Sheet 2
Sheet 2
Sheet 2
Faculty of Engineering
Electrical Engineering Department
EE431: Digital Integrated Circuits
Sheet 2: MOS Dynamic Characteristics
c. How do the switching threshold Vth and the delay times change if the power supply
voltage is dropped from 5 V to 3.3 V. Provide an interpretation of the results.
6) Consider a CMOS inverter with the same process parameters as in Problem 3. The
switching threshold is designed to be equal to 2.4 V. A simplified expression of the
total output load capacitance is given as:
Cout = 500 fF + Cdb,n + Cdb,p
Furthermore, we know that the drain-to-substrate parasitic capacitances of the NMOS and
the PMOS transistors are functions of the channel width. A set of simplified capacitance
expressions are given below.
Cdb,n = 100 fF + 9 Wn
Cdb,P = 80 fF + 7 Wp
Where Wn and Wp are expressed in m.
a. Determine the channel width of both transistors such that the propagation delay
pHL is smaller than 0.825 ns.
b. Assume now that the CMOS inverter has been designed with (W/L)n = 6 and
(W/L)p = 15, and that the total output load capacitance is 250 fF. Calculate the
output rise time and fall time using the average current method.
7) Consider a CMOS inverter with the following parameters:
nMOS VT0,n = 1.0 V n Cox = 45 A/V2 (W/L)n = 10
pMOS VT0,p = -1.2 V p Cox = 25 A/V2 (W/L)p = 20
The power supply voltage is 5 V, and the output load capacitance is 1.5 pF.
a. Calculate the rise time and the fall time of the output signal using
i.
exact method (differential equations)
ii.
average current method
b. Determine the maximum frequency of a periodic square-wave input signal so that
the output voltage can still exhibit a full logic swing from 0 V to 5 V in each cycle.
c. Calculate the dynamic power dissipation at this frequency.
d. Assume that the output load capacitance is mainly dominated by fixed fanout
components (which are independent of Wn and Wp). We want to re-design the
inverter so that the propagation delay times are reduced by 25%.
Determine the required channel dimensions of the NMOS and the PMOS
transistors. How does this re-design influence the switching (inversion) threshold?