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    2SB616 SavantIC

    Uploaded by

    MrGC1964
    This document provides product specifications for SavantIC Semiconductor's 2SB616 silicon PNP power transistor. The transistor features a TO-3PN package and is intended for power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -100V, collector current of -5A, and DC current gain of 50 typical at IC=-1A and VCE=-5V.

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    © All Rights Reserved
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    2SB616 SavantIC

    Uploaded by

    MrGC1964
    102 views3 pages
    This document provides product specifications for SavantIC Semiconductor's 2SB616 silicon PNP power transistor. The transistor features a TO-3PN package and is intended for power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -100V, collector current of -5A, and DC current gain of 50 typical at IC=-1A and VCE=-5V.

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    Transistor 2SB616

    Original Title

    2SB616-SavantIC

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    This document provides product specifications for SavantIC Semiconductor's 2SB616 silicon PNP power transistor. The transistor features a TO-3PN package and is intended for power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -100V, collector current of -5A, and DC current gain of 50 typical at IC=-1A and VCE=-5V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    102 views3 pages

    2SB616 SavantIC

    Uploaded by

    MrGC1964
    This document provides product specifications for SavantIC Semiconductor's 2SB616 silicon PNP power transistor. The transistor features a TO-3PN package and is intended for power amplifier applications. Key specifications include an absolute maximum collector-emitter voltage of -100V, collector current of -5A, and DC current gain of 50 typical at IC=-1A and VCE=-5V.

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    © All Rights Reserved
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    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors


    www.DataSheet4U.com
    2SB616

    DESCRIPTION
    With TO-3PN package
    Complement to type 2SD586

    APPLICATIONS
    For power amplifier applications

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PN) and symbol
    3 Emitter

    Absolute maximum ratings(Tc=25 )

    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -100 V

    VCEO Collector-emitter voltage Open base -100 V

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -5 A

    PC Collector power dissipation TC=25 60 W

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors


    www.DataSheet4U.com
    2SB616

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -100 V

    V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -100 V

    V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V

    VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V

    VBE Base-emitter on voltage IC=-1A;VCE=-5V -1.5 V

    ICBO Collector cut-off current VCB=-100V; IE=0 -0.1 mA

    IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA

    hFE-1 DC current gain IC=-1A ; VCE=-5V 50

    fT Transition frequency IC=-1A ; VCE=-5V 11 MHz

    COB Collector output capacitance IE=0;f=1MHz;VCB=-10V 140 pF

    2
    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors


    www.DataSheet4U.com
    2SB616

    PACKAGE OUTLINE

    Fig.2 outline dimensions

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