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    This document provides details for Problem Set #5 assigned in the EE 143 Microfabrication Technology course. It includes 4 questions related to oxidation processes in microfabrication. Question 1 involves determining oxidation time and thickness changes based on given conditions. Question 2 involves a double patterning process and determining dimensions that result in equal widths and spacings. Question 3 considers using wet oxidation instead of dry for the process in Question 2. Question 4 involves oxidizing an entire polysilicon film of a given thickness.

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    hw5 Ee143 f14 Web

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    This document provides details for Problem Set #5 assigned in the EE 143 Microfabrication Technology course. It includes 4 questions related to oxidation processes in microfabrication. Question 1 involves determining oxidation time and thickness changes based on given conditions. Question 2 involves a double patterning process and determining dimensions that result in equal widths and spacings. Question 3 considers using wet oxidation instead of dry for the process in Question 2. Question 4 involves oxidizing an entire polysilicon film of a given thickness.

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    This document provides details for Problem Set #5 assigned in the EE 143 Microfabrication Technology course. It includes 4 questions related to oxidation processes in microfabrication. Question 1 involves determining oxidation time and thickness changes based on given conditions. Question 2 involves a double patterning process and determining dimensions that result in equal widths and spacings. Question 3 considers using wet oxidation instead of dry for the process in Question 2. Question 4 involves oxidizing an entire polysilicon film of a given thickness.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    106 views3 pages

    hw5 Ee143 f14 Web

    Uploaded by

    stansilaw
    This document provides details for Problem Set #5 assigned in the EE 143 Microfabrication Technology course. It includes 4 questions related to oxidation processes in microfabrication. Question 1 involves determining oxidation time and thickness changes based on given conditions. Question 2 involves a double patterning process and determining dimensions that result in equal widths and spacings. Question 3 considers using wet oxidation instead of dry for the process in Question 2. Question 4 involves oxidizing an entire polysilicon film of a given thickness.

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    Download as pdf or txt
    of 3

    EE 143

    MICROFABRICATION TECHNOLOGY

    FALL 2014
    C. Nguyen

    PROBLEM SET #5
    Issued: Tuesday, Oct. 1, 2014
    Due: Wednesday, Oct. 8, 2014, 8:00 a.m. in the EE 143 homework box near 140 Cory

    Oxidation
    For this problem set, assume the atom density of pure Si is 5 1022 3 and the
    molecular density of SiO2 is 2.2 1022 3.
    1. The structure shown below has gone through the following process steps:

    400 nm

    SiO2

    Xox

    n+
    d
    Step 6)
    1)
    2)
    3)
    4)
    5)
    6)
    7)

    P-Si

    Xox

    Xox

    Step 7)

    n+
    P-Si

    Start with a bare <100> silicon wafer


    Grow 400 nm of oxide
    Lithography
    Dry etch 400 nm of oxide
    Remove P.R.
    Diffuse phosphorous (n+)
    Wet oxidation for t minutes

    Assume that the linear oxidation rate constants are (B/A)n+ = 4(B/A)p= 0.4 m/hr (i.e.,
    the surface reaction rate increases when phosphorous is present), and the parabolic
    constants are (B)n+ = (B)p= 0.2 m2 / hr. Determine t, d, and Xox.
    2. In order to achieve patterns with dimensions smaller than the minimum feature size of
    a photolithography tool, a double-patterning technique can be used. The following
    process flow illustrates one example that eventually creates patterns on the Si substrate
    with a double density (i.e., eight stripes on the Si substrate vs. four stripes on the mask)
    and a feature size smaller than that achieved by the photolithography step.
    1) Start with a Si wafer
    2) Deposit 0.3 m of Si3N4 and 1 m of polysilicon consecutively
    3) Photolithography (Positive P.R.)

    EE 143

    MICROFABRICATION TECHNOLOGY

    FALL 2014
    C. Nguyen

    4)
    5)
    6)
    7)

    Dry etch 1 m of Si
    Remove P.R.
    Grow tox (nm) of SiO2 on polysilicon surface in Dry O2 at 1000C for t minutes.
    Dry etch tox (nm) of SiO2 (with 100% anisotropy) to expose the top Si layer
    surface and leave oxide on the sidewalls (untouched)
    8) Dry etch polysilicon to remove the entire polysilicon material
    9) Dry etch 0.3 m of Si3N4 (with 100% anisotropy) to expose the Si substrate
    10) Dry etch h (m) of Si
    11) Remove SiO2 and Si3N4 in wet etchants

    Suppose that the following mask is used here. The corresponding cross-sections along
    AA plane through step 2) and 11) are also shown below.
    Clear

    Chrome

    A
    d1 d2

    Mask
    1 m

    Polysilicon

    0.3 m
    Si3N4

    Step 2)

    Si Substrate

    w2
    h
    w1

    Step 11)

    Si Substrate

    (a) Plot qualitatively the cross-sections of AA plane through step 6) and 10).

    EE 143

    MICROFABRICATION TECHNOLOGY

    FALL 2014
    C. Nguyen

    (b) Assuming that 2 = 250 , determine the dimension of 1 and the oxidation
    time t (i.e., in step 6)) required to yield a final cross-section which has the same
    dimension for the width of Si walls and the spacing between the Si walls (i.e., 1 =
    2 in the cross-section of Step 11) shown above). (Assume that polysilicon has the
    same oxidation rate as <111> Si and has an atom density of 5 1022 3 as
    single crystalline Si.)
    (c) Continuing from (b), now suppose that only wet oxidation is available in step 6)
    with temperatures ranging from 800 to 1200C. From a process control point of
    view, an oxidation time > 10 minutes is required. Determine if wet oxidation allows
    a well-controlled process to grow the oxide with the thickness calculated in (b).
    (d) Now, suppose you need to realize a continuous oxide film as shown below by
    oxidizing the entire polysilicon material during step 6). Assuming d2 = 1 m here
    and dry oxidation is done at 1000C, find the required dimension for d1.

    d1 d2

    Polysilicon

    1 m
    0.3 m

    Si3N4

    Step 5)

    Si Substrate

    SiO2
    Si3N4

    Step 6)

    Si Substrate

    3. Problem 3.6, 3.9, 3.13 in the textbook (Jaeger).

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