INTEGRATED CIRCUITS

NE/SA5521
LVDT signal conditioner

Product data 2002 Nov 05

Supersedes data of 1994 Aug 31






Philips Semiconductors Product data

LVDT signal conditioner NE/SA5521

DESCRIPTION PIN CONFIGURATIONS

The NE/SA5521 is a signal conditioning circuit for use with Linear
N Package
Variable Differential Transformers (LVDTs) and Rotary Variable
Differential Transformers (RVDTs). The chip includes a low AMP OUT 1 18 V+
distortion, amplitude-stable sine wave oscillator with programmable
+IN 2 17 C
frequency to drive the primary of the LVDT/RVDT, a synchronous T
demodulator to convert the LVDT/RVDT output amplitude and phase IN 3 16 V
REF
to position information, and an output amplifier to provide LVDT IN 4 15 FEEDBACK
amplification and filtering of the demodulated signal. DEMOD OUT 5 14 OSC

SYNC 6 13 OSC

GND 7 12 V
FEATURES REF/2

Low distortion N.C. 8 11 R

T
N.C. 9 10 N.C.
Single supply 5 V to 20 V, or dual supply 2.5 V to 10 V
Oscillator frequency 1 kHz to 20 kHz
TOP VIEW

Capable of ratiometric operation D1 Package

Low power consumption (182 mV typ)
AMP OUT 1 16 V+
+IN 2 15 CT

APPLICATIONS IN 3 14 V
REF
LVDT signal conditioning LVDT IN 4 13 FEEDBACK

RVDT signal conditioning

DEMOD OUT 5 12 OSC
SYNC 6 11 OSC
LPDT signal conditioning GND 7 10 VREF/2

Bridge circuits N.C. 8 9 RT

TOP VIEW
NOTE:
1. SOL released in large SO package only. SL00326

Figure 1. Pin configurations

ORDERING INFORMATION
ORDER CODE DESCRIPTION TEMPERATURE RANGE DWG #
NE5521D 16-Pin Small Outline Large (SOL) Package 0 C to +70 C SOT162-1
NE5521N 18-Pin Plastic Dual In-Line Package (DIP) 0 C to +70 C SOT102-4
SA5521D 16-Pin Small Outline Large (SOL) Package 40 C to +85 C SOT162-1
SA5521N 18-Pin Plastic Dual In-Line Package (DIP) 40 C to +85 C SOT102-4

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT
VCC Supply voltage +20 V
Split supply voltage 10 V
Tamb Operating temperature range
NE5521 0 to 70 C
SA5521 40 to +85 C
Tstg Storage temperature range 65 to +125 C
PD Power dissipation1 910 mW
NOTES:
1. For derating, see typical power dissipation versus load curves (Figure 3).

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Philips Semiconductors Product data

LVDT signal conditioner NE/SA5521

BLOCK DIAGRAM
VREF

16
15
FEEDBACK

10 k

10 k
17 SINE 13
CT OSC OSC
CONV + +
11 14
RT OSC
10 k 12
18 VREF/2
V+
10 k
7
GND/V
3 AUX AMP
IN

4
2 LVDT IN
+IN +
SYNCHRONOUS
DEMODULATOR 6
AMP 1 SYNC
OUT

DEMOD OUT

NOTE:
Pin numbers are for N packages. SL00327

Figure 2. Block diagram.

PIN DEFINITIONS FOR D AND N PACKAGES

PIN NO.
SYMBOL DEFINITION
D N
1 1 Amp Out Auxiliary Amplifier Out.
2 2 +IN Auxiliary Amplifier non-inverting input.
3 3 IN Auxiliary Amplifier inverting input.
4 4 LVDT IN Input to Synchronous Demodulator from the LVDT/RVDT secondary.
5 5 DEMOD OUT Pulsating DC output from the Synchronous Demodulator output. This voltage should be filtered before use.
6 6 SYNC Synchronizing input for the Synchronizing Demodulator. This input should be connected to the OSC or OSC
output. Sync is referenced to VREF/2.
7 7 GND Device return. Should be connected to system ground or to the negative supply.
8 8 NC No internal connection.
-- 9 NC No internal connection.
-- 10 NC No internal connection.
9 11 RT A temperature stable 18 k resistor should be connected between this pin and Pin 7.
10 12 VREF/2 A high impedance source of one half the potential applied to VREF. The LVDT/RVDT secondary return
should be to this point. A bypass capacitor with low impedance at the oscillator frequency should also be
connected between this pin and ground.
11 13 OSC Oscillator sine wave output that is 180 out of phase with the OSC signal. The LVDT/RVDT primary is usually
connected between OSC and OSC pins.
12 14 OSC Oscillator sine wave output. The LVDT/RVDT primaries are usually connected between OSC and OSC pins.
13 15 FEEDBACK Usually connected to the OSC output for unity gain, a resistor between this pin and OSC, and one between
this pin and ground can provide for a change in the oscillator output pin amplitudes.
14 16 VREF Reference voltage input for the oscillator and sine converter. This voltage MUST be stable and must not
exceed +V supply voltage.
15 17 CT Oscillator frequency-determining capacitor. The capacitor connected between this pin and ground should be
a temperature-stable type.
16 18 +V Positive supply connection.

2002 Nov 05 3
Philips Semiconductors Product data

LVDT signal conditioner NE/SA5521

DC ELECTRICAL CHARACTERISTICS
V+ = VREF = 10 V; Tamb = 0 C to 70 C for NE5521, Tamb = 40 C to 85 C for SA5521; Frequency = 1 kHz, unless otherwise noted.
NE5521 SA5521
SYMBOL PARAMETER TEST CONDITIONS UNIT
Min Typ Max Min Typ Max
VCC Supply current 12.9 20 12.9 18 mA
IREF Reference current 5.3 8 5.3 8 mA
VREF Reference voltage range 5 V+ 5 V+ V
PD Power dissipation 182 280 182 260 mW
Oscillator Section
V REF V REF
Oscillator output RL = 10 k VRMS
8.8 8.8
THD Sine wave distortion No load 1.5 1.5 %
Initial amplitude error Tamb = 25 C 0.4 3 0.4 3 %
Tempco of amplitude 0.005 0.01 0.005 0.01 %/C
Init. accuracy of oscillator freq. Tamb = 25 C 0.9 5 0.9 5 %
Temperature coeff. of frequency1 0.05 0.05 %/C
Voltage coeff. of frequency 2.5 3.3 %/V(VREF)
Min OSC (OSC) Load2 300 170 300 170
Demodulator Section
r Linearity error 5 VP-P input 0.05 0.1 0.05 0.1 %FS
V REF V REF
Maximum demodulator input VP-P
2 2
VOS Demodulator offset voltage 1.4 5 1.4 5 mV
TCVOS Demodulator offset voltage drift 5 25 5 25 V/5C
IBIAS Demodulator input current 600 234 500 234 nA
VR/2 accuracy 0.1 1 0.1 1 %
Auxiliary Output Amplifier
VOS Input offset voltage 0.5 5 0.5 5 mV
IBIAS Input bias current 600 210 500 210 nA
IOS Input offset current 10 50 10 50 nA
AV Gain 100 385 100 385 V/mV
SR Slew rate 1.3 1.3 V/s
GBW Unity gain bandwidth product AV = 1 1.6 1.6 MHz
Output voltage swing RL = 10 k 7 8.2 7 8.2 V
Output short circuit current to
Tamb = 25 C 42 100 42 100 mA
ground or to VCC
NOTES:
1. This is temperature coefficient of frequency for the device only. It is assumed that CT and RT are fixed in value and CT leakage is fixed over
the operating temperature range.
2. Minimum load impedance for which distortion is guaranteed to be less than 5%.

2002 Nov 05 4
Philips Semiconductors Product data

LVDT signal conditioner NE/SA5521

DEFINITION OF TERMS
TERM DEFINITION
Oscillator output RMS value of the AC voltage at the oscillator output pin. This output is referenced to VREF/2
and is a function of VREF.
Sine wave distortion The Total Harmonic Distortion (THD) of the oscillator output with no load. This is not a critical
specification in LVDT/RVDT systems. This figure could be 15% or more without affecting
system performance.
Initial amplitude error A measure of the interchangeability of NE/SA5521 parts, not a characteristic of any one
part. It is the degree to which the oscillator output of a number of NE/SA5521 samples will
vary from the median of that sample.
Initial accuracy of oscillator frequency Another measure of the interchangeability of individual NE/SA5521 parts. This is the degree
to which the oscillator frequency of a number of NE/SA5521 samples will vary from the
median of that sample with a given timing capacitor.
Tempco of oscillator amplitude A measure of how the oscillator amplitude varies with ambient temperature as that
temperature deviates from a 25 C ambient.
Tempco of oscillator frequency A measure of how the oscillator frequency varies with ambient temperature as that
temperature deviates from a 25 C ambient.
Voltage coefficient of oscillator frequency The degree to which the oscillator frequency will vary as the reference voltage (VREF)
deviates from +10 V.
Min OSC (OSC) load Minimum load impedance for which distortion is guaranteed to be less than 5%.
Linearity error The degree to which the DC output of the demodulator/amplifier combination matches a
change in the AC signal at the demodulator input. It is measured as the worst case
nonlinearity from a straight line drawn between positive and negative fullscale end points.
Maximum demodulator input The maximum signal that can be applied to the demodulator input without exceeding the
specified linearity error.

APPLICATION INFORMATION
V REF * 1.3V
OSC frequency +
V REF (R T ) 1.5k) C T

2000
PD(max) (N PACKAGE)
DEVICE POWER DISSIPATION (mW)

1000 AT Tamb = +70 C, Tj(max) = +150 C

800 PD(max) (SO PACKAGE)
700 AT Tamb = +85 C, Tj(max) = +150 C

600 VREF = V+ = 20V

500

400
15V
300
10V
200

100 5V

0.2 0.4 0.6 0.8 1 2 3

OSCOSC LOAD (k)
SL00328

Figure 3. Device power dissipation versus OSC OSC Load at +25 C

2002 Nov 05 5
Philips Semiconductors Product data

LVDT signal conditioner NE/SA5521

16 16

14 ICC
8
12
fOSC

I(mA)
(%) 0 10

8
8
6 IREF

16 4
5 8 10 12 14 16 18 20 55 40 0 25 70 85 125

VCC = VREF (V) Tamb (C)

SL00329 SL00331

Figure 4. Oscillator frequency variation with voltage Figure 6. IREF and ICC versus Temperature
(Normalized to VREF = VCC = 10 V) Tamb = +25 C (VREF = VCC = 10 V)

20

15 ICC
I(mA)

10
IREF

0 5 10 15 20 25
VCC = VREF (V)
SL00330

Figure 5. IREF and ICC versus voltage (Tamb = +25 C)

2002 Nov 05 6
Philips Semiconductors Product data

LVDT signal conditioner NE/SA5521

DIP18: plastic dual in-line package; 18 leads (300 mil); long body SOT102-4

2002 Nov 05 7
Philips Semiconductors Product data

LVDT signal conditioner NE/SA5521

SO16: plastic small outline package; 16 leads; body width 7.5 mm SOT162-1

2002 Nov 05 8
Philips Semiconductors Product data

LVDT signal conditioner NE/SA5521

REVISION HISTORY
Rev Date Description
_2 20021105 Product data; second version (9397 750 10666). Supersedes NE/SA/SE5521 of 1994 Aug 31.
Engineering Change Notice 8530043 29139 (date: 20021101).
Modifications:
Delete SE5521 and ceramic package options.
_1 19940831 Product data; initial version.
Engineering Change Notice 8530043 13721 (date: 19940831).

2002 Nov 05 9
Philips Semiconductors Product data

LVDT signal conditioner NE/SA5521

Data sheet status

Product Definitions
Level Data sheet status [1]
status [2] [3]
I Objective data Development This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

Definitions
Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Disclaimers
Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes Philips Semiconductors reserves the right to make changes in the productsincluding circuits, standard cells, and/or softwaredescribed
or contained herein in order to improve design and/or performance. When the product is in full production (status Production), relevant changes will be communicated
via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent,
copyright, or mask work right infringement, unless otherwise specified.

Contact information Koninklijke Philips Electronics N.V. 2002

For additional information please visit All rights reserved. Printed in U.S.A.
http://www.semiconductors.philips.com. Fax: +31 40 27 24825
Date of release: 11-02
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com. Document order number: 9397 750 10666






2002 Nov 05 10
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