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Unit - 6 AMPLIFIERS: Small Signal Low

The document discusses transistor amplifiers. It defines the key parameters of transistors like the BJT and MOSFET when used as amplifiers, including voltage gain, current gain, input and output impedances. It provides examples of simple single-stage transistor amplifier circuits and analyzes them in terms of these parameters. The small-signal models of the BJT and MOSFET are also introduced.

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36 views

Unit - 6 AMPLIFIERS: Small Signal Low

The document discusses transistor amplifiers. It defines the key parameters of transistors like the BJT and MOSFET when used as amplifiers, including voltage gain, current gain, input and output impedances. It provides examples of simple single-stage transistor amplifier circuits and analyzes them in terms of these parameters. The small-signal models of the BJT and MOSFET are also introduced.

Uploaded by

AzImm
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Unit -6

AMPLIFIERS: Small signal low


frequency transistor amplifier circuits: hm
parameter representation of a transistor,
o
c
.
s
Analysis of single stage rtransistor
e
e
amplifier using h-parameters:
voltage
n
i
g
gain, current gain,nInput impedance and
E
O
output impedance.
Comparison of
o
Dconfigurations in terms of Ai ,
transistor
a
a
F
Ri, Av, Ro.

Introduction to Amplifiers

m
o

The BJT is an an excellent amplifier when biased in the forward-active


region.
The FET can be used as an amplifier if operated in the saturation
region.
In these regions, the transistors can provide high voltage, current and
power gains.
DC bias is provided to stabilize the operating point in the desired
operation region.
The DC Q-point also determines
The small-signal parameters of the transistor
The voltage gain, input resistance, and output resistance
The maximum input and output signal amplitudes
The overall power consumption of the amplifier

c
.
rs

e
e
in

g
n

E
O

a
a
F

o
D

A Simple BJT Amplifier

m
o

c
.
rs

e
e
in

g
n

E
O
The BJT is biased in the forward
active region by dc voltage sources V
o
and V = 10 V. The
DC Q-point is set at, (V , I ) = (5 V, 1.5 mA) with I
D
= 15 mA. aa
F
Total base-emitter voltage is: vBE VBE v
be
BE

CC

Collector-emitter voltage is:

CE

v 10 i R
CE
C C

This produces a load line.

BJT Amplifier (continued)

m
o

If changes in operating currents and


voltages are small enough, then IC
and VCE waveforms are undistorted
replicas of the input signal.

c
.
rs

e
e
inA small voltage change at the base

g
n

causes a large voltage change at the


collector. The voltage gain is given
by:
vce 1.65180

206180206
An 8 mV peak change in vBE gives a 5 Av
v
0.0080
mA change in iB and a 0.5 mA change in
be
iC.
The minus sign indicates a 1800

The 0.5 mA change in iC gives a 1.65 V phase shift between input and
change in vCE .
output signals.

E
O

a
a
F

o
D

A Simple MOSFET Amplifier

m
o

c
.
rs

e
e
in

g
n

E
The MOSFET is biased in theO
saturation region by dc voltage sources V and
o
V = 10 V. The DC Q-point
is set at (V , I ) = (4.8 V, 1.56 mA) with V =
D
3.5 V.
a
a
F voltage is: vGS VGS vgs
Total gate-source
GS

DS

DS

DS

GS

A 1 V p-p change in vGS gives a 1.25 mA p-p change in iDS and a 4 V p-p change
in vDS. Notice the characteristic non-linear I/O relationship compared to the BJT.

A Practical BJT Amplifier using


Coupling and Bypass Capacitors

m
o

In a practical amplifier design, C1 and


C3 are large coupling capacitors or dc
blocking capacitors, their reactance (XC
= |ZC| = 1/wC) at signal frequency is
negligible. They are effective open
circuits for the circuit when DC bias is
considered.

c
.
rs

e
e
in

g
n

E
O

AC coupling through capacitors is


used to inject an ac input signal and
extract the ac output signal without
disturbing the DC Q-point
Capacitors provide negligible
impedance at frequencies of interest
and provide open circuits at dc.

a
a
F

o
D

C2 is a bypass capacitor. It provides a


low impedance path for ac current from
emitter to ground. It effectively
removes RE (required for good Q-point
stability) from the circuit when ac
signals are considered.

DC and AC Analysis -- Application of


Superposition
DC analysis:
Find the DC equivalent circuit by replacing all capacitors by open
circuits and inductors (if any) by short circuits.
Find the DC Q-point from the equivalent circuit by using the
appropriate large-signal transistor model.
AC analysis:
Find the AC equivalent circuit by replacing all capacitors by short
circuits, inductors (if any) by open circuits, dc voltage sources by
ground connections and dc current sources by open circuits.
Replace the transistor by its small-signal model (to be developed).
Use this equivalent circuit to analyze the AC characteristics of the
amplifier.
Combine the results of dc and ac analysis (superposition) to yield the
total voltages and currents in the circuit.

m
o

c
.
rs

e
e
in

g
n

E
O

a
a
F

o
D

DC Equivalent for the BJT Amplifier

m
o

c
.
rs

e
e
in

g
n

E
O

o
D

DC Equivalent Circuit

a
a
F in the original amplifier circuit are replaced by open
All capacitors
circuits, disconnecting vI, RI, and R3 from the circuit and leaving RE
intact. The the transistor Q will be replaced by its DC model.

AC Equivalent for the BJT Amplifier

m
o

c
.
rs

e
e
in

g
n

E
O

o
The coupling and D
bypass capacitors are replaced by short circuits. The DC
a
voltage supplies
are replaced with short circuits, which in this case connect
a
F
to ground.

AC Equivalent for the BJT Amplifier


(continued)

m
o

c
.
R R r
Rs10k 30k
B e
1 2
e
R
in R R 4.3k100k

g
n

E
O

o
D

C 3

By combining parallel resistors


into equivalent RB and R, the equivalent AC
circuit above is constructed. Here, the transistor will be replaced by its
equivalent small-signal AC model (to be developed).

a
a
F

Hybrid-Pi Small-signal AC Model for


the BJT

m
o

Transconductance:
I
gm C 40I
C
V
T
Input resistance:

oV
o
T
r

I
gm
C

c
.
rs

e
e
in

g
n

E
O

The hybrid-pi small-signal


model is the intrinsic lowfrequency representation of the
BJT.
The small-signal parameters are
controlled by the Q-point and
are independent of the geometry
of the BJT.

a
a
F

o
D

Output resistance:

V V
ro A CE
I
C

Small-signal Current Gain and


Amplification Factor of the BJT

m
o

The amplification factor is given by:

c
.
rs

v ce
mF
,v ce ro gm v be
v be

e
e
in I

g
n

o gmr

E
O

F
1 I
C i

C Q po int
F

o
D

a
a
> for
Fi < I , and <
o

V V
V V
m gmro C A CE A CE
F
V
I
V
T
C
T

for iC > IM, however, o and F


are usually assumed to be about
equal.

For VCE << VA, m A 40V


A
F V
T

mF represents
the maximum voltage

gain an individual BJT can provide,


independent of the operating point.

Example o Calculation for 2N2222A

m
o

c
.
rs

e
e
in

g
n

E
O

o
D

a
a
F

Choose the Q-point at about (5 V, 5 mA) for this analysis. Notice the slope of the
DC current gain characteristic in this region. Ideally, the slope would be zero.

From Figure 3 for the 2N2222A BJT at the chosen Q-point

F
1 I

C i

F
C Q po int

o gmr

F 200100 5.6x103
2 103
I
10
C

F
1 I

C I

F
C Q po int

m
o

c
.
rs

e
e
in

at about IC = 5 mA and 25 C

g
n 212 for = 180
180
180
o
E
5.6x10 3 O10.15
3
15x10
o
180
D
a
a
Ftolerances usually encountered in forward current gain, the
Given the

assumption of F = o seems reasonable for preliminary analysis and


initial designs.

Equivalent Forms of the Small-signal


Model for the BJT

m
o

c
.
rs

e
e
in

g
n

The voltage-controlled current source gmvbe can be transformed into a


current-controlled current source,
v i r i o
be b
bg
m
gmv gmi r oi
be
b
b
vce
ic gmv
gmv oi
be r
be
b
o
The basic relationship ic=ib is useful in both dc and ac analysis when
the BJT is biasedin the forward-active region.

E
O

a
a
F

o
D

Small Signal Operation of BJT

be
BE
i I ic I exp
exp

C C
S
V
V

T
T

2
3
v

1
1

I 1 be be be ...
C V
2V 6V

T
T
T

2
3
v

1
1
be

be
be
ic i I I


...
C C C V
2V 6V

T
T
T

v
i I exp BE
C S
V
T

c
.
rs

e
e
in

g
n

E
O

For linearity, ic should be directly proportional to vbe.


v

be IC
ic I v gmv
v 2V 50 mV
C V V be
be for
T
be
T
T
If we limit vbe to 5 mV, the relative change in ic compared to IC that

ic gm vbe vbe 0.005


corresponds to small-signal operation is:

0.200
I
I
V
0.025
C
C
T

o
D

a
a
F

m
o

Small-Signal Analysis of the Complete


C-E Amplifier: AC Equivalent

m
o
The AC equivalent
circuit
is
c
.
constructed by
assuming that all
s
r
capacitances
have zero
e
e
impedance
at signal frequency
n
giand the AC voltage source is at

n
E

O
o

D
a
a

ground.
Assume that the DC Q-point has
already been calculated.

Small-Signal Analysis of Complete C-E


Amplifier: Small-Signal Equivalent
vo gmv R
be L
and

m
o

c
.
vrs
R r
v e
ei B
be R R r
n
gi I B

n
E

O
o

D
a
a

R ro R R
L
C 3

Overall voltage gain from source vi


to output voltage vo across R3 is:
v

vo
vo be
Av v v v

i
be i
Av gm R
L

B
R R r
I
B

m
o

c
.
rs

e
e
in

g
n

E
O

a
a
F

o
D

Capacitor Selection for the CE Amplifier


1
1
Zc
Capacitive Reactance Xc Z c
where w 2f
jwC
wC

m
o

c
.
The key objective in design is to make the capacitive
reactance
s
r
much smaller at the operating frequency e
f than the associated
e
resistance that must be coupled or ibypassed.
n
g
X R r Make XEn
0.01 R r for < 1% gain error.
c1
B
c1
B
O
o
X 0 Make
X
1 for <1% gain error.
D
c2
c2
a
a
X RF Make X 0.01 R for <1% gain error.
c3
3
c3
3

m
o

c
.
rs

e
e
in

g
n

E
O

a
a
F

o
D

C-E Amplifier Input Resistance

m
o

c
.
rs

e
e
The
input resistance, the total
n
i
resistance looking into the amplifier
g
n at coupling capacitor C , represents

E
O

a
a
F

o
D

the total resistance presented to the


AC source.
v x ix ( R r )
B
v
R x R r R R r
B
1 2
in i
x

C-E Amplifier Output Resistance

m
o

c
.
rs

e
e
in

The output resistance is the total


equivalent resistance looking into the
output of the amplifier at coupling
capacitor C3. The input source is set to 0
and a test source is applied at the output.
vx vx
ix

gmv
But vBE=0.
be
R
ro
C
vx
Rout
R ro R
C
C
ix

g
n

E
O

a
a
F

o
D

since ro is usually >> RC.

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