KSC2383 NPN Epitaxial Silicon Transistor

October 2014

KSC2383
NPN Epitaxial Silicon Transistor

1 TO-92L
1. Emitter 2. Collector 3. Base

Ordering Information
Part Number Top Mark Package Packing Method
KSC2383OTA C2383 O- TO-92 3L Ammo
KSC2383YTA C2383 Y- TO-92 3L Ammo

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted.

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 160 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 1 A
IB Base Current 0.5 A
TJ Junction Temperature 150 C
TSTG Storage Temperature -55 to +150 C

2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

KSC2383 Rev. 1.1.0
 KSC2383 NPN Epitaxial Silicon Transistor
Thermal Characteristics(1)
Values are at TA = 25C unless otherwise noted.

Symbol Parameter Value Unit

Power Dissipation 900 mW
PD
Derate Above 25C 7.2 mW/C
RJA Thermal Resistance, Junction-to-Ambient 138 C/W

Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics
Values are at TA = 25C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

ICBO Collector Cut-Off Current VCB = 150 V, IE = 0 1 A
IEBO Emitter Cut-Off Current VEB = 6 V, IC = 0 1 A
BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 160 V
hFE DC Current Gain VCE = 5 V, IC = 200 mA 60 320
VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 1.5 V
VBE(on) Base-Emitter On Voltage VCE = 5 V, IC = 5 mA 0.45 0.75 V
fT Current Gain Bandwidth Product VCE = 5 V, IC = 200 mA 20 100 MHz
VCB = 10 V, IE = 0,
Cob Output Capacitance 20 pF
f = 1 MHz

hFE Classification
Classification R O Y
hFE 60 ~ 120 100 ~ 200 160 ~ 320

2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

KSC2383 Rev. 1.1.0 2
 KSC2383 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics

1.4 1000
EMITTER COMMON EMITTER COMMON
o
1.2 Ta=25 C
Ic[mA], COLLECTOR CURRENT

IB = 15mA
VCE=10V
IB = 10mA

hFE, DC CURRENT GAIN

1.0
100
IB = 6mA VCE=5V
0.8
IB = 4mA

0.6 IB = 3mA
IB = 2.5mA
10
0.4 IB = 2mA
IB = 1.5mA
0.2 IB = 1mA
IB = 0.5mA
0.0 1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC Current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000 1
EMITTER COMMON EMITTER COMMON
o o
Ta = 25 C Ta = 25 C
hFE, DC CURRENT GAIN

0.1
VCE=10V IC/IB=10

100 IC/IB=5

VCE=5V
0.01

VCE=1V

10 1E-3
100 1000 1 10 100 1000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage

1.0 1000
EMITTER COMMON EMITTER COMMON
IC/IB=10 f = 1MHz
o
0.8 Ta = 25 C
IC[A], COLLECTOR CURRENT

Cob[pF], CAPACITANCE

100
0.6

0.4
10

0.2

0.0 1
0.0 0.2 0.4 0.6 0.8 1.0 1 10 100 1000

VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR BASE VOLTAGE

Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance

2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

KSC2383 Rev. 1.1.0 3
 KSC2383 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics (Continued)
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

1000 10
EMITTER COMMON
o
Ta = 25 C IC MAX. (Pulse)
10

IC[A], COLLECTOR CURRENT

0m

10

1m
1 s

s
s
100 IC
MA
X.
=1
A
0.1
DC
Ta
=2
5 o
10 C

VCEO MAX.
0.01

1 1E-3
1 10 100 1000 1 10 100 1000

IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area

2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

KSC2383 Rev. 1.1.0 4
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Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
No Identification Needed Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I72

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