RFP25N05: S.mi-Dondiicto'i Lpioduati, One.

^s.mi-dondiicto'i Lpioduati, One..
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
RFP25N05
Features
25A, 50V, 0.047 Ohm, N-Channel Power

MOSFET
25A,50V
The RFP25N05 N-channel power MOSFET is manufactured

using the MegaFET process. This process which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. This transistor can be operated directly
from integrated circuits.
Ordering Information
PART NUMBER
RFP25N05
PACKAGE
TO-220AB
BRAND
rDS(ON) = 0.0470
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175C Operating Temperature
Symbol
RFP25N05
NOTE: When ordering use the entire part number.
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Downloaded from: http://www.datasheetcatalog.com/
RFP25N05
Absolute Maximum Ratings Tc = 25C, Unless Otherwise Specified
Drain to Source Voltage (Note 1 )
..........................................
VDSS
Drain to Gate Voltage
Gate to Source Voltage
..................................................
ID
Continuous Drain Current
Pulsed Drain Current (Note 3)
..............................................
IDM
Pulsed Avalanche Rating
.................................................
EAS
Maximum Power Dissipation
...............................................
Prj
Linear Derating Factor
.......................................................
Operating and Storage Temperature
....................................
Tj, TSTG
Maximum Temperature for Soldering
Leads at0.063in (1.6mm) from Case for 10s
..................................
T|_
Package Body for 10s, See Techbrief 334
..................................
Tpkg
RFP25N05
50
50
20
25
Refer to Peak Current Curve
Refer to UIS Curve
72
0.48
UNITS
V
V
V
A
A
-55 to 175
w/c
c
300
260
c
c
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25Cto150C.
Electrical Specifications
Tc = 25C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
SYMBOL
BVDSS
50
MAX
UNITS
VDS = Rated BVDSS, VGS = 0V
HA
VDS = 8 x Rated BVDSS,TC = 150C
25
uA
VGS = 20V
100
nA
ID = 25A, VGS = 10V (Figure 9)
0.047
VDD = 25V, ID =12.5A, RL = 2.0Q,

VQS- iov, RQ - 10 Q
(Figure 13)
60
ns
14
ns
tr
30
ns
'd(OFF)
45
ns
tf
22
ns
VGS(TH)
'DSS
!GSS
rDS(ON)
Turn-On Time
'ON
Turn-On Delay Time
td(ON)
Rise Time
Fall Time
Turn-Off Time
ID = 250nA, VGS = 0V (Figure 1 1 )

VGS = V DS.
'D = 250mA (Figure 10)
100
ns
80
nC
45
nC
nC
VDS = 25V- VGS = ov,
1075
PF
f = 1MHz
(Figure 12)
350
PF
100
pF
2.083
C/W
80
c/w
MIN
TYP
MAX
UNITS
1.5
125
ns
1OFF
QG(TOT)
VGS = 0V to 20V
Gate Charge at 10V
.G(10)
VGS = OVto 10V
Threshold Gate Charge
QG(TH)
VGS = ov to 2V
Total Gate Charge
TYP
-
Gate to Source Leakage Current
Turn-Off Delay Time
WIN
Zero Gate Voltage Drain Current
Drain to Source On Resistance
TEST CONDITIONS
Input Capacitance
CISS
Output Capacitance
c oss
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
Rejc
Thermal Resistance Junction to Ambient
VDD = 4ov,
ID - 25A, RL = 1.6JJ
'g(REF) = 0.75mA
(Figure 13)
(Figure 3)
RejA
Source to Drain Diode Specifications

PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
ISD = 25A
tRR
ISD = 25A, dlSD/dt = 100A/HS
NOTES:
2. Pulse test: pulse width < 300|j.s, duty cycle < 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve
This datasheet has been downloaded from:

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^s.mi-dondiicto'i Lpioduati, One..

TELEPHONE: (973) 376-2922

25A, 50V, 0.047 Ohm, N-Channel Power

The RFP25N05 N-channel power MOSFET is manufactured

NOTE: When ordering use the entire part number.

Tc = 25C, Unless Otherwise Specified

VDS = Rated BVDSS, VGS = 0V

VDS = 8 x Rated BVDSS,TC = 150C

ID = 25A, VGS = 10V (Figure 9)

VDD = 25V, ID =12.5A, RL = 2.0Q,

Turn-On Delay Time

ID = 250nA, VGS = 0V (Figure 1 1 )

'D = 250mA (Figure 10)

VDS = 25V- VGS = ov,

Gate Charge at 10V

VGS = OVto 10V

Threshold Gate Charge

Total Gate Charge

Gate to Source Leakage Current

Turn-Off Delay Time

Zero Gate Voltage Drain Current

Drain to Source On Resistance

Reverse Transfer Capacitance

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

Source to Drain Diode Specifications

ISD = 25A, dlSD/dt = 100A/HS

Downloaded from: http://www.datasheetcatalog.com/

This datasheet has been downloaded from:

Downloaded from: http://www.datasheetcatalog.com/

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