PD - 97562

PDP TRENCH IGBT

Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package

IRG7IC28UPbF
Key Parameters
600 1.70 225 150 V V A C

VCE min VCE(ON) typ. @ IC = 40A IRP max @ TC= 25C TJ max

G E

E C G

n-channel
G Gate C Collector

TO-220AB Full-Pak
E Emitter

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

Absolute Maximum Ratings

Parameter
VGE IC @ TC = 25C IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw

Max.
30 25 12 225 40 16 0.32 -40 to + 150 300

Units
V A

W W/C C

10lb in (1.1N m)

Thermal Resistance
RJC RJA Junction-to-Case Junction-to-Ambient

Parameter

Typ.

Max.
3.1 65

Units
C/W

www.irf.com

1
09/02/2010

IRG7IC28UPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVCES V(BR)ECS VCES/TJ Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Breakdown Voltage Temp. Coefficient

Min. Typ. Max. Units

Conditions
VGE = 0V, ICE = 1.0mA

600 15

0.57 1.25 1.42 1.70 1.96 2.97 1.75 -11 0.5 30 90 305 55 70 25 30 35 260 145 25 40 280 320 770 930

1.95

VGE = 0V, ICE = 1.0A V/C Reference to 25C, ICE = 1.0mA VGE = 15V, ICE = 12A VGE = 15V, ICE = 24A V VGE = 15V, ICE VGE = 15V, ICE VGE = 15V, ICE

V V

VCE(on)

Static Collector-to-Emitter Voltage

VGE(th) VGE(th)/TJ ICES

Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current

2.2 100

VGE = 15V, ICE = 40A, TJ = 150C 4.7 V VCE = VGE, ICE = 250A mV/C VCE = 600V, VGE = 0V 20 100 -100 ns J ns ns A

e e = 40A e = 70A e = 160A e

VCE = 600V, VGE = 0V, TJ = 100C VCE = 600V, VGE = 0V, TJ = 125C VCE = 600V, VGE = 0V, TJ = 150C

IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE

Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse

nA S nC

VGE = 30V VGE = -30V VCE = 25V, ICE = 40A VCE = 400V, IC = 40A, VGE = 15V IC = 40A, VCC = 400V RG = 22 , L=100H TJ = 25C IC = 40A, VCC = 400V RG = 22 , L=100H TJ = 150C VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 100C

Human Body Model ESD Machine Model Cies Coes Cres LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance

Class H1C (2000V) (Per JEDEC standard JESD22-A114) Class M4 (425V) (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 1880 75 pF VCE = 30V 45 4.5 7.5 nH = 1.0MHz Between lead, 6mm (0.25in.) from package and center of die contact

Notes: Half sine wave with duty cycle <= 0.02, ton=1.0sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%.

www.irf.com

IRG7IC28UPbF
200 175 150 125 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 200 175 150 125 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V

ICE (A)

100 75 50 25 0 0 2 4 6

ICE (A)
10

100 75 50 25 0

10

VCE (V)

VCE (V)

Fig 1. Typical Output Characteristics @ 25C

200 175 150 125 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V

Fig 2. Typical Output Characteristics @ 75C

200 175 150 125 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V

ICE (A)

100 75 50 25 0 0 2 4 6 8

ICE (A)
14

100 75 50 25 0

10

12

10

12

14

VCE (V)

VCE (V)

Fig 3. Typical Output Characteristics @ 125C

200 175 150 125 100 75 50 25 0 2 4 6 8 10 VGE, Gate-to-Emitter Voltage (V) T J = 25C T J = 150C

Fig 4. Typical Output Characteristics @ 150C

2.0

VCE, Voltage Collector-to-Emitter (V)

ICE, Collector-to-Emitter Current (A)

IC = 20A 1.8

1.6

T J = 25C

T J = 150C 1.4

1.2 0 5 10 15 20 VGE, Voltage Gate-to-Emitter (V)

Fig 5. Typical Transfer Characteristics

Fig 6. VCE(ON) vs. Gate Voltage

www.irf.com

IRG7IC28UPbF
25
250

Repetitive Peak Current (A)

20

200

15

150

IC (A)

10

100 ton= 2s Duty cycle <= 0.05 Half Sine Wave

50

0 25 50 75 100 125 150

0 25 50 75 100 125 150 Case Temperature (C)

Fig 7. Maximum Collector Current vs. Case Temperature

950 900 850 V CC = 240V L = 220nH C = variable 100C

T C (C)

Fig 8. Typical Repetitive Peak Current vs. Case Temperature

950 900 850 L = 220nH C = 0.4F 100C

Energy per Pulse (J)

Energy per Pulse (J)

800 750 700 650 600 550 500 450 160 170 180 190 200 210 220 230 240 IC, Peak Collector Current (A) 25C

800 750 700 650 600 550 500 450

25C

200 205 210 215 220 225 230 235 240 VCE, Collector-to-Emitter Voltage (V)

Fig 9. Typical EPULSE vs. Collector Current

1100 V CC = 240V 1000
Energy per Pulse (J)

Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage

1000 Tc = 25C Tj = 150C Single Pulse 100
IC (A)

L = 220nH t = 1s half sine

C= 0.4F

900 800 700 600 500 400 20 40 60 80 100 120 140 160 TJ, Temperature (C) C= 0.3F

10sec 100sec 1msec

10
C= 0.2F

1 1.0 10 VCE (V) 100 1000

Fig 11. EPULSE vs. Temperature

Fig 12. Forrward Bias Safe Operating Area

www.irf.com

IRG7IC28UPbF
100000
C oes = C ce + C gc

10000
Capacitance (pF)

VGE, Gate-to-Emitter Voltage (V)

VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc

16 14 12 10 8 6 4 2 0 IC = 40A

VCES = 120V VCES = 300V VCES = 400V

Cies 1000

100 Coes Cres 10 0 100 200 300 400 500 VCE, Collector-toEmitter-Voltage(V)

10

20

30

40

50

60

70

80

Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage

6000 5000 4000

Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage

Q G, Total Gate Charge (nC)

EOFF

Energy (J)

3000 2000 EON 1000 0 0 10 20 30 40 50 60 70 80 90

IC (A)

Fig. 15 - Typ. Energy Loss vs. IC TJ = 150C; L = 250H; VCE = 400V, RG = 22; VGE = 15V
10

Thermal Response ( Z thJC )

D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01

J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4

Ri (C/W)
0.19973 0.38341 1.17794 1.36892

0.000268 0.002261 0.154543 2.511

i (sec)

0.01 SINGLE PULSE ( THERMAL RESPONSE )

Ci= i/Ri Ci i/Ri

Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 10 100

0.001 1E-006

1E-005

0.0001

0.001

Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case

t1 , Rectangular Pulse Duration (sec)

www.irf.com

IRG7IC28UPbF

RG DRIVER L

PULSE A

VCC
B

PULSE B

Ipulse RG DUT

tST

Fig 16a. tst and EPULSE Test Circuit

Fig 16b. tst Test Waveforms

VCE

Energy IC Current
0

L DUT 1K VCC

Fig 16c. EPULSE Test Waveforms

Fig. 17 - Gate Charge Circuit (turn-off)

www.irf.com

IRG7IC28UPbF
TO-220AB Full-Pak Package Outline
Dimensions are shown in millimeters (inches)

TO-220AB Full-Pak Part Marking Information

@Y6HQG@) UCDTDT6IDSAD'#B XDUC6TT@H7G` GPU8P9@"#"! 6TT@H7G@9PIXX!#! DIUC@6TT@H7G`GDI@F DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPU8P9@ Q6SUIVH7@S
DSAD'#B !#F "#"!

Ir)Qvhriyyvrvv vqvphrGrhqArr

96U@8P9@ `@6S 2! X@@F!# GDI@F

TO-220AB Full-Pak package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without Data and specifications subject to change without notice. limitation, we have not qualified our product for medical use or This product has been designed for the Industrial market. applications involving hi-reliability applications. Customers Qualification Standards can be found on IRs Web site. are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2010

www.irf.com