Data Sheet IXYS IXGH60N60C2

Advance Technical Data
HiPerFASTTM IGBT
C2-Class High Speed IGBTs
Symbol
Test Conditions
VCES
IC25
VCE(sat)
tfi typ
IXGH 60N60C2
IXGT 60N60C2
Maximum Ratings
VCES
TJ = 25C to 150C
600
VCGR
TJ = 25C to 150C; RGE = 1 M
600
VGES
Continuous
20
VGEM
Transient
30
IC25
TC = 25C (limited by leads)
75
IC110
TC = 110C
60
ICM
TC = 25C, 1 ms
300
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125C, RG = 10

Clamped inductive load @ 600V
PC
TC = 25C
ICM = 100
480
-55 ... +150
TJM
150
Tstg
-55 ... +150
300
TJ
Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
(IXGH)
C (TAB)
G
Mounting torque (TO-247)
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
TO-268
(IXGT)
G
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z
z
Md
= 600 V
= 75 A
= 2.5 V
= 35 ns
z
z
Very high frequency IGBT

Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.
= 250 A, VCE = VGE
VGE(th)
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = 20 V
VCE(sat)
IC
= 50 A, VGE = 15 V
2003 IXYS All rights reserved
3.0
TJ = 25C
TJ = 150C
TJ = 25C
TJ = 125C
2.1
1.8
5.0
50
1
A
mA
100
nA
2.5
V
V
z
z
z
z
z
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
z
z
High power density

Very fast switching speeds for high
frequency applications
DS99043A(09/03)
IXGH 60N60C2
IXGT 60N60C2
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.
IC = 50 A; VCE = 10 V,
Pulse test, t 300 s, duty cycle 2 %
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
40
58
3900
pF
280
pF
97
pF
146
nC
28
nC
50
nC
Cres
Qg
Qge
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
18
ns
Inductive load, TJ = 25C
25
ns
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2
95
Eoff
Eon
td(off)
tfi
Inductive load, TJ = 125C

IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2
Eoff
ns
ns
0.48
0.8 mJ
18
ns
25
ns
0.45
mJ
130
ns
80
ns
1.2
mJ
RthJC
RthCK
150
35
td(on)
tri
TO-247 AD Outline
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
0.26 K/W
(TO-247)
0.25
K/W
Min. Recommended Footprint

(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXGH 60N60C2
IXGT 60N60C2
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25 Deg. C
@ 25 deg. C
100
200
VG E = 15V
13V
11V
90
VG E = 15V
13V
11V
175
70
7V
60
50
40
30
125
100
7V
75
50
20
5V
10
25
5V
0
0.5
1.5
2.5
3.5
1.5
V CE - Volts
Fig. 3. Output Characteristics
2.5
V CE - Volts
100
4.5
1.2
VG E = 15V
13V
11V
80
9V
1.1
70
VC E (sat) - Normalized
90
7V
60
50
40
30
5V
VG E = 15V
I C = 100A
1
0.9
I C = 50A
0.8
0.7
I C = 25A
20
0.6
10
0
0.5
0.5
1.5
2.5
3.5
25
50
75
100
125
150
TJ - Degrees Centigrade
V CE - Volts
Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
200
T J = 25 C
4.5
175
150
I C - Amperes
VCE - Volts
3.5
Fig. 4. Temperature Dependence of V CE(sat)
@ 125 Deg. C
I C - Amperes
9V
150
I C - Amperes
I C - Amperes
80
9V
3.5
3
2.5
I C = 100A
100
75
T J = 125 C
50
50A
1.5
125
25 C
-40 C
25
25A
0
5
10
11
V GE - Volts
12
13
14
15
3.5
4.5
5.5
6.5
V GE - Volts
7.5
8.5
IXGH 60N60C2
IXGT 60N60C2
Fig. 7. Transconductance
Fig. 8. Dependence of Eoff on RG
100
6
TJ = 125 C
VGE = 15V
VCE = 400V
90
T J = -40 C
25 C
70
E off - milliJoules
g f s - Siemens
80
125 C
60
50
40
30
20
I C = 100A
4
I C = 75A
3
I C = 50A
I C = 25A
10
0
0
25
50
75
100
125
150
175
200
E off - milliJoules
E off - MilliJoules
14
R G = 2 Ohms
R G= 10 Ohms - - - - -
T J = 125 C
2
T J = 25 C
I C = 50A
0
60
70
80
90
I C = 75A
50
I C = 100A
40
16
VG E = 15V
VC E = 400V
100
I C = 25A
25
50
I C - Amperes
75
100
125
TJ - Degrees Centigrade
Fig. 11. Gate Charge
Fig. 12. Capacitance
15
10000
VC E = 300V
I C = 50A
I G = 10mA
Capacitance - pF
VG E - Volts
12
12
10
Fig. 10. Dependence of Eoff on Temperature
VG E = 15V
VC E = 400V
30
Fig. 9. Dependence of Eoff on IC

R G = 2 Ohms
R G = 10 Ohms - - - - -
20
R G - Ohms
I C - Amperes
f = 1M Hz
C ies
1000
C oes
100
C res
10
0
20
40
60
80
100
120
140
160
10
15
20
25
30
35
40
V CE - Volts
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXGH 60N60C2
IXGT 60N60C2
F ig . 13. M aximu m Tran sien t Th ermal R esistan ce

0 .3
R (th) J C - (C/W)
0 .25
0 .2
0 .15
0.1
0 .05
1
10
10 0
Puls e W idth - millis ec onds
10 0 0

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Data Sheet IXYS IXGH60N60C2

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Available Formats

Advance Technical Data

C2-Class High Speed IGBTs

TJ = 25C to 150C; RGE = 1 M

TC = 25C (limited by leads)

VGE = 15 V, TVJ = 125C, RG = 10

-55 ... +150

-55 ... +150

Maximum lead temperature for soldering

Mounting torque (TO-247)

Very high frequency IGBT

= 250 A, VCE = VGE

2003 IXYS All rights reserved

High power density

VCE = 25 V, VGE = 0 V, f = 1 MHz

IC = 50 A, VGE = 15 V, VCE = 0.5 VCES

Inductive load, TJ = 25C

Inductive load, TJ = 125C

Min. Recommended Footprint

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

Fig. 2. Extended Output Characteristics

Fig. 3. Output Characteristics

Fig. 5. Collector-to-Emitter Voltage

Fig. 6. Input Admittance

Fig. 4. Temperature Dependence of V CE(sat)

Fig. 8. Dependence of Eoff on RG

Fig. 11. Gate Charge

Fig. 12. Capacitance

Fig. 10. Dependence of Eoff on Temperature

Fig. 9. Dependence of Eoff on IC

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

F ig . 13. M aximu m Tran sien t Th ermal R esistan ce

Puls e W idth - millis ec onds

2003 IXYS All rights reserved

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