Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1095

DESCRIPTION
·With MT-200 package
·Complement to type 2SC2565
·High breakdown voltage
·High transition frequency

APPLICATIONS
·Power amplifier applications
·Recommended for 100W high-fidelity audio
frequency amplifer output stage

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (MT-200) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -160 V

VCEO Collector-emitter voltage Open base -160 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -15 A

IE Emitter current 15 A

PC Collectorl power dissipation TC=25 150 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1095

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-100mA; IB=0 -160 V

V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V

VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A -2.0 V

VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V

ICBO Collector cut-off current VCB=-160V; IE=0 -50 µA

IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA

hFE-1 DC current gain IC=-1A ; VCE=-5V 55 240

hFE-2 DC current gain IC=-5A ; VCE=-5V 40

fT Transition frequency IC=-1A ; VCE=-10V 60 MHz

COB Output capacitance IE=0; VCB=-10V;f=1MHz 350 pF

hFE classifications

R O Y

55-110 80-160 120-240

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1095

PACKAGE OUTLINE

Fig.2 Outline dimensions

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