Irf 9 Z 24 N

PD -9.
1484B
IRF9Z24N
HEXFET Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
l 175C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
l
VDSS = -55V
RDS(on) = 0.175
ID = -12A
S
Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings

ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V

Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
-12
-8.5
-48
45
0.30
20
96
-7.2
4.5
-5.0
-55 to + 175
Units
A
W
W/C
V
mJ
A
mJ
V/ns
C
300 (1.6mm from case )

10 lbfin (1.1Nm)
Thermal Resistance
Parameter
RJC
RCS
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
0.50
3.3
62
C/W
8/27/97
IRF9Z24N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-55
-2.0
2.5
Typ.
-0.05
13
55
23
37
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
4.5
LS
Internal Source Inductance
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
350
170
92
V(BR)DSS
V(BR)DSS/TJ
I GSS
Max. Units
Conditions
V
VGS = 0V, ID = -250A
V/C Reference to 25C, I D = -1mA
0.175
VGS = -10V, I D = -7.2A

-4.0
V
VDS = VGS , ID = -250A
S
VDS = -25V, I D = -7.2A
-25
VDS = -55V, VGS = 0V
A
-250
VDS = -44V, VGS = 0V, T J = 150C
100
V GS = 20V
nA
-100
VGS = -20V
19
ID = -7.2A
5.1
nC VDS = -44V
10
V GS = -10V, See Fig. 6 and 13
VDD = -28V
I D = -7.2A
ns
RG = 24
RD = 3.7, See Fig. 10

Between lead,
6mm (0.25in.)
nH
G
from package
and center of die contact
VGS = 0V
pF
VDS = -25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics

IS
ISM
VSD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
-12
showing the
A
G
integral reverse
-48
p-n junction diode.
S
-1.6
V
TJ = 25C, IS = -7.2A, VGS = 0V
47
71
ns
TJ = 25C, IF = -7.2A
84 130
C di/dt = -100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )
Starting TJ = 25C, L = 3.7mH

RG = 25, IAS = -7.2A. (See Figure 12)
ISD -7.2A, di/dt -280A/s, VDD V(BR)DSS,

TJ 175C
Pulse width 300s; duty cycle 2%.
IRF9Z24N
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
10
10
-4.5 V
-4.5 V
1
0.1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
TOP
-ID , D ra in -to -S o u rc e C u rre n t (A )
-ID , D ra in -to -S o u rce C u rre n t (A )
100
2 0 s PU LS E W ID TH
TJ
c = 2 5C
TOP
10
100
0.1
-VD S , Drain-to-Source Voltage (V)
2.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
- I D , D ra in-t o-S o urc e C urre nt (A )
TJ = 2 5 C
TJ = 1 7 5 C
V DS = -2 5 V
2 0 s P U L S E W ID T H
4
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics,
100
-VD S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics,
10
20 s PU LSE W ID TH
TCJ = 1 75C
10
I D = -12 A
1.5
1.0
0.5
VG S = -10 V
0.0
-60 -40 -20
20
40
60
80
100 120 140 160 180
T J , Junction T emperature (C)
Fig 4. Normalized On-Resistance

Vs. Temperature
IRF9Z24N
20
V GS
C is s
C rs s
C os s
C , C a p a c ita n c e (p F )
600
500
C is s
400
C os s
=
=
=
=
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
-V G S , G a te -to -S o u rc e V o lta g e (V )
700
300
C rs s
200
100
0
10
V DS = -4 4V
V DS = -2 8V
16
12
FO R TEST C IR C U IT
SEE F IGU R E 1 3
A
1
I D = -7.2 A
100
V D S , Drain-to-Source V oltage (V)
10
15
20
A
25
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage
100
100
O PER ATIO N IN TH IS AR EA LIM ITED

BY R D S(o n)
1 0s
-I D , D ra in C u rre n t (A )
-IS D , R e ve rse D ra in C u rre n t (A )
TJ = 1 50C
10
TJ = 25 C
10
100 s
1m s
VG S = 0 V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
T C = 2 5C
T J = 1 75C
Sin gle Pu lse
1
1
10m s
10
-VS D , S ource-to-Drain V oltage (V )
-VD S , Drain-to-Source V oltage (V )
Fig 7. Typical Source-Drain Diode

Forward Voltage
Fig 8. Maximum Safe Operating Area
100
IRF9Z24N
12
RD
VDS
-ID , D ra i n C u rre n t (A m p s )
VGS
9
D.U.T.
RG
VDD
-10V
6
Pulse Width 1 s
Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit

3
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
150
10%
175
TC , C ase T emperature (C)

90%
Fig 9. Maximum Drain Current Vs.

Case Temperature
VDS
Fig 10b. Switching Time Waveforms
T herm al R esponse (Z th J C )
10
D = 0 .5 0
1
0 .2 0
0 .1 0
0 .0 5
0.1
PDM
0 .0 2
0 .0 1
S IN G LE P U L S E
(T H E R M A L R E S P O N S E )
1
t
Notes :
1. D uty fac tor D = t
0.01
0.00001
/t
2. P ea k TJ = P DM x Z th JC + T C
0.0001
0.001
0.01
0.1
t 1 , R ectan gular P ulse D uratio n (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
IRF9Z24N
D .U .T
RG
IA S
- 20V
tp
VD D
A
D R IV E R
0 .0 1
15V
Fig 12a. Unclamped Inductive Test Circuit
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
250
VDS
TO P
B OTTO M
200
150
100
50
A
25
I AS
ID
-2.9A
-5.1 A
-7.2 A
50
75
100
125
150
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.
50K
QG
12V
.3F
-10V
QGS
.2F
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRF9Z24N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
dv/dt controlled by RG
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
RG
VGS
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive

P.W.
Period
D=
P.W.
Period
] ***
VGS=10V
D.U.T. ISD Waveform

Reverse
Recovery
Current
Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
[
Ripple 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS
]
ISD
IRF9Z24N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )
-B -
3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A -
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 )
M IN
1
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
3X
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )
0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )
3X
M
B A
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information

TO-220AB
E XPLE
AM PLE
N 1010
IRF 1010
E X AM
: T:HI TSHIISS AISN AIRF
S ELY
MB LY
W ITWH ITAHS SAESMB
T DE
CO DE
9B 1M
LO TLOCO
9B 1M
INRTE
T ION
IN TE
NARTNA
ION
AL AL
T IF IER
R ECRTEC
IF IER
F 1010
IR F IR
1010
LO GO
LO GO
9246
9246
9B 9B1M 1M
S SBEM
A S SAEM
LYB LY
LO
T
CO DE
LO T CO DE
P A RT
NU
P A RT
NU M
BEMRBE R
D A TE
D A TE
C ODCEOD E
(Y
YW
(Y YW W ) W )
= AYE
Y Y Y=Y YE
R AR
W WW =W W= EW
EKE EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

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PD -9.

Fifth Generation HEXFETs from International Rectifier

Absolute Maximum Ratings

Continuous Drain Current, VGS @ -10V

300 (1.6mm from case )

Gate-to-Source Forward Leakage

Drain-to-Source Leakage Current

Internal Drain Inductance

Internal Source Inductance

VGS = -10V, I D = -7.2A

RD = 3.7, See Fig. 10

and center of die contact

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Min. Typ. Max. Units

Repetitive rating; pulse width limited by

Starting TJ = 25C, L = 3.7mH

ISD -7.2A, di/dt -280A/s, VDD V(BR)DSS,

Pulse width 300s; duty cycle 2%.

-ID , D ra in -to -S o u rc e C u rre n t (A )

-ID , D ra in -to -S o u rce C u rre n t (A )

-VD S , Drain-to-Source Voltage (V)

- I D , D ra in-t o-S o urc e C urre nt (A )

-VG S , Ga te-to-S o urce V oltage (V )

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics,

-VD S , Drain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics,

100 120 140 160 180

T J , Junction T emperature (C)

Fig 4. Normalized On-Resistance

V D S , Drain-to-Source V oltage (V)

Q G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

O PER ATIO N IN TH IS AR EA LIM ITED

-IS D , R e ve rse D ra in C u rre n t (A )

-VS D , S ource-to-Drain V oltage (V )

-VD S , Drain-to-Source V oltage (V )

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Fig 10a. Switching Time Test Circuit

TC , C ase T emperature (C)

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

t 1 , R ectan gular P ulse D uratio n (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 12a. Unclamped Inductive Test Circuit

Starting T J , Junction Temperature (C)

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms

Fig 13a. Basic Gate Charge Waveform

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Circuit Layout Considerations

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

D.U.T. ISD Waveform

Body Diode Forward