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Semiconductor Technology: ELCT 705 Midterm Exam (Fall 2014) Course Instructor: Dr. Hassan Mostafa

This document is a midterm exam for a Semiconductor Technology course. It consists of multiple choice and short answer questions to be completed within 90 minutes. The exam instructions specify that students must answer all questions, show their work, and cannot use external references as it is closed book. A cheat sheet with relevant semiconductor formulas and constants is provided for reference on the exam.

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Mohab Sameh
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34 views

Semiconductor Technology: ELCT 705 Midterm Exam (Fall 2014) Course Instructor: Dr. Hassan Mostafa

This document is a midterm exam for a Semiconductor Technology course. It consists of multiple choice and short answer questions to be completed within 90 minutes. The exam instructions specify that students must answer all questions, show their work, and cannot use external references as it is closed book. A cheat sheet with relevant semiconductor formulas and constants is provided for reference on the exam.

Uploaded by

Mohab Sameh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Midterm Exam

Semiconductor Technology (ELCT705)

Time allowed :90 minutes

Faculty of Information
Engineering & Technology (IET)
Electronics Engineering Dept.

Semiconductor Technology: ELCT 705


Midterm Exam (Fall 2014)
Course Instructor: Dr. Hassan Mostafa

Bar Code

Instructions:
1. Answer all questions.
2. The exam consists of xx questions in xx pages.
3. A cheat sheet is attached at end of this booklet.
4. The exam allowed time is 90 minutes.
5. Electronic calculators are allowed.
6. Clearly show all steps used in your solutions.
7. This is a closed book exam.
Please, do not write anything on this page
Question

Total Mark

Mark
Out of

Midterm Exam

Semiconductor Technology (ELCT705)

Time allowed :90 minutes

Cheat sheet:
You may make use of the following
Semiconductor devices
Diode built-in voltage and
depletion region width:

MOSFET Threshold voltage:

Wafer Selection
Wafer resistivity:
CZ maximum pulling speed:
Segregation coefficient:

Photolithography
Photolithography and
Numerical Aperture:

Depth of focus:
Modulation Transfer Function:
Proximity system minimum feature size:
Resist contrast:
Resist critical MTF:

Ion Implantation and Dopant diffusion


Ion radius of curvature:
Approximation of Range and Straggle:
Ion dose:
2

Midterm Exam

Semiconductor Technology (ELCT705)

Time allowed :90 minutes

Number of displaced atoms:


Time that an ion takes to come to rest:
Criterion of efficient masking:
Mask thickness:
Diffusion concentration:
Diffusion dose:
Diffusion coefficient:

erfc(z) (0.56/z)*exp(-z2)
erfc(z) 1.12*z

for z>>1
for z<<1

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