHINAGAR

    Contents
    1 ABSTRACT

    2 INTRODUCTION

    3 THEORY

    4 FOUR PROBE APPARATUS AND ITS WORKING

    5 CALCULATION

    6 ERROR

    7 CONCLUSION

    8 REFRENCES

    Page 2

    Physics Lab Report

    IIT GANDHINAGAR

    ABSTRACT

    In this experiment our motto is to find the Temperature dependence of conductivity and band gap
    measurement of thin film of germanium (Ge) and to determine energy band gap of thin film of Germanium semiconductor which is deposited on a non-conducting substrate.

    INTRODUCTION

    For a material,Electrical conductivity is a very important property.It is defined as the availability of


    free electrons in the material,As we know that metals has more free electrons than semiconductor
    and insulator has no free electrons.So conductivity is higher for metals than semiconductor and
    Insulator.In metals conductivity decreases with increase in temperature but as far as the semiconductors is concerned, conductivity increases with temperature because of the formation of Cooper
    pairs and hence the creation of phonon field.Band gap energy in semiconductor be the order of
    eV(Ge=0.69eV,Si=1.1eV).So as the temperature is increases electrons go from valence band to
    conduction band as temperature increases more, more number of electrons move towards the conduction band and increase conductivity also.

    THEORY

    According to the band theory of solids,insulators and semiconductors are materials which posses a
    band gap at the fermi level.These are classified on the basis of Band gap and it makes a difference
    between Semiconductor and insulators.In Semiconductors the band gap is small enough,so that at
    finite temeratures electrons can cross the energy band gap between valence band and conduction
    band and it leads to a small but measurable conductivity but this excercise can not be repeated in
    case of insulators.
    Figure 1: energy band diagram of intrinsic semiconductor

    The process in which thermally excited electrons contribute to the conduction is called intrinsic
    semi-conduction.Intrinsic semi-conduction takes place at temperatures above 0K as sufficient thermal agitation is required to transfer electrons from the valence band to the conduction band.

    Page 3

    Physics Lab Report

    IIT GANDHINAGAR

    Concentration of electrons in intrinsic semiconductor is determined by the following formula3


    
    (Ec Ef )
    2me KT 2
    n=2
    exp
    (1)
    2
    h
    KT
    And Concentration for Holes given by this equation
    3
    (Ev Ef )
    2mh KT 2
    p=2
    exp
    h2
    KT
    On multiplying first and second equation we get3
    
    3
    Eg
    2KT 2
    (me mh ) 2 exp
    np = 4
    2
    h
    KT
    Where
    me =mass of electron, mh =mass of hole
    Eg =energy band gap
    T =temperature
    in case of intrinsic semiconductor concentration of electrons and holes is same.so
    
    3
    3
    Eg
    2KT 2
    4 exp
    ni = p i = 2
    (m
    m
    )
    e
    h
    h2
    2KT

    (2)

    (3)

    (4)

    conductivity in intrinsic semiconductor which is found due to both electrons and holes, it will be
    the sum of contributions of both electrons and holes:
    = e(e ni + pi h )

    (5)

    Where e is the electron charge.e and h are the average velocities aquired by the electrons and
    holes in a unit electric field and known as mobilities.Or = eni (e + h )

    (6)

    Now

    Eg
    (7)
    2KT
    Where C is a constant The factor T 3/2 and the mobilities change relatively slow with temperature
    compared with the exponential term, and hence the logarithm of resistivity (= 1 ) varies linearly
    with 1/T. The width of the energy gap may be determined from the slope of the curve.
    On taking the log on both sides
    Eg
    loge =
    loge C
    (8)
    2kT
    On changing the base of log on 10.
    3

    = CT 2 (e + h ) exp

    1 Eg
    A
    2.303 2kT

    (9)

    Eg 103
    1
    A
    3
    2.303 10
    2kT

    (10)

    log1 0 =
    log1 0 =

    So from above equation, plot between log10 and 10T will be a straight line and by finding its slope
    we can calculate energy band gap(Eg )by using following formula- Eg = 2.303 103 2k slope
    where k = 8.617 103 eV K 1 Eg = slope 0.396eV
    Page 4

    Physics Lab Report

    IIT GANDHINAGAR

    FOUR PROBE APPARATUS AND ITS WORKING

    The experimental set up consists of (1) probe arrangement (2) sample (3) Oven,thermometer
    (0200degreeC).(4)constant current generator (5) oven power supply (6) digital meter.
    Our concern to find the conductivity by using four probe method in which four equally spaced
    (s = 2.00mm) tungsten tips with finite radius probe are used as shown in figure.We are using movable probes here which can be done up and down by some kind of spring mecha- nism.
    Semiconductor has nonconducting base on which these four probes are situated. .These probes
    are used to measure current which passes through semiconductor and voltage.Outer two probes
    measure cur- rent and voltage is measured by inner probes.

    If we do compare between four probe and two probe than we find that,Four probe method is better
    than two probe method because two probe method can not be used for materials of random shapes
    Page 5

    Physics Lab Report

    IIT GANDHINAGAR

    and there is some er- ror due to contact resistance but these types of problems donot happen in
    four probe method.One point should be very clear in mind that,Tip diameter of probe should be
    lesser compared to the spacing be- tween probes. we can find resistivity of material using following
    formulav
    0 = 2 s
    (11)
    I
    Actually in above formula, Resistivity that we find is not actual value of conductivity, we have to
    add a correction factor to make it correct and to get more accurate result.
    =

    0
    
    G7 ws

    (12)

    This correction factor de- pends on bottom surface whether it is conducting or non-conducting.Here
    in our experiment bottom surface is non-conducting.With the help of lab manual and after consulting to lab incharge
    am taking the value of
    
    
    In this case ws = 0.25 corresponding G7 ws = 5.905

    CALCULATION

    We measure voltage at different different temperature by keeping current fixed. data which are
    given in table At current=10 mA
    Sl no.
    1
    2
    3
    4
    5
    6
    7
    8
    9
    10
    11
    12
    13

    Temp T
    308
    313
    318
    323
    328
    333
    338
    343
    348
    353
    358
    363
    368

    Voltage(mV)
    81.8
    76.1
    72.5
    65.7
    59.5
    52.3
    45.6
    39.2
    34.0
    28.7
    25.0
    21.6
    18.5

    = ( cm)
    17.42
    16.20
    15.44
    13.99
    12.67
    11.14
    9.71
    8.35
    7.24
    6.11
    5.32
    4.60
    3.94

    T 1
    3.24
    3.19
    3.14
    3.10
    3.04
    3.00
    2.95
    2.92
    2.87
    2.83
    2.79
    2.75
    2.71

    log10
    1.241
    1.21
    1.18
    1.14
    1.10
    1.04
    0.98
    0.92
    0.85
    0.78
    0.32
    0.66
    0.59

    Page 6

    Physics Lab Report

    IIT GANDHINAGAR

    From this plot which is draw between log10 and


    So Energy Band Gap Eg will be counted as-

    1000
    T

    slope is 1.5834

    Eg = slope 0.396eV = 1.5834 0.396eV = 0.62eV


    Thus finally we get Energy Band Gap for the Germanium Sample as
    Eg = 0.62 eV

    ERROR

    As we know percentage error given by formulaalue


    P ercentageerror = ActualV alueExperimentalV
    100
    ActualV alue
    actual value of energy band gap =0.69eV
    Experimental value of energy band gap=0.62 eV
    percentage error= 0.690.62
    100
    0.69
    percentage error=10.14

    CONCLUSION

    In this experiment we saw that on plotting a graph between logarithm of resistivity and 1000
    T we
    found a straight line.And we calculate the energy band gap (Eg ) which is equal to 0.62 eV.

    REFRENCES

    1.Geeta Sanon Practical Physics


    2.Four Probe Wikipedia
    3.Lab Manual
    4.Google

    Page 7

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