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Features: Elektronische Bauelemente 2A, 50V P Plastic Encapsulated Transistor

1) The 2SC2655L is a low saturation voltage (VCE(sat)=0.5V max), high speed switching time (tstg=1μs typ) NPN bipolar transistor in a TO-92L plastic package. 2) It has an absolute maximum collector-emitter voltage of 50V and continuous collector current of 2A, and is classified based on its DC current gain hFE range as either 70-140 (type -O) or 120-240 (type -Y). 3) Key electrical characteristics include a breakdown voltage of 50V minimum, saturation voltage of 0.5V maximum, and transition frequency of 100MHz typical.

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Luis Figueroa
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62 views

Features: Elektronische Bauelemente 2A, 50V P Plastic Encapsulated Transistor

1) The 2SC2655L is a low saturation voltage (VCE(sat)=0.5V max), high speed switching time (tstg=1μs typ) NPN bipolar transistor in a TO-92L plastic package. 2) It has an absolute maximum collector-emitter voltage of 50V and continuous collector current of 2A, and is classified based on its DC current gain hFE range as either 70-140 (type -O) or 120-240 (type -Y). 3) Key electrical characteristics include a breakdown voltage of 50V minimum, saturation voltage of 0.5V maximum, and transition frequency of 100MHz typical.

Uploaded by

Luis Figueroa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SC2655L

2A , 50V
Elektronische Bauelemente P Plastic Encapsulated Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen & lead-free

TO-92L
FEATURES G H
 Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A)
1 Emitter
 High speed switching time：tstg=1µs(Typ.) 2 Collector
3 Base
J
CLASSIFICATION OF hFE (1) A D
Product-Rank 2SC2655L-O 2SC2655L-Y
Range 70-140 120-240

E C F

Collector
2
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 4.70 5.10 F 0.35 0.45
3
B 7.80 8.20 G 1.27 TYP.
Base
C 13.80 14.20 H 1.28 1.58
D 3.70 4.10 J 2.44 2.64
1 E 0.35 0.55 K 0.60 0.80
Emitter
ABSOLUTE MAXIMUM RATINGS (TA =25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 50 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 5 V
Collector Current - Continuous IC 2 A
Collector Power Dissipation PC 0.9 W
Junction, Storage Temperature TJ, TSTG -55~150 °C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)


Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO 50 - - V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=10mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0
Collector Cut-Off Current ICBO - - 1 µA VCB=50V, IE=0
Emitter Cut-Off Current IEBO - - 1 µA VEB=5V, IC=0
hFE (1) 70 - 240 VCE=2V, IC=0.5A
DC Current Gain
hFE (2) 40 - - VCE=2V, IC=1.5A
Collector to Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=1A, IB=0.05A
Base to Emitter Saturation Voltage VBE(sat) - - 1.2 V IC=1A, IB=0.05A
Transition Frequency fT - 100 - MHz VCE=2V, IC=0.5A
Collector Output Capacitance Cob - 30 - pF VCB=10V, IE=0, f=1MHz
Turn-on Time Ton - 0.1 - VCC=30V
Switch Time Storage Time Ts - 1 - µs IB1= -IB2=0.05A
Fall Time Tf - 0.1 - IC=1A

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

24-Jul-2017 Rev. A Page 1 of 2


2SC2655L
2A , 50V
Elektronische Bauelemente P Plastic Encapsulated Transistor

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

24-Jul-2017 Rev. A Page 2 of 2

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