4 PC 40 U
4 PC 40 U
4 PC 40 U
IRG4PC40U
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package
C
VCES = 600V
G E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Max.
600 40 20 160 160 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm)
Units
V A
V mJ W
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
---------------------
Typ.
-----0.24 -----6 (0.21)
Max.
0.77 -----40 ------
Units
C/W g (oz)
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1
12/30/00
IRG4PC40U
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Min. 600 18 ------------Gate Threshold Voltage 3.0 VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance U 11 ---ICES Zero Gate Voltage Collector Current ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES V(BR)ECS Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage T V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Typ. ------0.63 1.72 2.15 1.7 ----13 18 ------------Max. Units Conditions ---V VGE = 0V, IC = 250A ---V VGE = 0V, IC = 1.0A See Fig. 2, 5 ---- V/C VGE = 0V, IC = 1.0mA 2.1 IC = 20A VGE = 15V ---V IC = 40A ---IC = 20A, TJ = 150C 6.0 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 20A 250 VGE = 0V, VCE = 600V 2.0 A VGE = 0V, VCE = 10V, TJ = 25C 2500 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V
T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot.
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IRG4PC40U
80
F o r b o th :
T ria ng u la r w a v e :
60
C la m p v o lta g e : 8 0 % o f ra te d
S q u a re w a v e : 40 6 0 % o f ra ted v o ltag e
20
Id e a l d io d e s
0 0.1 1 10
A
100
f, Frequency (kHz)
1000
1000
100
100
TJ = 25C T J = 150C
TJ = 1 5 0 C
T J = 2 5 C
10
10
1 0.1 1
1 4 6 8
VCC = 10V 5 s P U L S E W ID T H A
10 12
IRG4PC40U
40
V G E = 15V
2.5
30
2.0
20
I C = 20A
1.5
10
I C = 10A
0 25 50 75 100 125
A
150
A
140 160
Therm al Response (Z th JC )
D = 0 .5 0
0.2 0
0 .1
0.1 0 0 .05 SIN G LE P UL SE (T H ER M A L R E SP O NS E )
N o te s: 1 . D u ty fa c to r D = t 1 / t2
PD M
1 t2
0.0 2 0.0 1
0 .0 1 0 .0 0 0 0 1
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
10
IRG4PC40U
4000 20
V GE = C ie s = C re s = C oes =
0V, f = 1M H z C ge + C gc , Cc e S H O R T E D C gc C ce + C gc
16
3000
C ie s
12
2000
C o es
1000
C re s
0 1 10
A
100
0 0 20 40 60 80 100
A
120
Q g , To ta l G a te C h a rg e (n C )
1.1
1.0
VC C VG E TJ IC
10
0.9
I C = 20A
1
0.8
I C = 10A
0.7
0.6 0 10 20 30 40 50
A
60
A 160
R G , Gate Resistance ( )
IRG4PC40U
4.0
3.0
RG TJ V CC V GE
= = = =
1000
VG E E 2 0V G= T J = 125 C
100
S A FE O P E R A TIN G A R E A
2.0
10
1.0
0.0 0 10 20 30 40 50
1 1 10 100 1000
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IRG4PC40U
L 50V 1 00 0V VC *
D .U .T.
RL = 0 - 480V 480V 4 X IC@25C
480F 960V R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.
D .U .T. VC
9 0%
S
1 0% 90 %
VC
t d (o ff)
10 % IC 5% t d (o n )
tr E on E ts = ( Eo n +E o ff )
tf t=5 s E o ff
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IRG4PC40U
Case Outline and Dimensions TO-247AC
3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7)
-D-
5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4
2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3
2X
5 .5 0 (.2 17 ) 4 .5 0 (.1 77 )
-C-
LEAD 1234-
1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 )
4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 )
*
3X C A S 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 )
2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X
3X
3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00
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