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CC1200
SWRS123D JULY 2013 REVISED OCTOBER 2014
CC1200 Low-Power, High-Performance RF Transceiver

1 Device Overview
1.1
Features
RF Performance and Analog Features:

High-Performance, Single-Chip Transceiver
Excellent Receiver Sensitivity:
123 dBm at 1.2 kbps
109 dBm at 50 kbps
Blocking Performance: 86 dB at 10 MHz
Adjacent Channel Selectivity: Up to 60 dB at
12.5-kHz Offset
Very Low Phase Noise: 114 dBc/Hz at
10-kHz Offset (169 MHz)
Programmable Output Power Up to +16 dBm
With 0.4-dB Step Size
Automatic Output Power Ramping
Supported Modulation Formats:
2-FSK, 2-GFSK, 4-FSK, 4-GFSK, MSK, OOK
Supports Data Rate Up to 1.25 Mbps in
Transmit and Receive
Low Current Consumption:
Enhanced Wake-On-Radio (eWOR)
Functionality for Automatic Low-Power Receive
Polling
Power Down: 0.12 A (0.5 A With eWOR
Timer Active)
RX: 0.5 mA in RX Sniff Mode
RX: 19 mA Peak Current in Low-Power
Mode
RX: 23 mA Peak Current in HighPerformance Mode
TX: 46 mA at +14 dBm
Other:
Data FIFOs: Separate 128-Byte RX and TX
Support for Seamless Integration With the
CC1190 Device for Increased Range Providing
up to 3-dB Improvement in RX Sensitivity and
up to +27 dBm TX Output Power
1.2
Digital Features:
WaveMatch: Advanced Digital Signal
Processing for Improved Sync Detect
Performance
Security: Hardware AES128 Accelerator
Data FIFOs: Separate 128-Byte RX and TX
Includes Functions for Antenna Diversity
Support
Support for Retransmission
Support for Auto-Acknowledge of Received
Packets
Automatic Clear Channel Assessment (CCA) for
Listen-Before-Talk (LBT) Systems
Built-in Coding Gain Support for Increased
Range and Robustness
Digital RSSI Measurement
Improved OOK Shaping for Less Occupied
Bandwidth, Enabling Higher Output Power While
Meeting Regulatory Requirements
Dedicated Packet Handling for 802.15.4g:
CRC 16/32
FEC, Dual Sync Detection (FEC and non-FEC
Packets)
Whitening
General:
RoHS-Compliant 5-mm x 5-mm No-Lead QFN
32-Pin Package (RHB)
Pin-Compatible With the CC1120 Device
Regulations Suitable for Systems Targeting
Compliance With
Europe: ETSI EN 300 220, EN 54-25
US: FCC CFR47 Part 15, FCC CFR47 Part 90
Japan: ARIB STD-T30, T67, T108
Applications
Low-Power, High-Performance, Wireless Systems

With Data Rate Up to 1250 kbps
ISM/SRD Bands: 169, 433, 868, 915, and
920 MHz
Possible Support for Additional Frequency Bands:
137 to 158.3 MHz, 205 to 237.5 MHz, and 274 to
316.6 MHz
Smart Metering (AMR/AMI)
Home and Building Automation

Wireless Alarm and Security Systems
Industrial Monitoring and Control
Wireless Healthcare Applications
Wireless Sensor Networks and Active RFID
IEEE 802.15.4g Applications
Wireless M-Bus, All Modes
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CC1200
1.3
www.ti.com
Description
The CC1200 device is a fully integrated single-chip radio transceiver designed for high performance at
very low-power and low-voltage operation in cost-effective wireless systems. All filters are integrated, thus
removing the need for costly external SAW and IF filters. The device is mainly intended for the ISM
(Industrial, Scientific, and Medical) and SRD (Short Range Device) frequency bands at 164190 MHz,
410475 MHz, and 820950 MHz.
The CC1200 device provides extensive hardware support for packet handling, data buffering, burst
transmissions, clear channel assessment, link quality indication, and Wake-On-Radio. The main operating
parameters of the CC1200 device can be controlled through an SPI interface. In a typical system, the
CC1200 device will be used with a microcontroller and only a few external passive components.
The CC1200 and the CC1120 devices are both part of the high-performance transceiver family. The
CC1120 device is more optimized toward narrowband applications, while the CC1200 device is optimized
toward wideband applications but can also effectively cover narrowband down to 12.5-kHz channels.
Device Information (1)
PART NUMBER
PACKAGE
BODY SIZE
VQFN (32)
5.00 mm x 5.00 mm
CC1200RHB
(1)
1.4
For more information, see Section 8, Mechanical Packaging and Orderable Information
Functional Block Diagram

Figure 1-1 shows the system block diagram of the CC120x family of devices.
CC120x
4 kbyte
ROM
MARC
Main Radio Control unit
ADC
256 byte
FIFO RAM
buffer
Battery sensor /
temp sensor
FREQ
SYNTH
0
90
RF and DSP frontend
PA out
PA
Output power ramping and OOK / ASK modulation
+16 dBm high

efficiency PA
Fully integrated fractional-N

frequency synthesizer
XOSC
BIAS
LFC1
LFC0
High linearity
LNA
LNA_N
(optional GPIO for

antenna diversity)
IF amp
SCLK
SO (serial output)
SCLK (serial clock)
SO (GPIO0)
SI
(optional GPIO3/2/0)
CS_N
GPIO1
GPIO2
GPIO3
(optional auto detected
external XOSC / TCXO)
XOSC_Q1
Data interface with

signal chain access
XOSC
XOSC_Q2
90 dB dynamic
range ADC
(optional bit clock)
Channel
filter
IF amp
EXT_XOSC
XOSC_Q1
LNA_P
XOSC_Q2
RBIAS
Packet handler
and FIFO control
Cordic
Configuration and
status registers
Interrupt and
IO handler
DIGITAL INTERFACE TO MCU
LNA_N
TXFIFO
ADC
LNA
RXFIFO
SI (serial input)
DEMODULATOR
System bus
LNA_P
PA
CSn (chip select)
MCU
AES-128
accelerator
eWOR
Enhanced ultra low power
Wake On Radio timer
SPI
Serial configuration
Ultra low power

16 bit
RADIO CONTROL & POWER
MANAGEMENT
and data interface
PACKET HANDLER
Power on reset
Modulator
Ultra low power 40 kHz

auto-calibrated RC oscillator
MODULATOR
(optional 40 kHz
clock input)
Highly flexible FSK / OOK

demodulator
(optional low jitter serial
data output for legacy
protocols)
90 dB dynamic
range ADC
AGC
Automatic Gain Control, 60dB VGA range
RSSI measurements and carrier sense detection
Figure 1-1. Functional Block Diagram
Device Overview
Copyright 20132014, Texas Instruments Incorporated
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Product Folder Links: CC1200
CC1200
www.ti.com
Table of Contents
1
2
3
Device Overview ......................................... 1
4.15
40-MHz Clock Input (TCXO) ........................ 15
1.1
Features .............................................. 1
4.16
32-kHz Clock Input .................................. 16
1.2
Applications ........................................... 1
4.17
40-kHz RC Oscillator ................................ 16
1.3
Description ............................................ 2
4.18
I/O and Reset
1.4
Functional Block Diagram ............................ 2
4.19
Temperature Sensor ................................ 16
4.20
Typical Characteristics .............................. 17
Revision History ......................................... 4

Terminal Configuration and Functions .............. 5
..........................................
.......................................
16
Detailed Description ................................... 20
3.1
Pin Diagram
5.1
Block Diagram....................................... 20
3.2
Pin Configuration ..................................... 6
5.2
Frequency Synthesizer .............................. 20
............................................
Absolute Maximum Ratings ..........................
Handling Ratings .....................................
5.3
Receiver ............................................. 21
Specifications
4.1
4.2
4.3
4.4
5.4
Transmitter .......................................... 21
5.5
Radio Control and User Interface ................... 21
Recommended Operating Conditions (General

Characteristics) ....................................... 7
Thermal Resistance Characteristics for RHB
Package .............................................. 7
5.6
Enhanced Wake-On-Radio (eWOR) ................ 21
5.7
RX Sniff Mode ....................................... 22
5.8
Antenna Diversity
5.9
WaveMatch .......................................... 23
4.5
RF Characteristics .................................... 8
4.6
................................ 8
Current Consumption, Static Modes ................. 9
Current Consumption, Transmit Modes .............. 9
Current Consumption, Receive Modes.............. 10
Receive Parameters................................. 10
Transmit Parameters ................................ 13
PLL Parameters ..................................... 14
Wake-up and Timing ................................ 15
40-MHz Crystal Oscillator ........................... 15
4.7
4.8
4.9
4.10
4.11
4.12
4.13
4.14
Regulatory Standards
6
7
...................................
22
Typical Application Circuit ........................... 24

Device and Documentation Support ............... 25
7.1
Device Support ...................................... 25
7.2
Documentation Support ............................. 26
7.3
Community Resources .............................. 26
7.4
Trademarks.......................................... 26
7.5
Electrostatic Discharge Caution ..................... 26
7.6
Glossary ............................................. 26
Mechanical Packaging and Orderable

Information .............................................. 27
Table of Contents

CC1200
www.ti.com
2 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
This data manual revision history highlights the changes made to the SWRS123C device-specific data
manual to make it an SWRS123D revision.
Changes from Revision C (June 2014) to Revision D
Page
Added Ambient to the temperature range condition and removed Tj from Temperature range ........................... 7
Added data to TCXO table ......................................................................................................... 15
Revision History

CC1200
www.ti.com
3 Terminal Configuration and Functions

3.1
Pin Diagram
26 DCPL_PFD_CHP
28
25 AVDD_PFD_CHP
DCPL_XOSC
AVDD_XOSC
30
29
27 AVDD_SYNTH2
XOSC_Q2
XOSC_Q1
32 EXT_XOSC
31
Figure 3-1 shows pin names and locations for the CC1200 device.
VDD_GUARD
24
RESET_N
23
LPF0
GPIO3
22
AVDD_SYNTH1
GPIO2
21
DCPL_VCO
DVDD
20
LNA_N
CC1200
LPF1
DCPL
19 LNA_P
SI
18
TRX_SW
SCLK
17
PA
GND
GROUND PAD
13
15
16
AVDD_IF
RBIAS
AVDD_RF
N.C.
CSn
DVDD
14
12
SO (GPIO1)
GPIO0
11
10
Figure 3-1. Package 5-mm 5-mm QFN
Terminal Configuration and Functions

CC1200
3.2
www.ti.com
Pin Configuration
The following table lists the pin-out configuration for the CC1200 device.
PIN NO.
PIN NAME
TYPE / DIRECTION
DESCRIPTION
VDD_GUARD
Power
2.03.6 V VDD
RESET_N
Digital input
Asynchronous, active-low digital reset
GPIO3
Digital I/O
General-purpose I/O
GPIO2
Digital I/O
General-purpose I/O
DVDD
Power
2.03.6 VDD to internal digital regulator
DCPL
Power
Digital regulator output to external decoupling capacitor
SI
Digital input
Serial data in
SCLK
Digital input
Serial data clock
SO(GPIO1)
Digital I/O
Serial data out (general-purpose I/O)
10
GPIO0
Digital I/O
General-purpose I/O
11
CSn
Digital input
Active-low chip select
12
DVDD
Power
2.03.6 V VDD
13
AVDD_IF
Power
2.03.6 V VDD
14
RBIAS
Analog
External high-precision resistor
15
AVDD_RF
Power
2.03.6 V VDD
16
N.C.
17
PA
Analog
Single-ended TX output (requires DC path to VDD)
18
TRX_SW
Analog
TX and RX switch. Connected internally to GND in TX and floating (highimpedance) in RX.
19
LNA_P
Analog
Differential RX input (requires DC path to ground)
20
LNA_N
Analog
Differential RX input (requires DC path to ground)
21
DCPL_VCO
Power
Pin for external decoupling of VCO supply regulator
22
AVDD_SYNTH1
Power
2.03.6 V VDD
23
LPF0
Analog
External loop filter components
24
LPF1
Analog
External loop filter components
25
AVDD_PFD_CHP
Power
2.03.6 V VDD
26
DCPL_PFD_CHP
Power
Pin for external decoupling of PFD and CHP regulator
27
AVDD_SYNTH2
Power
2.03.6 V VDD
28
AVDD_XOSC
Power
2.03.6 V VDD
29
DCPL_XOSC
Power
Pin for external decoupling of XOSC supply regulator
30
XOSC_Q1
Analog
Crystal oscillator pin 1 (must be grounded if a TCXO or other external clock

connected to EXT_XOSC is used)
31
XOSC_Q2
Analog
Crystal oscillator pin 2 (must be left floating if a TCXO or other external clock
connected to EXT_XOSC is used)
32
EXT_XOSC
Digital input
Pin for external clock input (must be grounded if a regular crystal connected
to XOSC_Q1 and XOSC_Q2 is used)
GND
Ground pad
The ground pad must be connected to a solid ground plane.
Not connected
Terminal Configuration and Functions

CC1200
www.ti.com
4 Specifications
All measurements performed on CC1200EM_868_930 rev.1.0.0, CC1200EM_420_470 rev.1.0.1, or
CC1200EM_169 rev.1.2.
Absolute Maximum Ratings (1) (2)
4.1
over operating free-air temperature range (unless otherwise noted)

PARAMETER
MIN
Supply voltage (VDD, AVDD_x)
0.3
Input RF level
MAX
UNIT
3.9
+10
dBm
Voltage on any digital pin
0.3
VDD+0.3
Voltage on analog pins

(including DCPL pins)
0.3
2.0
(1)
(2)
All supply pins must have the same voltage

max 3.9 V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to VSS, unless otherwise noted.
4.2
Handling Ratings
Tstg
Storage temperature range
VESD
(1)
(2)
CONDITION
Electrostatic
discharge (ESD)
performance:
Human body model (HBM), per ANSI/ESDA/JEDEC JS001
(1)
Charged device model (CDM), per JESD22-C101 (2) All pins
MIN
MAX
UNIT
40
125
kV
500
500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process.
4.3
Recommended Operating Conditions (General Characteristics)
PARAMETER
MIN
MAX
UNIT
Voltage supply range
2.0
3.6
VDD
40
85
Voltage on digital inputs

Temperature range
4.4
TYP
CONDITION
All supply pins must have the same voltage
Ambient
Thermal Resistance Characteristics for RHB Package

C/W (1)
AIR FLOW (m/s) (2)
21.1
0.00
RJC
Junction-to-case (top)
RJB
Junction-to-board
5.3
0.00
RJA
Junction-to-free air
31.3
0.00
PsiJT
Junction-to-package top
0.2
0.00
PsiJB
Junction-to-board
5.3
0.00
RJC
Junction-to-case (bottom)
0.8
0.00
(1)
(2)
These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RJC] value, which is based on a
JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these
EIA/JEDEC standards:
JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 40 mW and an ambient temperature of 25C is assumed.
m/s = meters per second
Specifications

CC1200
4.5
www.ti.com
RF Characteristics
PARAMETER
Frequency bands
MIN
MAX
UNIT
820
TYP
950
MHz
410
475
MHz
164
190
MHz
(274)
(316.6)
MHz
(205)
(237.5)
MHz
(158.3)
MHz
(137)
Frequency resolution
Data rate
4.6
CONDITION
Contact TI for more information about the use of

these frequency bands.
30
Hz
In 820950 MHz band
15
Hz
In 410475 MHz band
Hz
In 164190 MHz band
1250
kbps
Packet mode
625
kbps
Transparent mode
Regulatory Standards
PERFORMANCE MODE
High-performance mode
FREQUENCY BAND
SUITABLE FOR COMPLIANCE WITH COMMENTS
820950 MHz
ARIB STD-T108
ETSI EN 300 220 receiver,
categories 2 and 3
FCC Part 15.247
FCC Part 15.249
FCC Part 90 Mask G
FCC Part 90 Mask J
Performance also suitable

for systems targeting
maximum allowed output
power in the respective
bands, using a range
extender such as the
CC1190 device
410475 MHz
ARIB STD-T67
ARIB RCR STD-T30
categories 2 and 3
FCC Part 90 Mask D
FCC Part 90 Mask G

extender
ETSI EN 300 220 receiver, category 1

FCC Part 90 Mask D

extender
164190 MHz
820950 MHz

categories 2 and 3
FCC Part 15.247
FCC Part 15.249
410475 MHz

categories 2 and 3
164190 MHz
ETSI EN 300 220
Low-power mode
Specifications

CC1200
www.ti.com
4.7
Current Consumption, Static Modes
TA = 25C, VDD = 3.0 V if nothing else stated

PARAMETER
Power down with retention
MIN
TYP
MAX
UNIT
0.12
CONDITION
0.5
Low-power RC oscillator running
XOFF mode
180
Crystal oscillator / TCXO disabled
IDLE mode
1.5
mA
Clock running, system waiting with no radio activity
4.8
4.8.1
Current Consumption, Transmit Modes

868-, 915-, and 920-MHz Bands (High-Performance Mode)

PARAMETER
MIN
TYP
MAX
UNIT
TX current consumption +14 dBm
46
mA
36
mA
4.8.2
CONDITION
433-MHz Band (High-Performance Mode)

PARAMETER
MIN
TYP
MAX
UNIT
49
mA
46
mA
35
mA
4.8.3
CONDITION
169-MHz Band (High-Performance Mode)

PARAMETER
MIN
TYP
MAX
UNIT
54
mA
50
mA
39
mA
4.8.4
CONDITION
Low-Power Mode
TA = 25C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER
MIN
TYP
33.6
MAX
UNIT
CONDITION
mA
Specifications

CC1200
4.9
www.ti.com
Current Consumption, Receive Modes
4.9.1
High-Performance Mode

PARAMETER
MIN
TYP
MAX
UNIT
RX Wait for sync
CONDITION
Using RX sniff mode, where the receiver wakes
up at regular intervals looking for an incoming
packet.
Sniff mode configured to terminate on Carrier
Sense, and is measured using RSSI_VALID
_COUNT = 1 (0 for 1.2 kbps with 50 kHz Channel
Filter Bandwidth), AGC_WIN_SIZE = 0, and
SETTLE_WAIT = 1. (1)
1.2 kbps, 4-byte preamble (50 kHz

Channel Filter Bandwidth)
0.5
mA
1.2 kbps, 3-byte preamble (11 kHz

Channel Filter Bandwidth)
3.1
mA
38.4 kbps, 12-byte preamble
3.4
mA
50 kbps, 24-byte preamble
2.1
mA
23.5
mA
50 kbps, 5-byte preamble, 40-kHz RC oscillator

used as sleep timer
UNIT
CONDITION
RX Peak Current
1.2kbps
Average current consumption
Check for data packet every 1 second
using Wake on Radio
(1)
Peak current consumption during packet reception
See the sniff mode design note for more information (SWRA428).
4.9.2
Low-Power Mode

PARAMETER
MIN
TYP
MAX
RX Peak Current Low-power RX mode

1.2 kbps
19
mA
Peak current consumption during packet reception

at the sensitivity limit
4.10 Receive Parameters

All RX measurements made at the antenna connector, to a bit error rate (BER) limit of 1%. Selectivity and
blocking is measured with the desired signal 3 dB greater than the sensitivity level.
4.10.1 General Receive Parameters (High-Performance Mode)

PARAMETER
MIN
Saturation
Digital channel filter programmable
bandwidth
IIP3
TYP
MAX
+10
9.5
UNIT
CONDITION
dBm
1600
kHz
14
dBm
14
With carrier sense detection enabled
1600
ppm
With carrier sense detection disabled
113 GHz (VCO leakage at 3.5 GHz)
< 56
dBm
Radiated emissions measured according to ETSI

EN 300 220, fc = 869.5 MHz
30 MHz to 1 GHz
< 57
dBm
Data rate offset tolerance
At maximum gain
Spurious emissions
Optimum source impedance

868-, 915-, and 920-MHz bands
60 + j60 / 30 + j30
433-MHz band
100 + j60 / 50+ j30
169-MHz band
140 + j40 / 70 + j20
10
Specifications
(Differential or single-ended RX configurations)

CC1200
www.ti.com
4.10.2 RX Performance in 868-, 915-, and 920-MHz Bands (High-Performance Mode)

PARAMETER
MIN
Sensitivity
Blocking and Selectivity

1.2-kbps 2-FSK, 12.5-kHz channel
separation, 4-kHz deviation, 11-kHz
channel filter
32.768-kbps 2-GFSK, 200-kHz channel
channel filter
channel filter
50-kbps 2-GFSK, 200-kHz channel
channel filter
(Same modulation format as 802.15.4g
Mandatory Mode)
100-kbps 2-GFSK, 50-kHz deviation,
208-kHz channel filter

500-kbps GMSK, 833-kHz channel filter
1-Mbps 4-GFSK, 400-kHz deviation,
1.6-MHz channel filter
Image rejection
(Image compensation enabled)
(1)
UNIT
CONDITION
122
TYP
MAX
dBm
1.2 kbps 2-FSK, DEV=4 kHz CHF=11 kHz (1)
113
dBm
4.8 kbps OOK
108
dBm
32.768 kbps 2-GFSK, DEV=50 kHz CHF=208

kHz (1)
110
dBm
38.4 kbps 2-GFSK, DEV=20 kHz CHF=104 kHz (1)
109
dBm
50 kbps 2-GFSK, DEV=25 kHz, CHF=104 kHz (1)
-107
dBm
100-kbps 2-GFSK, DEV=50 kHz, CHF=208 kHz (1)
97
dBm
500 kbps 2-GMSK, CHF=833 kHz (1)
97
dBm
1 Mbps 4-GFSK, DEV=400 kHz, CHF=1.66

MHz (1)
54
dB
12.5 kHz (adjacent channel)
55
dB
25 kHz (alternate channel)
77
dB
2 MHz
82
dB
10 MHz
38
dB
200 kHz
46
dB
400 kHz
66
dB
2 MHz
70
dB
10 MHz
44
dB
+ 100 kHz (adjacent channel)
44
dB
64
dB
2 MHz
72
dB
10 MHz
41
dB
200 kHz (adjacent channel)
46
dB
65
dB
2 MHz
71
dB
10 MHz
45
dB
400 kHz (adjacent channel)
54
dB
63
dB
2 MHz
68
dB
10 MHz
42
dB
+ 1 MHz (adjacent channel)
42
dB
2 MHz (alternate channel)
57
dB
10 MHz
46
dB
2 MHz (adjacent channel)
52
dB
4 MHz (alternate channel)
59
dB
10 MHz
56
dB
1.2 kbps, DEV=4 kHz, CHF=10 kHz, image at

125 kHz
DEV is short for deviation, CHF is short for Channel Filter Bandwidth
Specifications

11
CC1200
www.ti.com
4.10.3 RX Performance in 433-MHz Band (High-Performance Mode)

PARAMETER
MIN
TYP
Sensitivity

1.2-kbps 2-FSK, 12.5-kHz channel
channel filter
channel filter
(1)
MAX
UNIT
CONDITION
123
dBm
1.2 kbps 2-FSK, DEV=4 kHz

CHF=11 kHz (1)
111
dBm
38.4 kbps 2-GFSK, DEV=20 kHz CHF=104 kHz (1)
60
dB
61
dB
82
dB
2 MHz
85
dB
10 MHz
49
dB
48
dB
66
dB
2 MHz
74
dB
10 MHz
4.10.4 RX Performance in 169-MHz Band (High-Performance Mode)

PARAMETER
MIN
UNIT
CONDITION
122
dBm
1.2 kbps 2-FSK, DEV=4 kHz CHF=11 kHz (1)
59
dB
64
dB
84
dB
2 MHz
86
dB
10 MHz
Spurious response rejection

1.2 kbps 2-FSK, 12.5-kHz channel
channel filter
68
dB
Spurious at 40 MHz from carrier
Image rejection
(Image compensation enabled)
68
dB
1.2 kbps, DEV=4 kHz, CHF=10 kHz, image at

125 kHz
Sensitivity
1.2 kbps 2-FSK, 12.5-kHz channel
channel filter
(1)
TYP
MAX
4.10.5 RX Performance in Low-Power Mode

PARAMETER
Sensitivity
50 kbps 2-GFSK, 200-kHz channel
channel filter
(Same modulation format as 802.15.4g
Mandatory Mode)
Saturation
(1)
12
MIN
TYP
MAX
UNIT
CONDITION
110
dBm
1.2 kbps 2-FSK, DEV=4 kHz

CHF=11 kHz (1)
96
dBm
50 kbps 2-GFSK, DEV=25 kHz, CHF=119 kHz (1)
41
dB
45
dB
+ 400 kHz (alternate channel)
62
dB
2 MHz
60
dB
10 MHz
+10
dBm
Specifications

CC1200
www.ti.com
4.11 Transmit Parameters

PARAMETER
MIN
Max output power
Min output power
TYP
UNIT
CONDITION
+14
MAX
dBm
At 915- and 920-MHz
+15
dBm
At 915- and 920-MHz with VDD = 3.6 V
+15
dBm
At 868 MHz
+16
dBm
At 868 MHz with VDD = 3.6 V
+15
dBm
At 433 MHz
+16
dBm
+15
dBm
At 169 MHz
+16
dBm
12
dBm
Within fine step size range

Within coarse step size range
38
dBm
Output power step size
0.4
dB
Within fine step size range
Adjacent channel power
60
dBc
4-GFSK 9.6 kbps in 12.5-kHz channel, measured

in 8.75-kHz bandwidth (ETSI 300 220 compliant)
Transmission at +14 dBm
Suitable for systems targeting compliance with
ETSI EN 300 220, ETSI EN 54-25, FCC Part 15,
FCC Part 90, ARIB STD-T108, ARIB STD-T67,
ARIB RCR STD-30
Measured in 1-MHz bandwidth
Spurious emissions
(Excluding harmonics)
30 MHz1 GHz
< 57
dBm
112.75 GHz
< 50
dBm
Second Harm, 169 MHz (ETSI)
43
dBm
Third Harm, 169 MHz (ETSI)
57
dBm
Fourth Harm, 169 MHz (ETSI)
63
dBm
59
dBm
51
dBm
63
dBm
50
dBm
44
dBm
56
dBm
Second Harm, 915 MHz (FCC)
58
dBm
Third Harm, 915 MHz (FCC)
46
dBm
Fourth Harm, 915 MHz (FCC)
62
dBm
Second Harm, 920 MHz (ARIB)
65
dBm
Third Harm, 920 MHz (ARIB)
60
dBm
868-, 915-, and 920-MHz bands
35 + j35
433-MHz band
55 + j25
169-MHz band
80 + j0
Harmonics
Transmission at +14 dBm (or maximum allowed

in applicable band where this is less than +14
dBm) using TI reference design
Suitable for systems targeting compliance with
ETSI EN 300-220, ETSI EN 54-25, FCC Part 15,
FCC Part 90, ARIB STD-T108, ARIB STD-T67,
ARIB RCR STD-30
Optimum load impedance
Specifications

13
CC1200
www.ti.com
4.12 PLL Parameters

4.12.1 High-Performance Mode
PARAMETER
MIN
TYP
Phase noise in 868-, 915-, and 920-MHz

bands
200-kHz loop bandwidth setting

bands

bands

bands
Phase noise in 433-MHz band

Phase noise in 169-MHz band

MAX
UNIT
CONDITION
94
dBc/Hz
10 kHz offset
96
dBc/Hz
100 kHz offset
123
dBc/Hz
1 MHz offset
137
dBc/Hz
10 MHz offset
100
dBc/Hz
10 kHz offset
102
dBc/Hz
100 kHz offset
121
dBc/Hz
1 MHz offset
136
dBc/Hz
10 MHz offset
103
dBc/Hz
10 kHz offset
104
dBc/Hz
100 kHz offset
119
dBc/Hz
1 MHz offset
133
dBc/Hz
10 MHz offset
104
dBc/Hz
10 kHz offset
106
dBc/Hz
100 kHz offset
116
dBc/Hz
1 MHz offset
130
dBc/Hz
10 MHz offset
106
dBc/Hz
10 kHz offset
107
dBc/Hz
100 kHz offset
127
dBc/Hz
1 MHz offset
141
dBc/Hz
10 MHz offset
114
dBc/Hz
10 kHz offset
114
dBc/Hz
100 kHz offset
132
dBc/Hz
1 MHz offset
142
dBc/Hz
10 MHz offset
4.12.2 Low-Power Mode

PARAMETER
bands
14
MIN
TYP
MAX
UNIT
CONDITION
99
dBc/Hz
10 kHz offset
101
dBc/Hz
100 kHz offset
121
dBc/Hz
1 MHz offset
135
dBc/Hz
10 MHz offset
Specifications

CC1200
www.ti.com
4.13 Wake-up and Timing

The turnaround behavior to and from RX and/or TX is highly configurable, and the time it takes will depend on
how the device is set up. See the CC120X user guide (SWRU346) for more information.
PARAMETER
MIN
TYP
Powerdown to IDLE
IDLE to RX/TX
RX/TX turnaround
RX-to-RX turnaround
TX-to-TX turnaround
MAX
UNIT
CONDITION
0.24
ms
Depends on crystal
133
Calibration disabled
369
Calibration enabled
43
369
With PLL calibration
Without PLL calibration
369
With PLL calibration
Without PLL calibration
237
Calibrate when leaving RX/TX enabled
Calibrate when leaving RX/TX disabled
Frequency synthesizer calibration
314
When using SCAL strobe
Minimum required number of preamble

bytes
0.5
bytes
4.2
ms
12.5-kHz channels
0.25
ms
120-kHz channels
RX/TX to IDLE time
Time from start RX until valid RSSI (1)

Including gain settling (function of channel
bandwidth. Programmable for trade-off
between speed and accuracy)
(1)
Required for RF front-end gain settling only.

Digital demodulation does not require preamble
for settling.
See the design note on RSSI and response time. It is written for the CC112X devices, but the same principles apply for the CC1200
device.
4.14 40-MHz Crystal Oscillator

PARAMETER
Crystal frequency
MIN
TYP
MAX
38.4
40
Load capacitance (CL)
10
UNIT
CONDITION
MHz
It is expected that there will be degraded

sensitivity at multiples of XOSC/2 in RX, and an
increase in spurious emissions when the RF
channel is close to multiples of XOSC in TX. We
recommend that the RF channel is kept RX_BW/2
away from XOSC/2 in RX, and that the level of
spurious emissions be evaluated if the RF channel
is closer than 1 MHz to multiples of XOSC in TX.
pF
ESR
Simulated over operating conditions
ms
Depends on crystal
60
Start-up time
0.24
4.15 40-MHz Clock Input (TCXO)

PARAMETER
MIN
Clock frequency
38.4
TYP
MAX
UNIT
40
MHz
TCXO with CMOS output

High input voltage
1.4
VDD
Low input voltage
0.6
ns
Rise / Fall time
Clipped sine output

Clock input amplitude (peak-to-peak)
0.8
1.5
CONDITION
TCXO with CMOS output directly
coupled to pin EXT_OSC
TCXO clipped sine output connected

to pin EXT_OSC through series
capacitor
Specifications

15
CC1200
www.ti.com
4.16 32-kHz Clock Input

PARAMETER
MIN
TYP
Clock frequency
32-kHz clock input pin input high voltage
MAX
UNIT
32
CONDITION
kHz
0.8 x VDD
32-kHz clock input pin input low voltage
0.2 x VDD
4.17 40-kHz RC Oscillator

PARAMETER
MIN
TYP
UNIT
CONDITION
40
kHz
After calibration (frequency calibrated against the

40-MHz crystal or TCXO)
Frequency accuracy after calibration
0.1
Relative to frequency reference (that is, 40-MHz

crystal or TCXO)
Initial calibration time
1.32
ms
Frequency
MAX
4.18 I/O and Reset

PARAMETER
Logic input high voltage
MIN
TYP
UNIT
0.8 x VDD
0.2 x VDD
0.8 x VDD
Logic output low voltage
0.2 x VDD
Power-on reset threshold
CONDITION
Logic input low voltage

Logic output high voltage
MAX
1.3
At 4-mA output load or less

Voltage on DVDD pin
4.19 Temperature Sensor

PARAMETER
MIN
Temperature sensor range
40
TYP
MAX
UNIT
85
CONDITION
Temperature coefficient
2.66
mV / C
Change in sensor output voltage versus change in

temperature
Typical output voltage
794
mV
Typical sensor output voltage at TA = 25C, VDD

= 3.0 V
VDD coefficient
1.17
mV / V
Change in sensor output voltage versus change in

VDD
The CC1200 device can be configured to provide a voltage proportional to temperature on GPIO1. The
temperature can be estimated by measuring this voltage (see Section 4.19, Temperature Sensor). For more
information, see the temperature sensor design note (SWRA415).
16
Specifications

CC1200
www.ti.com
4.20 Typical Characteristics

-120
-121
Sensitivity (dBm)
Sensitivity (dBm)
-120
-122
-123
-124
-125
-121
-122
-123
-124
-40
40
80
2.5
Temperature (C)
1.2 kbps, 4-kHz Deviation, 11-kHz Channel Filter Bandwidth

Figure 4-2. Sensitivity vs Temperature (434 MHz)
80
Selectivity (dB)
RSSI
60
40
20
0
-20
-90
-70
3.5
Supply Voltage (V)
1.2 kbps, 4-kHz Deviation, 11-kHz Channel Filter Bandwidth

Figure 4-1. Sensitivity vs Temperature (434 MHz)
-40
-110
-50
-30
-10
80
70
60
50
40
30
20
10
0
-10
-20
-2
-1
Input Level (dBm)
Offset Frequency (MHz)
70
60
50
40
30
20
10
0
-10
-20
-0.5
24.5
IQ compensation disabled
IQ compensation enabled
-0.3
-0.1
0.1
0.3
0.5
RX Current (mA)
Selectivity (dB)
50 kbps GFSK, 25-kHz Deviation, 104-kHz Channel Filter Bandwidth

50 kbps, 25-kHz Deviation, 104-kHz Channel Filter Bandwidth; Image
Figure 4-3. RSSI vs Input Level
Frequency at 0.28-MHz Offset (Compensation Enabled)
Figure 4-4. Selectivity vs Offset Frequency (100-kHz Channels)
24
23.5
23
22.5
-130
Offset Frequency (MHz)
-110
-90
-70
-50
-30
-10
Input Level (dBm)
1.2 kbps, 4-kHz Deviation, 11-kHz Channel Filter Bandwidth; Image

Frequency at 0.21-MHz Offset
Figure 4-5. Selectivity vs Offset Frequency (12.5-kHz Channels)
1.2 kbps FSK, 4-kHz Deviation, 11-kHz Channel Filter Bandwidth

Figure 4-6. RX Current vs Input Level
Specifications

17
CC1200
www.ti.com
Typical Characteristics (continued)

16
16
Output Power (dBm)
Output Power (dBm)
15
14
13
12
11
15
14
13
12
10
2
2.5
-40
3.5
40
80
Maximum Power Setting (0x7F)

Figure 4-8. Output Power vs Temperature
Maximum Output Power Setting (0x7F)

Figure 4-7. Output Power vs Supply Voltage
20
60
10
TX Current (mA)
Output Power (dBm)
Temperature (C)
Supply Voltage (V)
0
-10
-20
-30
-40
50
40
30
20
10
-50
0
PA power setting
PA power setting
18
Figure 4-9. Output Power at 868 MHz

PA Power Setting
Figure 4-10. TX Current at 868 MHz

vs PA Power Setting
1 Mbps 4-GFSK, 400-kHz Deviation, 500-kHz Loop Bandwidth

Figure 4-11. Eye Diagram
1 Mbps 4-GFSK, 400-kHz Deviation, 300-kHz Loop Bandwidth

Specifications

CC1200
www.ti.com
3.1
1.4
2.9
1.2
2.7
2.5
0.8
Output High Voltage

Output Low Voltage
2.3
0.6
2.1
0.4
1.9
0.2
1.7
GPIO Output Low Voltage (V)
GPIO Output high Voltage (V)
Typical Characteristics (continued)
1.5
0
10
15
20
25
30
Current (mA)
50 kbps GFSK, 25-kHz Deviation, 200-kHz Loop Bandwidth

Figure 4-14. GPIO Output High and Low Voltage

vs Current Being Sourced and Sinked
200-kHz Loop Bandwidth

Figure 4-15. Phase Noise 869.5 MHz (10-kHz to 100-MHz Offset)



Specifications

19
CC1200
www.ti.com
5 Detailed Description
5.1
Block Diagram
Figure 5-1 shows the system block diagram of the CC120x family of devices.
CC120x
4 kbyte
ROM
MARC
Main Radio Control unit
LNA_N
ADC
256 byte
FIFO RAM
buffer
FREQ
SYNTH
0
90
RF and DSP frontend
PA
Output power ramping and OOK / ASK modulation
+16 dBm high

efficiency PA
PA out
Fully integrated fractional-N

frequency synthesizer
XOSC
BIAS
(optional GPIO for

antenna diversity)
IF amp
LFC1
LFC0
SCLK (serial clock)
SO (GPIO0)
SI
(optional GPIO3/2/0)
CS_N
GPIO1
GPIO2
GPIO3
(optional auto detected
external XOSC / TCXO)
XOSC
XOSC_Q2
90 dB dynamic
range ADC
High linearity
LNA
LNA_N
SCLK
SO (serial output)
XOSC_Q1
Data interface with

signal chain access
(optional bit clock)
Channel
filter
IF amp
EXT_XOSC
XOSC_Q1
LNA_P
XOSC_Q2
RBIAS
Packet handler
and FIFO control
Cordic
Configuration and
status registers
Battery sensor /
temp sensor
Interrupt and
IO handler
DIGITAL INTERFACE TO MCU
LNA
TXFIFO
ADC
RXFIFO
SI (serial input)
DEMODULATOR
System bus
LNA_P
PA
CSn (chip select)
MCU
AES-128
accelerator
eWOR
Enhanced ultra low power
Wake On Radio timer
SPI
Serial configuration
Ultra low power

16 bit
RADIO CONTROL & POWER
MANAGEMENT
and data interface
PACKET HANDLER
Power on reset
Modulator
Ultra low power 40 kHz

auto-calibrated RC oscillator
MODULATOR
(optional 40 kHz
clock input)
Highly flexible FSK / OOK

demodulator
(optional low jitter serial
data output for legacy
protocols)
90 dB dynamic
range ADC
AGC
Automatic Gain Control, 60dB VGA range
RSSI measurements and carrier sense detection
Figure 5-1. System Block Diagram
5.2
Frequency Synthesizer
At the center of the CC1200 device there is a fully integrated, fractional-N, ultra-high-performance
frequency synthesizer. The frequency synthesizer is designed for excellent phase noise performance,
providing very high selectivity and blocking performance. The system is designed to comply with the most
stringent regulatory spectral masks at maximum transmit power.
Either a crystal can be connected to XOSC_Q1 and XOSC_Q2, or a TCXO can be connected to the
EXT_XOSC input. The oscillator generates the reference frequency for the synthesizer, as well as clocks
for the analog-to-digital converter (ADC) and the digital part. To reduce system cost, the CC1200 device
has high-accuracy frequency estimation and compensation registers to measure and compensate for
crystal inaccuracies. This compensation enables the use of lower cost crystals. If a TCXO is used, the
CC1200 device automatically turns on and off the TCXO when needed to support low-power modes and
Wake-On-Radio operation.
20
Detailed Description

CC1200
www.ti.com
5.3
Receiver
The CC1200 device features a highly flexible receiver. The received RF signal is amplified by the lownoise amplifier (LNA) and is down-converted in quadrature (I/Q) to the intermediate frequency (IF). At IF,
the I/Q signals are digitized by the high dynamic-range ADCs.
An advanced automatic gain control (AGC) unit adjusts the front-end gain, and enables the CC1200
device to receive strong and weak signals, even in the presence of strong interferers. High-attenuation
channels and data filtering enable reception with strong neighbor channel interferers. The I/Q signal is
converted to a phase and magnitude signal to support the FSK and OOK modulation schemes.
NOTE
A unique I/Q compensation algorithm removes any problem of I/Q mismatch, thus avoiding
time-consuming and costly I/Q image calibration steps.
5.4
Transmitter
The CC1200 transmitter is based on direct synthesis of the RF frequency (in-loop modulation). To use the
spectrum effectively, the CC1200 device has extensive data filtering and shaping in TX mode to support
high throughput data communication in narrowband channels. The modulator also controls power ramping
to remove issues such as spectral splattering when driving external high-power RF amplifiers.
5.5
Radio Control and User Interface

The CC1200 digital control system is built around the main radio control (MARC), which is implemented
using an internal high-performance, 16-bit ultra-low-power processor. MARC handles power modes, radio
sequencing, and protocol timing.
A 4-wire SPI serial interface is used for configuration and data buffer access. The digital baseband
includes support for channel configuration, packet handling, and data buffering. The host MCU can stay in
power-down mode until a valid RF packet is received. This greatly reduces power consumption. When the
host MCU receives a valid RF packet, it burst-reads the data. This reduces the required computing power.
The CC1200 radio control and user interface are based on the widely used CC1101 transceiver. This
relationship enables an easy transition between the two platforms. The command strobes and the main
radio states are the same for the two platforms.
For legacy formats, the CC1200 device also supports two serial modes.
Synchronous serial mode: The CC1200 device performs bit synchronization and provides the MCU
with a bit clock with associated data.
Transparent mode: The CC1200 device outputs the digital baseband signal using a digital interpolation
filter to eliminate jitter introduced by digital filtering and demodulation.
5.6
Enhanced Wake-On-Radio (eWOR)

eWOR, using a flexible integrated sleep timer, enables automatic receiver polling with no intervention from
the MCU. When the CC1200 device enters RX mode, it listens and then returns to sleep if a valid RF
packet is not received. The sleep interval and duty cycle can be configured to make a trade-off between
network latency and power consumption. Incoming messages are time-stamped to simplify timer resynchronization.
The eWOR timer runs off an ultra-low-power RC oscillator. To improve timing accuracy, the RC oscillator
can be automatically calibrated to the RF crystal in configurable intervals.

21
CC1200
5.7
www.ti.com
RX Sniff Mode
The CC1200 device supports quick start up times, and requires few preamble bits. RX Sniff Mode uses
these conditions to dramatically reduce the current consumption while the receiver is waiting for data.
Because the CC1200 device can wake up and settle much faster than the duration of most preambles, it
is not required to be in RX mode continuously while waiting for a packet to arrive. Instead, the enhanced
Wake-On-Radio feature can be used to put the device into sleep mode periodically. By setting an
appropriate sleep time, the CC1200 device can wake up and receive the packet when it arrives with no
performance loss. This sequence removes the need for accurate timing synchronization between
transmitter and receiver, and lets the user trade off current consumption between the transmitter and
receiver.
For more information, see the RX Sniff Mode design note (SWRA428).
5.8
Antenna Diversity
Antenna diversity can increase performance in a multipath environment. An external antenna switch is
required. The CC1200 device uses one of the GPIO pins to automatically control the switch. This device
also supports differential output control signals typically used in RF switches.
If antenna diversity is enabled, the GPIO alternates between high and low states until a valid RF input
signal is detected. An optional acknowledge packet can be transmitted without changing the state of the
GPIO.
An incoming RF signal can be validated by received signal strength or by using the automatic preamble
detector. Using the automatic preamble detector ensures a more robust system and avoids the need to
set a defined signal strength threshold (such a threshold sets the sensitivity limit of the system).
22

CC1200
www.ti.com
5.9
WaveMatch
Advanced capture logic locks onto the synchronization word and does not require preamble settling bytes.
Therefore, receiver settling time is reduced to the settling time of the AGC, typically 4 bits.
The WaveMatch feature also greatly reduces false sync triggering on noise, further reducing the power
consumption and improving sensitivity and reliability. The same logic can also be used as a highperformance preamble detector to reliably detect a valid preamble in the channel.
See SWRC046 for more information.
Figure 5-2. Receiver Configurator in SmartRF Studio

23
CC1200
www.ti.com
6 Typical Application Circuit

NOTE
This section is intended only as an introduction.
Very few external components are required for the operation of the CC1200 device. Figure 6-1 shows a
typical application circuit. The board layout will greatly influence the RF performance of the CC1200
device. Also, Figure 6-1 does not show decoupling capacitors for power pins.
Optional
VDD
25
AVDD_PFD_CHP
VDD
VDD_GUARD
DCPL_PFD_CHP 26
VDD
AVDD_SYNTH2 27
AVDD_XOSC 28
2 RESET_N
VDD
LPF1 24
LPF0 23
3 GPIO3
AVDD_SYNTH1 22
4 GPIO2
DCPL_VCO 21
CC1200
5 DVDD
VDD
LNA_N 20
6 DCPL
LNA_P 19
7 SI
TRX_SW 18
8 SCLK
16 N.C.
VDD
15 AVDD_RF
13 AVDD_IF
VDD
14 RBIAS
12 DVDD
VDD
CSn
11
10 GPIO0
9 SO (GPIO1)
PA 17
VDD
VDD
DCPL_XOSC 29
(optional control pin

from CC1200)
XOSC_Q1 30
EXT_XOSC 32
XOSC/
TCXO
XOSC_Q2 31
40 MHz
crystal
MCU connection
SPI interface and
optional gpio pins
Figure 6-1. Typical Application Circuit

For more information, see the reference designs available for the CC1200 device in Section 7.2,
Documentation Support.
24
Typical Application Circuit

CC1200
www.ti.com
7 Device and Documentation Support

7.1
Device Support
7.1.1
Development Support
7.1.1.1
Configuration Software
The CC1200 device can be configured using the SmartRF Studio software (SWRC046). The SmartRF
Studio software is highly recommended for obtaining optimum register settings, and for evaluating
performance and functionality.
7.1.2
Device and Development-Support Tool Nomenclature

To designate the stages in the product development cycle, TI assigns prefixes to the part numbers of all
microprocessors (MPUs) and support tools. Each device has one of three prefixes: X, P, or null (no prefix)
(for example, CC1200). Texas Instruments recommends two of three possible prefix designators for its
support tools: TMDX and TMDS. These prefixes represent evolutionary stages of product development
from engineering prototypes (TMDX) through fully qualified production devices and tools (TMDS).
Device development evolutionary flow:
X
Experimental device that is not necessarily representative of the final device's electrical
specifications and may not use production assembly flow.
Prototype device that is not necessarily the final silicon die and may not necessarily meet
final electrical specifications.
null
Production version of the silicon die that is fully qualified.
Support tool development evolutionary flow:

TMDX
Development-support product that has not yet completed Texas Instruments internal
qualification testing.
TMDS
Fully qualified development-support product.
X and P devices and TMDX development-support tools are shipped against the following disclaimer:
"Developmental product is intended for internal evaluation purposes."
Production devices and TMDS development-support tools have been characterized fully, and the quality
and reliability of the device have been demonstrated fully. TI's standard warranty applies.
Predictions show that prototype devices (X or P) have a greater failure rate than the standard production
devices. Texas Instruments recommends that these devices not be used in any production system
because their expected end-use failure rate still is undefined. Only qualified production devices are to be
used.
TI device nomenclature also includes a suffix with the device family name. This suffix indicates the
package type (for example, RHB) and the temperature range (for example, blank is the default commercial
temperature range) provides a legend for reading the complete device name for any CC1200 device.
For orderable part numbers of CC1200 devices in the QFN package types, see the Package Option
Addendum of this document, the TI website (www.ti.com), or contact your TI sales representative.
Device and Documentation Support

25
CC1200
7.2
www.ti.com
Documentation Support
The following documents supplement the CC1200 processor. Copies of these documents are available on
the Internet at www.ti.com. Tip: Enter the literature number in the search box provided at www.ti.com.
7.3
SWRR106
CC112x IPC 868- and 915-MHz 2-layer Reference Design
SWRR107
CC112x IPC 868- and 915-MHz 4-layer Reference Design
SWRR122
CC1200EM 420- to 470-MHz Reference Design
SWRR121
CC1200EM 868- to 930-MHz Reference Design
SWRC046
SmartRF Studio Software
SWRA428
CC112x/CC120x Sniff Mode Application Note
Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the
respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views;
see TI's Terms of Use.
TI E2E Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster
collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge,
explore ideas and help solve problems with fellow engineers.
TI Embedded Processors Wiki Texas Instruments Embedded Processors Wiki. Established to help
developers get started with Embedded Processors from Texas Instruments and to foster
innovation and growth of general knowledge about the hardware and software surrounding
these devices.
7.4
Trademarks
SmartRF, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
7.5
Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
7.6
Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
26
Device and Documentation Support

CC1200
www.ti.com
8 Mechanical Packaging and Orderable Information

The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and
revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Mechanical Packaging and Orderable Information

27
PACKAGE OPTION ADDENDUM
www.ti.com
26-Oct-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package

Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
CC1200RHBR
ACTIVE
VQFN
RHB
32
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU | Call TI
Level-3-260C-168 HR
-40 to 85
CC1200
CC1200RHBT
ACTIVE
VQFN
RHB
32
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
CC1200
(1)
The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Oct-2015
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION

www.ti.com
29-Sep-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins

Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
CC1200RHBR
VQFN
RHB
32
3000
330.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
CC1200RHBT
VQFN
RHB
32
250
180.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION

www.ti.com
29-Sep-2014
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CC1200RHBR
VQFN
RHB
32
3000
338.1
338.1
20.6
CC1200RHBT
VQFN
RHB
32
250
210.0
185.0
35.0
Pack Materials-Page 2
IMPORTANT NOTICE
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changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TIs terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
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TI assumes no liability for applications assistance or the design of Buyers products. Buyers are responsible for their products and
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CC1200 Low-Power, High-Performance RF Transceiver

RF Performance and Analog Features:

Low-Power, High-Performance, Wireless Systems

Home and Building Automation

Functional Block Diagram

RF and DSP frontend

Output power ramping and OOK / ASK modulation

+16 dBm high

Fully integrated fractional-N

(optional GPIO for

SCLK (serial clock)

Data interface with

(optional bit clock)

DIGITAL INTERFACE TO MCU

CSn (chip select)

Ultra low power

Ultra low power 40 kHz

Highly flexible FSK / OOK

Figure 1-1. Functional Block Diagram

Copyright 20132014, Texas Instruments Incorporated

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SWRS123D JULY 2013 REVISED OCTOBER 2014

Device Overview ......................................... 1

40-MHz Clock Input (TCXO) ........................ 15

32-kHz Clock Input .................................. 16

40-kHz RC Oscillator ................................ 16

I/O and Reset

Functional Block Diagram ............................ 2

Temperature Sensor ................................ 16

Typical Characteristics .............................. 17

Revision History ......................................... 4

Detailed Description ................................... 20

Pin Configuration ..................................... 6

Frequency Synthesizer .............................. 20

Radio Control and User Interface ................... 21

Recommended Operating Conditions (General

Enhanced Wake-On-Radio (eWOR) ................ 21

RX Sniff Mode ....................................... 22

Typical Application Circuit ........................... 24

Device Support ...................................... 25

Documentation Support ............................. 26

Community Resources .............................. 26

Electrostatic Discharge Caution ..................... 26

Mechanical Packaging and Orderable

Copyright 20132014, Texas Instruments Incorporated

Submit Documentation Feedback

Copyright 20132014, Texas Instruments Incorporated

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SWRS123D JULY 2013 REVISED OCTOBER 2014

3 Terminal Configuration and Functions

Figure 3-1. Package 5-mm 5-mm QFN

Terminal Configuration and Functions

Copyright 20132014, Texas Instruments Incorporated

Submit Documentation Feedback

Asynchronous, active-low digital reset

2.03.6 VDD to internal digital regulator

Digital regulator output to external decoupling capacitor

Serial data clock