Jaeger/Blalock

7/1/03
Microelectronic Circuit Design
McGraw-Hill
Chapter 13
Small-Signal Modeling and Linear
Amplification
Microelectronic Circuit Design
Richard C. Jaeger
Travis N. Blalock
Chap13 - 1
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Chapter Goals
Understanding of concepts related to:
Transistors as linear amplifiers
dc and ac equivalent circuits
Use of coupling and bypass capacitors and inductors to modify dc and
ac equivalent circuits
Small-signal voltages and currents
Small-signal models for diodes and transistors
Identification of common-source and common-emitter amplifiers
Amplifier characteristics such as voltage gain, input and output
resistances and linear signal range
Rule-of-thumb estimates for voltage gain of common-emitter and
common-source amplifiers.
Chap13 - 2
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Introduction to Amplifiers
BJT is an excellent amplifier when biased in forward-active region
FET can be used as amplifier if operated in pinch-off or saturation
region.
In these regions, transistors can provide high voltage, current and
power gains.
Bias is provided to stabilize the operating point in desired operation
region.
Q-point also determines
Small-signal parameters of transistor
Voltage gain, input resistance, output resistance
Maximum input and output signal amplitudes
Power consumption]
Chap13 - 3
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
BJT Amplifier
BJT is biased in active region by dc voltage source V
BE
. Q-point is set at (I
C
,
V
CE
)=(1.5 mA, 5 V) with I
B
= 15 A.
Total base-emitter voltage is:
be
v
BE
V
BE
v + =
Collector-emitter voltage is: This gives the load line
C
R
C
i
CE
v =10
Chap13 - 4
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
BJT Amplifier (contd.)
8 mV peak change in v
BE
gives 5 A
change in i
B
and 0.5 mA change in i
C
.
0.5 mA change in i
C
gives 1.65 V
change in v
CE
.
If changes in operating currents and
voltages are small enough, then I
C

and V
CE
waveforms are undistorted
replicas of input signal.
Small voltage change at base causes
large voltage change at collector.
Voltage gain is given by:


Minus sign indicates 180
0
phase
shift between input and output
signals.
206 180 206
0 008 . 0
180 65 . 1
be
v
ce
v
= Z =
Z
Z
= =
v
A
Chap13 - 5
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
MOSFET Amplifier
MOSFET is biased in active region by dc voltage source V
GS
. Q-point is set
at (I
D
, V
DS
)=(1.56 mA, 4.8 V) with V
GS
=3.5 V.
Total gate-source voltage is:
gs
v
GS
V
GS
v + =
1 V p-p change in v
GS
gives 1.25 mA p-p change in i
D
and 4 V p-p change
in v
DS
.
Chap13 - 6
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Coupling and Bypass Capacitors
AC coupling through capacitors is
used to inject ac input signal and
extract output signal without
disturbing Q-point
Capacitors provide negligible
impedance at frequencies of interest
and provide open circuits at dc.
C
1
and C
3
are large coupling capacitors
or dc blocking capacitors, their
reactance at signal frequency is
negligible.
C
2
is bypass capacitor, provides low
impedance path for ac current from
emitter to ground, removing R
E

(required for good Q-point stability)
from circuit when ac signals are
considered.
Chap13 - 7
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
DC and AC Analysis
DC analysis:
Find dc equivalent circuit by replacing all capacitors by open circuits
and inductors by short circuits.
Find Q-point from dc equivalent circuit by using appropriate large-
signal transistor model.
AC analysis:
Find ac equivalent circuit by replacing all capacitors by short circuits,
inductors by open circuits, dc voltage sources by ground connections
and dc current sources by open circuits.
Replace transistor by small-signal model
Use small-signal ac equivalent to analyze ac characteristics of amplifier.
Combine end results of dc and ac analysis to yield total voltages and
currents in the network.
Chap13 - 8
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
DC Equivalent for BJT Amplifier
All capacitors in original amplifier circuits are replaced by open
circuits, disconnecting v
I
, R
I
, and R
3
from circuit.
Chap13 - 9
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
AC Equivalent for BJT Amplifier

k 100 k 3 . 4
3
k 30 k 10
2
1
= =
= =
R
C
R R
R R
B
R
Chap13 - 10
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
DC and AC Equivalents for MOSFET
Amplifier
dc equivalent
ac equivalent
Simplified ac equivalent
Chap13 - 11
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Operation of Diode
The slope of the diode characteristic at the Q-
point is called the diode conductance and is
given by:





g
d
is small but non-zero for I
D
= 0 because
slope of diode equation is nonzero at origin.
Diode resistance is given by:
D
I
D
I
T
V
D
I
d
g
T
V
S
I
D
I
T
V
D
V
T
V
S
I
po Q
D
v
D
i
d
g
40
V 025 . 0
exp
int
= = ~
+
= =

c
c
=
|
|
|
.
|

\
|
For I
D
>>I
S

d
g
d
r
1
=
Chap13 - 12
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Operation of Diode
(contd.)
(
(
(
(
(

|
|
|
.
|

\
|
|
|
|
.
|

\
|
|
|
|
.
|

\
|
(
(
(
(
(

(
(
(
(
(

+ + + +
|
|
.
|

\
|
=

|
|
.
|

\
| +
= +
...
3
6
1
2
2
1
exp 1 exp
1 exp
T
V
d
v
T
V
d
v
T
V
d
v
T
V
D
v
S
I
T
V
D
V
S
I
T
V
d
v
D
V
S
I
d
i
D
I
(
(
(
(
(

|
|
.
|

\
|
= 1 exp
T
V
D
v
S
I
D
i
Subtracting I
D
from both sides of the equation,
(
(
(
(
(

|
|
|
.
|

\
|
|
|
|
.
|

\
|
+ + + + = ...
3
6
1
2
2
1
) (
T
V
d
v
T
V
d
v
T
V
d
v
S
I
D
I
d
i
For i
d
to be a linear function of signal voltage v
d
,
This represents the requirement for small-signal operation of the diode.
V 05 . 0 2 = <<
T
V
d
v
d
v
d
g
D
I
D
i
T
V
d
v
S
I
D
I
d
i + = + =
|
|
|
.
|

\
|
) (
Chap13 - 13
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Current-Controlled Attenuator
Magnitude of ac voltage v
o
developed
across diode can be controlled by value
of dc bias current applied to diode.
From dc equivalent circuit I
D
= I,
From ac equivalent circuit,
d
r
I
R
I
R
d
r
d
r
+
=
+
=
1
1
i
v
i
v
o
v
T
V
I
R
S
I I ) (
1
1
i
v
+
+
=
For R
I
=1 kO, I
S
=10
-15
A,
If I = 0, v
o
= v
i
, magnitude of v
i
is
limited to only 5 mV.
If I = 100 A, input signal is
attenuated by a factor of 5, v
i
can
have a magnitude of 25 mV.
Chap13 - 14
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small Signal Model of BJT
Using 2-port y-parameter network,


The port variables can represent either
time-varying part of total voltages and
currents or small changes in them away
from Q-point values.
ce
v
22 be
v
21
c
i
ce
v
12 be
v
11 b
i
y y
y y
+ =
+ =
T
V
o
C
I
BE
v
B
i
y
|
=
c
c
=
=
=
point Q 0
ce
v
be
v
b
i
11
0
0
be
v
ce
v
b
i
12
point Q
=
c
c
=
=
=

CE
v
B
i
y
T
V
C
I
BE
v
C
i
y =
c
c
=
=
=
point Q 0
ce
v
be
v
c
i
21
CE
V
A
V
C
I
CE
v
C
i
y
+
=
c
c
=
=
=
point Q
0
be
v
ce
v
c
i
22
|
o
is small-signal common-emitter
current gain of the BJT.
Chap13 - 15
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Hybrid-Pi Model of BJT
The hybrid-pi small-signal
model is the intrinsic low-
frequency representation of the
BJT.
Small-signal parameters are
controlled by the Q-point and
are independent of geometry of
BJT
Transconductance:
C
I
T
V
C
I
y
m
g 40
21
~ = =
Input resistance:
m
g
o
C
I
T
V
o
y
r
|
|
t
= = =
21
1
Output resistance:
C
I
A
V
C
I
CE
V
A
V
y
o
r ~
+
= =
22
1
Chap13 - 16
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Current Gain and
Amplification Factor of BJT
(
(
(
(
(

|
|
|
|
|
.
|

\
|

c
c

= =
int
1
1
po Q
C
i
F
F
C
I
F
r
m
g
o
|
|
|
t
|
|
o
> |
F
for i
C
< I
M
, and |
o
< |
F

for i
C
> I
M
, however, |
o
and |
o
are
assumed to be equal.
T
V
CE
V
A
V
C
I
CE
V
A
V
T
V
C
I
o
r
m
g
F
+
=
+
= =
Amplification factor is given by:


For V
CE
<< V
A
,

F
represents maximum voltage gain
individual BJT can provide and doesnt
change with operating point.
A
V
T
V
A
V
F
40 ~ ~
Chap13 - 17
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Equivalent Forms of Small-Signal Model
for BJT
Voltage -controlled current source g
m
v
be
can be transformed into
current-controlled current source,




Basic relationship i
c
=|i
b
is useful in both dc and ac analysis when BJT
is in forward-active region.
b
i
ce
v
b
i
c
i
b
i
b
i
be
v
b
i
be
v
o
o
r
o
o
r
m
g
m
g
r
| |
|
t
t
~ + =
= =
=
Chap13 - 18
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small Signal Operation of BJT
(
(
(
(
(

|
|
|
.
|

\
|
|
|
|
.
|

\
|
|
|
|
.
|

\
|
|
|
|
.
|

\
|
+ + + + =
= + =
...
3
6
1
2
2
1
1
exp exp
T
V
be
v
T
V
be
v
T
V
be
v
C
I
T
V
be
v
T
V
BE
V
S
I
c
i
C
I
C
i
(
(
(
(
(

|
|
.
|

\
|
=
T
V
BE
v
S
I
C
i exp
(
(
(
(
(

|
|
|
.
|

\
|
|
|
|
.
|

\
|
+ + + = = ...
3
6
1
2
2
1
T
V
be
v
T
V
be
v
T
V
be
v
C
I
C
I
C
i
c
i
For linearity, i
c
should be proportional to v
be
V 005 . 0 2 = <<
T
V
be
v
be
v
m
g
C
I
be
v
T
V
C
I
C
I
T
V
be
v
C
I
c
i + = + = + =
|
|
|
.
|

\
|
1
Change in i
c
that corresponds to small-signal operation is:

200 . 0
025 . 0
005 . 0
= s = =
T
V
be
v
be
v
C
I
m
g
C
I
c
i
Chap13 - 19
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Model for pnp BJT
For pnp transistor



Signal current injected into base
causes decrease in total collector
current which is equivalent to
increase in signal current entering
collector.
b
i
F B
I
F
c
i -
C
I
C
i
b
i -
B
I
B
i
| | = =
=
Chap13 - 20
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Analysis of Complete C-E
Amplifier: AC Equivalent
Ac equivalent circuit is
constructed by assuming that all
capacitances have zero
impedance at signal frequency
and dc voltage source is ac
ground.
Assume that Q-point is already
known.
2
1
R R
B
R =
Chap13 - 21
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Analysis of Complete C-E
Amplifier: Small-Signal Equivalent
3
R
C
R
o
r
L
R =
L
R
m
g
be
v
o
v
b
v
c
v
vt
A = = =
Terminal voltage gain between
base and collector is:
Overall voltage gain from source v
i

to output voltage across R
3
is:
( )(
(
(
(

|
|
|
.
|

\
|
|
|
|
.
|

\
|
|
|
|
.
|

\
|
+
=
= = =
t
t
r
B
R
I
R
r
B
R
L
R
m
g
v
A
i
v
be
v
vt
A
i
v
be
v
be
v
o
v
i
v
o
v
v
A
Chap13 - 22
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
C-E Amplifier Voltage Gain: Example
Problem: Calculate voltage gain
Given data: |
F
=100, V
A
=75 V, Q-point is(1.45 mA, 3.41 V), R
1
= 10
kO, R
2
= 30 kO, R
3
= 100 kO, R
C
= 4.3 kO, R
I
= 1kO.
Assumptions: Transistor is in active region, |
O
= |
F
. Signals are low
enough to be considered small signals.
Analysis:
( )
dB 3 . 42 130= =
+
=
(
(
(
(

t
t
r
B
R
I
R
r
B
R
L
R
m
g
v
A
mS 0 . 58 ) mA 45 . 1 ( 40 40 = = =
C
I
m
g
k 72 . 1
mA 45 . 1
) V 025 . 0 ( 100
= = =
C
I
T
V
o
r
|
t
k 1 . 54
mA 45 . 1
V 14 . 3 V 75
=
+
=
+
=
C
I
CE
V
A
V
o
r
k 5 . 7
2
1
= = R R
B
R
k 83 . 3
3
= = R
C
R
o
r
L
R
( )
mV 57 . 8
) (
V) 005 . 0 ( =
+
s
(
(
(
(

t
t
r
B
R
r
B
R
I
R
i
v
Chap13 - 23
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Model Simplification
If we assume




Generally R
3
>> R
C
and load resistor << r
o
. If we assume I
C
R
C
= V
CC

with 0<<1

For this case, =1/3 since common design allocates one-third power
supply across R
C
. To further account for other approximations leading
to this result, we use:
Also, if load resistor is forced to approach r
o
, R
C
and R
3
are infinite,
voltage gain is limited by amplification factor,
f
of BJT itself.
t
r
B
R
I
R <<
|
|
.
|

\
|
= = ~
3
R
C
R
o
r
m
g
L
R
m
g
vt
A
v
A
This implies that total signal voltage at input
appears across r
t
.
CC
V
T
V
C
R
C
I
C
R
m
g
vt
A
v
A , 40 = = = ~
CC
V
v
A 10 ~
Chap13 - 24
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
C-E Amplifier Input Resistance
Input resistance, the total resistance
looking into the amplifier at
coupling capacitor C
1
represents
total resistance presented to source.
t t
t
r R R r
B
R R
r
B
R
2
1
x
i
x
v
in
) (
x
i
x
v
= = =
=
Chap13 - 25
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
C-E Amplifier Output Resistance
Output resistance is the total equivalent
resistance looking into the output of the
amplifier at coupling capacitor C
3.
Input
source is set to 0 and test source is
applied at output.
C
R
o
r
C
R R
m
g
o
r
C
R
~ = =
+ + =
x
i
x
v
out
be
v
x
v
x
v
x
i
But v
be
=0.
As r
o
>> R
C
.
Chap13 - 26
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Sample Analysis of C-E Amplifier
Problem: Find voltage gain, input
and output resistances.
Given data: |
F
= 65, V
A
=50 V
Assumptions: Active-region
operation, V
BE
=0.7 V, small signal
operating conditions.
Analysis: To find the Q-point,
dc equivalent circuit is
constructed.
A 245 66
A 241 65
A 71 . 3
= =
= =
=
B
I
E
I
B
I
C
I
B
I
5 )
4
10 6 . 1 ( ) 1 (
5
10 = + + +
B
I
F BE
V
B
I |
V 67 . 3
0 ) 5 ( )
4
10 6 . 1 (
4
10 5
=
=
CE
V
E
I
CE
V
C
I
Chap13 - 27
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Sample Analysis of C-E Amplifier
(contd.)
Next we construct the ac
equivalent and simplify it.
0 . 84
in
in
)
3
out
( =
+
= =
(
(
(
(
(

R
I
R
R
R R
m
g
i
v
o
v
v
A
S
3
10 64 . 9 40

= =
C
I
m
g
k 64 . 6 = =
C
I
T
V
o
r
|
t
k 223 =
+
=
C
I
CE
V
A
V
o
r
k 23 . 6
in
= =
t
r
B
R R
k 57 . 9
out
= =
o
r
C
R R
Chap13 - 28
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small Signal Model of MOSFET
Using 2-port y-parameter network,


The port variables can represent either
time-varying part of total voltages and
currents or small changes in them away
from Q-point values.
ds
v
22
gs
v
21 d
i
ds
v
12
gs
v
11
g
i
y y
y y
+ =
+ =
0
0
ds
v
gs
v
g
i
11
point Q
=
c
c
=
=
=

GS
v
G
i
y
0
0
gs
v
ds
v
g
i
12
point Q
=
c
c
=
=
=

DS
v
G
i
y
TN
V
GS
V
D
I
GS
v
D
i
y

=
c
c
=
=
=

2
0
ds
v
gs
v
d
i
21
point Q
DS
V
D
I
DS
v
D
i
y
+
=
c
c
=
=
=

1
0
gs
v
ds
v
d
i
22
point Q
Chap13 - 29
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small Signal Parameters of MOSFET
Since gate is insulated from
channel by gate-oxide input
resistance of transistor is infinite.
Small-signal parameters are
controlled by the Q-point.
For same operating point,
MOSFET has higher
transconductance and lower output
resistance that BJT.
Transconductance:
D
I
n
K
TN
V
GS
V
D
I
y
m
g 2
2
21
=

= =
Output resistance:
D
I
D
I
DS
V
y
o
r

1
1
22
1
~
+
= =
Amplification factor for V
DS
<<1:



D
I
n
K
D
I
DS
V
o
r
m
g
f
2
1
1

~
+
= =
Chap13 - 30
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small Signal Operation of MOSFET
( ) ( )
(
(

+ + = + =
2
2
2
2
gs
v
TN
V
GS
V
gs
v
TN
V
GS
V
n
K
d
i
D
I
D
i
2
2
|
|
.
|

\
|
=
TN
V
GS
v
n
K
D
i
For linearity, i
d
should be proportional to v
gs
Since MOSFET can be biased with (V
GS
- V
TN
) equal to several volts, it
can handle much larger values of v
gs
than corresponding values of v
be
for
BJT.
|
|
.
|

\
|
<<
TN
V
GS
V
gs
v 2 . 0
Change in drain current that corresponds to small-signal operation is:

4 . 0
2
) ( 2 . 0
s

= =
TN
V
GS
V
TN
V
GS
V
gs
v
D
I
m
g
D
I
d
i
( )
(
(

+ =
2
2
2
gs
v
TN
V
GS
V
gs
v
n
K
d
i
for
TN
V
GS
v
DS
v >
Chap13 - 31
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Body Effect in Four-terminal MOSFET
Drain current depends on threshold voltage which
in turn depends on v
SB
. Back-gate
transconductance is:




0<<1 is called back-gate tranconductance
parameter.

Bulk terminal is a reverse-biased diode. Hence, no
conductance from bulk terminal to other terminals.
q q
m
g
m
g
SB
v
TN
V
TN
V
D
i
SB
v
D
i
BS
v
D
i
mb
g
po Q
po Q po Q
= =
|
|
.
|

\
|
c
c
|
|
.
|

\
|
c
c
=
c
c
=
c
c
=

) (
int
int int
Chap13 - 32
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Model for PMOS
Transistor
For pnp transistor


Positive signal voltage v
gg
reduces
source-gate voltage of the PMOS
transistor causing decrease in total
current exiting drain, equivalent to
increase in signal current entering
drain.
d
i -
D
I
C
i
gg
v -
GG
V
SG
v
=
=
Chap13 - 33
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Analysis of Complete C-S
Amplifier: AC Equivalent
Ac equivalent circuit is
constructed by assuming that all
capacitances have zero
impedance at signal frequency
and dc voltage sources represent
ac grounds.
Assume that Q-point is already
known.
2
1
R R
G
R =
Chap13 - 34
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Analysis of Complete C-E
Amplifier: Small-Signal Equivalent
3
R
D
R
o
r
L
R =
L
R
m
g
gs
v
o
v
g
v
d
v
vt
A = = =
Terminal voltage gain between
gate and drain is:
Overall voltage gain from source v
i

to output voltage across R
3
is:
(
(
(
(
(

|
|
|
.
|

\
|
|
|
|
.
|

\
|
|
|
|
.
|

\
|
+
=
= = =
G
R
I
R
G
R
L
R
m
g
v
A
i
v
gs
v
vt
A
i
v
gs
v
gs
v
o
v
i
v
o
v
v
A
Chap13 - 35
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
C-S Amplifier Voltage Gain: Example
Problem: Calculate voltage gain
Given data: K
n
= 0.5 mA/V
2
, V
TN
= 1V, = 0.0133 V
-1
, Q-point is
(1.45 mA, 3.86 V), R
1
= 430 kO, R
2
= 560 kO, R
3
= 100 kO, R
D
= 4.3
kO, R
I
= 1 kO.
Assumptions: Transistor is in active region. Signals are low enough to
be considered small signals.
Analysis:
dB 4 . 13 69 . 4 = =
+
=
(
(
(
(
(

G
R
I
R
G
R
L
R
m
g
v
A
mS 23 . 1 ) 1 ( 2 = + =
DS
V
DS
I
n
K
m
g
k 5 . 54
1
=
+
=
D
I
DS
V
o
r

k 243
2
1
= = R R
G
R
k 83 . 3
3
= = R
D
R
o
r
L
R
V 48 . 0
2
2 . 0 2 . 0 = ~ s
|
|
.
|

\
|
n
K
D
I
TN
V
GS
V
i
v
Chap13 - 36
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small-Signal Model Simplification
If we assume




Generally R
3
>> R
D
and load resistor << r
o
. Hence, total load resistance
on drain is R
D
. For this case, common design allocates half the power
supply for voltage drop across R
D
and (V
GS
- V
TN
) =1V



Also, if load resistor is forced to approach r
o
, R
D
and R
3
are infinite,
voltage gain is limited by amplification factor,
f
of MOSFET itself.
G
R
I
R <<
|
|
.
|

\
|
= = ~
3
R
D
R
o
r
m
g
L
R
m
g
vt
A
v
A
This implies that total signal voltage at input
appears across gate-source terminals.
DD
V
TN
V
GS
V
D
R
D
I
D
R
m
g
v
A =

= ~
2
Chap13 - 37
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
C-S Amplifier Input Resistance
Input resistance of C-S amplifier is
much larger than that of
corresponding C-E amplifier.
G
R R
G
R
=
=
in
x
i
x
v
Chap13 - 38
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
C-S Amplifier Output Resistance
For comparable bias points, output
resitances of C-S and C-E amplifiers are
similar.
D
R
o
r
D
R R ~ = =
x
i
x
v
out
In this case, v
gs
=0.
As r
o
>> R
D
.
Chap13 - 39
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Sample Analysis of C-S Amplifier
Problem: Find voltage gain, input
and output resistances.
Given data: K
n
= 500 A/V
2
, V
TN

= 1V, = 0.0167 V
-1

Analysis: Dc equivalent circuit
is constructed.
6
10 5
1

=
DS
V
I
)
1
(
4
10 2 10 I
D
I
DS
V + =
V 5
2
) 4 . 0 (
2
=
=
DS
V
TN
V
DS
V
n
K
D
I
V 2 =
GS
V A 0 25 =
D
I
Chap13 - 40
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Sample Analysis of C-S Amplifier
(contd.)
Next we construct the ac
equivalent and simplify it.
93 . 7
in
in
)
3
out
( =
+
= =
(
(
(
(
(

R
I
R
R
R R
m
g
i
v
o
v
v
A
M 1
2
1 in
= =
G
R
G
R R
k 2 . 18
3
out
= =
G
R
D
R
o
r R
S
4
10 20 . 5 ) 1 ( 2 = + =
DS
V
DS
I
n
K
m
g
k 260
1
=
+
=
D
I
DS
V
o
r

Chap13 - 41
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small Signal Parameters of JFET
T
V
SG
I
G
I
GS
v
G
i
y
r
+
=
c
c
= =
point Q
11
1
t
) (
2
2
2
point Q
21
P
V
GS
V
P
V
DSS
I
P
V
GS
V
D
I
GS
v
D
i
y
m
g
~

c
c
= =
DS
V
D
I
DS
v
D
i
y
o
r
+
=
c
c
= =

1 22
1
point Q
|
|
.
|

\
|
|
|
|
|
|
.
|

\
|
+ =
DS
v
P
V
GS
v
DSS
I
D
i 1
2
1
for
P
V
GS
v
DS
v >
|
|
|
|
|
.
|

\
|
|
|
|
|
|
.
|

\
|
= 1 exp
T
V
GS
v
SG
I
G
i
Chap13 - 42
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Small Signal Model of JFET
Since JFET is normally operated
with gate junction reverse-
biased,




=
=
g
r
SG
I
G
I
For small signal operation,
condition on input is:





Amplification factor is given by:
|
|
.
|

\
|
<<
P
V
GS
V
gs
v 2 . 0
D
I
DSS
I
P
V
P
V
GS
V
DS
V
o
r
m
g
f

2
1
2 ~

+
= =
Chap13 - 43
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Sample Analysis of JFET C-S Amplifier
Problem: Find voltage gain, input
and output resistances.
Given data: I
DSS
= 1 mA, V
P
= -1V,
= 0.02 V
-1
Assumptions: Pinch-off region of
operation.
Analysis: Dc equivalent circuit is
constructed. I
G
= 0, I
S
= I
D
.


Choose V
GS
less negative than V
P
.
D
I
GS
V 2000 =
mA 250 . 0
V 5 . 0
=
=
D
I
GS
V
2
) 1 (
1 )
3
10 1 )(
3
10 2 (
|
|
|
|
.
|

\
|

=
GS
V
GS
V
V 75 . 4
2000 000 , 27 12
=
+ + =
DS
V
S
I
DS
V
D
I
Chap13 - 44
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Sample Analysis of JFET C-S Amplifier
(contd.)
Next we construct the ac
equivalent and simplify it.
3 . 20
in
in
)
3
out
( =
+
= =
(
(
(
(
(

R
I
R
R
R R
m
g
i
v
o
v
v
A
M 1
in
= =
G
R R
k 0 . 24
out
= =
D
R
o
r R
mS 05 . 1 ) 1 (
2
= + =
DS
V
DS
I
DSS
I
P
V
m
g
k 219
1
=
+
=
DS
I
DS
V
o
r

Chap13 - 45
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Amplifier Power Dissipation
Static power dissipation in amplifiers is determined from their dc
equivalent circuits.
B
I
BE
V
C
I
CE
V
D
P + =
Total power dissipated in C-B
and E-B junctions is:
where
Total power supplied is:
E
I
EE
V
C
I
CC
V
S
P + =
BE
V
CB
V
CE
V + =
Total power dissipated in
transistor is:

Total power supplied is:
D
I
DS
V
G
I
GS
V
D
I
DS
V
D
P = + =
D
I
DD
V
S
P =
Chap13 - 46
Jaeger/Blalock
7/1/03
Microelectronic Circuit Design
McGraw-Hill
Amplifier Signal Range
BE
V
CE
V
M
V
t
M
V
CE
V
CE
v
s
= e sin V 7 . 0 >
CE
v But
0 sin ) ( > + = t
M
V
C
R
C
I t
C
R
v e
(
(

s
BE
V
CE
V
C
R
C
I
M
V , min
Also
C
R
C
I
M
V s But
Similarly for MOSFETs and JFETs,
(
(

s )) ( ( , min
TN
V
GS
V
DS
V
D
R
D
I
M
V
(
(

s )) ( ( , min
P
V
GS
V
DS
V
D
R
D
I
M
V
Chap13 - 47