NPN Transistors: Lead (PB) - Free
NPN Transistors: Lead (PB) - Free
NPN Transistors: Lead (PB) - Free
1. EMITTER 1
2. COLLECTOR 2
3
3. BASE
0.4
ON CHARACTERISTICS
DC Current Gain
VCE=6.0V, IC=1mA hFE1 70 - 700 -
VCE=6.0V, IC=0.1mA hFE2 40
Collector-Emitter Saturation Voltage -
VCE(sat) - 0.3 V
IC=100mA, IB=10mA
Base-Emitter Voltage
VBE(sat) - - 1.0 V
IC=100mA, IB=10mA
TransitionFrequence
fT 200 - - MHz
VCE = 6V, IC = 10mA, f = 30MHz
Collector Output Capacitance
Cob - - 3.0 pF
VCB = 10V, IE = 0, f = 1MHz
Noise gure
NF - 4.0 10 dB
VCE = 6V, IC = 0.1mA, Rg = 10k, f = 1KMHz
CLASSIFICATION OF hFE1
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
FIG.3 Collector and Bade Saturation Voltage FIG.4 Gain Bandwidth Product vs
vs Collector Current Emitter Current
TO-92
Dim
H
Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
E
L
4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D