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    Isc N-Channel MOSFET Transistor IRFS3607: Features

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    Barkat Hussain
    This document provides information on an Isc N-Channel MOSFET transistor model IRFS3607. It lists the transistor's key features such as its TO-263 package and low input capacitance. It also provides the transistor's applications, maximum ratings, thermal characteristics, and electrical characteristics including breakdown voltage, threshold voltage, on-resistance, leakage currents, and diode forward voltage.

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    Isc N-Channel MOSFET Transistor IRFS3607: Features

    Uploaded by

    Barkat Hussain
    72 views2 pages
    This document provides information on an Isc N-Channel MOSFET transistor model IRFS3607. It lists the transistor's key features such as its TO-263 package and low input capacitance. It also provides the transistor's applications, maximum ratings, thermal characteristics, and electrical characteristics including breakdown voltage, threshold voltage, on-resistance, leakage currents, and diode forward voltage.

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    This document provides information on an Isc N-Channel MOSFET transistor model IRFS3607. It lists the transistor's key features such as its TO-263 package and low input capacitance. It also provides the transistor's applications, maximum ratings, thermal characteristics, and electrical characteristics including breakdown voltage, threshold voltage, on-resistance, leakage currents, and diode forward voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    72 views2 pages

    Isc N-Channel MOSFET Transistor IRFS3607: Features

    Uploaded by

    Barkat Hussain
    This document provides information on an Isc N-Channel MOSFET transistor model IRFS3607. It lists the transistor's key features such as its TO-263 package and low input capacitance. It also provides the transistor's applications, maximum ratings, thermal characteristics, and electrical characteristics including breakdown voltage, threshold voltage, on-resistance, leakage currents, and diode forward voltage.

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    Isc N-Channel MOSFET Transistor IRFS3607

    ·FEATURES
    ·With To-263(D2PAK) package
    ·Low input capacitance and gate charge
    ·Low gate input resistance
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    ·APPLICATIONS
    ·Switching applications

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 75 V

    VGSS Gate-Source Voltage ±20 V

    Drain Current-ContinuousTc=25℃ 80
    ID A
    Tc=100℃ 56

    IDM Drain Current-Single Pulsed 350 A

    PD Total Dissipation @TC=25℃ 140 W

    Tch Max. Operating Junction Temperature 175 ℃

    Tstg Storage Temperature -55~175 ℃

    ·THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth(ch-c) Channel-to-case thermal resistance 1.05 ℃/W

    Rth(ch-a) Channel-to-ambient thermal resistance 40 ℃/W

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


    Isc N-Channel MOSFET Transistor IRFS3607

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 75 V

    VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.1mA 2.0 4.0 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID=46A 7.34 9.0 mΩ

    IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ±0.1 μA

    VDS=75V; VGS= 0V;Tj=25℃ 20


    IDSS Drain-Source Leakage Current μA
    VDS=60V; VGS= 0V;Tj=125℃ 250

    VSDF Diode forward voltage ISD=46A, VGS = 0 Vs 1.3 V

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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